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1. 发明授权

US07015136B2 Method for preventing formation of photoresist scum 有权
标题翻译：防止光刻胶浮渣形成的方法
公开(公告)号：US07015136B2
公开(公告)日：2006-03-21
申请号：US10618219
申请日：2003-07-10
申请人： Tien-I Bao , Shwang-Min Jeng , Syun-Ming Jang
发明人： Tien-I Bao , Shwang-Min Jeng , Syun-Ming Jang
IPC分类号： H01L21/302
CPC分类号： G03F7/091 , Y10S438/95
摘要： A method for preventing formation of photoresist scum. First, a substrate on which a dielectric layer is formed is provided. Next, a non-nitrogen anti-reflective layer is formed on the dielectric layer. Finally, a photoresist pattern layer is formed on the non-nitrogen anti-reflective layer. During the formation of the photoresist pattern layer, the non-nitrogen anti-reflective layer does not react with the photoresist pattern layer, thus not forming photoresist scum. This prevents undesired etching profile and critical dimension (CD) change due to presence of photoresist scum. The non-nitrogen anti-reflective layer can be silicon-rich oxide (SiOx) or hydrocarbon-containing silicon-rich oxide (SiOxCy:H).
摘要翻译：防止光刻胶浮渣形成的方法。首先，提供形成介电层的基板。接下来，在电介质层上形成非氮抗反射层。最后，在非氮抗反射层上形成光刻胶图形层。在形成光致抗蚀剂图案层期间，非氮抗反射层不与光致抗蚀剂图案层反应，因此不形成光致抗蚀剂浮渣。这防止由于存在光致抗蚀剂浮渣而引起的不期望的蚀刻轮廓和临界尺寸（CD）变化。非氮抗反射层可以是富氧氧化物（SiO 2）或含烃的富含氧的氧化物（SiO x x C y） SUB>：H）。

2. 发明申请

US20050064629A1 Tungsten-copper interconnect and method for fabricating the same 审中-公开
标题翻译：钨铜互连及其制造方法
公开(公告)号：US20050064629A1
公开(公告)日：2005-03-24
申请号：US10665309
申请日：2003-09-22
申请人： Chen-Hua Yu , Tsu Shih , Chung-Shi Liu , Shwang-Min Jeng , Horng-Huei Tseng
发明人： Chen-Hua Yu , Tsu Shih , Chung-Shi Liu , Shwang-Min Jeng , Horng-Huei Tseng
IPC分类号： H01L21/768 , H01L21/44
CPC分类号： H01L21/76829 , H01L21/76834
摘要： An interconnect structure utilizing a silicon carbon-containing film as an interlayer between dielectrics. A semiconductor substrate having a conductor thereon is provided, and an insulating layer overlies the semiconductor substrate. The insulating layer has a via hole therein to expose the conductor. A conductive plug, e.g. a tungsten plug, substantially fills the via hole and electrically connects the underlying conductor. A silicon carbon-containing film and a low k dielectric layer overlie the insulating layer and the conductive plug, and have a trench therein exposing the conductive plug. A copper or copper alloy conductor substantially fills the trench.
摘要翻译：利用含硅碳膜作为电介质之间的中间层的互连结构。设置有其上具有导体的半导体衬底，并且绝缘层覆盖在半导体衬底上。绝缘层在其中具有通孔以露出导体。导电塞，例如。钨插头基本上填充通孔并电连接下面的导体。含硅碳膜和低k电介质层覆盖在绝缘层和导电插塞上，并且在其中具有暴露导电插塞的沟槽。铜或铜合金导体基本上填充沟槽。

3. 发明申请

US20050006340A1 Method for preventing formation of photoresist scum 有权
标题翻译：防止光刻胶浮渣形成的方法
公开(公告)号：US20050006340A1
公开(公告)日：2005-01-13
申请号：US10618219
申请日：2003-07-10
申请人： Tien-I Bao , Shwang-Min Jeng , Syun-Ming Jang
发明人： Tien-I Bao , Shwang-Min Jeng , Syun-Ming Jang
IPC分类号： C23F1/00 , G03F7/09
CPC分类号： G03F7/091 , Y10S438/95
摘要： A method for preventing formation of photoresist scum. First, a substrate on which a dielectric layer is formed is provided. Next, a non-nitrogen anti-reflective layer is formed on the dielectric layer. Finally, a photoresist pattern layer is formed on the non-nitrogen anti-reflective layer. During the formation of the photoresist pattern layer, the non-nitrogen anti-reflective layer does not react with the photoresist pattern layer, thus not forming photoresist scum. This prevents undesired etching profile and critical dimension (CD) change due to presence of photoresist scum. The non-nitrogen anti-reflective layer can be silicon-rich oxide (SiOx) or hydrocarbon-containing silicon-rich oxide (SiOxCy:H).
摘要翻译：防止光刻胶浮渣形成的方法。首先，提供形成介电层的基板。接下来，在电介质层上形成非氮抗反射层。最后，在非氮抗反射层上形成光刻胶图形层。在形成光致抗蚀剂图案层期间，非氮抗反射层不与光致抗蚀剂图案层反应，因此不形成光致抗蚀剂浮渣。这防止由于存在光致抗蚀剂浮渣而引起的不期望的蚀刻轮廓和临界尺寸（CD）变化。非氮抗反射层可以是富氧氧化物（SiOx）或含烃富氧氧化物（SiO x C y：H）。

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