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1. 发明申请

WO2005088655A1 A MAGNETORESISTIVE MEDIUM 审中-公开
标题翻译：磁性介质
公开(公告)号：WO2005088655A1
公开(公告)日：2005-09-22
申请号：PCT/IE2004/000034
申请日：2004-03-12
申请人： THE PROVOST FELLOWS AND SCHOLARS OF THE COLLEGE OF THE HOLY AND UNDIVIDED TRINITY OF QUEEN ELIZABETH NEAR DUBLIN , SHVETS, Igor , ARORA, Sunil, Kumar , PILLAI, Sumesh, Sofin, Ramakrishna, Pillai, Gopala
发明人： SHVETS, Igor , ARORA, Sunil, Kumar , PILLAI, Sumesh, Sofin, Ramakrishna, Pillai, Gopala
IPC分类号： H01F1/00
CPC分类号： H01F41/30 , B82Y25/00 , B82Y40/00 , H01F1/0072 , H01F10/007 , H01F10/32 , Y10T428/1234 , Y10T428/31
摘要： A magnetoresistive medium (1) comprises a substrate (2) which has been treated to provide a miscut vicinal surface (3) in the form of terraces (4) and steps (5) of atomic scale. There are discrete separated spacer nanowires (7) provided by an intermediate partial film on each terrace (4) against each step (5). A further film (11) provides upper nanowires (10(a), 10(b)). A thin protective layer (15) covers the upper nanowires (10(a), 10(b)) which form two separate subsets of nanowires with different exchange interaction with the substrate and thus a different response to an external magnetic field. In use, an external magnetic field (H) applied the response of the nanowires (10(a), 10(b)) changes as the exchange coupling with the substrate varies and the magnetisation on the areas change, for example, as shown by the arrows while prior to the application of the external magnetic field, they might, for example, be aligned. Many different constructions of magnetoresistive media are described.
摘要翻译：磁阻介质（1）包括已经被处理以提供呈梯度（4）和原子尺度的步骤（5）形式的捣实邻位表面（3）的基底（2）。在每个台阶（4）上针对每个步骤（5）由中间部分膜提供离散的间隔物纳米线（7）。另外的膜（11）提供上部纳米线（10（a），10（b））。薄的保护层（15）覆盖上部纳米线（10（a），10（b）），其形成具有与衬底的不同交换相互作用的两个分开的纳米线子集，并因此形成对外部磁场的不同响应。在使用中，当与衬底的交换耦合变化并且区域上的磁化改变时，外部磁场（H）施加纳米线（10（a），10（b））变化的响应，例如，如在施加外部磁场之前的箭头，它们可以例如对准。描述了许多不同结构的磁阻介质。

2. 发明申请

US20060202292A1 Magnetoresistive medium including a vicinally treated substrate 审中-公开
标题翻译：包括连续处理的基底的磁阻介质
公开(公告)号：US20060202292A1
公开(公告)日：2006-09-14
申请号：US11078416
申请日：2005-03-14
申请人： Igor Shvets , Sunil Arora , Sumesh Sofin Ramakrishna Pillai
发明人： Igor Shvets , Sunil Arora , Sumesh Sofin Ramakrishna Pillai
IPC分类号： H01L21/00
CPC分类号： H01F41/30 , B82Y25/00 , B82Y40/00 , H01F1/0072 , H01F10/007 , H01F10/32 , Y10T428/1234 , Y10T428/31
摘要： A magnetoresistive medium (1) comprises a substrate (2) which has been treated to provide a miscut vicinal surface (3) in the form of terraces (4(a), 4(b)) and steps (5) of atomic and nanometer scale. A further upper film (11) provides upper nanowires (10(a), 10(b)). A thin protective layer (15) covers the upper nanowires (10(a), 10(b)) which form two separate subsets of upper nanowires with different exchange interaction with the substrate and thus a different response to an external magnetic field. The substrate (2) is so chosen that the width of the terraces 4(a) and 4(b) are significantly non-uniform. This leads to a different response depending on which terrace (4(a) or 4(b)) the upper film 11 overlies. It can utilise, for example, step-induced magnetic anisotropy between the upper nanowires (10(a), 10(b)) and the substrate (2). In use, when an external magnetic field (H) is applied the response of the main nanowires (10(a), 10(b)) changes as the exchange coupling with the substrate (2) varies and the magnetisation on the main nanowires (10(a), 10(b)) change. This is shown by the arrows while prior to the application of the external magnetic field, they might, for example, be aligned. Many different constructions of magnetoresistive media are described.
摘要翻译：磁阻介质（1）包括已经被处理以提供梯形（4（a），4（b））形式的捣实邻位表面（3）和原子和纳米级的步骤（5）的基底（2）规模。另一上层膜（11）提供上层纳米线（10（a），10（b））。薄的保护层（15）覆盖上部纳米线（10（a），10（b）），其形成具有与衬底的不同交换相互作用的上部纳米线的两个分离的子集，因此对外部磁场具有不同的响应。衬底（2）被选择为使得梯田4（a）和4（b）的宽度显着不均匀。这导致不同的响应取决于上部膜11覆盖在哪个平台（4（a）或4（b））上。它可以利用例如上部纳米线（10（a），10（b））和基板（2）之间的阶跃感应磁各向异性。在使用中，当施加外部磁场（H）时，主纳米线（10（a），10（b））的响应随着与衬底（2）的交换耦合而变化并且主纳米线上的磁化（ 10（a），10（b））改变。这在施加外部磁场之前由箭头示出，但是它们可以例如对准。描述了许多不同结构的磁阻介质。

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