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    • 2. 发明授权
    • Preparation method of polyamide thin film composite reverse osmosis membrane and polyamide thin film composite reverse osmosis membrane prepared therefrom
    • 聚酰胺薄膜复合反渗透膜及其制备的聚酰胺薄膜复合反渗透膜的制备方法
    • US07598296B2
    • 2009-10-06
    • US10586520
    • 2005-12-26
    • Je-Kang YooSun-Yong LeeYoun-Kook Kim
    • Je-Kang YooSun-Yong LeeYoun-Kook Kim
    • C08J5/20
    • B01D69/125B01D61/025B01D67/0093B01D67/0095B01D71/56Y02A20/131
    • A preparation method of a polyamide thin film composite reverse osmosis membrane and a polyamide thin film composite reverse osmosis membrane prepared using the preparation method are provided. The preparation method of a polyamide thin film composite reverse osmosis membrane using interfacial polymerization of an amine aqueous solution and amine-reactive compound includes the steps of (a) forming an active layer through interfacial polymerization by contacting a surface of a porous support with an amine aqueous solution containing a polyfunctional aromatic amine monomer and an organic solution containing polyfunctional acyl halide monomer as an amine-reactive compound, and (b) performing post-treatment preceded by the forming of the active layer by contacting the active layer with an aqueous solution containing 0.1 to 100 wt % of polyfunctional tertiary alcohol amine. The polyamide thin film composite reverse osmosis membrane prepared by using the polyfunctional tertiary alcohol amine as a post-treatment compound has improved water permeability and salt rejection compared to a case of using various post-treatment agents or methods.
    • 提供了使用该制备方法制备的聚酰胺薄膜复合反渗透膜和聚酰胺薄膜复合反渗透膜的制备方法。 使用胺水溶液和胺反应性化合物的界面聚合的聚酰胺薄膜复合反渗透膜的制备方法包括以下步骤:(a)通过界面聚合形成活性层,通过使多孔载体的表面与胺 含有多官能芳族胺单体的水溶液和含有多官能酰卤单体作为胺反应性化合物的有机溶液,和(b)在活性层形成之前进行后处理,所述活性层通过使活性层与含有 0.1〜100重量%的多官能叔胺胺。 通过使用多官能叔醇胺作为后处理化合物制备的聚酰胺薄膜复合反渗透膜与使用各种后处理剂或方法的情况相比,具有改善的透水性和耐盐析性。
    • 3. 发明授权
    • Shift register
    • 移位寄存器
    • US07382348B2
    • 2008-06-03
    • US11022849
    • 2004-12-28
    • Young Sik KimSu Hwan MoonSun Yong LeeKwang Sik Hwang
    • Young Sik KimSu Hwan MoonSun Yong LeeKwang Sik Hwang
    • G09G3/36
    • G09G3/3677G11C19/184G11C19/28
    • A shift register having an amorphous silicon thin film transistor for decreasing a distortion of the output signal is disclosed. In the shift register having a plurality of stages for shifting an input signal using first and second driving voltages, first and second clock signals and a start pulse, each of said plurality of stages includes an output buffer for selectively applying any one of the first and second clock signals and the second driving voltage to an output line under control of first and second nodes; a pre-charger for pre-charging the first driving voltage into the first node in response to said start pulse; a second node controller for selectively supplying the first and second driving voltages to the second node in such a manner to be opposite to the first node using said start pulse and an output signal of the next stage; and a first node controller for supplying the second driving voltage to the first node in a time interval excluding the time interval for said pre-charging.
    • 公开了一种具有用于减小输出信号失真的非晶硅薄膜晶体管的移位寄存器。 在具有用于使用第一和第二驱动电压移位输入信号的多个级的移位寄存器中,第一和第二时钟信号以及起始脉冲,所述多个级中的每一个包括输出缓冲器,用于选择性地施加第一和第二驱动电压 第二时钟信号和第二驱动电压到第一和第二节点的控制下的输出线; 预充电器,用于响应于所述起始脉冲将第一驱动电压预充电到第一节点; 第二节点控制器,用于使用所述起始脉冲和下一级的输出信号以与第一节点相反的方式选择性地将第一和第二驱动电压提供给第二节点; 以及第一节点控制器,用于在除了所述预充电的时间间隔之外的时间间隔内向第一节点提供第二驱动电压。
    • 6. 发明申请
    • Preparation Method of Polyamide Thin Film Composite Reverse Osmosis Membrane and Polyamide Thin Film Composite Reverse Osmosis Membrane Prepared Therefrom
    • 聚酰胺薄膜复合反渗透膜和聚酰胺薄膜复合反渗透膜的制备方法
    • US20080234462A1
    • 2008-09-25
    • US10586520
    • 2005-12-26
    • Je-Kang YooSun-Yong LeeYoun-Kook Kim
    • Je-Kang YooSun-Yong LeeYoun-Kook Kim
    • C08G73/00B05D3/10
    • B01D69/125B01D61/025B01D67/0093B01D67/0095B01D71/56Y02A20/131
    • A preparation method of a polyamide thin film composite reverse osmosis membrane and a polyamide thin film composite reverse osmosis membrane prepared using the preparation method are provided. The preparation method of a polyamide thin film composite reverse osmosis membrane using interfacial polymerization of an amine aqueous solution and amine-reactive compound includes the steps of (a) forming an active layer through interfacial polymerization by contacting a surface of a porous support with an amine aqueous solution containing a polyfunctional aromatic amine monomer and an organic solution containing polyfunctional acyl halide monomer as an amine-reactive compound, and (b) performing post-treatment preceded by the forming of the active layer by contacting the active layer with an aqueous solution containing 0.1 to 100 wt % of polyfunctional tertiary alcohol amine. The polyamide thin film composite reverse osmosis membrane prepared by using the polyfunctional tertiary alcohol amine as a post-treatment compound has improved water permeability and salt rejection compared to a case of using various post-treatment agents or methods.
    • 提供了使用该制备方法制备的聚酰胺薄膜复合反渗透膜和聚酰胺薄膜复合反渗透膜的制备方法。 使用胺水溶液和胺反应性化合物的界面聚合的聚酰胺薄膜复合反渗透膜的制备方法包括以下步骤:(a)通过界面聚合形成活性层,通过使多孔载体的表面与胺 含有多官能芳族胺单体的水溶液和含有多官能酰卤单体作为胺反应性化合物的有机溶液,和(b)在活性层形成之前进行后处理,所述活性层通过使活性层与含有 0.1〜100重量%的多官能叔胺胺。 通过使用多官能叔醇胺作为后处理化合物制备的聚酰胺薄膜复合反渗透膜与使用各种后处理剂或方法的情况相比,具有改善的透水性和耐盐析性。
    • 7. 发明申请
    • Thin film transistor substrate for liquid crystal display
    • 用于液晶显示的薄膜晶体管基板
    • US20080002083A1
    • 2008-01-03
    • US11643974
    • 2006-12-22
    • Jae Chang KwonSun Yong LeeSe Eung Lee
    • Jae Chang KwonSun Yong LeeSe Eung Lee
    • G02F1/136
    • G02F1/134363G02F2201/40G02F2201/52
    • A thin film transistor (TFT) substrate for a liquid crystal display is provided. The thin film transistor substrate includes: a plurality of gate lines and a plurality of data lines that cross each other and define a plurality of sub-pixels; and a plurality of unit pixels in which first and second unit pixels are alternately formed in a direction of the gate lines and first and second unit pixels are formed vertically in a direction of the data lines, wherein the first unit pixel includes three sub-pixels and the first electrodes are slanted with respect to the gate lines and the data lines in each sub-pixel, the second unit pixel includes three sub-pixels and the second electrodes are a slanted with respect to the gate lines and the data lines in each sub-pixel, and the slant of the second electrodes is symmetrical to the slant of the first electrodes.
    • 提供了一种用于液晶显示器的薄膜晶体管(TFT)基板。 薄膜晶体管基板包括:多条栅极线和多条数据线,它们彼此交叉并限定多个子像素; 以及多个单位像素,其中第一和第二单位像素沿着所述栅极线的方向交替地形成,并且所述第一和第二单位像素在所述数据线的方向上垂直地形成,其中所述第一单位像素包括三个子像素 并且第一电极相对于每个子像素中的栅极线和数据线倾斜,第二单位像素包括三个子像素,并且第二电极相对于每条栅极线和数据线倾斜 子像素,并且第二电极的倾斜与第一电极的倾斜对称。
    • 10. 发明申请
    • Megasonic cleaner having double cleaning probe and cleaning method
    • 超声波清洗机具有双重清洁探头和清洁方法
    • US20060130871A1
    • 2006-06-22
    • US11268285
    • 2005-11-04
    • Kyung-Seuk HwangSun-Yong LeeDong-Chul Heo
    • Kyung-Seuk HwangSun-Yong LeeDong-Chul Heo
    • B08B3/12C23G1/00B08B7/00B08B3/00
    • H01L21/67051B08B3/12
    • A megasonic cleaner includes a rotatable wafer supporting member for supporting a wafer; a cleaning solution supply member for supplying a cleaning solution to a wafer placed on the wafer supporting member; at least two vibration transfer members for agitating cleaning solutions supplied to different areas of the wafer placed on the wafer supporting member; and a vibration generating member for oscillating the at least two vibration transfer members. The cleaner has at least two quartz rods for transferring oscillation energy. Using the quartz rods, oscillation energy is transferred to respective areas of a wafer to clean the wafer. Thus, a difference between cleaning efficiencies of wafer edge and center is reduced or substantially eliminated to achieve a uniform cleaning efficiency on an entire surface of the wafer.
    • 兆声波清洗器包括用于支撑晶片的可旋转晶片支撑构件; 清洁溶液供给构件,用于将清洁溶液供给到放置在晶片支撑构件上的晶片; 至少两个振动传递构件,用于搅拌提供给放置在晶片支撑构件上的晶片的不同区域的清洁溶液; 以及用于振荡所述至少两个振动传递构件的振动产生构件。 清洁器至少有两个用于传递振荡能量的石英棒。 使用石英棒,将振荡能量转移到晶片的相应区域以清洁晶片。 因此,晶片边缘和中心的清洁效率之间的差异被减小或基本消除,以在晶片的整个表面上实现均匀的清洁效率。