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1. 发明授权

US08358674B2 Semiconductor laser element and method of manufacturing thereof 有权
标题翻译：半导体激光元件及其制造方法
公开(公告)号：US08358674B2
公开(公告)日：2013-01-22
申请号：US13051805
申请日：2011-03-18
申请人： Shinya Sonobe , Shingo Masui , Takashi Miyoshi
发明人： Shinya Sonobe , Shingo Masui , Takashi Miyoshi
IPC分类号： H01S5/00
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/2086 , H01S5/22 , H01S5/221 , H01S5/2214 , H01S5/222 , H01S5/3202 , H01S5/3214 , H01S5/34333 , H01S2301/176
摘要： A semiconductor laser element having; a substrate, a semiconductor layer laminated a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer in that order on the substrate, a stripe-like ridge formed on the upper face of the second conductivity type semiconductor layer, a conductive oxide layer formed on the upper face of the ridge, a dielectric layer, with a refractive index that is lower than the refractive index of the semiconductor layer, formed on the side faces of the ridge, and a metal layer formed so as to cover the conductive oxide layer and the dielectric layer, the surface of the conductive oxide layer is exposed from the dielectric layer, and the side faces of the conductive oxide layer are sloped with respect to the upper face of the ridge, and the inclination angle of the side faces of the conductive oxide layer with respect to the normal direction is greater than the inclination angle of the side faces of the ridge with respect to the normal direction.
摘要翻译：一种半导体激光元件，具有：衬底，在衬底上依次层叠第一导电型半导体层，有源层和第二导电类型半导体层的半导体层，形成在第二导电类型半导体层的上表面上的条状脊，形成在脊的上表面上的导电氧化物层，形成在脊的侧面上的具有低于半导体层的折射率的折射率的介电层和形成为覆盖的金属层导电氧化物层和电介质层，导电氧化物层的表面从电介质层露出，导电氧化物层的侧面相对于脊的上表面倾斜，并且倾斜角度导电氧化物层相对于法线方向的侧面大于脊相对于法线方向的侧面的倾斜角度。

2. 发明申请

US20100278207A1 SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：半导体激光元件
公开(公告)号：US20100278207A1
公开(公告)日：2010-11-04
申请号：US12742075
申请日：2008-10-31
申请人： Shinya Sonobe , Shingo Masui
发明人： Shinya Sonobe , Shingo Masui
IPC分类号： H01S5/22
CPC分类号： H01S5/168 , B82Y20/00 , H01S5/0021 , H01S5/028 , H01S5/0283 , H01S5/0425 , H01S5/166 , H01S5/2086 , H01S5/2214 , H01S5/222 , H01S5/3214 , H01S5/34333 , H01S2301/176 , H01S2301/18 , H01S2304/04
摘要： A semiconductor laser element includes a laminate composed of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a second embedded layer that is in contact with the second conductivity type semiconductor layer, has a stripe-like groove parallel to the cavity direction, and is composed of an insulator, the groove is embedded with a first embedded layer composed of a dielectric on the cavity end face side, and with a conductive layer on the inside.
摘要翻译：半导体激光元件包括由第一导电类型半导体层，有源层和第二导电类型半导体层构成的层叠体; 与第二导电型半导体层接触的第二嵌入层具有与空洞方向平行的条状槽，由绝缘体构成，所述槽嵌入由电介质构成的第一嵌入层腔体端面侧，内侧有导电层。

3. 发明授权

US08548023B2 Semiconductor laser element 有权
标题翻译：半导体激光元件
公开(公告)号：US08548023B2
公开(公告)日：2013-10-01
申请号：US12742075
申请日：2008-10-31
申请人： Shinya Sonobe , Shingo Masui
发明人： Shinya Sonobe , Shingo Masui
IPC分类号： H01S5/16 , H01S5/20 , H01S5/24
CPC分类号： H01S5/168 , B82Y20/00 , H01S5/0021 , H01S5/028 , H01S5/0283 , H01S5/0425 , H01S5/166 , H01S5/2086 , H01S5/2214 , H01S5/222 , H01S5/3214 , H01S5/34333 , H01S2301/176 , H01S2301/18 , H01S2304/04
摘要： A semiconductor laser element includes a laminate composed of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a second embedded layer that is in contact with the second conductivity type semiconductor layer, has a stripe-like groove parallel to the cavity direction, and is composed of an insulator, the groove is embedded with a first embedded layer composed of a dielectric on the cavity end face side, and with a conductive layer on the inside.
摘要翻译：半导体激光元件包括由第一导电类型半导体层，有源层和第二导电类型半导体层构成的层叠体; 与第二导电型半导体层接触的第二嵌入层具有与空洞方向平行的条状槽，由绝缘体构成，所述槽嵌入由电介质构成的第一嵌入层腔体端面侧，内侧有导电层。

4. 发明授权

US07436066B2 Semiconductor element 有权
标题翻译：半导体元件
公开(公告)号：US07436066B2
公开(公告)日：2008-10-14
申请号：US10563100
申请日：2005-10-06
申请人： Shinya Sonobe , Masakatsu Tomonari , Yoshiki Inoue
发明人： Shinya Sonobe , Masakatsu Tomonari , Yoshiki Inoue
IPC分类号： H01L29/45 , H01L21/441
CPC分类号： H01L33/44 , H01L25/0753 , H01L33/08 , H01L33/20 , H01L33/38 , H01L33/40 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/01322 , H01L2924/12032 , H01L2924/00 , H01L2924/00014
摘要： It is an object of the present invention to provide a highly reliable and high-quality semiconductor element by effectively preventing the migration of silver to a nitride semiconductor when an electrode main entirely or mostly of silver having high reflection efficiency is formed in contact with a nitride semiconductor layer. A semiconductor element comprises a nitride semiconductor layer, an electrode connected to said nitride semiconductor layer, and an insulating film covering at least part of said electrode, wherein the electrode comprises: a first metal film including silver or a silver alloy and in contact with the nitride semiconductor layer; and a second metal film completely covering the first metal film, and the insulating film comprises a nitride film.
摘要翻译：本发明的目的是提供一种高可靠性和高质量的半导体元件，其通过有效地防止银与氮化物半导体的迁移，当主要完全或大部分具有高反射效率的银形成与氮化物接触的银半导体层。半导体元件包括氮化物半导体层，连接到所述氮化物半导体层的电极和覆盖所述电极的至少一部分的绝缘膜，其中所述电极包括：第一金属膜，包括银或银合金，并与氮化物半导体层; 以及完全覆盖第一金属膜的第二金属膜，并且绝缘膜包括氮化物膜。

5. 发明申请

US20070023777A1 Semiconductor element 有权
标题翻译：半导体元件
公开(公告)号：US20070023777A1
公开(公告)日：2007-02-01
申请号：US10563100
申请日：2005-10-06
申请人： Shinya Sonobe , Masakatsu Tomonari , Yoshiki Inoue
发明人： Shinya Sonobe , Masakatsu Tomonari , Yoshiki Inoue
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L25/0753 , H01L33/08 , H01L33/20 , H01L33/38 , H01L33/40 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/01322 , H01L2924/12032 , H01L2924/00 , H01L2924/00014
摘要： It is an object of the present invention to provide a highly reliable and high-quality semiconductor element by effectively preventing the migration of silver to a nitride semiconductor when an electrode main entirely or mostly of silver having high reflection efficiency is formed in contact with a nitride semiconductor layer. A semiconductor element comprises a nitride semiconductor layer, an electrode connected to said nitride semiconductor layer, and an insulating film covering at least part of said electrode, wherein the electrode comprises: a first metal film including silver or a silver alloy and in contact with the nitride semiconductor layer; and a second metal film completely covering the first metal film, and the insulating film comprises a nitride film.
摘要翻译：本发明的目的是提供一种高可靠性和高质量的半导体元件，其通过有效地防止银与氮化物半导体的迁移，当主要完全或大部分具有高反射效率的银形成与氮化物接触的银半导体层。半导体元件包括氮化物半导体层，连接到所述氮化物半导体层的电极和覆盖所述电极的至少一部分的绝缘膜，其中所述电极包括：第一金属膜，包括银或银合金，并与氮化物半导体层; 以及完全覆盖第一金属膜的第二金属膜，并且绝缘膜包括氮化物膜。

6. 发明申请

US20110235666A1 SEMICONDUCTOR LASER ELEMENT AND METHOD OF MANUFACTURING THEREOF 有权
标题翻译：半导体激光元件及其制造方法
公开(公告)号：US20110235666A1
公开(公告)日：2011-09-29
申请号：US13051805
申请日：2011-03-18
申请人： Shinya SONOBE , Shingo MASUI , Takashi MIYOSHI
发明人： Shinya SONOBE , Shingo MASUI , Takashi MIYOSHI
IPC分类号： H01S5/343 , H01L33/06
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/2086 , H01S5/22 , H01S5/221 , H01S5/2214 , H01S5/222 , H01S5/3202 , H01S5/3214 , H01S5/34333 , H01S2301/176
摘要： A semiconductor laser element having; a substrate, a semiconductor layer laminated a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer in that order on the substrate, a stripe-like ridge formed on the upper face of the second conductivity type semiconductor layer, a conductive oxide layer formed on the upper face of the ridge, a dielectric layer, with a refractive index that is lower than the refractive index of the semiconductor layer, formed on the side faces of the ridge, and a metal layer formed so as to cover the conductive oxide layer and the dielectric layer, the surface of the conductive oxide layer is exposed from the dielectric layer, and the side faces of the conductive oxide layer are sloped with respect to the upper face of the ridge, and the inclination angle of the side faces of the conductive oxide layer with respect to the normal direction is greater than the inclination angle of the side faces of the ridge with respect to the normal direction.
摘要翻译：一种半导体激光元件，具有：衬底，在衬底上依次层叠第一导电型半导体层，有源层和第二导电类型半导体层的半导体层，形成在第二导电类型半导体层的上表面上的条状脊，形成在脊的上表面上的导电氧化物层，形成在脊的侧面上的具有低于半导体层的折射率的折射率的介电层和形成为覆盖的金属层导电氧化物层和电介质层，导电氧化物层的表面从电介质层露出，导电氧化物层的侧面相对于脊的上表面倾斜，并且倾斜角度导电氧化物层相对于法线方向的侧面大于脊相对于法线方向的侧面的倾斜角度。

7. 发明授权

US07696522B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07696522B2
公开(公告)日：2010-04-13
申请号：US11223431
申请日：2005-09-08
申请人： Masato Ono , Shinya Sonobe , Hiroyuki Ishida , Tsukasa Tokida
发明人： Masato Ono , Shinya Sonobe , Hiroyuki Ishida , Tsukasa Tokida
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/44 , H01L33/508 , H01L33/56 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16 , H01L2924/00014 , H01L2933/0041 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599 , H01L2224/05099
摘要： A light emitting device including a light source and a light transforming 101 member containing a fluorescent substance for absorbing at least a part of a light emitted from the light source and for emitting a light having a different wavelength. The light source includes a plurality of semiconductor light emitting units 104, at least a part of which are covered with the light transforming member 101. A shielding member 102 between a first semiconductor light emitting unit 104a covered with the light transforming member 101 and a second semiconductor light emitting unit 104b which is adjacent to the semiconductor light emitting unit 104a.
摘要翻译：一种发光器件，包括光源和含有用于吸收从光源发射的光的至少一部分并用于发射具有不同波长的光的荧光物质的光转换101元件。光源包括多个半导体发光单元104，其至少一部分被光转换构件101覆盖。覆盖有光转换构件101的第一半导体发光单元104a和第二半导体发光单元104a之间的屏蔽构件102 与半导体发光单元104a相邻的半导体发光单元104b。

8. 发明申请

US20060055309A1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US20060055309A1
公开(公告)日：2006-03-16
申请号：US11223431
申请日：2005-09-08
申请人： Masato Ono , Shinya Sonobe , Hiroyuki Ishida , Tsukasa Tokida
发明人： Masato Ono , Shinya Sonobe , Hiroyuki Ishida , Tsukasa Tokida
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L25/0753 , H01L33/44 , H01L33/508 , H01L33/56 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16 , H01L2924/00014 , H01L2933/0041 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599 , H01L2224/05099
摘要： A light emitting device including a light source and a light transforming 101 member containing a fluorescent substance for absorbing at least a part of a light emitted from the light source and for emitting a light having a different wavelength. The light source includes a plurality of semiconductor light emitting units 104, at least a part of which are covered with the light transforming member 101. A shielding member 102 between a first semiconductor light emitting unit 104a covered with the light transforming member 101 and a second semiconductor light emitting unit 104b which is adjacent to the semiconductor light emitting unit 104a.
摘要翻译：一种发光器件，包括光源和含有用于吸收从光源发射的光的至少一部分并用于发射具有不同波长的光的荧光物质的光转换101元件。光源包括多个半导体发光单元104，其至少一部分被光转换构件101覆盖。在被光转换构件101覆盖的第一半导体发光单元104a和与半导体发光单元104a相邻的第二半导体发光单元104b。

9. 发明授权

US06977395B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06977395B2
公开(公告)日：2005-12-20
申请号：US10433327
申请日：2002-07-12
申请人： Motokazu Yamada , Shinya Sonobe , Masahiko Sano
发明人： Motokazu Yamada , Shinya Sonobe , Masahiko Sano
IPC分类号： H01L33/30 , H01L33/38 , H01L33/42 , H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/38 , H01L33/387
摘要： A semiconductor device has at least a GaN system semiconductor having n-conductivity type and a GaN system semiconductor having p-conductivity type layered on a substrate. Electrodes are formed on both surfaces of the GaN system semiconductor layer having n-conductivity type and the GaN system semiconductor layer having p-conductivity type. A first electrode including at least silver and a second electrode excluding silver are formed on the surface of the GaN system semiconductor layer having p-conductivity type, with the second electrode surrounding the periphery of the first electrode. In addition, the first electrode has an opening at which the GaN system semiconductor layer having p-conductivity type is exposed inside of the outline of the first electrode. According to such structure, it is possible to realize a device having high luminous efficiency in use and high reliability.
摘要翻译：半导体器件至少具有n导电型的GaN系半导体和在衬底上层叠有p导电型的GaN系半导体。电极形成在具有n导电型的GaN系半导体层和具有p导电型的GaN系半导体层的两个表面上。在具有p导电型的GaN系半导体层的表面上形成有至少包含银和除银以外的第二电极的第一电极，第二电极围绕第一电极的周边。此外，第一电极具有开口，在该开口处具有p导电型的GaN系半导体层暴露在第一电极的轮廓内部。根据这样的结构，能够实现使用时的发光效率高，可靠性高的装置。

10. 发明授权

US06921928B2 Nitride semiconductor element 有权
标题翻译：氮化物半导体元件
公开(公告)号：US06921928B2
公开(公告)日：2005-07-26
申请号：US10676267
申请日：2003-10-02
申请人： Shinya Sonobe
发明人： Shinya Sonobe
IPC分类号： H01L21/28 , H01L33/32 , H01L33/40 , H01L33/62 , H01L29/22
CPC分类号： H01L33/40 , H01L24/17 , H01L33/20 , H01L33/32 , H01L33/38 , H01L2224/05001 , H01L2224/05026 , H01L2224/0508 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/01056 , H01L2924/01058 , H01L2924/01059 , H01L2924/01063 , H01L2924/01065 , H01L2924/01066 , H01L2924/01067 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： In the nitride semiconductor device having a p-type nitride semiconductor layer, an electrode including at least rhodium and iridium is formed on the p-type nitride semiconductor layer. By this construction, an excellent ohmic contact between the electrode and the p-type nitride semiconductor layer and a high reflectivity in the electrode can be obtained, so that the nitride semiconductor device having excellent external quantum efficiency can be provided.
摘要翻译：在具有p型氮化物半导体层的氮化物半导体器件中，在p型氮化物半导体层上形成至少包含铑和铱的电极。通过这种结构，可以获得电极和p型氮化物半导体层之间的极好的欧姆接触和电极中的高反射率，从而可以提供具有优异的外部量子效率的氮化物半导体器件。

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