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1. 发明申请

US20110215379A1 FIELD EFFECT TRANSISTOR 有权
标题翻译：场效应晶体管
公开(公告)号：US20110215379A1
公开(公告)日：2011-09-08
申请号：US13021118
申请日：2011-02-04
申请人： Ayanori IKOSHI , Shingo HASHIZUME , Masahiro HIKITA , Hiroto YAMAGIWA , Manabu YANAGIHARA
发明人： Ayanori IKOSHI , Shingo HASHIZUME , Masahiro HIKITA , Hiroto YAMAGIWA , Manabu YANAGIHARA
IPC分类号： H01L29/778
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/41758
摘要： A field effect transistor includes a semiconductor stack formed on a substrate, and having a first nitride semiconductor layer and a second nitride semiconductor layer. A source electrode and a drain electrode are formed on the semiconductor stack so as to be separated from each other. A gate electrode is formed between the source electrode and the drain electrode so as to be separated from the source electrode and the drain electrode. A hole injection portion is formed near the drain electrode. The hole injection portion has a p-type third nitride semiconductor layer, and a hole injection electrode formed on the third nitride semiconductor layer. The hole injection electrode and the drain electrode have substantially the same potential.
摘要翻译：场效应晶体管包括形成在衬底上的半导体堆叠，并且具有第一氮化物半导体层和第二氮化物半导体层。源电极和漏电极形成在半导体堆叠上以便彼此分离。在源电极和漏电极之间形成栅电极，以与源电极和漏电极分离。在漏电极附近形成空穴注入部。空穴注入部分具有p型第三氮化物半导体层和形成在第三氮化物半导体层上的空穴注入电极。空穴注入电极和漏电极具有大致相同的电位。

2. 发明申请

US20110215746A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20110215746A1
公开(公告)日：2011-09-08
申请号：US13036207
申请日：2011-02-28
申请人： Ayanori IKOSHI , Hiroto YAMAGIWA , Shingo HASHIZUME , Manabu YANAGIHARA , Yasuhiro UEMOTO
发明人： Ayanori IKOSHI , Hiroto YAMAGIWA , Shingo HASHIZUME , Manabu YANAGIHARA , Yasuhiro UEMOTO
IPC分类号： H02P6/14 , H03K3/021
CPC分类号： H02P6/14 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/0603 , H01L2224/45014 , H01L2224/45124 , H01L2224/45147 , H01L2224/48247 , H01L2224/48472 , H01L2224/4903 , H01L2224/49112 , H01L2224/49171 , H01L2924/00014 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/30107 , H01L2924/3011 , H03K3/021 , H01L2924/00 , H01L2224/05599 , H01L2924/206
摘要： A semiconductor device according to the present invention is a semiconductor device which includes: a semiconductor element; a gate drive circuit; and a connection terminal unit, wherein the semiconductor element includes: a gate electrode pad; and first and second ohmic electrode pads, the connection terminal includes: a first ohmic electrode terminal connected to the first ohmic electrode pad; a second ohmic electrode terminal connected to the second ohmic electrode pad; a gate drive terminal connected to the first ohmic electrode pad; and a gate terminal connected to the gate electrode pad, an input terminal of the gate drive circuit is connected to the gate drive terminal, an output terminal of the gate drive circuit is connected to the gate terminal, and a potential of the first ohmic electrode pad corresponds to a reference potential of the gate drive circuit.
摘要翻译：根据本发明的半导体器件是半导体器件，其包括：半导体元件; 门驱动电路; 以及连接端子单元，其中所述半导体元件包括：栅极电极焊盘; 以及第一和第二欧姆电极焊盘，所述连接端子包括：连接到所述第一欧姆电极焊盘的第一欧姆电极端子; 连接到第二欧姆电极焊盘的第二欧姆电极端子; 连接到所述第一欧姆电极焊盘的栅极驱动端子; 以及连接到栅极电极焊盘的栅极端子，栅极驱动电路的输入端子连接到栅极驱动端子，栅极驱动电路的输出端子连接到栅极端子，并且第一欧姆电极的电位焊盘对应于栅极驱动电路的参考电位。

3. 发明申请

US20120068227A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120068227A1
公开(公告)日：2012-03-22
申请号：US13231514
申请日：2011-09-13
申请人： Masahiro HIKITA , Manabu YANAGIHARA
发明人： Masahiro HIKITA , Manabu YANAGIHARA
IPC分类号： H01L29/778
CPC分类号： H01L29/42316 , H01L29/1066 , H01L29/2003 , H01L29/518 , H01L29/7786
摘要： A normally off semiconductor device with a reduced off-state leakage current, which is applicable to a power switching element, includes: a substrate; an undoped GaN layer formed above the substrate; an undoped AlGaN layer formed on the undoped GaN layer; a source electrode and a drain electrode, formed on the undoped GaN layer or the undoped AlGaN layer; a P-type GaN layer formed on the undoped AlGaN layer and disposed between the source electrode and the drain electrode; and a gate electrode formed on the P-type GaN layer, wherein the undoped GaN layer includes an active region including a channel and an inactive region not including the channel, and the P-type GaN layer is disposed to surround the source electrode.
摘要翻译：具有减小的截止状态漏电流的常闭半导体器件，其适用于功率开关元件，包括：衬底; 在衬底上形成未掺杂的GaN层; 在未掺杂的GaN层上形成未掺杂的AlGaN层; 源电极和漏电极，形成在未掺杂的GaN层或未掺杂的AlGaN层上; 形成在未掺杂的AlGaN层上并设置在源电极和漏电极之间的P型GaN层; 以及形成在所述P型GaN层上的栅电极，其中所述未掺杂的GaN层包括包括沟道的有源区和不包括所述沟道的非活性区，并且所述P型GaN层设置为围绕所述源电极。

4. 发明申请

US20110114967A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20110114967A1
公开(公告)日：2011-05-19
申请号：US13010238
申请日：2011-01-20
申请人： Masahiro HIKITA , Tetsuzo UEDA , Manabu YANAGIHARA , Yasuhiro UEMOTO , Tsuyoshi TANAKA
发明人： Masahiro HIKITA , Tetsuzo UEDA , Manabu YANAGIHARA , Yasuhiro UEMOTO , Tsuyoshi TANAKA
IPC分类号： H01L29/205 , H01L29/78
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/432 , H01L29/66462
摘要： A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer formed over the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a larger band gap energy than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer and including a p-type nitride semiconductor with at least a single-layer structure; a gate electrode formed on the third nitride semiconductor layer; and a source electrode and a drain electrode formed in regions located on both sides of the gate electrode, respectively. The third nitride semiconductor layer has a thickness greater in a portion below the gate electrode than in a portion below the side of the gate electrode.
摘要翻译：氮化物半导体器件包括：衬底; 形成在所述基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更大的带隙能量的第二氮化物半导体层; 形成在所述第二氮化物半导体层上并且包括具有至少单层结构的p型氮化物半导体的第三氮化物半导体层; 形成在所述第三氮化物半导体层上的栅电极; 以及分别形成在位于栅电极两侧的区域中的源电极和漏电极。所述第三氮化物半导体层的厚度比所述栅极电极侧的部分的厚度大。

5. 发明申请

US20100244045A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100244045A1
公开(公告)日：2010-09-30
申请号：US12795143
申请日：2010-06-07
申请人： Manabu YANAGIHARA , Kazushi Nakazawa , Tsuyoshi Tanaka
发明人： Manabu YANAGIHARA , Kazushi Nakazawa , Tsuyoshi Tanaka
IPC分类号： H01L29/20
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/7787 , H01L29/872
摘要： A semiconductor device includes a first semiconductor layer which is formed above a substrate, a Schottky electrode and an ohmic electrode which are formed on the first semiconductor layer to be spaced from each other and a second semiconductor layer which is formed to cover the first semiconductor layer with the Schottky electrode and the ohmic electrode exposed. The second semiconductor layer has a larger band gap than that of the first semiconductor layer.
摘要翻译：半导体器件包括形成在衬底上的第一半导体层，形成在第一半导体层上彼此间隔开的肖特基电极和欧姆电极以及形成为覆盖第一半导体层的第二半导体层肖特基电极和欧姆电极暴露。第二半导体层具有比第一半导体层更大的带隙。

6. 发明申请

US20120061729A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20120061729A1
公开(公告)日：2012-03-15
申请号：US13295762
申请日：2011-11-14
申请人： Daisuke SHIBATA , Manabu YANAGIHARA , Yasuhiro UEMOTO
发明人： Daisuke SHIBATA , Manabu YANAGIHARA , Yasuhiro UEMOTO
IPC分类号： H01L29/778 , H01L21/20
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/2003 , H01L29/66462 , H01L29/66893 , H01L29/808
摘要： A nitride semiconductor device includes a semiconductor layer stack including a first nitride semiconductor layer and a second nitride semiconductor layer stacked in this order on a substrate. A p-type third nitride semiconductor layer is selectively formed on the semiconductor layer stack, and a gate electrode is formed on the third nitride semiconductor layer. A first ohmic electrode and a second ohmic electrode are formed on regions of the semiconductor layer stack located at both sides of the third nitride semiconductor layer, respectively. A first gate electrode forms a Schottky contact with the third nitride semiconductor layer.
摘要翻译：氮化物半导体器件包括在衬底上依次堆叠的第一氮化物半导体层和第二氮化物半导体层的半导体层堆叠。在半导体层堆叠上选择性地形成p型第三氮化物半导体层，在第三氮化物半导体层上形成栅电极。分别在位于第三氮化物半导体层两侧的半导体层堆叠的区域上形成第一欧姆电极和第二欧姆电极。第一栅电极与第三氮化物半导体层形成肖特基接触。

7. 发明申请

US20080211567A1 BIDIRECTIONAL SWITCH AND METHOD FOR DRIVING THE SAME 有权
标题翻译：双向开关及其驱动方法
公开(公告)号：US20080211567A1
公开(公告)日：2008-09-04
申请号：US12020163
申请日：2008-01-25
申请人： Tatsuo MORITA , Manabu YANAGIHARA , Hidetoshi ISHIDA , Yasuhiro UEMOTO , Manabu INOUE
发明人： Tatsuo MORITA , Manabu YANAGIHARA , Hidetoshi ISHIDA , Yasuhiro UEMOTO , Manabu INOUE
IPC分类号： H03K17/687
CPC分类号： H03K17/687 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/41758 , H01L29/7787 , H03K17/302 , H03K17/567 , H03K17/6877 , H03K17/74 , H03K17/78 , H03K17/795 , H03K2217/0036
摘要： A bidirectional switch includes a field-effect transistor having a first ohmic electrode, a second ohmic electrode and a gate electrode, and a control circuit for controlling between a conduction state and a cut-off state by applying a bias voltage to the gate electrode. The control circuit applies the bias voltage from the first ohmic electrode as a reference when a potential of the second ohmic electrode is higher than the potential of the first ohmic electrode, and applies the bias voltage from the second ohmic electrode as a reference when the potential of the second electrode is lower than the potential of the first ohmic electrode.
摘要翻译：双向开关包括具有第一欧姆电极，第二欧姆电极和栅电极的场效应晶体管，以及通过向栅电极施加偏压来控制导通状态和截止状态的控制电路。当第二欧姆电极的电位高于第一欧姆电极的电位时，控制电路施加来自第一欧姆电极的偏置电压作为参考，并且当第二欧姆电极的电位为电位时施加来自第二欧姆电极的偏置电压作为参考的第二电极的电位低于第一欧姆电极的电位。

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