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1. 发明申请

US20060130871A1 Megasonic cleaner having double cleaning probe and cleaning method 审中-公开
标题翻译：超声波清洗机具有双重清洁探头和清洁方法
公开(公告)号：US20060130871A1
公开(公告)日：2006-06-22
申请号：US11268285
申请日：2005-11-04
申请人： Kyung-Seuk Hwang , Sun-Yong Lee , Dong-Chul Heo
发明人： Kyung-Seuk Hwang , Sun-Yong Lee , Dong-Chul Heo
IPC分类号： B08B3/12 , C23G1/00 , B08B7/00 , B08B3/00
CPC分类号： H01L21/67051 , B08B3/12
摘要： A megasonic cleaner includes a rotatable wafer supporting member for supporting a wafer; a cleaning solution supply member for supplying a cleaning solution to a wafer placed on the wafer supporting member; at least two vibration transfer members for agitating cleaning solutions supplied to different areas of the wafer placed on the wafer supporting member; and a vibration generating member for oscillating the at least two vibration transfer members. The cleaner has at least two quartz rods for transferring oscillation energy. Using the quartz rods, oscillation energy is transferred to respective areas of a wafer to clean the wafer. Thus, a difference between cleaning efficiencies of wafer edge and center is reduced or substantially eliminated to achieve a uniform cleaning efficiency on an entire surface of the wafer.
摘要翻译：兆声波清洗器包括用于支撑晶片的可旋转晶片支撑构件; 清洁溶液供给构件，用于将清洁溶液供给到放置在晶片支撑构件上的晶片; 至少两个振动传递构件，用于搅拌提供给放置在晶片支撑构件上的晶片的不同区域的清洁溶液; 以及用于振荡所述至少两个振动传递构件的振动产生构件。清洁器至少有两个用于传递振荡能量的石英棒。使用石英棒，将振荡能量转移到晶片的相应区域以清洁晶片。因此，晶片边缘和中心的清洁效率之间的差异被减小或基本消除，以在晶片的整个表面上实现均匀的清洁效率。

2. 发明申请

US20060096622A1 Dry cleaning apparatus used to manufacture semiconductor devices 审中-公开
标题翻译：用于制造半导体器件的干洗设备
公开(公告)号：US20060096622A1
公开(公告)日：2006-05-11
申请号：US11272414
申请日：2005-11-10
申请人： Sang-Eon Lee , Sun-Yong Lee , Sang-Rok Hah , Dong-Chul Heo
发明人： Sang-Eon Lee , Sun-Yong Lee , Sang-Rok Hah , Dong-Chul Heo
IPC分类号： B08B3/00
CPC分类号： B08B5/02 , B08B7/0042 , B08B15/02 , H01L21/67017 , H01L21/67028
摘要： A dry cleaning apparatus for cleaning a surface of a semiconductor substrate comprises a chamber comprising a first wall and a second wall, a supporting member including a wafer receiving surface, a cleaning member for removing particles from the surface of the substrate placed on the supporting member, and a carrier gas supplying member for supplying a carrier gas and for transporting the particles separated from the surface of the substrate to the outside of the chamber, wherein the first wall of the chamber including a first portion disposed to face the wafer receiving surface and a second portion formed adjacent to the first portion and disposed to receive a part of the carrier gas supplying member.
摘要翻译：一种用于清洁半导体衬底的表面的干洗设备，包括：一个包括一个第一壁和一个第二壁的腔室，一个包括一个晶片接收表面的支撑构件，一个用于从放置在支撑构件上的衬底表面去除颗粒的清洁构件以及用于供给载气并将从基板的表面分离的颗粒输送到室的外部的载气供给部件，其中，所述室的第一壁包括设置成面对晶片接收表面的第一部分和第二部分，其形成在与第一部分相邻并且设置成容纳载气供应部件的一部分。

3. 发明申请

US20060154484A1 Method of removing a low-k layer and method of recycling a wafer using the same 审中-公开
标题翻译：去除低k层的方法和使用该层的回收晶片的方法
公开(公告)号：US20060154484A1
公开(公告)日：2006-07-13
申请号：US11330803
申请日：2006-01-11
申请人： Dong-Won Hwang , Yang-Koo Lee , Dong-Chul Heo , Pil-Kwon Jun , Kwang-Shin Lim , Sang-Eon Lee
发明人： Dong-Won Hwang , Yang-Koo Lee , Dong-Chul Heo , Pil-Kwon Jun , Kwang-Shin Lim , Sang-Eon Lee
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31133 , H01L21/31053
摘要： In one embodiment, a method of removing a low-k layer at a low cost and a method of recycling a wafer using the same, is described. A fluoride treatment is performed on the low-k layer formed on an object using an aqueous hydrogen fluoride solution, and the low-k layer is removed from the object. The Si—O bond in the low-k layer is broken due to an aqueous hydrogen fluoride solution, so that the low-k layer is easily removed from the wafer. Accordingly, the wafer may be recycled at a low cost, thereby improving manufacturing productivity of a semiconductor.
摘要翻译：在一个实施例中，描述了以低成本去除低k层的方法以及使用其降低晶片的方法。使用氟化氢水溶液对形成在物体上的低k层进行氟化处理，从物体除去低k层。低k层中的Si-O键由于氟化氢水溶液而破裂，使得低k层容易从晶片上去除。因此，可以以低成本回收晶片，从而提高半导体的制造生产率。

4. 发明授权

US07678751B2 Composition for removing photoresist, method of removing photoresist and method of manufacturing a semiconductor device using the same 有权
标题翻译：用于除去光致抗蚀剂的组合物，去除光致抗蚀剂的方法及使用其制造半导体器件的方法
公开(公告)号：US07678751B2
公开(公告)日：2010-03-16
申请号：US11296000
申请日：2005-12-06
申请人： Jung-Dae Park , Sang-Eon Lee , Sang-Mun Chon , Yang-Koo Lee , Dong-Chul Heo , Pil-Kwon Jun
发明人： Jung-Dae Park , Sang-Eon Lee , Sang-Mun Chon , Yang-Koo Lee , Dong-Chul Heo , Pil-Kwon Jun
IPC分类号： C11D7/50
CPC分类号： C11D7/264 , C11D7/5009 , C11D7/5013 , C11D7/5022 , C11D11/0047
摘要： Disclosed are a composition for removing photoresist, a method of removing photoresist and a method of manufacturing a semiconductor device using a composition. The composition may include a ketone compound and a first polar aprotic solvent. The composition may also include the ketone compound and a second polar aprotic solvent. Moreover, the composition may include the first polar aprotic solvent and a second polar aprotic solvent with or without the ketone compound. The first polar aprotic solvent has at least one of an ether compound and an ester compound, and the second polar aprotic solvent has at least one of a sulfur-containing compound and a nitrogen-containing compound.
摘要翻译：公开了除去光致抗蚀剂的组合物，去除光刻胶的方法以及使用组合物制造半导体器件的方法。组合物可以包括酮化合物和第一极性非质子溶剂。组合物还可以包括酮化合物和第二极性非质子溶剂。此外，组合物可以包括第一极性非质子溶剂和具有或不具有酮化合物的第二极性非质子溶剂。第一极性非质子溶剂具有醚化合物和酯化合物中的至少一种，第二极性非质子溶剂具有含硫化合物和含氮化合物中的至少一种。

5. 发明申请

US20070051393A1 Apparatus for cleaning a wafer 审中-公开
标题翻译：清洁晶片的装置
公开(公告)号：US20070051393A1
公开(公告)日：2007-03-08
申请号：US11516101
申请日：2006-09-06
申请人： Mo-Hyun Cho , Dong-Chul Heo , Duk-Lyol Lee , Tae-Hwan Kim , Tae-Wan Kim
发明人： Mo-Hyun Cho , Dong-Chul Heo , Duk-Lyol Lee , Tae-Hwan Kim , Tae-Wan Kim
IPC分类号： B08B3/00 , B08B3/04
CPC分类号： B08B3/04 , H01L21/67051
摘要： An apparatus for cleaning a wafer includes a rotary chuck for supporting and rotating a wafer, a cleaning solution supply unit for supplying a cleaning solution onto the wafer, a bowl spaced apart from and surrounding the rotary chuck, and a protrusion portion protruded from the rotary chuck and having a slope face with respect to the rotary chuck. The protrusion portion can prevent an ascending air stream from being generated by a vortex when the rotary chuck rotates. A guide member can be positioned between the bowl and the rotary chuck to guide the cleaning solution downwardly to a bottom portion of the bowl. A protector can extend from an inner side surface of the guide member toward the rotary chuck, to prevent an ascending air stream caused by the vortex.
摘要翻译：一种用于清洗晶片的设备包括用于支撑和旋转晶片的旋转卡盘，用于将清洁溶液供应到晶片上的清洁溶液供应单元，与旋转卡盘间隔开并围绕旋转卡盘的碗，以及从旋转盘并且相对于旋转卡盘具有倾斜面。当旋转卡盘旋转时，突出部分可以防止上升的气流由涡流产生。引导构件可以定位在碗和旋转卡盘之间，以将清洁溶液向下引导到碗的底部。保护器可以从引导构件的内侧表面朝向旋转卡盘延伸，以防止由涡流引起的上升气流。

6. 发明申请

US20060122084A1 Composition for removing photoresist, method of removing photoresist and method of manufacturing a semiconductor device using the same 有权
标题翻译：用于除去光致抗蚀剂的组合物，去除光致抗蚀剂的方法及使用其制造半导体器件的方法
公开(公告)号：US20060122084A1
公开(公告)日：2006-06-08
申请号：US11296000
申请日：2005-12-06
申请人： Jung-Dae Park , Sang-Eon Lee , Sang-Mun Chon , Yang-Koo Lee , Dong-Chul Heo , Pil-Kwon Jun
发明人： Jung-Dae Park , Sang-Eon Lee , Sang-Mun Chon , Yang-Koo Lee , Dong-Chul Heo , Pil-Kwon Jun
IPC分类号： C11D7/32
CPC分类号： C11D7/264 , C11D7/5009 , C11D7/5013 , C11D7/5022 , C11D11/0047
摘要： Disclosed are a composition for removing photoresist, a method of removing photoresist and a method of manufacturing a semiconductor device using a composition. The composition may include a ketone compound and a first polar aprotic solvent. The composition may also include the ketone compound and a second polar aprotic solvent. Moreover, the composition may include the first polar aprotic solvent and a second polar aprotic solvent with or without the ketone compound. The first polar aprotic solvent has at least one of an ether compound and an ester compound, and the second polar aprotic solvent has at least one of a sulfur-containing compound and a nitrogen-containing compound.
摘要翻译：公开了除去光致抗蚀剂的组合物，去除光刻胶的方法以及使用组合物制造半导体器件的方法。组合物可以包括酮化合物和第一极性非质子溶剂。组合物还可以包括酮化合物和第二极性非质子溶剂。此外，组合物可以包括第一极性非质子溶剂和具有或不具有酮化合物的第二极性非质子溶剂。第一极性非质子溶剂具有醚化合物和酯化合物中的至少一种，第二极性非质子溶剂具有含硫化合物和含氮化合物中的至少一种。

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