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1. 发明授权

US08735932B2 Light-emitting device including a connection layer formed on a side surface thereof 有权
标题翻译：发光装置，其包括在其侧表面上形成的连接层
公开(公告)号：US08735932B2
公开(公告)日：2014-05-27
申请号：US13253515
申请日：2011-10-05
申请人： Tae-hyung Kim , Cheol-soo Sone , Jong-in Yang , Sang-yeob Song , Si-hyuk Lee
发明人： Tae-hyung Kim , Cheol-soo Sone , Jong-in Yang , Sang-yeob Song , Si-hyuk Lee
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/382 , H01L33/62 , H01L2224/16 , H01L2933/0066
摘要： An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.
摘要翻译： LED包括具有第一和第二化合物层和有源层的化合物半导体结构，位于第二化合物半导体层顶部并连接到各个化合物层的第一和第二电极层。绝缘层涂覆在不同于第一和第二电极层所在的区域中。导电性粘合剂层形成在非导电性基板的顶部，将其连接到第一电极层和绝缘层。形成在非导电性基板的一个侧面上的粘合层是与导电性粘合剂层连接的第一电极连接层。形成在另一个侧表面上的第二电极连接层连接到第二电极层。通过在发光装置的相应侧表面上形成连接层，可以降低制造成本。

2. 发明申请

US20130029445A1 METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20130029445A1
公开(公告)日：2013-01-31
申请号：US13558051
申请日：2012-07-25
申请人： Gi Bum KIM , Won Goo HUR , Seung Woo CHOI , Seung Jae LEE , Si Hyuk LEE , Tae Hun KIM
发明人： Gi Bum KIM , Won Goo HUR , Seung Woo CHOI , Seung Jae LEE , Si Hyuk LEE , Tae Hun KIM
IPC分类号： H01L33/02
CPC分类号： H01L33/007 , H01L33/0095 , H01L33/20
摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: preparing a substrate including first and second main surfaces opposing each other; forming a plurality of protruding parts in the first main surface of the substrate; forming a light emitting stack on the first main surface on which the plurality of protruding parts are formed; forming a plurality of light emitting structures by removing portions of the light emitting stack formed in regions corresponding to groove parts around the plurality of protruding parts; and separating the substrate along the groove parts.
摘要翻译：提供一种制造半导体发光器件的方法，该方法包括：制备包括彼此相对的第一和第二主表面的衬底; 在基板的第一主表面上形成多个突出部分; 在形成有所述多个突出部的所述第一主表面上形成发光层; 通过去除形成在与所述多个突出部分周围的槽部分相对应的区域中的所述发光堆叠的部分来形成多个发光结构; 以及沿着所述凹槽部分分离所述基底。

3. 发明申请

US20110008924A1 METHOD OF FORMING PATTERN ON GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：在III族氮化物半导体衬底上形成图案的方法和制造III族氮化物半导体发光器件的方法
公开(公告)号：US20110008924A1
公开(公告)日：2011-01-13
申请号：US12885882
申请日：2010-09-20
申请人： Jong In YANG , Yu Seung KIM , Sang Yeob SONG , Si Hyuk LEE , Tae Hyung KIM
发明人： Jong In YANG , Yu Seung KIM , Sang Yeob SONG , Si Hyuk LEE , Tae Hyung KIM
IPC分类号： H01L33/30
CPC分类号： H01L21/3086 , H01L21/30612 , H01L33/0079 , H01L33/0095 , H01L33/22 , H01L33/32
摘要： There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.
摘要翻译：提供了在III族氮化物半导体衬底上形成图案的方法。根据本发明的一个方面的在III族氮化物半导体衬底上形成图案的方法可以包括：将激光束照射到至少一个第一区域以防止III族氮化物半导体衬底中的蚀刻; 以及使用被激光束照射的第一区域作为掩模，蚀刻除了第一区域之外的至少一个第二区域。

4. 发明申请

US20090137075A1 Method of manufacturing vertical light emitting diode 有权
标题翻译：制造垂直发光二极管的方法
公开(公告)号：US20090137075A1
公开(公告)日：2009-05-28
申请号：US12155277
申请日：2008-06-02
申请人： Jong In Yang , Sang Bum Lee , Si Hyuk Lee , Tae Hyung Kim
发明人： Jong In Yang , Sang Bum Lee , Si Hyuk Lee , Tae Hyung Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/007 , H01L33/44
摘要： Provided is a method of manufacturing a vertical LED, the method including the steps of: preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate; forming a p-electrode on the p-type nitride semiconductor layer; forming a structure support layer on the p-electrode; removing the sapphire substrate through an LLO (laser lift-off) process; isolating the light emitting structure into unit LED elements through an ISO (isolation) process; and forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures.
摘要翻译：提供一种制造垂直LED的方法，该方法包括以下步骤：制备蓝宝石衬底; 形成其中n型氮化物半导体层，有源层和p型氮化物半导体层依次层压在蓝宝石衬底上的发光结构; 在p型氮化物半导体层上形成p电极; 在p电极上形成结构支撑层; 通过LLO（激光剥离）工艺去除蓝宝石衬底; 通过ISO（隔离）工艺将发光结构隔离成单元LED元件; 以及在隔离的发光结构的n型氮化物半导体层的每一个上形成n电极。

5. 发明申请

US20080237622A1 Light emitting device and package having the same 有权
标题翻译：发光器件和封装具有相同的功能
公开(公告)号：US20080237622A1
公开(公告)日：2008-10-02
申请号：US12071980
申请日：2008-02-28
申请人： Pun Jae Choi , Jin Hyun Lee , Si Hyuk Lee , Seon Young Myoung , Ki Yeol Park
发明人： Pun Jae Choi , Jin Hyun Lee , Si Hyuk Lee , Seon Young Myoung , Ki Yeol Park
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/0079 , H01L33/08 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2924/01079 , H01L2924/00014 , H01L2924/00
摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.
摘要翻译：提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产。根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

6. 发明申请

US20080135859A1 Vertical structure led device and method of manufacturing the same 有权
标题翻译：垂直结构led器件及其制造方法
公开(公告)号：US20080135859A1
公开(公告)日：2008-06-12
申请号：US11987712
申请日：2007-12-04
申请人： Myong Soo Cho , Ki Yeol Park , Sang Yeob Song , Si Hyuk Lee , Pun Jae Choi
发明人： Myong Soo Cho , Ki Yeol Park , Sang Yeob Song , Si Hyuk Lee , Pun Jae Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/0079
摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.
摘要翻译：一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层成长将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来金属接合层与接合界面接触。

7. 发明授权

US08110424B2 Surface treatment method of group III nitride semiconductor and manufacturing method of the group III nitride semiconductor 有权
标题翻译： III族氮化物半导体的表面处理方法和III族氮化物半导体的制造方法
公开(公告)号：US08110424B2
公开(公告)日：2012-02-07
申请号：US12419590
申请日：2009-04-07
申请人： Jong In Yang , Sang Bum Lee , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
发明人： Jong In Yang , Sang Bum Lee , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/268 , H01L33/0062 , H01L33/16
摘要： There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.
摘要翻译：提供了一种III族氮化物半导体的表面处理方法，包括：提供包括III族极性的第一表面和与第一表面相对的具有氮极性的第二表面的III族氮化物半导体; 并且将激光束照射到第二表面上以将第二表面的氮极性改变为III族极性。

8. 发明授权

US08110417B2 Method of forming pattern on group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor light emitting device 有权
标题翻译：在III族氮化物半导体衬底上形成图案的方法和制造III族氮化物半导体发光器件的方法
公开(公告)号：US08110417B2
公开(公告)日：2012-02-07
申请号：US12885882
申请日：2010-09-20
申请人： Jong In Yang , Yu Seung Kim , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
发明人： Jong In Yang , Yu Seung Kim , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/3086 , H01L21/30612 , H01L33/0079 , H01L33/0095 , H01L33/22 , H01L33/32
摘要： There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.
摘要翻译：提供了在III族氮化物半导体衬底上形成图案的方法。根据本发明的一个方面的在III族氮化物半导体衬底上形成图案的方法可以包括：将激光束照射到至少一个第一区域以防止III族氮化物半导体衬底中的蚀刻; 以及使用被激光束照射的第一区域作为掩模，蚀刻除了第一区域之外的至少一个第二区域。

9. 发明授权

US07816284B2 Method of forming pattern on group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor light emitting device 有权
标题翻译：在III族氮化物半导体衬底上形成图案的方法和制造III族氮化物半导体发光器件的方法
公开(公告)号：US07816284B2
公开(公告)日：2010-10-19
申请号：US12429458
申请日：2009-04-24
申请人： Jong In Yang , Yu Seung Kim , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
发明人： Jong In Yang , Yu Seung Kim , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/3086 , H01L21/30612 , H01L33/0079 , H01L33/0095 , H01L33/22 , H01L33/32
摘要： There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.
摘要翻译：提供了在III族氮化物半导体衬底上形成图案的方法。根据本发明的一个方面的在III族氮化物半导体衬底上形成图案的方法可以包括：将激光束照射到至少一个第一区域以防止III族氮化物半导体衬底中的蚀刻; 以及使用被激光束照射的第一区域作为掩模，蚀刻除了第一区域之外的至少一个第二区域。

10. 发明授权

US07786498B2 Light emitting device and package having the same 有权
标题翻译：发光器件和封装具有相同的功能
公开(公告)号：US07786498B2
公开(公告)日：2010-08-31
申请号：US12071980
申请日：2008-02-28
申请人： Pun Jae Choi , Jin Hyun Lee , Si Hyuk Lee , Seon Young Myoung , Ki Yeol Park
发明人： Pun Jae Choi , Jin Hyun Lee , Si Hyuk Lee , Seon Young Myoung , Ki Yeol Park
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/0079 , H01L33/08 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2924/01079 , H01L2924/00014 , H01L2924/00
摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.
摘要翻译：提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产。根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

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