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1. 发明申请

US20120056228A1 LED CHIP MODULES, METHOD FOR PACKAGING THE LED CHIP MODULES, AND MOVING FIXTURE THEREOF 审中-公开
标题翻译： LED芯片模块，包装LED芯片模块的方法及其移动装置
公开(公告)号：US20120056228A1
公开(公告)日：2012-03-08
申请号：US13226147
申请日：2011-09-06
申请人： Ray-Hua Horng , Jhih-Sin Hong , Shih-Feng Shao , Heng Liu
发明人： Ray-Hua Horng , Jhih-Sin Hong , Shih-Feng Shao , Heng Liu
IPC分类号： H01L33/60 , B25J15/06
CPC分类号： H01L33/486 , H01L24/32 , H01L33/60 , H01L2224/48091 , H01L2224/49107 , H01L2933/0033 , H01L2924/00014
摘要： A method for packaging LED chip modules is provided. First, a first sacrificial layer is disposed on a substrate. Afterwards, LED chips are synchronously disposed on the first sacrificial layer before the first sacrificial layer cures. Next, a first material, a second sacrificial layer, and a second material are used to form a support layer on the first sacrificial layer. The first sacrificial layer and the second sacrificial layer are then removed, so that LED chip modules are obtained, wherein each LED chip module has a corresponding support layer. Furthermore, a moving fixture is provided to synchronously remove chips from a wafer and dispose them on the sacrificial layer.
摘要翻译：提供了一种用于封装LED芯片模块的方法。首先，将第一牺牲层设置在基板上。之后，在第一牺牲层固化之前，LED芯片被同步地设置在第一牺牲层上。接下来，使用第一材料，第二牺牲层和第二材料在第一牺牲层上形成支撑层。然后去除第一牺牲层和第二牺牲层，从而获得LED芯片模块，其中每个LED芯片模块具有对应的支撑层。此外，提供移动夹具以从晶片同步地移除芯片并将其布置在牺牲层上。

2. 发明申请

US20070077676A1 METHOD OF FABRICATING PRESSURE SENSOR 审中-公开
标题翻译：压力传感器的制作方法
公开(公告)号：US20070077676A1
公开(公告)日：2007-04-05
申请号：US11308305
申请日：2006-03-15
申请人： Shih-Feng Shao , Chen-Hsiung Yang
发明人： Shih-Feng Shao , Chen-Hsiung Yang
IPC分类号： H01L21/46
CPC分类号： G01L9/0054
摘要： A method of fabricating a pressure sensor. An SOI wafer having a single crystalline silicon layer, an insulating layer and a silicon substrate is provided. The single crystalline silicon layer has a pressure sensing device. The silicon substrate and the insulating layer corresponding to the pressure sensing device are removed to form a cavity. A bonding substrate is adhered to the silicon substrate with a bonding layer.
摘要翻译：一种压力传感器的制造方法。提供了具有单晶硅层，绝缘层和硅衬底的SOI晶片。单晶硅层具有压力感测装置。对应于压力感测装置的硅衬底和绝缘层被去除以形成空腔。接合衬底用粘合层粘合到硅衬底上。

3. 发明申请

US20130105825A1 LIGHT EMITTING DIODE ARRAY 审中-公开
标题翻译：发光二极管阵列
公开(公告)号：US20130105825A1
公开(公告)日：2013-05-02
申请号：US13450665
申请日：2012-04-19
申请人： Heng Liu , Shih-Feng Shao
发明人： Heng Liu , Shih-Feng Shao
IPC分类号： H01L33/08
CPC分类号： H01L25/0753 , H01L33/08 , H01L33/20 , H01L33/62 , H01L2224/48091 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode array comprises a plurality of light emitting diode units connected in series and arranged for forming an array with n rows and m columns. At least one of the numbers m and n of the array is an odd number.
摘要翻译：发光二极管阵列包括串联连接并被布置成用于形成具有n行和m列的阵列的多个发光二极管单元。阵列的数字m和n中的至少一个是奇数。

4. 发明申请

US20130056774A1 LENS, PACKAGE AND PACKAGING METHOD FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：用于半导体发光器件的透镜，封装和封装方法
公开(公告)号：US20130056774A1
公开(公告)日：2013-03-07
申请号：US13311739
申请日：2011-12-06
申请人： Jhih-Sin HONG , Shih-Feng SHAO
发明人： Jhih-Sin HONG , Shih-Feng SHAO
IPC分类号： H01L33/58 , F21V5/04 , H01L33/52
CPC分类号： H01L33/54 , H01L2933/005
摘要： This invention provides lenses having a pendant shape profile and their applications and forming methods. In an embodiment, the lenses are used to encapsulate one or more light-emitting diode chips so as to increase the light extraction efficiency.
摘要翻译：本发明提供了具有侧面形状轮廓及其应用和形成方法的镜片。在一个实施例中，透镜用于封装一个或多个发光二极管芯片，以便提高光提取效率。

5. 发明授权

US07622334B2 Wafer-level packaging cutting method capable of protecting contact pads 失效
标题翻译：晶圆级封装切割方法能够保护接触垫
公开(公告)号：US07622334B2
公开(公告)日：2009-11-24
申请号：US12100392
申请日：2008-04-09
申请人： Chun-Wei Tsai , Shih-Feng Shao
发明人： Chun-Wei Tsai , Shih-Feng Shao
IPC分类号： H01L21/44
CPC分类号： B81C1/00873 , B81C2203/0118 , H01L23/10 , H01L23/3114 , H01L2924/0002 , H01L2924/00
摘要： A cutting method for wafer-level packaging capable of protecting the contact pad, in which several cavities and precutting lines are formed at the front surface of a cap wafer, and the depth of each precutting line is lesser than the thickness of the cap wafer, followed by the bonding of the cap wafer to the device wafer, which has several devices and several bonding pads disposed on the surface of the device wafer, followed by performing a wafer dicing process, along the precutting lines cutting through the cap wafer, and after removing a portion of the cap wafer that is not bonded to the device wafer, for exposing the bonding pads at the surface of the device wafer, and finally performing a dicing process for forming many packaged dies.
摘要翻译：一种用于晶片级封装的切割方法，其能够保护接触焊盘，其中在盖晶片的前表面处形成有多个空腔和预切割线，并且每个预切割线的深度小于盖晶片的厚度，接着将盖晶片与装置晶片的接合，该器件晶片具有设置在器件晶片表面上的若干器件和多个焊盘，随后沿切割穿过盖晶片的预切割线进行晶片切割处理，之后去除未结合到器件晶片的盖晶片的一部分，用于暴露器件晶片表面处的接合焊盘，并且最后进行用于形成许多封装管芯的切割工艺。

6. 发明授权

US07598125B2 Method for wafer level packaging and fabricating cap structures 失效
标题翻译：晶圆级封装和制造帽结构的方法
公开(公告)号：US07598125B2
公开(公告)日：2009-10-06
申请号：US11426573
申请日：2006-06-26
申请人： Shih-Feng Shao , Ming-Yen Chiu
发明人： Shih-Feng Shao , Ming-Yen Chiu
IPC分类号： H01L21/00
CPC分类号： H01L23/04 , B81B7/0041 , B81B2201/047 , H01L21/4817 , H01L2924/0002 , H01L2924/16235 , H01L2924/00
摘要： A cap wafer with cavities is etched through areas not covered by a patterned photoresist to form a plurality of openings. The cap wafer is bonded to a transparent wafer at the surface having the cavities and is segmented around the cavities to form a plurality of cap structures. The cap structures are hermetically sealed to a device wafer to form hermetic windows over devices and pads located on the device wafer.
摘要翻译：通过未被图案化光致抗蚀剂覆盖的区域蚀刻具有空腔的盖片晶片，以形成多个开口。盖晶片在具有空腔的表面处结合到透明晶片，并且围绕空腔分段以形成多个帽结构。盖结构被密封到器件晶片，以在位于器件晶片上的器件和焊盘上形成密封窗。

7. 发明申请

US20090061598A1 WAFER-LEVEL PACKAGING CUTTING METHOD CAPABLE OF PROTECTING CONTACT PADS 失效
标题翻译：具有保护接触垫的水平包装切割方法
公开(公告)号：US20090061598A1
公开(公告)日：2009-03-05
申请号：US12100392
申请日：2008-04-09
申请人： Chun-Wei Tsai , Shih-Feng Shao
发明人： Chun-Wei Tsai , Shih-Feng Shao
IPC分类号： H01L21/00
CPC分类号： B81C1/00873 , B81C2203/0118 , H01L23/10 , H01L23/3114 , H01L2924/0002 , H01L2924/00
摘要： A cutting method for wafer-level packaging capable of protecting the contact pad, in which several cavities and precutting lines are formed at the front surface of a cap wafer, and the depth of each precutting line is lesser than the thickness of the cap wafer, followed by the bonding of the cap wafer to the device wafer, which has several devices and several bonding pads disposed on the surface of the device wafer, followed by performing a wafer dicing process, along the precutting lines cutting through the cap wafer, and after removing a portion of the cap wafer that is not bonded to the device wafer, for exposing the bonding pads at the surface of the device wafer, and finally performing a dicing process for forming many packaged dies.
摘要翻译：一种用于晶片级封装的切割方法，其能够保护接触焊盘，其中在盖晶片的前表面处形成有多个空腔和预切割线，并且每个预切割线的深度小于盖晶片的厚度，接着将盖晶片与器件晶片的接合，器件晶片具有多个器件和设置在器件晶片表面上的多个焊盘，随后沿切割穿过盖晶片的预切割线进行晶片切割处理，之后去除未结合到器件晶片的盖晶片的一部分，用于暴露器件晶片表面处的接合焊盘，并且最后进行用于形成许多封装管芯的切割工艺。

8. 发明授权

US07008821B1 Method of forming a wafer backside interconnecting wire 有权
标题翻译：形成晶片背面互连线的方法
公开(公告)号：US07008821B1
公开(公告)日：2006-03-07
申请号：US10904621
申请日：2004-11-19
申请人： Shih-Feng Shao , Chen-Hsiung Yang , Hsin-Ya Peng
发明人： Shih-Feng Shao , Chen-Hsiung Yang , Hsin-Ya Peng
IPC分类号： H01L21/48
CPC分类号： H01L24/05 , H01L23/3128 , H01L23/481 , H01L24/48 , H01L2224/04042 , H01L2224/05599 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01014 , H01L2924/01019 , H01L2924/01033 , H01L2924/01047 , H01L2924/014 , H01L2924/05042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要： A method of forming a wafer backside interconnecting wire includes forming a mask layer on the back surface, the mask layer including at least an opening corresponding to the bonding pad, performing a first etching process from the back surface to remove the wafer unprotected by the mask layer to form a recess, removing the mask layer, and forming an interconnecting wire on the back surface.
摘要翻译：形成晶片背面互连线的方法包括在背面形成掩模层，掩模层至少包括与焊盘对应的开口，从后表面进行第一蚀刻工艺以除去未被掩模保护的晶片以形成凹部，去除掩模层，以及在背面上形成互连丝。

9. 发明申请

US20050215029A1 Method for fixing wafer used in manufacturing procedure 审中-公开
标题翻译：用于制造过程中使用的晶片的方法
公开(公告)号：US20050215029A1
公开(公告)日：2005-09-29
申请号：US10972797
申请日：2004-10-25
申请人： Hsin-Ya Peng , Hsien-Lung Ho , Shih-Feng Shao
发明人： Hsin-Ya Peng , Hsien-Lung Ho , Shih-Feng Shao
IPC分类号： H01L21/44 , H01L21/50 , H01L21/68
CPC分类号： H01L21/6836 , H01L2221/68327
摘要： A method for fixing a wafer used in a manufacturing procedure is provided. The method includes steps of a) providing the wafer, a handling carrier, and a thermal release tape, wherein the wafer has a first and a second surfaces; b) adhering the thermal release tape between the first surface and the handling carrier for fixing the wafer on the handling carrier; c) performing the manufacturing procedure on the second surface; and d) separating the thermal release tape, the first surface and the handling carrier from one another above a specific temperature.
摘要翻译：提供了一种用于固定制造过程中使用的晶片的方法。该方法包括以下步骤：a）提供晶片，处理载体和热释放带，其中晶片具有第一和第二表面; b）将热释放带粘附在第一表面和处理载体之间，用于将晶片固定在处理载体上; c）在第二表面上执行制造程序; 以及d）将所述热释放带，所述第一表面和所述处理载体彼此隔开高于特定温度。

10. 发明申请

US20070161210A1 METHOD FOR WAFER LEVEL PACKAGING AND FABRICATING CAP STRUCTURES 失效
标题翻译：用于水平包装和织物盖结构的方法
公开(公告)号：US20070161210A1
公开(公告)日：2007-07-12
申请号：US11428409
申请日：2006-07-03
申请人： Shih-Feng Shao , Ming-Yen Chiu
发明人： Shih-Feng Shao , Ming-Yen Chiu
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L23/10 , B81C1/00269 , B81C2203/0118 , H01L21/50 , H01L27/14618 , H01L27/14632 , H01L27/14687 , H01L2924/16195 , H01L2924/16235
摘要： A cap wafer with patterned film formed thereon is etched through areas not covered by the patterned film to form a plurality of openings. Then, the cap wafer is bonded to a transparent wafer, and the cap wafer around the pattern film is segmented to form a plurality of cap structures. A device wafer with a plurality of devices and a plurality of contact pads electrically connected to the devices is subsequently provided. The cap structures and the device wafer are hermetically sealed to form a plurality of hermetic windows on the devices.
摘要翻译：在其上形成有图案化膜的盖晶片通过未被图案化膜覆盖的区域蚀刻以形成多个开口。然后，将盖晶片接合到透明晶片，并且围绕图案膜的盖晶片被分割以形成多个帽结构。随后提供具有多个器件的器件晶片和与器件电连接的多个接触焊盘。盖结构和器件晶片被气密地密封以在器件上形成多个密封窗。

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