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1. 发明申请

US20070066007A1 Method to obtain fully silicided gate electrodes 有权
标题翻译：获得完全硅化栅电极的方法
公开(公告)号：US20070066007A1
公开(公告)日：2007-03-22
申请号：US11228902
申请日：2005-09-16
申请人： Steven Vitale , Hyesook Hong , Freidoon Mehrad
发明人： Steven Vitale , Hyesook Hong , Freidoon Mehrad
IPC分类号： H01L21/8238
CPC分类号： H01L21/823425 , H01L21/823443 , H01L21/823835
摘要： The present invention provides a method of fabricating a microelectronics device. In one aspect, the method comprises depositing a protective layer (510) over a spacer material (415) located over gate electrodes (250) and a doped region (255) located between the gate electrodes (250), removing a portion of the spacer material (415) and the protective layer (510) located over the gate electrodes (250). A remaining portion of the spacer material (415) remains over the top surface of the gate electrodes (250) and over the doped region (255), and a portion of the protective layer (510) remains over the doped region (255). The method further comprises removing the remaining portion of the spacer material (415) to form spacer sidewalls on the gate electrodes (250), expose the top surface of the gate electrodes (250), and leave a remnant of the spacer material (415) over the doped region (255). Source/drains are formed adjacent the gate electrodes 250 and through the remnant of the spacer material (415), and a metal is incorporated into the gate electrodes (250).
摘要翻译：本发明提供一种制造微电子器件的方法。在一个方面，该方法包括在位于栅电极（250）之间的间隔材料（415）和位于栅电极（250）之间的掺杂区域（255）之间沉积保护层（510），去除间隔物的一部分材料（415）和位于栅电极（250）上方的保护层（510）。间隔材料（415）的剩余部分保留在栅电极（250）的顶表面上方并且在掺杂区域（255）之上，并且保护层（510）的一部分保留在掺杂区域（255）上方。该方法还包括去除间隔物材料（415）的剩余部分以在栅电极（250）上形成间隔壁侧壁，露出栅电极（250）的顶表面，并留下间隔物材料（415）的残留物在掺杂区域（255）上。源极/漏极形成在栅电极250附近并且通过间隔物材料（415）的残留物，并且金属被结合到栅电极（250）中。

2. 发明授权

US4362035A Lockable closure 失效
标题翻译：可锁闭
公开(公告)号：US4362035A
公开(公告)日：1982-12-07
申请号：US180801
申请日：1980-08-25
申请人： Steven Vitale
发明人： Steven Vitale
IPC分类号： E05B13/10 , E05B67/36 , F16B41/00 , B65D39/08 , B65D55/14 , E05B63/00 , F16L35/00
CPC分类号： E05B67/365 , E05B13/101 , F16B41/005 , Y10T70/5571 , Y10T70/5823 , Y10T70/5863 , Y10T70/7915
摘要： A shield is rotatably mounted to a threaded element of the closure on an axis coincident with the axis of the threaded element, so that the shield impedes access to the threaded element. The shield can be removed from the threaded element or connected to the threaded element only upon actuation of the closure by an appropriate key. Absent such actuation, the threaded element cannot be rotated for disengagement from the conduit by rotating the shield. The closure is protected against attempts to disengage it from the conduit by bonding the shield to the threaded element with an adhesive and rotating the shield.
摘要翻译：屏蔽件可旋转地安装在与螺纹元件的轴线重合的轴线处的封闭件的螺纹元件上，使得屏蔽件阻止对螺纹元件的接近。只有在通过适当的钥匙致动闭合件时，护罩才能从螺纹元件移除或连接到螺纹元件。没有这样的致动，螺纹元件不能旋转以通过旋转屏蔽而脱离导管。通过用粘合剂将屏蔽件与螺纹元件结合并旋转屏蔽件，可以防止封盖件从导管脱离的尝试。

3. 发明申请

US20070099424A1 Reduction of mechanical stress on pattern specific geometries during etch using double pattern layout and process approach 审中-公开
标题翻译：使用双图案布局和工艺方法在刻蚀期间减小图案特定几何图形上的机械应力
公开(公告)号：US20070099424A1
公开(公告)日：2007-05-03
申请号：US11260239
申请日：2005-10-28
申请人： Benjamen Rathsack , James Blatchford , Steven Vitale
发明人： Benjamen Rathsack , James Blatchford , Steven Vitale
IPC分类号： C23F1/00 , H01L21/302
CPC分类号： H01L21/32139
摘要： According to various embodiments, methods to eliminate high stress areas in a mask during a gate trim etch are provided. High stress areas can include, for example, gate regions that are anchored at only one end. The exemplary methods can include the use of a double pattern layout, for example, separating printing and etching of a pattern specific geometry in the mask into two or more portions.
摘要翻译：根据各种实施例，提供了在栅极微调蚀刻期间消除掩模中的高应力区域的方法。高应力区域可以包括例如锚固在仅一端的浇口区域。示例性方法可以包括使用双重图案布局，例如，将掩模中的图案特定几何形状的印刷和蚀刻分离成两个或更多个部分。

4. 发明申请

US20070212864A1 Manufacturing a semiconductive device using a controlled atomic layer removal process 有权
标题翻译：使用受控原子层去除工艺制造半导体器件
公开(公告)号：US20070212864A1
公开(公告)日：2007-09-13
申请号：US11373662
申请日：2006-03-10
申请人： Steven Vitale
发明人： Steven Vitale
IPC分类号： H01L21/3205
CPC分类号： H01L21/32139 , H01L21/0338 , H01L21/28035 , H01L21/32135 , H01L21/32137 , H01L29/78
摘要： A method for manufacturing a semiconductive device comprising forming a mask for a semiconductive device structure over a layer of a semiconductor substrate and partially etching the layer to form lateral and vertical surfaces. Thicknesses of one to several atomic diameters of atoms that comprise said layer are removed from the lateral surfaces and the vertical surfaces that are located under the mask to form a target dimension of a semiconductive device structure.
摘要翻译：一种用于制造半导体器件的方法，包括在半导体衬底的层上形成用于半导体器件结构的掩模，并部分蚀刻所述层以形成横向和垂直表面。从位于掩模下方的侧表面和垂直表面去除包含所述层的一至几个原子直径的原子的厚度，以形成半导体器件结构的目标尺寸。

5. 发明授权

US06923197B2 Pressure regulator with tamper-proof safety feature 失效
标题翻译：压力调节器具有防篡改安全功能
公开(公告)号：US06923197B2
公开(公告)日：2005-08-02
申请号：US10353970
申请日：2003-01-30
申请人： Steven Vitale
发明人： Steven Vitale
IPC分类号： F16K31/122 , F16K31/126 , G05D16/02
CPC分类号： F16K31/122 , F16K31/126 , G05D16/0663 , Y10T137/0379 , Y10T137/0396 , Y10T137/7795 , Y10T137/7798 , Y10T137/7801 , Y10T137/7826
摘要： A pressure regulating system having a tamper-proof safety feature. A pair of seats are mounted to an annular pipe. A first bleed pipe, with a fixed restriction, extends from an inlet conduit to a first chamber. The first chamber is separated from a second chamber by a second diaphragm. A second bleed pipe extends from the second chamber to an outlet pipe. A bleed off mechanism is sealed within the outlet conduit and includes a compressible bellows. When compressed, which occurs when a predetermined pressure level is attained in the outlet conduit, a third seat is moved out of sealing relation with the outlet conduit and the first chamber. This creates an imbalance of the pressures in the chambers that leads to the pair of seats being moved to seal off apertures in the inlet conduit, thereby inhibiting flow into the outlet conduit.
摘要翻译：具有防篡改安全特征的压力调节系统。一对座位安装在环形管上。具有固定限制的第一排放管从入口导管延伸到第一室。第一室通过第二隔膜与第二室隔开。第二排放管从第二室延伸到出口管。泄漏机构被密封在出口管道内并且包括可压缩波纹管。当在出口管道中达到预定压力水平时发生压缩时，第三座椅与出口导管和第一腔室脱离密封关系。这导致室中的压力的不平衡，其导致一对座被移动以密封入口导管中的孔，从而阻止流入出口导管。

6. 发明授权

US4465092A Valve with anti-removal feature 失效
标题翻译：阀门具有防脱落功能
公开(公告)号：US4465092A
公开(公告)日：1984-08-14
申请号：US197477
申请日：1980-10-16
申请人： Steven Vitale
发明人： Steven Vitale
IPC分类号： F16K35/06 , F16K51/00
CPC分类号： F16K35/06 , Y10T137/6157 , Y10T137/7256
摘要： A lockable valve having features which impede unauthorized removal of the valve from a conduit to which the valve is connected. The housing of the valve has a passageway. A valve element is movably mounted to the housing for occluding the passageway. A structure operatively associated with the valve element impedes disengagement of the valve from the conduit when the valve element is in a first position. Preferably, the housing of the valve is attachable to the conduit by a fitting which is movably mounted to the housing and such fitting is accessible only through the passageway of the housing when the valve is mounted to a conduit. When the valve element occludes the passageway, it blocks access to the fitting and hence serves as part of the disengagement-impeding structure. The valve may include lugs for connecting the fitting to the housing for movement therewith when valve element is in a second position. If such lugs are provided, the valve can be disengaged from the conduit by moving the valve element to the second position and then moving the housing.
摘要翻译：一种可锁定阀，其特征在于阻止阀从未连接阀门的导管未经许可的移除。阀门的外壳有通道。阀元件可移动地安装到壳体以阻塞通道。当阀元件处于第一位置时，与阀元件可操作地相关联的结构阻止阀与导管的分离。优选地，阀的壳体通过可移动地安装到壳体的配件附接到导管，并且当阀安装到导管时，这种配件仅通过壳体的通道可接近。当阀元件堵塞通道时，它阻止对配件的接近，因此用作防脱离结构的一部分。阀可以包括用于在阀元件处于第二位置时将配件连接到壳体以与其一起运动的凸耳。如果设置这样的凸耳，则可以通过将阀元件移动到第二位置然后移动壳体而将阀从导管脱离。

7. 发明授权

US4369573A Pipe cutter 失效
标题翻译：管道切割机
公开(公告)号：US4369573A
公开(公告)日：1983-01-25
申请号：US194219
申请日：1980-10-06
申请人： Steven Vitale
发明人： Steven Vitale
IPC分类号： B23D21/14
CPC分类号： B23D21/14
摘要： A pipe cutter for cutting the wall of a pipe from within the bore of the pipe. The cutter includes a blade and mechanisms for supporting the blade within the pipe to be cut, urging the blade outwardly of the pipe to engage it with the pipe wall and moving the blade relative to the pipe so that the blade cuts the wall. The cutter may include an expansible gripper assembly for engaging the pipe wall to retain the blade against movement axially of the pipe during the cutting operation. The gripper assembly is preferably operative upon operation of the blade movement mechanism. The blade may be a circular saw, the blade movement mechanism may be arranged to move the saw in orbital fashion around the axis of the pipe and the gripper assembly may be connected to the blade so that the gripper assembly prevents rotation of the saw about its axis during the cutting operation. When this arrangement is utilized, all of the teeth of the saw are successively engaged with the pipe wall.
摘要翻译：一种管道切割器，用于从管道的孔内切割管道的壁。切割器包括刀片和用于将刀片支撑在待切割的管道内的机构，将叶片向外推动以使其与管壁接合并使其相对于管道移动，使得刀片切割壁。切割器可以包括可膨胀的夹持器组件，用于接合管壁以在切割操作期间保持刀片不受管道的轴向移动。夹具组件优选地在刀片移动机构的操作时操作。叶片可以是圆锯，叶片运动机构可以布置成围绕管的轴线以轨道方式移动锯，并且夹持器组件可以连接到叶片，使得夹持器组件防止锯绕其旋转在切割操作期间。当使用这种布置时，锯的所有齿都与管壁相继接合。

8. 发明申请

US20070196961A1 Gate CD trimming beyond photolithography 有权
标题翻译：门光盘修剪超出光刻
公开(公告)号：US20070196961A1
公开(公告)日：2007-08-23
申请号：US11359670
申请日：2006-02-22
申请人： Steven Vitale
发明人： Steven Vitale
IPC分类号： H01L21/339
CPC分类号： H01L21/28123
摘要： A semiconductor device is fabricated with a selected critical dimension. A gate dielectric layer is formed over a semiconductor body. A gate layer comprised of a conductive material, such as polysilicon, is formed over the gate dielectric layer. The gate layer is patterned to form a gate electrode having a first horizontal dimension. One or more growth-stripping operations are performed to reduce a critical dimension of the gate electrode to a second horizontal dimension, where the second horizontal dimension is less than the first horizontal dimension.
摘要翻译：以选定的临界尺寸制造半导体器件。栅电介质层形成在半导体本体上。在栅极电介质层上形成由诸如多晶硅的导电材料构成的栅极层。图案化栅极层以形成具有第一水平尺寸的栅电极。执行一个或多个生长剥离操作以将栅电极的临界尺寸减小到第二水平尺寸，其中第二水平尺寸小于第一水平尺寸。

9. 发明申请

US20070161245A1 Use of dual mask processing of different composition such as inorganic/organic to enable a single poly etch using a two-print-two-etch approach 有权
标题翻译：使用不同成分的双掩模加工，如无机/有机，可使用双印双蚀刻方法进行单层聚蚀刻
公开(公告)号：US20070161245A1
公开(公告)日：2007-07-12
申请号：US11326392
申请日：2006-01-06
申请人： Benjamen Rathsack , James Blatchford , Steven Vitale
发明人： Benjamen Rathsack , James Blatchford , Steven Vitale
IPC分类号： H01L21/302
CPC分类号： H01L21/027 , H01L21/033 , H01L21/32139
摘要： In accordance with the invention, there are methods of making an integrated circuit, an integrated circuit device, and a computer readable medium. A method can comprise forming a first layer over a semiconductor substrate, forming a first mask layer over the semiconductor substrate, and using the first mask layer to pattern first features. The method can also include forming a second mask layer over the first features, using the second mask layer to pattern portions of the first features, removing the second mask layer, and removing the first mask layer.
摘要翻译：根据本发明，存在制造集成电路，集成电路器件和计算机可读介质的方法。一种方法可以包括在半导体衬底上形成第一层，在半导体衬底上形成第一掩模层，以及使用第一掩模层来图案化第一特征。该方法还可以包括在第一特征上形成第二掩模层，使用第二掩模层来图案化第一特征的部分，去除第二掩模层，以及去除第一掩模层。

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