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1. 发明授权

US07016097B2 Optical device with a temperature insensitive optical pathlength 有权
标题翻译：光学器件具有温度不敏感的光程长度
公开(公告)号：US07016097B2
公开(公告)日：2006-03-21
申请号：US10036397
申请日：2002-01-07
申请人： David A. Ackerman , Charles D. Brandle, Jr. , Glen R. Kowach , Lynn F. Schneemeyer
发明人： David A. Ackerman , Charles D. Brandle, Jr. , Glen R. Kowach , Lynn F. Schneemeyer
IPC分类号： G02F1/01 , G02F1/07 , H04J14/02 , H01S3/13
CPC分类号： G02F1/0147 , G02B2006/12135 , H04B10/503 , H04B10/572 , H04J14/02
摘要： The thermo-optic behavior of an optical path over a range of temperatures is controlled by determining a figure of merit (FoM) for the optical path and including in the path a body of NaBi(Mo1-xWxO4)2 crystalline material that enables the conditions specified by the FOM to be satisfied. The NaBi(Mo1-xWxO4)2 crystalline material is highly transparent at a wavelength of radiation propagating in the path, and has a coefficient of thermal expansion (CTE) and a refractive index n such that the CTE and dn/dT of the etalon compensate one another so as to perform frequency discrimination that is essentially temperature insensitive over the range ΔT. The NaBi(Mo1-xWxO4)2 crystalline material exhibits temperature independent transmission characteristics at about room temperature and at a wavelength of about 1550 nm.
摘要翻译：通过确定光路的品质因数（FoM）来控制在一定温度范围内的光路的热光学行为，并且在路径中包括NaBi（Mo 1-x-x）使得能够满足由FOM规定的条件的W 2 O 3结晶材料。 NaBi（Mo 1-x x W 2 O 4）2结晶材料在波长为辐射在路径中传播，并且具有热膨胀系数（CTE）和折射率n，使得标准具的CTE和dn / dT彼此补偿，以便在DeltaT的范围内进行基本上温度不敏感的频率鉴别。 NaBi（Mo 1-x W 2 x 4 O 4）2结晶材料在约20℃下显示出与温度无关的传输特性室温和约1550nm的波长。

2. 发明授权

US5530267A Article comprising heteroepitaxial III-V nitride semiconductor material on a substrate 失效
标题翻译：一种在衬底上包含异质外延III-V族氮化物半导体材料的制品
公开(公告)号：US5530267A
公开(公告)日：1996-06-25
申请号：US403329
申请日：1995-03-14
申请人： Charles D. Brandle, Jr. , Denis N. Buchanan , Elliot H. Hartford, Jr. , Eric S. Hellman , Lynn F. Schneemeyer
发明人： Charles D. Brandle, Jr. , Denis N. Buchanan , Elliot H. Hartford, Jr. , Eric S. Hellman , Lynn F. Schneemeyer
IPC分类号： C30B29/24 , C30B29/38 , H01L21/20 , H01L21/203 , H01L21/205 , H01L31/18 , H01L33/00 , H01S5/00 , H01S5/02 , H01S5/323 , H01L29/201
CPC分类号： H01L31/1852 , H01L33/007 , Y02E10/544
摘要： We have discovered advantageous substrates for III-V nitride semiconductors such as GaN. The substrate material is of the YbFe.sub.2 O.sub.4 or InFeO.sub.3 (ZnO).sub.n structure type and has general composition RAO.sub.3 (MO).sub.n, where R is one or more of Sc, In, Y and the lanthanides (atomic number 67-71); A is one or more of Fe(III), Ga, and Al; M is one or more of Mg, Mn, Fe(II), Co, Cu, Zn and Cd; and n is an integer.gtoreq.1, typically
摘要翻译：我们已经发现了诸如GaN的III-V族氮化物半导体的有利衬底。基体材料为YbFe2O4或InFeO3（ZnO）n结构型，具有一般成分RAO3（MO）n，其中R为Sc，In，Y和镧系元素（原子序数67-71）中的一种或多种。 A是Fe（III），Ga和Al中的一种或多种; M是Mg，Mn，Fe（II），Co，Cu，Zn和Cd中的一种或多种; 并且n是整数> / = 1，通常<9。此外，衬底材料被选择为具有与要沉积在其上的III-V族氮化物半导体材料提供小于+/- 5％晶格失配的晶格常数。通常可以容易且相对廉价地制造单晶形式的至少一些基底材料（例如，ScMgAlO 4）在基底平面上易于清除，并且在典型的沉积条件下基本上不与III-V族氮化物发生化学反应。预期使用用于光电子器件制造的新型基底材料。

3. 发明授权

US5021302A Bismuth-iron garnets with large growth-induced magnetic anisotropy 失效
标题翻译：具有大生长诱导磁各向异性的铋铁石榴石
公开(公告)号：US5021302A
公开(公告)日：1991-06-04
申请号：US213431
申请日：1988-06-03
申请人： Charles D. Brandle, Jr. , Vincent J. Fratello , Lars C. Luther , Susan E. G. Slusky
发明人： Charles D. Brandle, Jr. , Vincent J. Fratello , Lars C. Luther , Susan E. G. Slusky
IPC分类号： G02F1/00 , G11B11/105 , H01F10/24
CPC分类号： G02F1/0036 , G11B11/10586 , H01F10/245 , Y10S428/90
摘要： High magnetic anisotropy is achieved in bismuth-iron garnet materials which comprise a significant amount of europium, samarium, or terbium. Such materials may be made in the form of epitaxial layers grown on a nonmagnetic substrate, e.g., in the manufacture of magnetic bubble devices. On account of significant Faraday rotation, such materials may also be used in magnetic-optical devices.
摘要翻译：在包含大量铕，钐或铽的铋 - 铁石榴石材料中实现了高磁各向异性。这样的材料可以以在非磁性衬底上生长的外延层的形式制成，例如在制造磁性气泡装置中。由于重要的法拉第旋转，这种材料也可用于磁光设备中。

4. 发明授权

US4894583A Display devices with yttrium orthosilicate phosphors 失效
标题翻译：具有钇原硅酸荧光体的显示装置
公开(公告)号：US4894583A
公开(公告)日：1990-01-16
申请号：US239715
申请日：1988-09-02
申请人： George W. Berkstresser , Charles D. Brandle, Jr. , Joseph Shmulovich , Alejandro J. Valentino
发明人： George W. Berkstresser , Charles D. Brandle, Jr. , Joseph Shmulovich , Alejandro J. Valentino
IPC分类号： C09K11/77 , C09K11/79 , H01J29/20
CPC分类号： H01J29/20 , C09K11/7774 , C09K11/7792
摘要： Certain yttrium orthosillicate phosphors doped with various rare-earths are particularly suitable for use in various display devices including cathode ray tubes. Included are single crystal phosphors which exhibit high brightness and long life under high energy excitation and conventional powder phosphors with great sensitivity.
摘要翻译：掺杂有各种稀土的某些钇原锡磷光体特别适用于包括阴极射线管在内的各种显示装置。包括在高能量激发下表现出高亮度和长寿命的单晶荧光体和具有高灵敏度的常规粉末荧光体。

5. 发明授权

US4981341A Apparatus comprising a magneto-optic isolator utilizing a garnet layer 失效
标题翻译：装置包括利用石榴石层的磁光隔离器
公开(公告)号：US4981341A
公开(公告)日：1991-01-01
申请号：US380579
申请日：1989-07-14
申请人： Charles D. Brandle, Jr. , Vincent J. Fratello , Steven J. Licht
发明人： Charles D. Brandle, Jr. , Vincent J. Fratello , Steven J. Licht
IPC分类号： G02B27/28 , G02F1/00 , G02F1/09
CPC分类号： G02F1/093 , G02F1/0036
摘要： Apparatus according to the invention comprises magneto-optic isolator means that utilize a novel temperature compensation scheme. The scheme involves the use of a composite magneto-optic member that comprises a first single crystal garnet layer that does not have a compensation temperature within the operating temperature range of the isolator, and further comprises a single crystal garnet layer (the "compensation point layer") that has a compensation temperature within the operating temperature range of the isolator. Exemplarily, the compensation point layer has composition (Bi.sub.0.8; Tb.sub.1.1 Gd.sub.1.1)(Fe.sub.4.6 Ga.sub.0.4)O.sub.12, and is grown on an CMZ:GGG substrate, and the first garnet layer has composition (Bi.sub.1.2 Tb.sub.1.8)(Fe.sub.4.6 Ga.sub.0.4)O.sub.12 and is grown on the compensation point layer. The novel temperature compensation scheme can result in isolators having improved extinction ratio with relatively small additional path length in the magneto-optic material.

6. 发明授权

US4199396A Method for producing single crystal gadolinium gallium garnet 失效
标题翻译：单晶钆镓石榴石的制备方法
公开(公告)号：US4199396A
公开(公告)日：1980-04-22
申请号：US900268
申请日：1978-04-26
申请人： Charles D. Brandle, Jr. , John B. Hassell, Jr.
发明人： Charles D. Brandle, Jr. , John B. Hassell, Jr.
IPC分类号： C30B15/00 , B01J17/18 , C01F17/00
CPC分类号： C30B15/00 , C30B29/28
摘要： Method for producing virtually perfect massive unicrystalline gadolinium gallium garnet from a melt of gadolinium and gallium oxides containing an addition of calcium, magnesium or strontium ions.
摘要翻译：从含有钙，镁或锶离子添加的钆和镓氧化物的熔体制造几乎完美的大块单晶钆镓石榴石的方法。

7. 发明授权

US5608570A Article comprising a magneto-optic material having low magnetic moment 失效
标题翻译：本文包括具有低磁矩的磁光材料
公开(公告)号：US5608570A
公开(公告)日：1997-03-04
申请号：US498099
申请日：1995-07-05
申请人： Charles D. Brandle, Jr. , Vincent J. Fratello , Steven J. Licht
发明人： Charles D. Brandle, Jr. , Vincent J. Fratello , Steven J. Licht
IPC分类号： G02F1/00 , H01F10/24
CPC分类号： H01F10/245 , G02F1/0036 , Y10S428/90
摘要： Garnet material according to the invention exhibits a substantially rectangular magnetization loop, with .vertline.H.sub.S .vertline.>.vertline.4.pi.M.sub.S .vertline.Oe, where H.sub.S is the switching magnetic field of the loop, and 4.pi.M.sub.S is the saturation magnetization. The material exhibits "latching" behavior, and can advantageously be used in magneto-optic isolators and other magneto-optic devices. For instance, the material enables manufacture of isolators that do not contain a permanent magnet. An exemplary garnet according to the invention has nominal composition Bi.sub.0.75 Eu.sub.1.5 Ho.sub.0.75 Fe.sub.4.1 Ga.sub.0.9 O.sub.12.
摘要翻译：根据本发明的石榴石材料表现出基本上矩形的磁化回路，其中HS是环路的开关磁场，4πMS是饱和磁化强度。该材料表现出“闭锁”行为，并且可以有利地用于磁光隔离器和其它磁光器件中。例如，该材料能够制造不含永久磁铁的隔离器。根据本发明的示例性石榴石具有标称组成Bi0.75Eu1.5Ho0.75Fe4.1Ga0.9O12。

8. 发明授权

US4835437A Cathode ray tube with single crystal target 失效
标题翻译：阴极射线管，单晶靶
公开(公告)号：US4835437A
公开(公告)日：1989-05-30
申请号：US195435
申请日：1988-05-16
申请人： George W. Berkstresser , Charles D. Brandle, Jr.
发明人： George W. Berkstresser , Charles D. Brandle, Jr.
IPC分类号： C09K11/08 , C09K11/77 , C30B19/02 , H01J29/20 , H01J29/24 , H01J29/26
CPC分类号： H01J29/26 , C09K11/08 , C09K11/7774 , C30B19/02 , C30B29/28 , H01J29/20 , H01J29/24
摘要： Light output of single crystal phosphors used on cathode ray tubes can be vastly improved by use of a microfaceted surface structure conveniently produced by use of a single crystal epitaxial layer with lattice constant slightly larger than the single crystal substrate. Such epitaxial layers are conveniently grown using substituents that increase the lattice constant compared to the single crystal substrate.
摘要翻译：通过使用通过使用晶格常数略大于单晶衬底的单晶外延层而方便地制造的微细表面结构，可以极大地改善阴极射线管上使用的单晶荧光体的光输出。使用与单晶衬底相比增加晶格常数的取代基方便地生长这样的外延层。

9. 发明授权

US4802180A Growth of congruently melting gadolinium scandium gallium garnet 失效
标题翻译：一致熔化钆镓石榴石的生长
公开(公告)号：US4802180A
公开(公告)日：1989-01-31
申请号：US857846
申请日：1986-04-30
申请人： Charles D. Brandle, Jr. , Vincent J. Fratello , Alejandro J. Valentino
发明人： Charles D. Brandle, Jr. , Vincent J. Fratello , Alejandro J. Valentino
IPC分类号： C30B15/00 , H01S3/16
CPC分类号： C30B29/22 , C30B15/00 , C30B29/28 , H01S3/16
摘要： The congruently melting composition of gadolinium scandium gallium garnet comprisesGd.sub.2.96.+-.0.03 Sc.sub.1.90.+-.0.05 Ga.sub.3.14+0.05 O.sub.12.The composition may be used as the substrate for magnetic bubble domain devices or, when doped with a suitable activator (e.g., Cr.sup.+3 or Nd.sup.+3 or both), may serve as the active medium of a solid state laser.
摘要翻译：钆镓石榴石的一致熔融组成包括Gd2.96 +/- 0.03 Sc1.90 +/- 0.05Ga3.14 + 0.05O12。组合物可以用作磁性气泡区域器件的基底，或者当掺入合适的活化剂（例如Cr + 3或Nd + 3或两者）时，可用作固体激光器的活性介质。

10. 发明授权

US5164041A Method of growing rare earth doped orthosilicates(LN2-XREXSIO5) 失效
标题翻译：生长稀土金刚烷酸的方法（LN2-XREXSIO5）
公开(公告)号：US5164041A
公开(公告)日：1992-11-17
申请号：US637846
申请日：1991-01-04
申请人： George W. Berkstresser , Charles D. Brandle, Jr.
发明人： George W. Berkstresser , Charles D. Brandle, Jr.
IPC分类号： C30B29/34 , C30B15/00 , H01S3/16
CPC分类号： C30B15/00 , C30B29/34 , Y10S117/906
摘要： The invention is a technique for the growth of single crystals of rare earth doped rare-earth orthosilicate crystals which may be used as the laser medium in solid-state non-semiconductor lasers. This type of laser has applications in electronics, communications, aerospace systems, and manufacturing technology where high optical output lasers are utilized. Of particular interest is the Y.sub.2-x Nd.sub.x SiO.sub.5 crystal, with x being up to 0.3, which may be efficiently pumped by a semiconductor laser, solid state non-semiconductor laser, a flashlamp or some other source of light radiation, and has been found to be operable at very high optical output. The rare-earth orthosilicate crystals are grown in accordance with this invention by a Czochralski technique from a molten mixture of constituent oxides in an inert atmosphere containing oxygen. Inclusion of oxygen in the inert atmosphere in concentration of from about 300 to about 9,000 PPM of oxygen resulted in substantial reduction in the density of light scattering defect sites and, thus, in substantial increase in the optical energy which may be applied to the crystal without causing substantial damage to the crystal in comparison to the crystals grown in an inert atmosphere containing less than 300 PPM, such as 200 PPM and less, of oxygen. By application of the growth atmosphere composition control, optical damage thresholds have been increased by more than an order of magnitude.

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