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    • 7. 发明申请
    • MEMORY DEVICE, MEMORY SYSTEM, AND OPERATING METHODS THEREOF
    • 存储器件,存储器系统及其操作方法
    • US20130304982A1
    • 2013-11-14
    • US13836659
    • 2013-03-15
    • Bu Il JUNGSo Young KIM
    • Bu Il JUNGSo Young KIM
    • G11C11/403
    • G11C11/403G11C11/40615G11C11/40622
    • A memory device, a memory system, and operating methods thereof are provided. The method of operating the memory device, which includes a first memory cell and a second memory cell neighboring the first memory cell, includes counting a disturbance value of the second memory cell each time the first memory cell is accessed, updating a disturbance count value of the second memory cell based on the counting, adjusting a refresh schedule based on the disturbance count value of the second memory cell, a desired threshold and a maximum disturbance count value, and resetting the disturbance count value of the second memory cell and the maximum disturbance count value when the second memory cell is refreshed according to the adjusted refresh schedule.
    • 提供了存储器件,存储器系统及其操作方法。 包括与第一存储单元相邻的第一存储器单元和第二存储单元的存储器件的操作方法包括:在每次访问第一存储器单元时对第二存储器单元的干扰值进行计数,更新第二存储单元的扰动计数值 所述第二存储单元基于所述计数,基于所述第二存储单元的干扰计数值,期望阈值和最大扰动计数值来调整刷新调度,以及重置所述第二存储单元的扰动计数值和所述最大扰动 根据调整后的刷新时间表刷新第二存储单元时的计数值。