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    • 2. 发明申请
    • COMPOUND SEMICONDUCTOR DEPOSITION METHOD AND APPARATUS
    • 化合物半导体沉积方法和装置
    • US20120058627A1
    • 2012-03-08
    • US13266337
    • 2010-04-28
    • Motoichi OhtsuTadashi KawazoeShunsuke YamazakiKoichi KajiyamaMichinobu MizumuraKeiichi Ito
    • Motoichi OhtsuTadashi KawazoeShunsuke YamazakiKoichi KajiyamaMichinobu MizumuraKeiichi Ito
    • H01L21/20B05C9/08
    • C23C16/481C23C14/548C23C16/303C23C16/52C30B25/00C30B29/403H01L21/0237H01L21/0242H01L21/0254H01L21/0262H01L33/0062
    • Provided is a compound semiconductor deposition method of adjusting the luminous wavelength of a compound semiconductor of a ternary or higher system in a nanometer order in depositing the compound semiconductor on a substrate. In the compound semiconductor deposition method of depositing a compound semiconductor of a ternary or higher system on a substrate, propagation light of a smaller energy than a desired ideal excitation energy for the compound semiconductor is irradiated onto the substrate 13 while depositing the compound semiconductor on the substrate 13, near-field light is generated based on the irradiated propagation light from fine particles of the compound semiconductor deposited on the substrate 13, new vibrational levels for the compound semiconductor are formed in multiple stages based on the generated near-field light, and a component in the compound semiconductor corresponding to the excitation energy is excited with the propagation light through a vibrational level, among the new vibrational levels, which has an excitation energy equal to or smaller than the energy of the propagation light is excited to desorb the component.
    • 提供一种在将化合物半导体沉积在基板上时以纳米级调节三元或更高系统的化合物半导体的发光波长的化合物半导体沉积方法。 在将三元或更高系统的化合物半导体沉积在衬底上的化合物半导体沉积方法中,将化合物半导体所需的理想激发能的能量较小的传播光照射到衬底13上,同时将化合物半导体沉积在 基板13,基于沉积在基板13上的化合物半导体的微粒的照射的传播光产生近场光,基于产生的近场光,以多个阶段形成化合物半导体的新的振动电平,以及 对应于激发能的化合物半导体中的成分被传播光激发,通过振动水平,激发能量等于或小于传播光的能量的新的振动水平被激发,从而解吸部件 。