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1. 发明授权

US09294275B2 Method and apparatus for updating a group key in a wireless communication system 有权
标题翻译：用于更新无线通信系统中的组密钥的方法和装置
公开(公告)号：US09294275B2
公开(公告)日：2016-03-22
申请号：US14131590
申请日：2012-07-09
申请人： Kyung Joo Suh , Sung Ho Choi , Beom Sik Bae , Young Kyo Baek , Sang Soo Jeong , Seung Woo Seo , Young Hoon Park , Dong Hyun Je
发明人： Kyung Joo Suh , Sung Ho Choi , Beom Sik Bae , Young Kyo Baek , Sang Soo Jeong , Seung Woo Seo , Young Hoon Park , Dong Hyun Je
IPC分类号： H04L9/08 , H04L29/06 , H04W12/04
CPC分类号： H04L9/0891 , H04L9/0836 , H04L63/064 , H04L63/065 , H04L2209/601 , H04W12/02 , H04W12/04
摘要： The present invention relates to a method and apparatus for updating a key for encrypting multicast data in a wireless communication system. The method of the present invention is characterized by comprising: an information receiving step of receiving information on a group entry time and a group exit time from users who have newly entered an arbitrary group including at least one subgroup; a grouping step of grouping the users using the information on the group entry time and the group exit time; and a key transmission step of either transmitting, to the newly-entered users, keys related to the group and the subgroups, or updating, for the remaining users of the subgroups, both the key related to the subgroup to which the user exiting the group belongs and the key of the group and then transmitting the updated keys to the users of the subgroups.
摘要翻译：本发明涉及一种在无线通信系统中更新用于加密组播数据的密钥的方法和装置。本发明的方法的特征在于包括：信息接收步骤，从新进入包括至少一个子组的任意组的用户接收关于组进入时间和组退出时间的信息; 使用组入口时间和组退出时间的信息对用户进行分组的分组步骤; 以及密钥发送步骤，向新输入的用户发送与组和子组相关的密钥，或者为子组的剩余用户更新与用户离开组的子组相关的密钥属于该组的密钥，然后将更新的密钥发送给子组的用户。

2. 发明授权

US08980742B2 Method of manufacturing multi-level metal thin film and apparatus for manufacturing the same 有权
标题翻译：制造多层金属薄膜的方法及其制造方法
公开(公告)号：US08980742B2
公开(公告)日：2015-03-17
申请号：US13060404
申请日：2008-09-04
申请人： Jung Wook Lee , Young Hoon Park
发明人： Jung Wook Lee , Young Hoon Park
IPC分类号： H01L21/44 , H01L21/285 , C23C8/24 , C23C16/06 , C23C16/56 , C23C28/00
CPC分类号： H01L21/28556 , C23C8/24 , C23C16/06 , C23C16/56 , C23C28/322 , C23C28/34
摘要： Provided are methods and apparatuses for manufacturing a multilayer metal thin film without additional heat treatment processes. The method of manufacturing a multilayer metal thin film including steps of: (a) forming a first metal layer on a substrate by flowing a first metal precursor into a first reaction container; and (b) forming a second metal layer on the first metal layer by flowing a second metal precursor into a second reaction container, wherein the step (b) is performed in a range of a heat treatment temperature of the first metal layer so that the second metal layer is formed as the first metal layer is heat-treated.
摘要翻译：提供了用于制造多层金属薄膜而不需要额外的热处理工艺的方法和装置。一种制造多层金属薄膜的方法，包括以下步骤：（a）通过使第一金属前体流入第一反应容器而在基底上形成第一金属层; 和（b）通过使第二金属前体流入第二反应容器而在第一金属层上形成第二金属层，其中步骤（b）在第一金属层的热处理温度的范围内进行，随着第一金属层被热处理，形成第二金属层。

3. 发明授权

US08354292B2 CMOS image sensor having a crosstalk prevention structure and method of manufacturing the same 有权
标题翻译：具有串扰防止结构的CMOS图像传感器及其制造方法
公开(公告)号：US08354292B2
公开(公告)日：2013-01-15
申请号：US13413137
申请日：2012-03-06
申请人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
发明人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
IPC分类号： H01L21/339
CPC分类号： H01L27/1463 , H01L27/14603
摘要： In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region.
摘要翻译：在CMOS图像传感器的制造方法中，在N型基板上形成P型外延层。在P型外延层中形成深P +型阱层。在光电二极管防护区域内形成N型深护卫阱。 N型深护卫区与N型基板接触，并与工作电压端子连接。三重阱形成在光电二极管区域和外围电路区域中。三阱用于形成具有不同工作电压的PMOS和NMOS。在光电二极管区域中形成隔离区。光电二极管区域中的隔离区域具有与外围电路区域中的隔离区域的深度不同的深度。

4. 发明申请

US20120164783A1 CMOS IMAGE SENSOR HAVING A CROSSTALK PREVENTION STRUCTURE AND METHOD OF MANUFACTUREING THE SAME 有权
标题翻译：具有CROSSTALK预防结构的CMOS图像传感器及其制造方法
公开(公告)号：US20120164783A1
公开(公告)日：2012-06-28
申请号：US13413137
申请日：2012-03-06
申请人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
发明人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
IPC分类号： H01L31/18
CPC分类号： H01L27/1463 , H01L27/14603
摘要： In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region.
摘要翻译：在CMOS图像传感器的制造方法中，在N型基板上形成P型外延层。在P型外延层中形成深P +型阱层。在光电二极管防护区域内形成N型深护卫阱。 N型深护卫区与N型基板接触，并与工作电压端子连接。三重阱形成在光电二极管区域和外围电路区域中。三阱用于形成具有不同工作电压的PMOS和NMOS。在光电二极管区域中形成隔离区。光电二极管区域中的隔离区域具有与外围电路区域中的隔离区域的深度不同的深度。

5. 发明授权

US08138530B2 CMOS image sensor having a crosstalk prevention structure 有权
标题翻译：具有串扰防止结构的CMOS图像传感器
公开(公告)号：US08138530B2
公开(公告)日：2012-03-20
申请号：US12482960
申请日：2009-06-11
申请人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Keang
发明人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Keang
IPC分类号： H01L31/062
CPC分类号： H01L27/1463 , H01L27/14603
摘要： In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region.
摘要翻译：在CMOS图像传感器的制造方法中，在N型基板上形成P型外延层。在P型外延层中形成深P +型阱层。在光电二极管防护区域内形成N型深护卫阱。 N型深护卫区与N型基板接触，并与工作电压端子连接。三重阱形成在光电二极管区域和外围电路区域中。三阱用于形成具有不同工作电压的PMOS和NMOS。在光电二极管区域中形成隔离区。光电二极管区域中的隔离区域具有与外围电路区域中的隔离区域的深度不同的深度。

6. 发明授权

US08058036B2 Microorganism of Corynebacterium genus having enhanced L-lysine productivity and a method of producing L-lysine using the same 有权
标题翻译：具有增强的L-赖氨酸生产力的棒状杆菌属的微生物和使用其产生L-赖氨酸的方法
公开(公告)号：US08058036B2
公开(公告)日：2011-11-15
申请号：US12518572
申请日：2007-12-28
申请人： Hyun-min Koo , Sun-young Lee , Young-lyeol Yang , Hyo-jin Kim , Jun-ok Moon , Jae-woo Jang , Sang-jo Lim , Jong-soo Choi , Young-hoon Park
发明人： Hyun-min Koo , Sun-young Lee , Young-lyeol Yang , Hyo-jin Kim , Jun-ok Moon , Jae-woo Jang , Sang-jo Lim , Jong-soo Choi , Young-hoon Park
IPC分类号： C12P13/08 , C12P13/04 , C12N1/20 , C12N15/74 , C12N15/00
CPC分类号： C12P13/08
摘要： The present invention relates to a microorganism of Corynebacterium genus having enhanced L-lysine productivity and a method of producing L-lysine using the same. More particularly, the present invention relates to a recombinant microorganism of Corynebacterium genus having enhanced L-lysine productivity by inactivating endogenous NCgl2534 gene having the amino acid sequence containing repeated lysine residues and a method of producing L-lysine using the same.
摘要翻译：本发明涉及具有增强的L-赖氨酸生产力的棒状杆菌属微生物和使用其的L-赖氨酸生产方法。更具体地说，本发明涉及通过使具有含有重复赖氨酸残基的氨基酸序列的内源性NCgl2534基因失活而具有增强的L-赖氨酸生产力的棒状杆菌属的重组微生物和使用其的L-赖氨酸的制造方法。

7. 发明申请

US20110204468A1 Image sensor and method of manufacturing the same 审中-公开
公开(公告)号：US20110204468A1
公开(公告)日：2011-08-25
申请号：US13064914
申请日：2011-04-26
申请人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
发明人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689
摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

8. 发明申请

US20110163363A1 COMS image sensors and methods of manufacturing the same 有权
标题翻译： COMS图像传感器及其制造方法
公开(公告)号：US20110163363A1
公开(公告)日：2011-07-07
申请号：US13064289
申请日：2011-03-16
申请人： Ui-Sik Kim , Young-Hoon Park , Won-Je Park , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
发明人： Ui-Sik Kim , Young-Hoon Park , Won-Je Park , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14636
摘要： Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at an upper portion of the epitaxial layer in the first region. A plurality of gate structures may be formed on the epitaxial layer in the second, third and fourth regions. A first blocking layer may be formed on the gate structures and the epitaxial layer in the first and second regions. A first impurity layer may be formed at an upper portion of the epitaxial layer adjacent to the gate structures in the second region, and a second impurity layer at upper portions of the epitaxial layer adjacent to the gate structures in the third and fourth regions. A color filter layer may be formed over the photodiode. A microlens may be formed on the color filter layer.
摘要翻译：提供互补金属氧化物半导体（CMOS）图像传感器（CIS）及其制造方法，传感器包括在其中限定了第一，第二，第三和第四区域的基板上的外延层。可以在第一区域中的外延层的上部形成光电二极管。可以在第二，第三和第四区域中的外延层上形成多个栅极结构。可以在栅极结构和第一和第二区域中的外延层上形成第一阻挡层。可以在与第二区域中的栅极结构相邻的外延层的上部形成第一杂质层，并且在第三和第四区域中与栅极结构相邻的外延层的上部处形成第二杂质层。可以在光电二极管上方形成滤色器层。可以在滤色器层上形成微透镜。

9. 发明申请

US20110163362A1 Methods of fabricating image sensors and image sensors fabricated thereby 有权
标题翻译：制造图像传感器和图像传感器的方法
公开(公告)号：US20110163362A1
公开(公告)日：2011-07-07
申请号：US13064176
申请日：2011-03-09
申请人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
发明人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
IPC分类号： H01L31/14
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14689
摘要： A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region.
摘要翻译：制造图像传感器的方法可以包括提供包括光接收和非光接收区域的基板; 在非光接收区域上形成多个栅极; 将第一导电型掺杂剂离子注入到光接收区域中以形成钉扎光电二极管的第一掺杂区域; 主要使用栅极作为第一掩模，将与第一导电类型掺杂剂不同的第二导电型掺杂剂离子注入基板的整个表面; 在门的两个侧壁上形成间隔物; 并且其次使用包括间隔物的多个栅极作为第二掩模将第二导电型掺杂剂离子注入到基板的整个表面中，以完成被钉扎的光电二极管的第二掺杂区域。图像传感器可以包括基板; 形成在非光接收区域上的传输门; 在所述光接收区域中的第一掺杂剂区域; 以及形成在光接收区域的表面上的第二掺杂剂区域。

10. 发明授权

US07863435B2 L-threonine importer from Corynebacterium and a preparation method of a strain producing L-threonine 有权
标题翻译：棒状杆菌的L-苏氨酸进口商和产生L-苏氨酸的菌株的制备方法
公开(公告)号：US07863435B2
公开(公告)日：2011-01-04
申请号：US10582241
申请日：2004-11-23
申请人： Young-Hoon Park , Sang-Jo Lim , Seong-Jun Kim
发明人： Young-Hoon Park , Sang-Jo Lim , Seong-Jun Kim
IPC分类号： C07H21/04 , C12N15/77 , C12P13/04 , A61K31/70
CPC分类号： C07K14/34 , C12P13/08
摘要： The present invention relates to a preparation method of an L-threonine producing strain by utilizing a novel L-threonine importer identified from Corynebacterium glutamicum. The method can be advantageously used for the production of L-threonine by increasing the fermentation concentration of Lthreonine and the yield per unit thereof.
摘要翻译：本发明涉及利用从谷氨酸棒杆菌（Corynebacterium glutamicum）鉴定的新型L-苏氨酸进口商制备L-苏氨酸菌株的制备方法。该方法可有利地用于通过增加L-苏氨酸的发酵浓度和每单位产量来生产L-苏氨酸。

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