专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130256063A1 LUBRICATING DEVICE FOR LINEAR TRANSMISSION MECHANISM 有权
标题翻译：线性传动机构润滑装置
公开(公告)号：US20130256063A1
公开(公告)日：2013-10-03
申请号：US13435999
申请日：2012-03-30
申请人： Kuan-Chun CHEN , Wu-Teng Hsieh
发明人： Kuan-Chun CHEN , Wu-Teng Hsieh
IPC分类号： F16N11/08
CPC分类号： F16N11/08
摘要： A lubricating device used in a linear transmission mechanism is disclosed to include a housing having an accommodation chamber and an opening formed on the inside and periphery thereof in equal cross section, a pressure member axially movable in the accommodation chamber, a screw rod pivotally mounted in the housing and having a first transmission portion located on one end thereof and extended out of the pressure member, a screw nut threaded onto the screw rod and driven by the screw rod to stop against the pressure member outside, a transmission member defining therein a transmission slot and a second transmission portion and a third transmission portion at two opposite sides of the transmission slot for alternatively rotating the first transmission portion, and driving device for reciprocating the transmission member.
摘要翻译：公开了一种在线性传动机构中使用的润滑装置，包括具有容纳室和在其内部和外周形成有相等截面的开口的壳体，在容纳室中可轴向移动的压力构件，可旋转地安装在壳体并且具有位于其一端并延伸出压力构件的第一传动部分，螺纹螺母螺纹连接并由螺杆驱动以阻止压力构件外部的传动构件，传动构件限定在其中的传动槽和第二传输部分和第三传输部分，在传输槽的两个相对侧，用于可选地旋转第一传动部分，以及用于使传动部件往复运动的驱动装置。

2. 发明申请

US20080246143A1 EMBEDDED METAL HEAT SINK FOR SEMICONDUCTOR 有权
标题翻译：嵌入金属热电偶用于半导体
公开(公告)号：US20080246143A1
公开(公告)日：2008-10-09
申请号：US12136519
申请日：2008-06-10
申请人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin , Jin-Quan Huang , Shu-Kai Hu
发明人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin , Jin-Quan Huang , Shu-Kai Hu
IPC分类号： H01L23/36
CPC分类号： H01L33/641 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/49107 , H01L2924/01078 , H01L2924/01079 , H01S5/0226 , H01S5/02276 , H01S5/02469 , H01L2924/00014
摘要： An embedded metal heat sink for a semiconductor device is described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.
摘要翻译：描述了一种用于半导体器件的嵌入式金属散热器。用于半导体器件的嵌入式金属散热器包括金属薄层，金属散热器和两个接合焊盘。所述金属薄层包括相对侧的第一表面和第二表面，其中至少一个半导体器件嵌入在所述金属薄层的第一表面中，并且所述半导体器件具有两个具有不同导电类型的电极。金属散热器沉积在金属薄层的第二表面上。接合焊盘被放置在半导体器件周围的金属薄层的第一表面上，并且分别对应于电极，其中电极通过至少两根电线电连接并分别连接到相应的焊盘，并且焊盘是电连接到外部电路。

3. 发明申请

US20080090334A1 Method for Manufacturing Semiconductor Device 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：US20080090334A1
公开(公告)日：2008-04-17
申请号：US11840342
申请日：2007-08-17
申请人： Kuan-Chun Chen
发明人： Kuan-Chun Chen
IPC分类号： H01L21/00
CPC分类号： H01L33/642 , F21K9/00 , H01L25/0753 , H01L2224/48091 , H01L2924/19107 , H01L2933/0075 , H01L2924/00014 , H01L2924/00
摘要： A method for manufacturing a semiconductor device is described. The method comprises: providing a mold; coating a glue on a surface of the mold; providing at least one semiconductor chip, wherein the semiconductor chip includes a first side and a second side on opposite sides, and the first side of the semiconductor chip is pressed into a portion of the glue to expose the second side of the semiconductor chip; forming an adhesive layer to cover the second side of the semiconductor chip and the exposed portion of the glue; forming a metal heat sink on the adhesive layer; removing the glue and the mold; disposing a circuit board on the exposed portion of the adhesive layer; providing wires to electrically connect the circuit board to the semiconductor chip; and forming an encapsulation layer to completely encapsulate the semiconductor chip, the wires and the exposed portion of the adhesive layer.
摘要翻译：对半导体装置的制造方法进行说明。该方法包括：提供模具; 在模具的表面上涂胶; 提供至少一个半导体芯片，其中所述半导体芯片包括在相对侧上的第一侧和第二侧，并且所述半导体芯片的第一侧被压入所述胶的一部分以暴露所述半导体芯片的第二侧; 形成粘合剂层以覆盖半导体芯片的第二侧和胶的露出部分; 在粘合剂层上形成金属散热器; 去除胶水和模具; 将电路板设置在所述粘合剂层的暴露部分上; 提供电线以将电路板电连接到半导体芯片; 并且形成封装层以完全封装半导体芯片，电线和粘合剂层的暴露部分。

4. 发明申请

US20120319149A1 Light-Emitting Device Structure and Method for Manufacturing the Same 审中-公开
标题翻译：发光装置结构及其制造方法
公开(公告)号：US20120319149A1
公开(公告)日：2012-12-20
申请号：US13230917
申请日：2011-09-13
申请人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin
发明人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin
IPC分类号： H01L33/58 , H01L33/48
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/0095 , H01L33/22
摘要： A light-emitting device structure and a method for manufacturing the same are described. The light-emitting device structure includes a substrate and an illuminant structure. The substrate has a top surface and a lower surface on opposite sides, and two inclined side surfaces on opposite sides. Two sides of each inclined side surface are respectively connected to the top surface and the lower surface. The illuminant structure is disposed on the top surface.
摘要翻译：描述了一种发光器件结构及其制造方法。发光装置结构包括基板和发光体结构。基板在相对侧具有顶表面和下表面，在相对侧上具有两个倾斜侧表面。每个倾斜侧表面的两侧分别连接到顶表面和下表面。光源结构设置在顶面上。

5. 发明授权

US07723829B2 Embedded metal heat sink for semiconductor 有权
标题翻译：半导体嵌入式金属散热片
公开(公告)号：US07723829B2
公开(公告)日：2010-05-25
申请号：US12136519
申请日：2008-06-10
申请人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin , Jin-Quan Huang , Shu-Kai Hu
发明人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin , Jin-Quan Huang , Shu-Kai Hu
IPC分类号： H01L23/495
CPC分类号： H01L33/641 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/49107 , H01L2924/01078 , H01L2924/01079 , H01S5/0226 , H01S5/02276 , H01S5/02469 , H01L2924/00014
摘要： An embedded metal heat sink for a semiconductor device is described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.
摘要翻译：描述了一种用于半导体器件的嵌入式金属散热器。用于半导体器件的嵌入式金属散热器包括金属薄层，金属散热器和两个接合焊盘。所述金属薄层包括相对侧的第一表面和第二表面，其中至少一个半导体器件嵌入在所述金属薄层的第一表面中，并且所述半导体器件具有两个具有不同导电类型的电极。金属散热器沉积在金属薄层的第二表面上。接合焊盘被放置在半导体器件周围的金属薄层的第一表面上，并且分别对应于电极，其中电极通过至少两根电线电连接并分别连接到相应的焊盘，并且焊盘是电连接到外部电路。

6. 发明申请

US20070296074A1 Embedded Metal Heat Sink for Semiconductor Device and Method for Manufacturing the Same 有权
标题翻译：用于半导体器件的嵌入式金属散热器及其制造方法
公开(公告)号：US20070296074A1
公开(公告)日：2007-12-27
申请号：US11470279
申请日：2006-09-06
申请人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin , Jin-Quan Huang , Shu-Kai Hu
发明人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin , Jin-Quan Huang , Shu-Kai Hu
IPC分类号： H01L23/34
CPC分类号： H01L33/641 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/49107 , H01L2924/01078 , H01L2924/01079 , H01S5/0226 , H01S5/02276 , H01S5/02469 , H01L2924/00014
摘要： An embedded metal heat sink for a semiconductor device and a method for manufacturing the same are described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.
摘要翻译：描述了一种用于半导体器件的嵌入式金属散热器及其制造方法。用于半导体器件的嵌入式金属散热器包括金属薄层，金属散热器和两个接合焊盘。所述金属薄层包括相对侧的第一表面和第二表面，其中至少一个半导体器件嵌入在所述金属薄层的第一表面中，并且所述半导体器件具有两个具有不同导电类型的电极。金属散热器沉积在金属薄层的第二表面上。接合焊盘被放置在半导体器件周围的金属薄层的第一表面上，并且分别对应于电极，其中电极通过至少两根电线电连接并分别连接到相应的焊盘，并且焊盘是电连接到外部电路。

7. 发明申请

US20190321251A1 LIFT ASSIST DEVICE 审中-公开
公开(公告)号：US20190321251A1
公开(公告)日：2019-10-24
申请号：US16114729
申请日：2018-08-28
申请人： YUN-PIN CHEN , YUN-WEI HSIEH , KUAN-CHUN CHEN
发明人： YUN-PIN CHEN , YUN-WEI HSIEH , KUAN-CHUN CHEN
IPC分类号： A61H3/00 , A61H3/04
摘要： A lift assist device includes a base, a lifting mechanism and a fixing unit. The base stands on the ground. The lifting mechanism is disposed at the base and moves reciprocally along a lifting direction. The fixing unit is connected with and actuated by the lifting mechanism, and the fixing unit is configured to be fixed to the body of a user. The extension line of the lifting direction is not perpendicular to the ground.

8. 发明授权

US07387915B2 Method for manufacturing heat sink of semiconductor device 有权
标题翻译：制造半导体器件散热片的方法
公开(公告)号：US07387915B2
公开(公告)日：2008-06-17
申请号：US11470273
申请日：2006-09-06
申请人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin , Jin-Quan Huang , Shu-Kai Hu
发明人： Yan-Kuin Su , Kuan-Chun Chen , Chun-Liang Lin , Jin-Quan Huang , Shu-Kai Hu
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/641 , H01S5/02256 , H01S5/02272 , H01S5/024 , H01S5/02476 , H01S5/4093
摘要： A method for manufacturing a heat sink of a semiconductor device is described. In the method, an adhesive tape is provided, wherein the adhesive tape includes a first surface and a second surface on opposite sides, and the first surface of the adhesive tape adheres to a surface of a temporary substrate. At least one semiconductor device is provided, wherein the semiconductor device includes a first side and a second side opposite to the first side, and the first side of the one semiconductor device is pressed and set into a portion of the second surface of the adhesive tape, and the second side of the one semiconductor device is exposed. A thin metal layer is formed on the second side of the semiconductor device and the exposed portion of the second surface of the adhesive tape. A metal heat sink is formed on the thin metal layer. Then, the adhesive tape and the temporary substrate are removed.
摘要翻译：描述了制造半导体器件的散热器的方法。在该方法中，提供了一种粘合带，其中胶带包括第一表面和相对侧上的第二表面，并且粘合带的第一表面粘附到临时基底的表面。提供至少一个半导体器件，其中半导体器件包括与第一侧相对的第一侧和第二侧，并且一个半导体器件的第一侧被压入并设置在粘合带的第二表面的一部分中并且暴露一个半导体器件的第二面。在半导体器件的第二侧和胶带的第二表面的暴露部分上形成薄金属层。在薄金属层上形成金属散热器。然后，去除胶带和临时基板。

9. 发明申请

US20140077153A1 Photonic Devices with Embedded Hole Injection Layer to Improve Efficiency and Droop Rate 审中-公开
标题翻译：具有嵌入式空穴注入层的光子器件，以提高效率和下降率
公开(公告)号：US20140077153A1
公开(公告)日：2014-03-20
申请号：US13616345
申请日：2012-09-14
申请人： Zhen-Yu Li , Tzu-Te Yang , Hon-Way Lin , Chung-Pao Lin , Kuan-Chun Chen , Ching-Yu Chen , You-Da Lin , Hao-Chung Kuo
发明人： Zhen-Yu Li , Tzu-Te Yang , Hon-Way Lin , Chung-Pao Lin , Kuan-Chun Chen , Ching-Yu Chen , You-Da Lin , Hao-Chung Kuo
IPC分类号： H01L33/32
CPC分类号： H01S5/2013 , B82Y20/00 , H01L33/06 , H01L33/14 , H01L33/145 , H01L33/30 , H01L33/305 , H01L33/32 , H01S5/2009 , H01S5/3063 , H01S5/34333
摘要： The present disclosure involves a light-emitting device. The light-emitting device includes an n-doped gallium nitride (n-GaN) layer located over a substrate. A multiple quantum well (MQW) layer is located over the n-GaN layer. An electron-blocking layer is located over the MQW layer. A p-doped gallium nitride (p-GaN) layer is located over the electron-blocking layer. The light-emitting device includes a hole injection layer. In some embodiments, the hole injection layer includes a p-doped indium gallium nitride (p-InGaN) layer that is located in one of the three following locations: between the MQW layer and the electron-blocking layer; between the electron-blocking layer and the p-GaN layer; and inside the p-GaN layer.
摘要翻译：本发明涉及一种发光装置。发光器件包括位于衬底上方的n掺杂氮化镓（n-GaN）层。多量子阱（MQW）层位于n-GaN层上。电子阻挡层位于MQW层上。 p型掺杂氮化镓（p-GaN）层位于电子阻挡层上方。发光装置包括空穴注入层。在一些实施例中，空穴注入层包括位于以下三个位置之一的p掺杂的氮化铟镓（p-InGaN）层：在MQW层和电子阻挡层之间; 在电子阻挡层和p-GaN层之间; 并在p-GaN层内部。

10. 发明授权

US08668051B2 Lubricating device for linear transmission mechanism 有权
标题翻译：线性传动机构润滑装置
公开(公告)号：US08668051B2
公开(公告)日：2014-03-11
申请号：US13435999
申请日：2012-03-30
申请人： Kuan-Chun Chen , Wu-Teng Hsieh
发明人： Kuan-Chun Chen , Wu-Teng Hsieh
IPC分类号： F16N11/08
CPC分类号： F16N11/08
摘要： A lubricating device used in a linear transmission mechanism is disclosed to include a housing having an accommodation chamber and an opening formed on the inside and periphery thereof in equal cross section, a pressure member axially movable in the accommodation chamber, a screw rod pivotally mounted in the housing and having a first transmission portion located on one end thereof and extended out of the pressure member, a screw nut threaded onto the screw rod and driven by the screw rod to stop against the pressure member outside, a transmission member defining therein a transmission slot and a second transmission portion and a third transmission portion at two opposite sides of the transmission slot for alternatively rotating the first transmission portion, and driving device for reciprocating the transmission member.
摘要翻译：公开了一种在线性传动机构中使用的润滑装置，包括具有容纳室和在其内部和外周形成有相等截面的开口的壳体，在容纳室中可轴向移动的压力构件，可旋转地安装在壳体并且具有位于其一端并延伸出压力构件的第一传动部分，螺纹螺母螺纹连接并由螺杆驱动以阻止压力构件外部的传动构件，传动构件限定在其中的传动槽和第二传输部分和第三传输部分，在传输槽的两个相对侧，用于可选地旋转第一传动部分，以及用于使传动部件往复运动的驱动装置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式