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1. 发明申请

US20100028482A1 Injection Molding Machine and Heat-Insulating Structure of Barrel Thereof 失效
标题翻译：注射成型机及其保温隔热结构
公开(公告)号：US20100028482A1
公开(公告)日：2010-02-04
申请号：US12512572
申请日：2009-07-30
申请人： Chiu-ting Yu , Hsien-chih Wu , Yu-xiu Wu , Bo-tao Jiang , Shih-chi Hsu
发明人： Chiu-ting Yu , Hsien-chih Wu , Yu-xiu Wu , Bo-tao Jiang , Shih-chi Hsu
IPC分类号： B29C45/72
CPC分类号： B29C45/62
摘要： This invention discloses an injection molding machine and a heat-insulating structure of a barrel thereof. The heat-insulating structure covers the barrel of the injection molding machine. The heat-insulating structure includes a plurality of heat-insulating units and a plurality of heat-resistant interlinings. The heat-insulating units are disposed on an outer surface of the barrel in turn along an axial direction of the barrel. The heat-resistant interlinings are located between the heat-insulating units and connect the heat-insulating units, respectively. Each heat-insulating unit includes a heat-resistant layer, a heat-insulating material layer, and an insulating layer in turn. The heat-resistant layer covers the outer surface of the barrel of the injection molding machine.
摘要翻译：本发明公开了一种注射成型机及其筒体的隔热结构体。绝热结构覆盖注射成型机的筒体。绝热结构包括多个绝热单元和多个耐热衬里。绝热单元沿着筒的轴向依次设置在筒的外表面上。耐热衬里位于隔热单元之间，分别连接绝热单元。每个隔热单元依次包括耐热层，绝热材料层和绝缘层。耐热层覆盖注射成型机的筒体的外表面。

2. 发明授权

US06221786B1 Methods for isolating interconnects 有权
标题翻译：隔离互连的方法
公开(公告)号：US06221786B1
公开(公告)日：2001-04-24
申请号：US09213425
申请日：1998-12-17
申请人： Shih-Chi Hsu , Tse Yao Huang
发明人： Shih-Chi Hsu , Tse Yao Huang
IPC分类号： H01L213063
CPC分类号： H01L21/7682
摘要： This present invention provides methods for isolating interconnects characterized by first isolating the top and bottom interconnects with an IMD consisting of a traditional low-k dielectric material, then dissolving the low-k material with a suitable solvent and using air or a noble gas instead of the traditional low-k dielectric material to isolate the interconnects.
摘要翻译：本发明提供了用于隔离互连的方法，其特征在于首先用由传统的低k介电材料组成的IMD隔离顶部和底部互连，然后用合适的溶剂溶解低k材料，并使用空气或惰性气体代替传统的低k介质材料隔离互连。

3. 发明授权

US06140179A Method of forming a crown capacitor for a DRAM cell 有权
标题翻译：形成用于DRAM单元的表冠电容器的方法
公开(公告)号：US06140179A
公开(公告)日：2000-10-31
申请号：US326651
申请日：1999-06-07
申请人： Yinan Chen , Shih-chi Hsu , Tse Yao Huang
发明人： Yinan Chen , Shih-chi Hsu , Tse Yao Huang
IPC分类号： H01L21/02 , H01L27/108 , H01L21/8242
CPC分类号： H01L28/82 , H01L27/10814 , H01L28/87 , H01L28/91
摘要： The present invention discloses a method of forming a crown capacitor for a DRAM cell. An etching method having different selectivity between the BPSG and silicon oxynitride layer is applied to form a sacrificial structure with a concanovenex sidewall. Using the sacrificial structure as a mold, a high capacitance crown capacitor is obtained.
摘要翻译：本发明公开了一种形成用于DRAM单元的表冠电容器的方法。施加在BPSG和氮氧化硅层之间具有不同选择性的蚀刻方法以形成具有锥形侧壁的牺牲结构。使用牺牲结构作为模具，获得高电容冠电容器。

4. 发明授权

US6133089A Method for fabricating a DRAM capacitor 有权
标题翻译：制造DRAM电容器的方法
公开(公告)号：US6133089A
公开(公告)日：2000-10-17
申请号：US314201
申请日：1999-05-19
申请人： Tse Yao Huang , Shih-Chi Hsu , Yinan Chen , Hsing-Chuan Tsai
发明人： Tse Yao Huang , Shih-Chi Hsu , Yinan Chen , Hsing-Chuan Tsai
IPC分类号： H01L21/02 , H01L21/8242
CPC分类号： H01L28/91 , H01L27/10852
摘要： A method for fabricating a DRAM capacitor is described. First, a semiconductor substrate having a capacitor contact is provided. Next, a first polysilicon layer is formed. Then, an oxide layer and a silicon oxy-nitride layer are sequentially formed over the first polysilicon layer. Next, the silicon oxy-nitride layer, the oxide layer, and the first polysilicon layer are selectively etched to leave a rectangular stack layer. Afterwards, the oxide layer and the first polysilicon layer of the rectangular stack layer are etched from the sidewall direction to leave a double T-shaped stack layer. Then, second polysilicon layer is formed on the upper surface and the sidewall of the double T-shaped stack layer. Next, the second polysilicon layer is selectively removed. The remaining second and first polysilicon layer are used as the bottom electrode. Afterwards, a dielectric layer and an upper electrode are formed on the bottom electrode.
摘要翻译：描述制造DRAM电容器的方法。首先，提供具有电容器触点的半导体衬底。接下来，形成第一多晶硅层。然后，在第一多晶硅层上依次形成氧化物层和氮氧化硅层。接下来，选择性地蚀刻硅氮氧化物层，氧化物层和第一多晶硅层以留下矩形堆叠层。然后，从侧壁方向蚀刻矩形堆叠层的氧化物层和第一多晶硅层，留下双T型堆叠层。然后，在双T型堆叠层的上表面和侧壁上形成第二多晶硅层。接下来，选择性地去除第二多晶硅层。剩余的第二和第一多晶硅层用作底部电极。之后，在底部电极上形成电介质层和上部电极。

5. 发明授权

US07841853B2 Injection molding machine having a heat insulated barrel 失效
标题翻译：注塑机具有隔热桶
公开(公告)号：US07841853B2
公开(公告)日：2010-11-30
申请号：US12512572
申请日：2009-07-30
申请人： Chiu-ting Yu , Hsien-chih Wu , Yu-xiu Wu , Bo-tao Jiang , Shih-chi Hsu
发明人： Chiu-ting Yu , Hsien-chih Wu , Yu-xiu Wu , Bo-tao Jiang , Shih-chi Hsu
IPC分类号： B29C45/74
CPC分类号： B29C45/62
摘要： This invention discloses an injection molding machine and a heat-insulating structure of a barrel thereof. The heat-insulating structure covers the barrel of the injection molding machine. The heat-insulating structure includes a plurality of heat-insulating units and a plurality of heat-resistant interlinings. The heat-insulating units are disposed on an outer surface of the barrel in turn along an axial direction of the barrel. The heat-resistant interlinings are located between the heat-insulating units and connect the heat-insulating units, respectively. Each heat-insulating unit includes a heat-resistant layer, a heat-insulating material layer, and an insulating layer in turn. The heat-resistant layer covers the outer surface of the barrel of the injection molding machine.
摘要翻译：本发明公开了一种注射成型机及其筒体的隔热结构体。绝热结构覆盖注射成型机的筒体。绝热结构包括多个绝热单元和多个耐热衬里。绝热单元沿着筒的轴向依次设置在筒的外表面上。耐热衬里位于隔热单元之间，分别连接绝热单元。每个隔热单元依次包括耐热层，绝热材料层和绝缘层。耐热层覆盖注射成型机的筒体的外表面。

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