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    • 3. 发明授权
    • Apparatus comprising a magneto-optic isolator utilizing a garnet layer
    • 装置包括利用石榴石层的磁光隔离器
    • US5146361A
    • 1992-09-08
    • US850148
    • 1992-03-12
    • Steven J. Licht
    • Steven J. Licht
    • G02F1/00G02F1/09
    • G02F1/0036G02F1/093
    • Apparatus according to the invention comprises a magneto-optic isolator. The isolator comprises a magneto-optic member that comprises a single crystal substrate and a single crystal garnet layer on the substrate. The garnet layer comprises a first and a second stratum. The composition of the former is chosen such that the lattice constant of the first stratum material is substantially equal to that of the substrate at a first temperature (e.g., room temperature), and is substantially larger than that of the substrate at a second temperature (e.g., the garnet growth temperature) that is higher than the first temperature. The composition of the second stratum is chosen such that the lattice constant of the second stratum is less than that of the substrate at the first temperature, and is less than that of the first stratum at the second temperature. Wafers according to the invention typically are less subject to fracture than analogous prior art wafers.
    • 根据本发明的装置包括磁光隔离器。 隔离器包括在基板上包括单晶基板和单晶石榴石层的磁光部件。 石榴石层包括第一层和第二层。 选择前者的组成使得第一层材料的晶格常数在第一温度(例如室温)下基本上等于衬底的晶格常数,并且在第二温度下基本上大于衬底的晶格常数 例如,石榴石生长温度)高于第一温度。 选择第二层的组成使得第二层的晶格常数在第一温度下小于衬底的晶格常数,并且小于第二层的第一层的晶格常数。 根据本发明的晶片通常比类似的现有技术的晶片更少受到破坏。