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1. 发明授权

US06660543B1 Method of measuring implant profiles using scatterometric techniques wherein dispersion coefficients are varied based upon depth 有权
标题翻译：使用散射测量技术测量植入物轮廓的方法，其中色散系数基于深度而变化
公开(公告)号：US06660543B1
公开(公告)日：2003-12-09
申请号：US10284996
申请日：2002-10-31
申请人： James Broc Stirton , Kevin R. Lensing , Homi E. Nariman , Steven P. Reeves
发明人： James Broc Stirton , Kevin R. Lensing , Homi E. Nariman , Steven P. Reeves
IPC分类号： H01L2166
CPC分类号： G01N21/4788 , H01J2237/31705 , H01L22/34
摘要： The present invention is directed to several inventive methods for characterizing implant profiles. In one embodiment, the method comprises providing a semiconducting substrate, forming a first plurality of implant regions in the substrate, and illuminating at least one of the first plurality of implant regions with a light source in a scatterometry tool, wherein the scatterometry tool generates a profile trace corresponding to an implant profile of the illuminated implant region. The method further comprises creating at least one profile trace corresponding,to an anticipated profile of the implant region, wherein, in creating the profile trace, values of at least one of an index of refraction (n) and a dielectric constant (k) are varied, and comparing the generated profile trace to at least one created profile trace.
摘要翻译：本发明涉及用于表征植入物轮廓的若干发明方法。在一个实施例中，该方法包括提供半导体衬底，在衬底中形成第一多个植入区域，以及在散射测量工具中用光源照射第一组多个植入区域中的至少一个，其中散射仪工具产生轮廓迹线对应于照射的植入区域的植入物轮廓。所述方法还包括产生与植入区域的预期轮廓对应的至少一个轮廓轨迹，其中在产生轮廓轨迹时，折射率（n）和介电常数（k）中的至少一个的值为变化，并将生成的简档跟踪与至少一个创建的简档跟踪进行比较。

2. 发明授权

US06927080B1 Structures for analyzing electromigration, and methods of using same 失效
标题翻译：用于分析电迁移的结构及其使用方法
公开(公告)号：US06927080B1
公开(公告)日：2005-08-09
申请号：US10281760
申请日：2002-10-28
申请人： Homi E. Nariman , James Broc Stirton , Kevin R. Lensing , Steven P. Reeves
发明人： Homi E. Nariman , James Broc Stirton , Kevin R. Lensing , Steven P. Reeves
IPC分类号： H01L21/66 , H01L23/544
CPC分类号： H01L22/34 , G01R31/2858
摘要： The present invention is generally directed to various structures for analyzing electromigration, and methods of using same. In one illustrative embodiment, the method includes forming a grating structure above a semiconducting substrate, the grating structure being comprised of a plurality of conductive features, forcing an electrical current through at least one of the conductive features until a resistance of the conductive feature increases by a preselected amount, and performing at least one scatterometric measurement of the conductive feature to determine a critical dimension of the conductive feature. In another illustrative embodiment, the method includes forming a plurality of grating structures above a semiconducting substrate, each of the grating structures being comprised of a plurality of conductive features having the same critical dimension, the critical dimension of the features of each of the plurality of grating structures being different, and forcing an electrical current through at least one of the conductive features in each of the plurality of grating structures until a resistance of the conductive feature increases by a preselected amount.
摘要翻译：本发明一般涉及用于分析电迁移的各种结构及其使用方法。在一个说明性实施例中，该方法包括在半导体衬底之上形成光栅结构，该光栅结构由多个导电特征组成，迫使电流通过至少一个导电特征直到导电特征的电阻增加预选量，以及执行导电特征的至少一个散射测量以确定导电特征的临界尺寸。在另一说明性实施例中，该方法包括在半导体衬底之上形成多个光栅结构，每个光栅结构由具有相同临界尺寸的多个导电特征组成，多个光栅结构不同，并且迫使电流通过多个光栅结构中的每一个中的导电特征中的至少一个，直到导电特征的电阻增加预选量。

3. 发明授权

US06933158B1 Method of monitoring anneal processes using scatterometry, and system for performing same 失效
标题翻译：使用散射法监测退火处理的方法，以及执行相同的系统
公开(公告)号：US06933158B1
公开(公告)日：2005-08-23
申请号：US10285041
申请日：2002-10-31
申请人： Kevin R. Lensing , James Broc Stirton , Homi E. Nariman , Steven P. Reeves
发明人： Kevin R. Lensing , James Broc Stirton , Homi E. Nariman , Steven P. Reeves
IPC分类号： G01N21/21 , G01N21/47 , H01L21/265 , H01L21/324 , H01L21/66 , H01L23/544
CPC分类号： G01N21/4788 , G01N21/211 , H01L21/26513 , H01L21/324 , H01L22/20 , H01L22/34
摘要： The present invention is directed to several inventive methods of monitoring anneal processes performed on implant regions, and a system for accomplishing same. In one aspect, the method comprises forming a first plurality of implant regions in a semiconducting substrate, performing at least one anneal process on implant regions, performing a scatterometric measurement of at least one of the implant regions after at least a portion of the anneal process is performed to determine a profile of the implant region and determining an effectiveness of the anneal process based upon the determined profile of the implant region. In other embodiments, one or more parameters of the anneal process may be varied on subsequently processed substrates based upon the determined efficiency of the anneal process.
摘要翻译：本发明涉及用于监测在植入区域上执行的退火处理的几种发明方法，以及用于实现其的系统。在一个方面，该方法包括在半导体衬底中形成第一多个注入区域，在注入区域上执行至少一个退火工艺，在退火工艺的至少一部分之后执行至少一个注入区域的散射测量被执行以确定植入区域的轮廓并且基于所确定的植入区域的轮廓来确定退火过程的有效性。在其他实施例中，退火工艺的一个或多个参数可以基于确定的退火工艺的效率在随后处理的衬底上变化。

4. 发明授权

US07236848B2 Data representation relating to a non-sampled workpiece 有权
标题翻译：与未采样的工件有关的数据表示
公开(公告)号：US07236848B2
公开(公告)日：2007-06-26
申请号：US11224388
申请日：2005-09-12
申请人： Steven P. Reeves , Michael G. McIntyre
发明人： Steven P. Reeves , Michael G. McIntyre
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , G05B19/4183 , G05B2219/32075 , G05B2219/32194 , G05B2219/37222 , G05B2219/45031 , Y02P90/10 , Y02P90/20 , Y02P90/22
摘要： A method, apparatus, and a system for providing data representation associated with non-sampled workpieces. Measured metrology data relating to a first workpiece is received. Metrology data corresponding to a second workpiece is approximated based upon the metrology data relating to the first workpiece to provide a projected metrology data relating to the second workpiece.
摘要翻译：一种用于提供与未采样工件相关联的数据表示的方法，装置和系统。接收与第一工件相关的测量的测量数据。基于与第一工件相关的计量数据来近似对应于第二工件的计量数据，以提供与第二工件相关的投影度量数据。

5. 发明授权

US06881594B1 Method of using scatterometry for analysis of electromigration, and structures for performing same 失效
标题翻译：使用散射法分析电迁移的方法，以及执行相同的结构
公开(公告)号：US06881594B1
公开(公告)日：2005-04-19
申请号：US10281666
申请日：2002-10-28
申请人： James Broc Stirton , Steven P. Reeves , Homi E. Nariman , Kevin R. Lensing
发明人： James Broc Stirton , Steven P. Reeves , Homi E. Nariman , Kevin R. Lensing
IPC分类号： G01N21/17 , G01N21/47 , H01L21/00
CPC分类号： G01N21/47 , G01N21/1717 , G01N2021/1721
摘要： The present invention is generally directed to various methods of using scatterometry for analysis of electromigration. In one illustrative embodiment, the method comprises forming a grating structure above a semiconducting substrate, the grating structure being comprised of a plurality of conductive structures, forcing an electrical current through at least one of the conductive structures and performing scatterometric measurements of at least one conductive structure to detect a change in shape of at least a portion of the conductive structure. In further embodiments, the method comprises determining a susceptibility of at least one conductive structure to electromigration based upon the detected change in shape of the conductive structure.
摘要翻译：本发明一般涉及使用散射法分析电迁移的各种方法。在一个说明性实施例中，该方法包括在半导体衬底上形成光栅结构，该光栅结构由多个导电结构组成，迫使电流通过至少一个导电结构并执行至少一个导电的散射测量结构以检测导电结构的至少一部分的形状变化。在另外的实施例中，该方法包括基于检测到的导电结构的形状的变化来确定至少一个导电结构对电迁移的敏感性。

6. 发明授权

US06785009B1 Method of using high yielding spectra scatterometry measurements to control semiconductor manufacturing processes, and systems for accomplishing same 有权
标题翻译：使用高产量光谱散射测量来控制半导体制造工艺的方法以及用于实现其的系统
公开(公告)号：US06785009B1
公开(公告)日：2004-08-31
申请号：US10084987
申请日：2002-02-28
申请人： James Broc Stirton , Kevin R. Lensing , Hormuzdiar E. Nariman , Steven P. Reeves
发明人： James Broc Stirton , Kevin R. Lensing , Hormuzdiar E. Nariman , Steven P. Reeves
IPC分类号： G01B1114
CPC分类号： G01N21/956 , G01N21/4788 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method of using high yielding spectra scatterometry measurements to control semiconductor manufacturing processes and systems for accomplishing same is disclosed. In one embodiment, the method comprises providing a library comprised of at least one target optical characteristic trace of a grating structure comprised of a plurality of gate stacks, the target trace corresponding to a semiconductor device having at least one desired electrical performance characteristic, providing a substrate having at least one grating structure formed thereabove, the formed grating structure comprised of a plurality of gate stacks, illuminating at least one grating structure formed above said substrate, measuring light reflected off of the grating structure formed above the substrate to generate an optical characteristic trace for the formed grating structure, and comparing the generated optical characteristic trace to the target trace.
摘要翻译：公开了一种使用高产量光谱散射测量来控制半导体制造工艺和实现其的系统的方法。在一个实施例中，该方法包括提供由至少一个由多个栅极堆叠组成的光栅结构的目标光学特征迹线的库，该目标轨迹对应于具有至少一个期望的电气性能特征的半导体器件，衬底，其具有形成在其上的至少一个光栅结构，所形成的光栅结构由多个栅极堆叠组成，照射形成在所述衬底上方的至少一个光栅结构，测量从衬底上形成的光栅结构反射的光，以产生光学特性跟踪形成的光栅结构，并将生成的光学特征曲线与目标轨迹进行比较。

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