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1. 发明授权

US07578889B2 Methodology for cleaning of surface metal contamination from electrode assemblies 有权
标题翻译：清洁电极组件表面金属污染的方法
公开(公告)号：US07578889B2
公开(公告)日：2009-08-25
申请号：US11730300
申请日：2007-03-30
申请人： Hong Shih , Yaobo Yin , Shun Jackson Wu , Armen Avoyan , John E. Daugherty , Linda Jiang
发明人： Hong Shih , Yaobo Yin , Shun Jackson Wu , Armen Avoyan , John E. Daugherty , Linda Jiang
IPC分类号： B08B3/04
CPC分类号： B08B3/08 , B08B3/12 , H01J37/32862 , H01L21/67051 , H01L21/67069
摘要： Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.
摘要翻译：系统和有效的清洁电容耦合等离子体反应堆电极的方法，并降低表面粗糙度，从而提高清洁电极满足表面污染规格和制造产量。对清洁过程中使用的工具进行预清洁有助于防止被清洁电极的污染。

2. 发明申请

US20080213496A1 Method of coating semiconductor processing apparatus with protective yttrium-containing coatings 审中-公开
标题翻译：用保护性钇涂层涂覆半导体处理装置的方法
公开(公告)号：US20080213496A1
公开(公告)日：2008-09-04
申请号：US11890221
申请日：2007-08-02
申请人： Jennifer Y. Sun , Shun Jackson Wu , Senh Thach , Ananda Kumar , Robert W. Wu , Hong Wang , Yixing Lin , Clifford C. Stow , Jim Dempster , Li Xu , Kenneth S. Collins , Ren-Guan Duan , Thomas Graves , Xiaoming He , Jie Yuan
发明人： Jennifer Y. Sun , Shun Jackson Wu , Senh Thach , Ananda Kumar , Robert W. Wu , Hong Wang , Yixing Lin , Clifford C. Stow , Jim Dempster , Li Xu , Kenneth S. Collins , Ren-Guan Duan , Thomas Graves , Xiaoming He , Jie Yuan
IPC分类号： C23C4/10 , C23C14/34
CPC分类号： C23C28/042 , C23C4/11 , C23C4/18 , C23C16/4404
摘要： Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas. The specialty ceramic materials contain at least one yttrium oxide-comprising solid solution. Some embodiments of the specialty ceramic materials have been modified to provide a resistivity which reduces the possibility of arcing within a semiconductor processing chamber.
摘要翻译：将特种陶瓷材料应用于半导体加工设备的方法，其中特种陶瓷材料耐卤素等离子体。特种陶瓷材料含有至少一种含氧化钇的固溶体。已经修改了特种陶瓷材料的一些实施例以提供降低半导体处理室内的电弧的可能性的电阻率。

3. 发明授权

US07055732B2 Semiconductor processing apparatus including plasma-resistant, welded aluminum structures 失效
标题翻译：半导体处理装置包括耐等离子体，焊接铝结构
公开(公告)号：US07055732B2
公开(公告)日：2006-06-06
申请号：US10652663
申请日：2003-08-28
申请人： Senh Thach , Jennifer Y. Sun , Shun Jackson Wu , Yixing Lin , Clifford C. Stow
发明人： Senh Thach , Jennifer Y. Sun , Shun Jackson Wu , Yixing Lin , Clifford C. Stow
IPC分类号： B23K20/12 , B23K37/00 , B23K31/02
CPC分类号： B23K20/24 , B23K20/12 , B23K20/129 , B23K20/2336 , B23K2101/40 , B23K2103/10 , Y10T428/12736
摘要： We have discovered a method of producing a complex-shaped aluminum alloy article, where welding has been employed to form the article, where an anodized aluminum coating is produced over a surface of the article including the weld joint, and where the anodized aluminum coating is uniform, providing improved performance over that previously known in the art for welded articles exposed to a corrosive plasma environment.
摘要翻译：我们已经发现了一种生产复合形状的铝合金制品的方法，其中已经使用焊接来形成制品，其中在包括焊接接头的制品的表面上产生阳极氧化的铝涂层，并且其中阳极氧化的铝涂层与现有技术中已知的用于暴露于腐蚀性等离子体环境的焊接制品相比提供了更好的性能。

4. 发明授权

US07048814B2 Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus 有权
公开(公告)号：US07048814B2
公开(公告)日：2006-05-23
申请号：US10071869
申请日：2002-02-08
申请人： Yixing Lin , Brian T. West , Hong Wang , Shun Jackson Wu , Jennifer Y Sun , Clifford C. Stow , Senh Thach
发明人： Yixing Lin , Brian T. West , Hong Wang , Shun Jackson Wu , Jennifer Y Sun , Clifford C. Stow , Senh Thach
IPC分类号： C25D3/04
CPC分类号： C25D11/16 , C25D11/04 , C25D11/045
摘要： We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film can be controlled by maintaining the content of mobile impurities within a specific range and controlling the particulate size and distribution of the mobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330° C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.

5. 发明授权

US07033447B2 Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus 失效
标题翻译：用于半导体加工设备的耐卤化阳极氧化铝
公开(公告)号：US07033447B2
公开(公告)日：2006-04-25
申请号：US10137782
申请日：2002-05-03
申请人： Yixing Lin , Brian T West , Shun Jackson Wu , Clifford C Stow , Senh Thach , Hong Wang , Jennifer Y Sun
发明人： Yixing Lin , Brian T West , Shun Jackson Wu , Clifford C Stow , Senh Thach , Hong Wang , Jennifer Y Sun
IPC分类号： C22C21/06
CPC分类号： C25D11/04 , C22C21/06 , C25D11/045 , C25D11/06 , C25D11/16
摘要： We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film, can be controlled by maintaining the content of mobile and nonmobile impurities within a specific range and controlling the particulate size and distribution of the mobile and nonmobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330° C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.
摘要翻译：我们已经发现，通过将移动和非移动杂质的含量保持在内，在铝合金制品的表面上形成颗粒夹杂物，其中夹杂物干扰从合金表面到上覆的氧化铝保护膜的平滑过渡特定范围并控制流动和非流动杂质及其化合物的颗粒尺寸和分布; 通过在低于约330℃的温度下对铝合金进行热处理; 并通过使用特定的电解工艺制备氧化铝保护膜。当考虑这些因素时，获得改进的氧化铝保护膜。

6. 发明申请

US20080236620A1 Methodology for cleaning of surface metal contamination from electrode assemblies 有权
标题翻译：清洁电极组件表面金属污染的方法
公开(公告)号：US20080236620A1
公开(公告)日：2008-10-02
申请号：US11730300
申请日：2007-03-30
申请人： Hong Shih , Yaobo Yin , Shun Jackson Wu , Armen Avoyan , John E. Daugherty , Linda Jiang
发明人： Hong Shih , Yaobo Yin , Shun Jackson Wu , Armen Avoyan , John E. Daugherty , Linda Jiang
IPC分类号： B08B3/04
CPC分类号： B08B3/08 , B08B3/12 , H01J37/32862 , H01L21/67051 , H01L21/67069
摘要： Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.
摘要翻译：系统和有效的清洁电容耦合等离子体反应堆电极的方法，并降低表面粗糙度，从而提高清洁电极满足表面污染规格和制造产量。对清洁过程中使用的工具进行预清洁有助于防止被清洁电极的污染。

7. 发明授权

US06776873B1 Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers 有权
标题翻译：用于半导体IC处理真空室的氧化钇基表面涂层
公开(公告)号：US06776873B1
公开(公告)日：2004-08-17
申请号：US10075967
申请日：2002-02-14
申请人： Jennifer Y Sun , Shun Jackson Wu , Senh Thach , Ananda H Kumar , Robert W Wu , Hong Wang , Yixing Lin , Clifford C Stow
发明人： Jennifer Y Sun , Shun Jackson Wu , Senh Thach , Ananda H Kumar , Robert W Wu , Hong Wang , Yixing Lin , Clifford C Stow
IPC分类号： C23F100
CPC分类号： C23C28/00 , C23C16/4404
摘要： To further enhance the chamber material performance of anodized aluminum alloy materials against fluorine and oxygen plasma attack, a ceramic-based surface coating, high purity yttrium oxide coating, is provided on the anodized aluminum alloy parts.
摘要翻译：为了进一步提高阳极氧化铝合金材料对氟和氧等离子体侵蚀的室内材料性能，在阳极氧化铝合金部件上提供陶瓷基表面涂层，高纯度氧化钇涂层。

8. 发明授权

US06659331B2 Plasma-resistant, welded aluminum structures for use in semiconductor apparatus 失效
标题翻译：用于半导体设备的等离子体焊接铝结构
公开(公告)号：US06659331B2
公开(公告)日：2003-12-09
申请号：US10086003
申请日：2002-02-26
申请人： Senh Thach , Jennifer Y. Sun , Shun Jackson Wu , Yixing Lin , Clifford C. Stow
发明人： Senh Thach , Jennifer Y. Sun , Shun Jackson Wu , Yixing Lin , Clifford C. Stow
IPC分类号： B23K3102
CPC分类号： B23K20/24 , B23K20/12 , B23K20/129 , B23K20/2336 , B23K2101/40 , B23K2103/10 , Y10T428/12736
摘要： We have discovered a method of producing a complex-shaped aluminum alloy article, where welding has been employed to form the article, where an anodized aluminum coating is produced over a surface of the article including the weld joint, and where the anodized aluminum coating is uniform, providing improved performance over that previously known in the art for welded articles exposed to a corrosive plasma environment.
摘要翻译：我们已经发现了一种生产复合形状的铝合金制品的方法，其中已经使用焊接来形成制品，其中在包括焊接接头的制品的表面上产生阳极氧化的铝涂层，并且其中阳极氧化的铝涂层是与现有技术中已知的用于暴露于腐蚀性等离子体环境的焊接制品相比提供了更好的性能。

9. 发明授权

US06175485B1 Electrostatic chuck and method for fabricating the same 失效
标题翻译：静电吸盘及其制造方法
公开(公告)号：US06175485B1
公开(公告)日：2001-01-16
申请号：US08684113
申请日：1996-07-19
申请人： Padmanabhan Krishnaraj , Brian Lue , Ramkishan Rao Lingampalli , Shun Jackson Wu
发明人： Padmanabhan Krishnaraj , Brian Lue , Ramkishan Rao Lingampalli , Shun Jackson Wu
IPC分类号： H02N1300
CPC分类号： H02N13/00 , Y10T279/23
摘要： The present invention provides an electrostatic chuck having a dielectric layer with improved porosity and electrical properties, and a method for fabricating the dielectric layer and applying the layer to a pedestal to form a portion of an electrostatic chuck. The dielectric layer is formed by a detonation gun process which includes igniting a fuel gas mixture to form a detonation wave and propelling aluminum oxide powder onto the pedestal at high speeds. The dielectric layer has a porosity of less than 1 percent of its total volume, which improves the electrical properties of the chuck, such as its dielectric strength and the dielectric constant. In addition, the low porosity decreases the adsorption of moisture and other gases into the dielectric layer, which further enhances the electrical properties of the chuck.
摘要翻译：本发明提供一种静电卡盘，其具有提高孔隙率和电性能的电介质层，以及用于制造电介质层并将该层施加到基座以形成静电卡盘的一部分的方法。电介质层通过爆震枪工艺形成，其中包括点燃燃料气体混合物以形成爆震波，并将氧化铝粉末以高速推进到基座上。电介质层的孔隙率小于其总体积的1％，这改善了卡盘的电性能，例如其介电强度和介电常数。此外，低孔隙率降低了水分和其他气体吸附到电介质层中，这进一步增强了卡盘的电性能。

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