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1. 发明授权

US6037830A Tailored field in multigate FETS 失效
标题翻译：多场FET中的定制领域
公开(公告)号：US6037830A
公开(公告)日：2000-03-14
申请号：US074770
申请日：1998-05-08
申请人： Samson Mil'shtein , Sergey Nabokin , Shixian Sui
发明人： Samson Mil'shtein , Sergey Nabokin , Shixian Sui
IPC分类号： H03K17/0412 , H03K17/687 , H03K17/785
CPC分类号： H03K17/687 , H03K17/04123
摘要： A uniform tailored electrical field in a multigate field effect D-mode transistor is automatically provided by a feedback circuit which couples drain bias voltages to the gates of a multigate transistor to bias the gates incrementally such that the highest voltage is applied to the gate nearest the drain while the lowest voltage is applied to the gate nearest the source. E-mode multigate FET's carry higher gate voltage on the gate close to the source compared to a gate voltage on a last gate, located close to the drain. The proper distribution of gate voltages improves the transconductance G.sub.m of the transistor and decreases gate capacitance C.sub.gs, which increases the speed of operation of a multigate FETs.
摘要翻译：多重场效应D模式晶体管中的均匀定制的电场由反馈电路自动提供，反馈电路将漏极偏置电压耦合到多晶硅晶体管的栅极，以逐渐偏置栅极，使得最高电压施加到最接近漏极，而最低电压施加到最靠近源极的栅极。与靠近漏极的最后一个栅极上的栅极电压相比，E模式多栅极FET在靠近源极的栅极上承载更高的栅极电压。栅极电压的适当分布提高了晶体管的跨导Gm并降低了栅极电容Cgs，这增加了多栅FET的工作速度。

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