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    • 1. 发明授权
    • Manufacturing method of semiconductor device
    • 半导体器件的制造方法
    • US09112036B2
    • 2015-08-18
    • US13482398
    • 2012-05-29
    • Junichi KoezukaShinji OhnoYuichi SatoShunpei Yamazaki
    • Junichi KoezukaShinji OhnoYuichi SatoShunpei Yamazaki
    • H01L21/8232H01L29/786
    • H01L29/7869
    • A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. In a manufacturing method of the transistor including the oxide semiconductor film including a channel formation region, an insulating film including a metal element is formed over the oxide semiconductor film, and low-resistance regions in which a dopant added through the insulating film by an implantation method is included are formed in the oxide semiconductor film. The channel formation region is positioned between the low-resistance regions in the channel length direction.
    • 提供了具有良好的导通状态特性的使用氧化物半导体的晶体管。 提供了包括能够进行高速响应和高速运行的晶体管的高性能半导体器件。 在包括具有沟道形成区域的氧化物半导体膜的晶体管的制造方法中,在氧化物半导体膜上形成包含金属元素的绝缘膜,以及通过注入在绝缘膜上添加的掺杂剂的低电阻区域 包含的方法形成在氧化物半导体膜中。 沟道形成区域位于沟道长度方向的低电阻区域之间。
    • 8. 发明授权
    • Semiconductor device and method for manufacturing the same
    • 半导体装置及其制造方法
    • US09299852B2
    • 2016-03-29
    • US13483078
    • 2012-05-30
    • Kyoko YoshiokaJunichi KoezukaShinji OhnoYuichi SatoShinya Sasagawa
    • Kyoko YoshiokaJunichi KoezukaShinji OhnoYuichi SatoShinya Sasagawa
    • H01L21/00H01L29/786H01L21/324H01L29/66
    • H01L29/7869H01L21/324H01L29/66969
    • A miniaturized semiconductor device in which an increase in power consumption is suppressed and a method for manufacturing the semiconductor device are provided. A highly reliable semiconductor device having stable electric characteristics and a method for manufacturing the semiconductor device are provided. An oxide semiconductor film is irradiated with ions accelerated by an electric field in order to reduce the average surface roughness of a surface of the oxide semiconductor film. Consequently, an increase in the leakage current and power consumption of a transistor can be suppressed. Moreover, by performing heat treatment so that the oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to the surface of the oxide semiconductor film, a change in electric characteristics of the oxide semiconductor film due to irradiation with visible light or ultraviolet light can be suppressed.
    • 提供抑制功耗增加的小型化半导体装置及其制造方法。 提供了一种具有稳定电特性的高度可靠的半导体器件及其半导体器件的制造方法。 为了降低氧化物半导体膜的表面的平均表面粗糙度,用电场加速的离子照射氧化物半导体膜。 因此,可以抑制晶体管的漏电流和功耗的增加。 此外,通过进行热处理使得氧化物半导体膜包括具有与氧化物半导体膜的表面基本垂直的c轴的晶体,由于可见光或紫外线的照射而导致的氧化物半导体膜的电特性的变化 可以抑制。