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1. 发明授权

US09190168B2 Magnetic memory and manufacturing method thereof 有权
标题翻译：磁记忆及其制造方法
公开(公告)号：US09190168B2
公开(公告)日：2015-11-17
申请号：US13425471
申请日：2012-03-21
申请人： Shiho Nakamura , Tsuyoshi Kondo , Hirofumi Morise , Junichi Akiyama
发明人： Shiho Nakamura , Tsuyoshi Kondo , Hirofumi Morise , Junichi Akiyama
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1675
摘要： A magnetic memory includes a first magnetic line, an electrode, a write-in portion, a second magnetic line, and a spin-wave generator. The first magnetic line has a plurality of magnetic domains and domain walls, the domain wall separating the magnetic domain. The electrode is provided to both ends of the first magnetic line. The write-in portion is provided adjacent to the first magnetic line. The second magnetic line is provided so that the second magnetic line intersects with the first magnetic line. The spin-wave generator provided to one end of the second magnetic line. The spin-wave detector provided to the other end of the second magnetic line.
摘要翻译：磁存储器包括第一磁线，电极，写入部分，第二磁线和自旋波发生器。第一磁线具有多个磁畴和畴壁，畴壁分离磁畴。电极设置在第一磁力线的两端。写入部分设置成与第一磁线相邻。第二磁线被设置成使得第二磁线与第一磁线相交。提供给第二磁线的一端的自旋波发生器。旋转波检测器设置在第二磁线的另一端。

2. 发明授权

US08634237B2 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US08634237B2
公开(公告)日：2014-01-21
申请号：US13422030
申请日：2012-03-16
申请人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
发明人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
IPC分类号： G11C11/14
CPC分类号： G11C11/14 , G11C11/161 , G11C11/1675
摘要： A magnetic memory device comprises a magnetic wire extending in a first direction, a pair of first electrodes operable to pass a current through the magnetic wire in the first direction or in an opposite direction to the first direction, a first insulating layer provided on the magnetic wire in a second direction being substantially perpendicular to the first direction, a plurality of second electrodes provided on the first insulating layer and provided at specified interval in the second direction, and a third electrode electrically connected to the plurality of second electrodes.
摘要翻译：一种磁存储器件包括沿第一方向延伸的磁线，一对第一电极，可操作以使电流沿第一方向或与第一方向相反的方向通过磁线;第一绝缘层，设置在磁性在第二方向上的导线基本上垂直于第一方向;多个第二电极，设置在第一绝缘层上，并在第二方向上以规定的间隔设置，第三电极与多个第二电极电连接。

3. 发明授权

US08611142B2 Magnetic recording device and magnetic recording apparatus 失效
标题翻译：磁记录装置和磁记录装置
公开(公告)号：US08611142B2
公开(公告)日：2013-12-17
申请号：US13299130
申请日：2011-11-17
申请人： Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida , Akira Kikitsu
发明人： Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida , Akira Kikitsu
IPC分类号： G11C11/15 , G11C11/16 , G11C11/14 , G11C11/02
CPC分类号： G11C11/22 , G11B5/66 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： An example magnetic recording device includes a laminated body. The laminated body includes a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer with a variable magnetization direction; and a fourth ferromagnetic layer with a magnetization substantially fixed in a second direction, wherein at least one of the first and second direction is generally perpendicular to the film plane. The magnetization direction of the second ferromagnetic layer is determinable in response to the orientation of a current, by passing the current in a direction generally perpendicular to the film plane of the layers of the laminated body and the magnetization of the third ferromagnetic layer is able to undergo precession by passing the current.
摘要翻译：示例性磁记录装置包括层压体。层叠体包括具有在第一方向上基本固定的磁化的第一铁磁层; 具有可变磁化方向的第二铁磁层; 设置在所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 具有可变磁化方向的第三铁磁层; 以及具有在第二方向上基本固定的磁化的第四铁磁层，其中所述第一和第二方向中的至少一个大致垂直于所述膜平面。第二铁磁层的磁化方向可以通过使电流沿大致垂直于层叠体的层的膜平面的方向流过电流的方向来确定，并且第三铁磁层的磁化能够通过传递目前进行进攻。

4. 发明申请

US20120242438A1 MAGNETIC OSCILLATION ELEMENT AND SPIN WAVE DEVICE 有权
标题翻译：磁振动元件和旋转波形装置
公开(公告)号：US20120242438A1
公开(公告)日：2012-09-27
申请号：US13238631
申请日：2011-09-21
申请人： Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yoshinari Kurosaki
发明人： Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yoshinari Kurosaki
IPC分类号： H01F7/02
CPC分类号： H01F10/329 , G01R33/093 , G01R33/1284 , G11C11/161 , H01F10/3295 , H01L43/08 , H03B15/006
摘要： According to one embodiment, a magnetic oscillation element includes a first electrode/a second magnetic layer/a nonmagnetic spacer layer/a first magnetic layer/ a second electrode, stacked in this order. The first magnetic layer has variable magnetization direction. The second magnetic layer has fixed magnetization direction. A thickness of the first magnetic layer in a direction connecting the first and second electrodes is greater than 2 times a spin penetration depth of the first magnetic layer. The thickness of the first magnetic layer is less than a maximum width of the second electrode. The first magnetic layer has edge portion provided outside the first surface when viewed along the direction. A width of the edge portion in a direction perpendicular to a tangent of an edge of the second electrode is not less than an exchange length of the first magnetic layer.
摘要翻译：根据一个实施例，磁振荡元件包括依次堆叠的第一电极/第二磁性层/非磁性间隔层/第一磁性层/第二电极。第一磁性层具有可变的磁化方向。第二磁性层具有固定的磁化方向。连接第一和第二电极的方向上的第一磁性层的厚度大于第一磁性层的自旋穿透深度的2倍。第一磁性层的厚度小于第二电极的最大宽度。当沿该方向观察时，第一磁性层具有设置在第一表面之外的边缘部分。边缘部分在与第二电极的边缘的切线垂直的方向上的宽度不小于第一磁性层的交换长度。

5. 发明授权

US07733145B2 Nonvolatile latch circuit and nonvolatile flip-flop circuit 有权
标题翻译：非易失性锁存电路和非易失性触发器电路
公开(公告)号：US07733145B2
公开(公告)日：2010-06-08
申请号：US11848864
申请日：2007-08-31
申请人： Keiko Abe , Takahiro Hirai , Shiho Nakamura , Hirofumi Morise , Mototsugu Hamada
发明人： Keiko Abe , Takahiro Hirai , Shiho Nakamura , Hirofumi Morise , Mototsugu Hamada
IPC分类号： H03K3/00 , H03K3/45
CPC分类号： G11C11/16 , G11C14/0081
摘要： A nonvolatile latch circuit includes: a first gate part controlling to load or intercept an input signal based on a gate signal; a first logic gate functioning as an inverter or a gate outputting a constant voltage in response to the first control signal; a second logic gate functioning as an inverter or a gate outputting the constant voltage in response to the first control signal; a second gate part controlling to load or intercept the output of the second logic gate based on an inverted signal of the gate signal and sends the output of the second logic gate to an first input terminal of the first logic gate; and first and second injection type MTJ elements provided between the driving power supply and the first and second logic gates and changing in resistance depending upon a current flow direction.
摘要翻译：非易失性锁存电路包括：第一栅极部分，其基于栅极信号控制输入信号的加载或截取; 用作反相器的第一逻辑门或响应于第一控制信号输出恒定电压的栅极; 用作反相器的第二逻辑门或响应于第一控制信号输出恒定电压的栅极; 第二栅极部分，用于基于所述栅极信号的反相信号来加载或截取所述第二逻辑门的输出，并将所述第二逻辑门的输出发送到所述第一逻辑门的第一输入端; 以及设置在驱动电源和第一和第二逻辑门之间的第一和第二注入型MTJ元件，并根据电流流动方向改变电阻。

6. 发明授权

US07598578B2 Magnetic element and signal processing device 失效
标题翻译：磁性元件和信号处理装置
公开(公告)号：US07598578B2
公开(公告)日：2009-10-06
申请号：US11390475
申请日：2006-03-28
申请人： Shiho Nakamura , Hirofumi Morise , Shigeru Haneda
发明人： Shiho Nakamura , Hirofumi Morise , Shigeru Haneda
IPC分类号： H01L41/00
CPC分类号： H01F10/3268 , B82Y25/00 , G11C11/16 , H01F10/3254 , H01F10/329 , H01L29/66984 , H01L43/08 , Y10S977/933
摘要： A magnetic element includes a channel layer, a first magnetic electrode which is in contact with the channel layer, a second magnetic electrode which is in contact with the channel layer and is insulated from the first magnetic electrode, a first intermediate layer which is provided adjacent to the first magnetic electrode and has a first insulating layer, a first magnetic layer which is provided in contact with a surface of the first intermediate layer on an opposite side to a surface contacting the first magnetic electrode to transfer magnetization to the first magnetic electrode, a first electrode which is connected to the first magnetic electrode, and a second electrode which is connected to the second magnetic electrode, at least one of the first electrode and the second electrode outputting a first signal which changes depending on a magnetic arrangement of the first magnetic electrode and the second magnetic electrode.
摘要翻译：磁性元件包括沟道层，与沟道层接触的第一磁电极，与沟道层接触并与第一磁极绝缘的第二磁极，邻近设置的第一中间层并且具有第一绝缘层，第一磁性层与第一中间层的与第一磁极接触的表面的相对侧与第一中间层的表面接触以将磁化转移到第一磁极，连接到第一磁极的第一电极和连接到第二磁极的第二电极，第一电极和第二电极中的至少一个输出根据第一电极的磁性排列而变化的第一信号磁极和第二磁极。

7. 发明授权

US07561385B2 Magneto-resistive element in which a free layer includes ferromagnetic layers and a non-magnetic layer interposed therebetween 有权
标题翻译：其中自由层包括铁磁层和插入其间的非磁性层的磁阻元件
公开(公告)号：US07561385B2
公开(公告)日：2009-07-14
申请号：US11087762
申请日：2005-03-24
申请人： Shiho Nakamura , Shigeru Haneda
发明人： Shiho Nakamura , Shigeru Haneda
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , G11B5/39
摘要： A magneto-resistive element comprising a free layer having two ferromagnetic layers having a nonmagnetic layer interposed therebetween are coupled with each other in an anti-ferromagnetic manner, a difference between an absolute value of a total of magnetizations of at least one ferromagnetic layer in which the magnetization direction is a first direction and an absolute value of a total of magnetizations of at least one ferromagnetic layer in which the magnetization direction is a second direction which is opposite to the first direction is equal to or smaller than 5×10−15 emu, and planes parallel to a substrate of the ferromagnetic layers are smaller as the planes are distant from the substrate.
摘要翻译：包括具有插入其间具有非磁性层的两个铁磁层的自由层的磁阻元件以反铁磁方式彼此耦合，其中至少一个铁磁层的总磁化的绝对值之间的差异在其中磁化方向是第一方向，并且其中磁化方向是与第一方向相反的第二方向的至少一个铁磁层的磁化总和的绝对值等于或小于5×10-15emu，并且平行于铁磁性层的基板的平面随着平面远离基板而变小。

8. 发明申请

US20070228501A1 Magnetic recording element and magnetic memory 有权
标题翻译：磁记录元件和磁存储器
公开(公告)号：US20070228501A1
公开(公告)日：2007-10-04
申请号：US11725570
申请日：2007-03-20
申请人： Shiho Nakamura , Hirofumi Morise
发明人： Shiho Nakamura , Hirofumi Morise
IPC分类号： H01L43/00
CPC分类号： H01L43/10 , B82Y25/00 , G01R33/093 , G11C16/16 , H01F10/3227 , H01F10/3254 , H01F10/3286 , H01L27/222 , H01L27/228 , H01L43/08
摘要： A magnetic recording element according to an example of the present invention includes a magnetic free layer whose magnetization is variable in accordance with a current direction passing through a film and whose direction of easy axis of magnetization is a direction perpendicular to a film plane, a magnetic pinned layer whose magnetization is fixed to a direction perpendicular to the film plane, and a non-magnetic barrier layer between the magnetic free layer and the magnetic pinned layer. In the magnetic free layer, a relation between a saturated magnetization Ms (emu/cc) and an anisotropy field Han (Oe) satisfies Han>12.57 Ms, and Han
摘要翻译：根据本发明实施例的磁记录元件包括磁化自由层，其磁化根据通过膜的电流方向是可变的，并且易磁化轴方向是垂直于膜平面的方向，磁性其磁化固定到垂直于膜平面的方向上的固定层，以及在磁性自由层和磁性固定层之间的非磁性阻挡层。在磁性自由层中，饱和磁化强度Ms（emu / cc）与各向异性场Han（Oe）之间的关系满足Han> 12.57 Ms，而Han <1.2 E 7 MS -1 +12.57 女士。

9. 发明申请

US20070195469A1 Magnetoresistive effect element, magnetic head, magnetic reproducing apparatus, and manufacturing method of magnetoresistive effect element 审中-公开
标题翻译：磁阻效应元件，磁头，磁再现装置和磁阻效应元件的制造方法
公开(公告)号：US20070195469A1
公开(公告)日：2007-08-23
申请号：US11595996
申请日：2006-11-13
申请人： Masahiro Takashita , Masayuki Takagishi , Hitoshi Iwasaki , Shiho Nakamura
发明人： Masahiro Takashita , Masayuki Takagishi , Hitoshi Iwasaki , Shiho Nakamura
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3932
摘要： A magnetoresistive effect element includes: a magnetoresistive effect film including a magnetization free layer, a magnetization fixed layer, and an intermediate layer placed between them; a magnetic coupling layer; a ferromagnetic layer; an antiferromagnetic layer; a bias mechanism portion applying a bias magnetic field to the magnetization free layer in a direction nearly parallel to a film surface of the magentoresistive effect film and nearly perpendicular to a magnetization direction of the magnetization fixed layer; and a pair of electrodes to pass a current in a direction going from the magnetization fixed layer to the magnetization free layer, and its bias point is more than 50%.
摘要翻译：磁阻效应元件包括：包含磁化自由层，磁化固定层和置于它们之间的中间层的磁阻效应膜; 磁耦合层; 铁磁层; 反铁磁层; 偏置机构部分，沿着与磁阻效应膜的膜表面几乎平行的方向，几乎垂直于磁化固定层的磁化方向，向无磁化层施加偏置磁场; 以及一对电极，使电流沿着从磁化固定层向磁化自由层的方向通过，其偏压点大于50％。

10. 发明申请

US20060002185A1 Magnetic cell and magnetic memory 有权
公开(公告)号：US20060002185A1
公开(公告)日：2006-01-05
申请号：US11213865
申请日：2005-08-30
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell comprises: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.

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