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1. 发明申请

US20130029445A1 METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20130029445A1
公开(公告)日：2013-01-31
申请号：US13558051
申请日：2012-07-25
申请人： Gi Bum KIM , Won Goo HUR , Seung Woo CHOI , Seung Jae LEE , Si Hyuk LEE , Tae Hun KIM
发明人： Gi Bum KIM , Won Goo HUR , Seung Woo CHOI , Seung Jae LEE , Si Hyuk LEE , Tae Hun KIM
IPC分类号： H01L33/02
CPC分类号： H01L33/007 , H01L33/0095 , H01L33/20
摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: preparing a substrate including first and second main surfaces opposing each other; forming a plurality of protruding parts in the first main surface of the substrate; forming a light emitting stack on the first main surface on which the plurality of protruding parts are formed; forming a plurality of light emitting structures by removing portions of the light emitting stack formed in regions corresponding to groove parts around the plurality of protruding parts; and separating the substrate along the groove parts.
摘要翻译：提供一种制造半导体发光器件的方法，该方法包括：制备包括彼此相对的第一和第二主表面的衬底; 在基板的第一主表面上形成多个突出部分; 在形成有所述多个突出部的所述第一主表面上形成发光层; 通过去除形成在与所述多个突出部分周围的槽部分相对应的区域中的所述发光堆叠的部分来形成多个发光结构; 以及沿着所述凹槽部分分离所述基底。

2. 发明申请

US20120107987A1 METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20120107987A1
公开(公告)日：2012-05-03
申请号：US13286834
申请日：2011-11-01
申请人： Won Goo HUR , Young Chul SHIN , Gi Bum KIM , Seung Woo CHOI
发明人： Won Goo HUR , Young Chul SHIN , Gi Bum KIM , Seung Woo CHOI
IPC分类号： H01L33/02
CPC分类号： H01L33/42 , H01L33/025 , H01L2933/0016
摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: forming a light emitting structure by sequentially growing an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a transparent electrode on the p-type nitride semiconductor layer through a sputtering process; and forming a nitrogen gas atmosphere in an interior of a reaction chamber in which the sputtering process is performed, prior to or during the sputtering process.In the case of the semiconductor light emitting device obtained according to embodiments of the invention, a deterioration phenomenon in electrode characteristics caused due to a nitrogen vacancy may be minimized in manufacturing a transparent electrode through a sputtering process to thereby allow for the provision of a transparent electrode having significantly improved electrical characteristics.
摘要翻译：提供一种制造半导体发光器件的方法，该方法包括：通过在衬底上依次生长n型氮化物半导体层，有源层和p型氮化物半导体层来形成发光结构; 通过溅射法在p型氮化物半导体层上形成透明电极; 以及在溅射工艺之前或期间在其中进行溅射工艺的反应室的内部形成氮气气氛。在根据本发明的实施例获得的半导体发光器件的情况下，由于氮空位引起的电极特性的劣化现象在通过溅射工艺制造透明电极时可能被最小化，从而允许提供透明电极具有显着改善的电特性。

3. 发明申请

US20120025246A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120025246A1
公开(公告)日：2012-02-02
申请号：US13167396
申请日：2011-06-23
申请人： Tae Hun KIM , Gi Bum KIM , Won Goo HUR , Young Sun KIM , Ki Sung KIM
发明人： Tae Hun KIM , Gi Bum KIM , Won Goo HUR , Young Sun KIM , Ki Sung KIM
IPC分类号： H01L33/58 , B82Y40/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L2933/0091
摘要： Disclosed are a semiconductor light emitting device and a method of manufacturing the same. The method includes providing a substrate having first and second main surfaces opposing each other and forming a first uneven structure in the first main surface, forming a sacrificial layer on the first main surface of the substrate, forming a mask having open regions on the sacrificial layer so as to expose a portion of an upper surface of the sacrificial layer, forming a second uneven structure in the substrate by etching the sacrificial layer and the substrate through the open regions, removing the sacrificial layer and the mask from the substrate, and forming a light emitting stack on the first and second uneven structures of the substrate.
摘要翻译：公开了一种半导体发光器件及其制造方法。该方法包括提供具有彼此相对的第一和第二主表面的衬底，并且在第一主表面中形成第一不平坦结构，在衬底的第一主表面上形成牺牲层，在牺牲层上形成具有开放区域的掩模以便暴露牺牲层的上表面的一部分，通过通过开放区域蚀刻牺牲层和衬底，在衬底中形成第二不均匀结构，从衬底去除牺牲层和掩模，并形成发光堆叠在基板的第一和第二不平坦结构上。

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