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1. 发明申请

US20110215746A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20110215746A1
公开(公告)日：2011-09-08
申请号：US13036207
申请日：2011-02-28
申请人： Ayanori IKOSHI , Hiroto YAMAGIWA , Shingo HASHIZUME , Manabu YANAGIHARA , Yasuhiro UEMOTO
发明人： Ayanori IKOSHI , Hiroto YAMAGIWA , Shingo HASHIZUME , Manabu YANAGIHARA , Yasuhiro UEMOTO
IPC分类号： H02P6/14 , H03K3/021
CPC分类号： H02P6/14 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/0603 , H01L2224/45014 , H01L2224/45124 , H01L2224/45147 , H01L2224/48247 , H01L2224/48472 , H01L2224/4903 , H01L2224/49112 , H01L2224/49171 , H01L2924/00014 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/30107 , H01L2924/3011 , H03K3/021 , H01L2924/00 , H01L2224/05599 , H01L2924/206
摘要： A semiconductor device according to the present invention is a semiconductor device which includes: a semiconductor element; a gate drive circuit; and a connection terminal unit, wherein the semiconductor element includes: a gate electrode pad; and first and second ohmic electrode pads, the connection terminal includes: a first ohmic electrode terminal connected to the first ohmic electrode pad; a second ohmic electrode terminal connected to the second ohmic electrode pad; a gate drive terminal connected to the first ohmic electrode pad; and a gate terminal connected to the gate electrode pad, an input terminal of the gate drive circuit is connected to the gate drive terminal, an output terminal of the gate drive circuit is connected to the gate terminal, and a potential of the first ohmic electrode pad corresponds to a reference potential of the gate drive circuit.
摘要翻译：根据本发明的半导体器件是半导体器件，其包括：半导体元件; 门驱动电路; 以及连接端子单元，其中所述半导体元件包括：栅极电极焊盘; 以及第一和第二欧姆电极焊盘，所述连接端子包括：连接到所述第一欧姆电极焊盘的第一欧姆电极端子; 连接到第二欧姆电极焊盘的第二欧姆电极端子; 连接到所述第一欧姆电极焊盘的栅极驱动端子; 以及连接到栅极电极焊盘的栅极端子，栅极驱动电路的输入端子连接到栅极驱动端子，栅极驱动电路的输出端子连接到栅极端子，并且第一欧姆电极的电位焊盘对应于栅极驱动电路的参考电位。

2. 发明申请

US20110215379A1 FIELD EFFECT TRANSISTOR 有权
标题翻译：场效应晶体管
公开(公告)号：US20110215379A1
公开(公告)日：2011-09-08
申请号：US13021118
申请日：2011-02-04
申请人： Ayanori IKOSHI , Shingo HASHIZUME , Masahiro HIKITA , Hiroto YAMAGIWA , Manabu YANAGIHARA
发明人： Ayanori IKOSHI , Shingo HASHIZUME , Masahiro HIKITA , Hiroto YAMAGIWA , Manabu YANAGIHARA
IPC分类号： H01L29/778
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/41758
摘要： A field effect transistor includes a semiconductor stack formed on a substrate, and having a first nitride semiconductor layer and a second nitride semiconductor layer. A source electrode and a drain electrode are formed on the semiconductor stack so as to be separated from each other. A gate electrode is formed between the source electrode and the drain electrode so as to be separated from the source electrode and the drain electrode. A hole injection portion is formed near the drain electrode. The hole injection portion has a p-type third nitride semiconductor layer, and a hole injection electrode formed on the third nitride semiconductor layer. The hole injection electrode and the drain electrode have substantially the same potential.
摘要翻译：场效应晶体管包括形成在衬底上的半导体堆叠，并且具有第一氮化物半导体层和第二氮化物半导体层。源电极和漏电极形成在半导体堆叠上以便彼此分离。在源电极和漏电极之间形成栅电极，以与源电极和漏电极分离。在漏电极附近形成空穴注入部。空穴注入部分具有p型第三氮化物半导体层和形成在第三氮化物半导体层上的空穴注入电极。空穴注入电极和漏电极具有大致相同的电位。

3. 发明申请

US20110204807A1 TWO-WIRE AC SWITCH 有权
标题翻译：双线交流开关
公开(公告)号：US20110204807A1
公开(公告)日：2011-08-25
申请号：US13032297
申请日：2011-02-22
申请人： Shingo HASHIZUME , Ayanori Ikoshi , Hiroto Yamagiwa , Yasuhiro Uemoto , Manabu Yanagihara
发明人： Shingo HASHIZUME , Ayanori Ikoshi , Hiroto Yamagiwa , Yasuhiro Uemoto , Manabu Yanagihara
IPC分类号： H05B41/16 , H03K17/56
CPC分类号： H01L29/808 , H01L29/2003 , H01L29/42316 , H03K17/12 , H03K2217/0009
摘要： A two-wire AC switch suppressing heat from a bidirectional switch element inside the switch is provided. The two-wire AC switch 100a connected between an AC power supply 101 and a load 102 includes: a bidirectional switch element 103 which flows passing current bi-directionally, selects whether to flow or block the current, is connected in series with the AC power supply 101 and the load 102 to form a closed-loop circuit, and is made of a group-III nitride semiconductor; a full-wave rectifier 104 performing full-wave rectification on power supplied from the AC power supply 101; a power supply circuit 105 smoothing a voltage after the full-wave rectification to generate DC power; a first gate drive circuit 107 and a second gate drive circuit 108 each outputting a control signal to the bidirectional switch element 103; and a control circuit 106 controlling the first and second gate drive circuits 107 and 108.
摘要翻译：提供一种抑制来自开关内的双向开关元件的热量的二线交流开关。连接在交流电源101和负载102之间的二线交流开关100a包括：双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，电源101和负载102以形成闭环电路，并且由III族氮化物半导体制成; 全波整流器104对从AC电源101提供的电力进行全波整流; 电源电路105，对全波整流后的电压进行平滑化，生成直流电力; 每个向双向开关元件103输出控制信号的第一栅极驱动电路107和第二栅极驱动电路108; 以及控制电路106，其控制第一和第二栅极驱动电路107和108。

4. 发明授权

US08526207B2 Bi-directional switch, alternating-current two-wire switch, switching power source circuit, and method of driving bi-directional switch 有权
标题翻译：双向开关，交流二线开关，开关电源电路及双向开关驱动方式
公开(公告)号：US08526207B2
公开(公告)日：2013-09-03
申请号：US13158934
申请日：2011-06-13
申请人： Hiroto Yamagiwa , Shingo Hashizume , Manabu Yanagihara , Ayanori Ikoshi
发明人： Hiroto Yamagiwa , Shingo Hashizume , Manabu Yanagihara , Ayanori Ikoshi
IPC分类号： H02M7/02 , H03K17/94 , H03K17/687
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/42316 , H03K17/6871 , H03K2017/6875 , H03K2217/0009
摘要： A semiconductor device 101 in a bi-directional switch includes: a first electrode 109A, a second electrode 109B, a first gate electrode 112A, and a second gate electrode 112B. In a transition period: when the potential of the first electrode 109A is higher than the potential of the second electrode 109B, a voltage lower than the first threshold voltage is applied to the first gate electrode 112A and a voltage higher than the second threshold value voltage is applied to the second gate electrode 112B; and otherwise, a voltage higher than the first threshold value voltage is applied to the first gate electrode, and a voltage lower than the second threshold value voltage is applied to the second gate electrode.
摘要翻译：双向开关中的半导体器件101包括：第一电极109A，第二电极109B，第一栅电极112A和第二栅电极112B。在过渡期间：当第一电极109A的电位高于第二电极109B的电位时，将低于第一阈值电压的电压施加到第一栅电极112A，并且施加高于第二阈值电压施加到第二栅电极112B; 否则，将高于第一阈值电压的电压施加到第一栅电极，并且将低于第二阈值电压的电压施加到第二栅电极。

5. 发明授权

US08148752B2 Field effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US08148752B2
公开(公告)日：2012-04-03
申请号：US13021118
申请日：2011-02-04
申请人： Ayanori Ikoshi , Shingo Hashizume , Masahiro Hikita , Hiroto Yamagiwa , Manabu Yanagihara
发明人： Ayanori Ikoshi , Shingo Hashizume , Masahiro Hikita , Hiroto Yamagiwa , Manabu Yanagihara
IPC分类号： H01L29/778
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/41758
摘要： A field effect transistor includes a semiconductor stack formed on a substrate, and having a first nitride semiconductor layer and a second nitride semiconductor layer. A source electrode and a drain electrode are formed on the semiconductor stack so as to be separated from each other. A gate electrode is formed between the source electrode and the drain electrode so as to be separated from the source electrode and the drain electrode. A hole injection portion is formed near the drain electrode. The hole injection portion has a p-type third nitride semiconductor layer, and a hole injection electrode formed on the third nitride semiconductor layer. The hole injection electrode and the drain electrode have substantially the same potential.
摘要翻译：场效应晶体管包括形成在衬底上的半导体堆叠，并且具有第一氮化物半导体层和第二氮化物半导体层。源电极和漏电极形成在半导体堆叠上以便彼此分离。在源电极和漏电极之间形成栅电极，以与源电极和漏电极分离。在漏电极附近形成空穴注入部。空穴注入部分具有p型第三氮化物半导体层和形成在第三氮化物半导体层上的空穴注入电极。空穴注入电极和漏电极具有大致相同的电位。

6. 发明申请

US20110193171A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110193171A1
公开(公告)日：2011-08-11
申请号：US12905801
申请日：2010-10-15
申请人： Hiroto Yamagiwa , Shingo Hashizume , Ayanori Ikoshi , Manabu Yanagihara , Yasuhiro Uemoto
发明人： Hiroto Yamagiwa , Shingo Hashizume , Ayanori Ikoshi , Manabu Yanagihara , Yasuhiro Uemoto
IPC分类号： H01L27/088
CPC分类号： H01L29/7786 , H01L27/0266 , H01L27/0605 , H01L29/1066 , H01L29/2003 , H01L29/41758 , H01L29/42364 , H01L29/8124 , H01L29/861
摘要： A semiconductor device includes a first transistor formed on a first element region, and a first protecting element including a second transistor formed on a second element region. A second protecting element ohmic electrode is connected to a first gate electrode, a first protecting element ohmic electrode is connected to a first ohmic electrode, and a first protecting element gate electrode is connected to at least one of the first protecting element ohmic electrode and the second protecting element ohmic electrode. The second element region is smaller in area than the first element region.
摘要翻译：半导体器件包括形成在第一元件区上的第一晶体管和包括形成在第二元件区上的第二晶体管的第一保护元件。第二保护元件欧姆电极连接到第一栅电极，第一保护元件欧姆电极连接到第一欧姆电极，第一保护元件栅电极连接至第一保护元件欧姆电极和第二保护元件欧姆电极。第二元件区域的面积小于第一元件区域。

7. 发明授权

US08497553B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08497553B2
公开(公告)日：2013-07-30
申请号：US12905801
申请日：2010-10-15
申请人： Hiroto Yamagiwa , Shingo Hashizume , Ayanori Ikoshi , Manabu Yanagihara , Yasuhiro Uemoto
发明人： Hiroto Yamagiwa , Shingo Hashizume , Ayanori Ikoshi , Manabu Yanagihara , Yasuhiro Uemoto
IPC分类号： H01L23/62 , H01L29/66 , H01L31/06 , H01L21/338 , H02H3/00 , H02H9/02
CPC分类号： H01L29/7786 , H01L27/0266 , H01L27/0605 , H01L29/1066 , H01L29/2003 , H01L29/41758 , H01L29/42364 , H01L29/8124 , H01L29/861
摘要： A semiconductor device includes a first transistor formed on a first element region, and a first protecting element including a second transistor formed on a second element region. A second protecting element ohmic electrode is connected to a first gate electrode, a first protecting element ohmic electrode is connected to a first ohmic electrode, and a first protecting element gate electrode is connected to at least one of the first protecting element ohmic electrode and the second protecting element ohmic electrode. The second element region is smaller in area than the first element region.
摘要翻译：半导体器件包括形成在第一元件区上的第一晶体管和包括形成在第二元件区上的第二晶体管的第一保护元件。第二保护元件欧姆电极连接到第一栅电极，第一保护元件欧姆电极连接到第一欧姆电极，第一保护元件栅电极连接至第一保护元件欧姆电极和第二保护元件欧姆电极。第二元件区域的面积小于第一元件区域。

8. 发明申请

US20110305054A1 BI-DIRECTIONAL SWITCH, ALTERNATING-CURRENT TWO-WIRE SWITCH, SWITCHING POWER SOURCE CIRCUIT, AND METHOD OF DRIVING BI-DIRECTIONAL SWITCH 有权
标题翻译：双向开关，交替电流二线开关，开关电源电路以及驱动双向开关的方法
公开(公告)号：US20110305054A1
公开(公告)日：2011-12-15
申请号：US13158934
申请日：2011-06-13
申请人： Hiroto YAMAGIWA , Shingo Hashizume , Manabu Yanagihara , Ayanori Ikoshi
发明人： Hiroto YAMAGIWA , Shingo Hashizume , Manabu Yanagihara , Ayanori Ikoshi
IPC分类号： H02M7/02 , H03K17/94 , H03K17/687
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/42316 , H03K17/6871 , H03K2017/6875 , H03K2217/0009
摘要： A semiconductor device 101 in a bi-directional switch includes: a first electrode 109A, a second electrode 109B, a first gate electrode 112A, and a second gate electrode 112B. In a transition period: when the potential of the first electrode 109A is higher than the potential of the second electrode 109B, a voltage lower than the first threshold voltage is applied to the first gate electrode 112A and a voltage higher than the second threshold value voltage is applied to the second gate electrode 112B; and otherwise, a voltage higher than the first threshold value voltage is applied to the first gate electrode, and a voltage lower than the second threshold value voltage is applied to the second gate electrode.
摘要翻译：双向开关中的半导体器件101包括：第一电极109A，第二电极109B，第一栅电极112A和第二栅电极112B。在过渡期间：当第一电极109A的电位高于第二电极109B的电位时，将低于第一阈值电压的电压施加到第一栅电极112A，并且施加高于第二阈值电压施加到第二栅电极112B; 否则，将高于第一阈值电压的电压施加到第一栅电极，并且将低于第二阈值电压的电压施加到第二栅电极。

9. 发明授权

US08593068B2 Two-wire AC switch 有权
标题翻译：双线交流开关
公开(公告)号：US08593068B2
公开(公告)日：2013-11-26
申请号：US13032297
申请日：2011-02-22
申请人： Shingo Hashizume , Ayanori Ikoshi , Hiroto Yamagiwa , Yasuhiro Uemoto , Manabu Yanagihara
发明人： Shingo Hashizume , Ayanori Ikoshi , Hiroto Yamagiwa , Yasuhiro Uemoto , Manabu Yanagihara
IPC分类号： H05B39/02
CPC分类号： H01L29/808 , H01L29/2003 , H01L29/42316 , H03K17/12 , H03K2217/0009
摘要： A two-wire AC switch suppressing heat from a bidirectional switch element inside the switch is provided. The two-wire AC switch 100a connected between an AC power supply 101 and a load 102 includes: a bidirectional switch element 103 which flows passing current bi-directionally, selects whether to flow or block the current, is connected in series with the AC power supply 101 and the load 102 to form a closed-loop circuit, and is made of a group-III nitride semiconductor; a full-wave rectifier 104 performing full-wave rectification on power supplied from the AC power supply 101; a power supply circuit 105 smoothing a voltage after the full-wave rectification to generate DC power; a first gate drive circuit 107 and a second gate drive circuit 108 each outputting a control signal to the bidirectional switch element 103; and a control circuit 106 controlling the first and second gate drive circuits 107 and 108.
摘要翻译：提供一种抑制来自开关内的双向开关元件的热量的二线交流开关。连接在交流电源101和负载102之间的二线交流开关100a包括：双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，电源101和负载102以形成闭环电路，并且由III族氮化物半导体制成; 全波整流器104对从AC电源101提供的电力进行全波整流; 电源电路105，对全波整流后的电压进行平滑化，生成直流电力; 每个向双向开关元件103输出控制信号的第一栅极驱动电路107和第二栅极驱动电路108; 以及控制电路106，其控制第一和第二栅极驱动电路107和108。

10. 发明申请

US20070194350A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20070194350A1
公开(公告)日：2007-08-23
申请号：US11531860
申请日：2006-09-14
申请人： Yasuo HIROOKA , Shingo HASHIZUME , Michiya OHTSUJI , Tomonari OOTA
发明人： Yasuo HIROOKA , Shingo HASHIZUME , Michiya OHTSUJI , Tomonari OOTA
IPC分类号： H01L29/768
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/0839 , H01L29/0869 , H01L29/1095 , H01L29/41766 , H01L29/66325 , H01L29/66727 , H01L29/7395
摘要： A semiconductor device includes the following: a well layer formed in the surface region of a silicon layer; a source layer formed in the surface region of the well layer; a high-concentration well layer formed in the well layer so that its depth from the surface of the silicon layer is shallower than the well layer and deeper than the source layer; a gate electrode formed linearly across the silicon layer, the well layer, and the source layer; a first contact region connected electrically to the source layer; second contact regions arranged at predetermined intervals in the direction parallel to the gate electrode within the first contact region and connected electrically to the high-concentration well layer; and a source electrode connected electrically to the first and second contact regions. The source electrode is connected to either the first contact region or the second contact region in any cross section perpendicular to the longitudinal direction of the gate electrode. This semiconductor device can improve the avalanche resistance.
摘要翻译：半导体器件包括：在硅层的表面区域中形成的阱层; 形成在所述阱层的表面区域中的源极层; 形成在阱层中的高浓度阱层，使得其从硅层的表面的深度比阱层浅，并且比源层更深; 在硅层，阱层和源极层上线性形成的栅电极; 与源极电连接的第一接触区域; 所述第二接触区域以与所述第一接触区域内的所述栅电极平行的方向以预定间隔排列并且电连接到所述高浓度阱层; 以及与第一和第二接触区域电连接的源电极。源电极在与栅电极的纵向方向垂直的任何横截面中连接到第一接触区域或第二接触区域。该半导体装置可以提高雪崩阻力。

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