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1. 发明申请

US20080246143A1 EMBEDDED METAL HEAT SINK FOR SEMICONDUCTOR 有权
标题翻译：嵌入金属热电偶用于半导体
公开(公告)号：US20080246143A1
公开(公告)日：2008-10-09
申请号：US12136519
申请日：2008-06-10
申请人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin , Jin-Quan Huang , Shu-Kai Hu
发明人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin , Jin-Quan Huang , Shu-Kai Hu
IPC分类号： H01L23/36
CPC分类号： H01L33/641 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/49107 , H01L2924/01078 , H01L2924/01079 , H01S5/0226 , H01S5/02276 , H01S5/02469 , H01L2924/00014
摘要： An embedded metal heat sink for a semiconductor device is described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.
摘要翻译：描述了一种用于半导体器件的嵌入式金属散热器。用于半导体器件的嵌入式金属散热器包括金属薄层，金属散热器和两个接合焊盘。所述金属薄层包括相对侧的第一表面和第二表面，其中至少一个半导体器件嵌入在所述金属薄层的第一表面中，并且所述半导体器件具有两个具有不同导电类型的电极。金属散热器沉积在金属薄层的第二表面上。接合焊盘被放置在半导体器件周围的金属薄层的第一表面上，并且分别对应于电极，其中电极通过至少两根电线电连接并分别连接到相应的焊盘，并且焊盘是电连接到外部电路。

2. 发明申请

US20070121327A1 Light-emitting device and process for manufacturing the same 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20070121327A1
公开(公告)日：2007-05-31
申请号：US11429609
申请日：2006-05-05
申请人： Guan-Qun Chen , Chun-Liang Lin , Shu-Kai Hu , Jin-Quan Huang
发明人： Guan-Qun Chen , Chun-Liang Lin , Shu-Kai Hu , Jin-Quan Huang
IPC分类号： F21V29/00
CPC分类号： H01L33/641 , H01L2933/0075
摘要： A light-emitting device and a process for manufacturing the same are described. The light-emitting device comprises: a thin metal layer including a first surface and a second surface on opposite sides; a metal heat sink directly formed and closely connected to the second surface of the thin metal layer; and a light-emitting chip deposed on a portion of the first surface of the thin metal layer, wherein the thin metal layer directly contacts and is closely connected with the light-emitting chip.
摘要翻译：对发光装置及其制造方法进行说明。发光装置包括：薄金属层，包括在相对侧上的第一表面和第二表面; 金属散热片直接形成并紧密连接到薄金属层的第二表面; 以及设置在所述薄金属层的所述第一表面的一部分上的发光芯片，其中所述薄金属层直接接触并与所述发光芯片紧密连接。

3. 发明授权

US07452755B2 Embedded metal heat sink for semiconductor device and method for manufacturing the same 有权
标题翻译：用于半导体器件的嵌入式金属散热器及其制造方法
公开(公告)号：US07452755B2
公开(公告)日：2008-11-18
申请号：US11470279
申请日：2006-09-06
申请人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin , Jin-Quan Huang , Shu-Kai Hu
发明人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin , Jin-Quan Huang , Shu-Kai Hu
IPC分类号： H01L21/44 , H01L21/48
CPC分类号： H01L33/641 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/49107 , H01L2924/01078 , H01L2924/01079 , H01S5/0226 , H01S5/02276 , H01S5/02469 , H01L2924/00014
摘要： An embedded metal heat sink for a semiconductor device and a method for manufacturing the same are described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.
摘要翻译：描述了一种用于半导体器件的嵌入式金属散热器及其制造方法。用于半导体器件的嵌入式金属散热器包括金属薄层，金属散热器和两个接合焊盘。所述金属薄层包括相对侧的第一表面和第二表面，其中至少一个半导体器件嵌入在所述金属薄层的第一表面中，并且所述半导体器件具有两个具有不同导电类型的电极。金属散热器沉积在金属薄层的第二表面上。接合焊盘被放置在半导体器件周围的金属薄层的第一表面上，并且分别对应于电极，其中电极通过至少两根电线电连接并分别连接到相应的焊盘，并且焊盘是电连接到外部电路。

4. 发明授权

US07723829B2 Embedded metal heat sink for semiconductor 有权
标题翻译：半导体嵌入式金属散热片
公开(公告)号：US07723829B2
公开(公告)日：2010-05-25
申请号：US12136519
申请日：2008-06-10
申请人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin , Jin-Quan Huang , Shu-Kai Hu
发明人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin , Jin-Quan Huang , Shu-Kai Hu
IPC分类号： H01L23/495
CPC分类号： H01L33/641 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/49107 , H01L2924/01078 , H01L2924/01079 , H01S5/0226 , H01S5/02276 , H01S5/02469 , H01L2924/00014
摘要： An embedded metal heat sink for a semiconductor device is described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.
摘要翻译：描述了一种用于半导体器件的嵌入式金属散热器。用于半导体器件的嵌入式金属散热器包括金属薄层，金属散热器和两个接合焊盘。所述金属薄层包括相对侧的第一表面和第二表面，其中至少一个半导体器件嵌入在所述金属薄层的第一表面中，并且所述半导体器件具有两个具有不同导电类型的电极。金属散热器沉积在金属薄层的第二表面上。接合焊盘被放置在半导体器件周围的金属薄层的第一表面上，并且分别对应于电极，其中电极通过至少两根电线电连接并分别连接到相应的焊盘，并且焊盘是电连接到外部电路。

5. 发明申请

US20070296074A1 Embedded Metal Heat Sink for Semiconductor Device and Method for Manufacturing the Same 有权
标题翻译：用于半导体器件的嵌入式金属散热器及其制造方法
公开(公告)号：US20070296074A1
公开(公告)日：2007-12-27
申请号：US11470279
申请日：2006-09-06
申请人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin , Jin-Quan Huang , Shu-Kai Hu
发明人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin , Jin-Quan Huang , Shu-Kai Hu
IPC分类号： H01L23/34
CPC分类号： H01L33/641 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/49107 , H01L2924/01078 , H01L2924/01079 , H01S5/0226 , H01S5/02276 , H01S5/02469 , H01L2924/00014
摘要： An embedded metal heat sink for a semiconductor device and a method for manufacturing the same are described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.
摘要翻译：描述了一种用于半导体器件的嵌入式金属散热器及其制造方法。用于半导体器件的嵌入式金属散热器包括金属薄层，金属散热器和两个接合焊盘。所述金属薄层包括相对侧的第一表面和第二表面，其中至少一个半导体器件嵌入在所述金属薄层的第一表面中，并且所述半导体器件具有两个具有不同导电类型的电极。金属散热器沉积在金属薄层的第二表面上。接合焊盘被放置在半导体器件周围的金属薄层的第一表面上，并且分别对应于电极，其中电极通过至少两根电线电连接并分别连接到相应的焊盘，并且焊盘是电连接到外部电路。

6. 发明授权

US07387915B2 Method for manufacturing heat sink of semiconductor device 有权
标题翻译：制造半导体器件散热片的方法
公开(公告)号：US07387915B2
公开(公告)日：2008-06-17
申请号：US11470273
申请日：2006-09-06
申请人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin , Jin-Quan Huang , Shu-Kai Hu
发明人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin , Jin-Quan Huang , Shu-Kai Hu
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/641 , H01S5/02256 , H01S5/02272 , H01S5/024 , H01S5/02476 , H01S5/4093
摘要： A method for manufacturing a heat sink of a semiconductor device is described. In the method, an adhesive tape is provided, wherein the adhesive tape includes a first surface and a second surface on opposite sides, and the first surface of the adhesive tape adheres to a surface of a temporary substrate. At least one semiconductor device is provided, wherein the semiconductor device includes a first side and a second side opposite to the first side, and the first side of the one semiconductor device is pressed and set into a portion of the second surface of the adhesive tape, and the second side of the one semiconductor device is exposed. A thin metal layer is formed on the second side of the semiconductor device and the exposed portion of the second surface of the adhesive tape. A metal heat sink is formed on the thin metal layer. Then, the adhesive tape and the temporary substrate are removed.
摘要翻译：描述了制造半导体器件的散热器的方法。在该方法中，提供了一种粘合带，其中胶带包括第一表面和相对侧上的第二表面，并且粘合带的第一表面粘附到临时基底的表面。提供至少一个半导体器件，其中半导体器件包括与第一侧相对的第一侧和第二侧，并且一个半导体器件的第一侧被压入并设置在粘合带的第二表面的一部分中并且暴露一个半导体器件的第二面。在半导体器件的第二侧和胶带的第二表面的暴露部分上形成薄金属层。在薄金属层上形成金属散热器。然后，去除胶带和临时基板。

7. 发明申请

US20070298543A1 Method for Manufacturing Heat Sink of Semiconductor Device 有权
标题翻译：半导体器件散热片制造方法
公开(公告)号：US20070298543A1
公开(公告)日：2007-12-27
申请号：US11470273
申请日：2006-09-06
申请人： Yan-Kuin SU , Kuan-Chun CHEN , Chun-Liang LIN , Jin-Quan HUANG , Shu-Kai HU
发明人： Yan-Kuin SU , Kuan-Chun CHEN , Chun-Liang LIN , Jin-Quan HUANG , Shu-Kai HU
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/641 , H01S5/02256 , H01S5/02272 , H01S5/024 , H01S5/02476 , H01S5/4093
摘要： A method for manufacturing a heat sink of a semiconductor device is described. In the method, an adhesive tape is provided, wherein the adhesive tape includes a first surface and a second surface on opposite sides, and the first surface of the adhesive tape adheres to a surface of a temporary substrate. At least one semiconductor device is provided, wherein the semiconductor device includes a first side and a second side opposite to the first side, and the first side of the one semiconductor device is pressed and set into a portion of the second surface of the adhesive tape, and the second side of the one semiconductor device is exposed. A thin metal layer is formed on the second side of the semiconductor device and the exposed portion of the second surface of the adhesive tape. A metal heat sink is formed on the thin metal layer. Then, the adhesive tape and the temporary substrate are removed.
摘要翻译：描述了制造半导体器件的散热器的方法。在该方法中，提供了一种粘合带，其中胶带包括第一表面和相对侧上的第二表面，并且粘合带的第一表面粘附到临时基底的表面。提供至少一个半导体器件，其中半导体器件包括与第一侧相对的第一侧和第二侧，并且一个半导体器件的第一侧被压入并设置在粘合带的第二表面的一部分中并且暴露一个半导体器件的第二面。在半导体器件的第二侧和胶带的第二表面的暴露部分上形成薄金属层。在薄金属层上形成金属散热器。然后，去除胶带和临时基板。

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