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    • 8. 发明授权
    • Programming method of non-volatile memory device
    • 非易失性存储器件的编程方法
    • US08711630B2
    • 2014-04-29
    • US13334423
    • 2011-12-22
    • Seiichi AritomeHyun-Seung YooSung-Jin Whang
    • Seiichi AritomeHyun-Seung YooSung-Jin Whang
    • G11C16/04
    • G11C16/3427G11C16/0483H01L27/11556
    • A programming method of a non-volatile memory device that includes a string of memory cells with a plurality of floating gates and a plurality of control gates disposed alternately, wherein each of the memory cells includes one floating gate and two control gates disposed adjacent to the floating gate and two neighboring memory cells share one control gate. The programming method includes applying a first program voltage to a first control gate of a selected memory cell and a second program voltage that is higher than the first program voltage to a second control gate of the selected memory cell, and applying a first pass voltage to a third control gate disposed adjacent to the first control gate and a second pass voltage that is lower than the first pass voltage to a fourth control gate disposed adjacent to the second control gate.
    • 一种非易失性存储器件的编程方法,包括具有多个浮动栅极和多个控制栅极交替布置的存储器单元串,其中每个存储器单元包括一个浮置栅极和两个控制栅极, 浮动门和两个相邻的存储单元共享一个控制门。 编程方法包括将第一编程电压施加到所选择的存储单元的第一控制栅极,以及将高于第一编程电压的第二编程电压施加到所选存储单元的第二控制栅极,并将第一通过电压施加到 与第一控制栅极相邻设置的第三控制栅极和与第二控制栅极相邻设置的第四控制栅极低于第一通过电压的第二通过电压。