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1. 发明授权

US07531457B2 Method of fabricating suspended structure 失效
标题翻译：制造悬挂结构的方法
公开(公告)号：US07531457B2
公开(公告)日：2009-05-12
申请号：US11561902
申请日：2006-11-21
申请人： Yu-Fu Kang , Chen-Hsiung Yang
发明人： Yu-Fu Kang , Chen-Hsiung Yang
IPC分类号： H01L21/20
CPC分类号： B81C1/0015 , B81C2201/0108 , B81C2201/0132
摘要： A method of fabricating a suspended structure. First, a substrate including a photoresist layer hardened by heat is provided. Subsequently, the hardened photoresist layer is etched so as to turn the photoresist layer into a predetermined edge profile. Thereafter, a structure layer is formed on parts of the substrate and parts of the photoresist layer. Next, a dry etching process is performed so as to remove the photoresist layer, and to turn the structure layer into a suspended structure.
摘要翻译：一种制造悬挂结构的方法。首先，提供包含通过热硬化的光致抗蚀剂层的基板。随后，蚀刻硬化的光致抗蚀剂层，以使光致抗蚀剂层变成预定的边缘轮廓。此后，在基板的一部分和光致抗蚀剂层的一部分上形成结构层。接下来，进行干蚀刻处理以去除光致抗蚀剂层，并将结构层转变成悬浮结构。

2. 发明授权

US07465601B2 Method of forming suspended structure 失效
标题翻译：形成悬浮结构的方法
公开(公告)号：US07465601B2
公开(公告)日：2008-12-16
申请号：US11736593
申请日：2007-04-18
申请人： Yu-Fu Kang , Chen-Hsiung Yang
发明人： Yu-Fu Kang , Chen-Hsiung Yang
IPC分类号： H01L21/62
CPC分类号： B81C1/0015
摘要： A method of forming a suspended structure is disclosed. Initially, a substrate is provided. A patterned first sacrificial layer and a patterned second sacrificial layer are formed on a front surface of the substrate. The second sacrificial layer has an opening exposing a part of the substrate and a part of the first sacrificial layer. A structural layer is formed covering the abovementioned sacrificial layers. Thereafter, a lift-off process is performed to remove the second sacrificial layer and define the pattern of the structural layer. A first etching process is performed on a back surface of the substrate utilizing the first sacrificial layer as an etching barrier and a through hole is formed under the first sacrificial layer. A second etching layer is performed to remove the first sacrificial layer and a suspended structure is thereby formed.
摘要翻译：公开了一种形成悬挂结构的方法。首先，提供基板。图案化的第一牺牲层和图案化的第二牺牲层形成在衬底的前表面上。第二牺牲层具有暴露基板的一部分和第一牺牲层的一部分的开口。形成覆盖上述牺牲层的结构层。此后，执行剥离处理以去除第二牺牲层并限定结构层的图案。利用第一牺牲层作为蚀刻阻挡层，在基板的背面上进行第一蚀刻工艺，并且在第一牺牲层下形成通孔。执行第二蚀刻层以去除第一牺牲层，由此形成悬挂结构。

3. 发明申请

US20070298582A1 METHOD OF PERFORMING A DOUBLE-SIDED PROCESS 失效
标题翻译：执行双面工艺的方法
公开(公告)号：US20070298582A1
公开(公告)日：2007-12-27
申请号：US11850678
申请日：2007-09-06
申请人： Chen-Hsiung Yang
发明人： Chen-Hsiung Yang
IPC分类号： H01L21/76
CPC分类号： H01L21/2007 , B81B2203/0127 , B81C1/00603 , B81C2201/019
摘要： A method of performing a double-sided process is provided. First, a wafer having a structural pattern disposed on the front surface is provided. Following that, a plurality of front scribe lines are defined on the structural pattern, and a filling layer is filled into the front scribe lines. Subsequently, the structural pattern is bonded to a carrier wafer with a bonding layer, and a plurality of back scribe lines are defined on the back surface of the wafer. Finally, the filling layer filled in the front scribe lines is removed.
摘要翻译：提供了一种执行双面处理的方法。首先，提供具有布置在前表面上的结构图案的晶片。接着，在结构图案上限定多个前划线，并将填充层填充到前划线中。接着，用结合层将结构图形结合到载体晶片上，并且在晶片的背面上形成多个后划痕线。最后，去除填充在前划痕线中的填充层。

4. 发明申请

US20070293023A1 METHOD OF FABRICATING SUSPENDED STRUCTURE 失效
标题翻译：制作悬挂结构的方法
公开(公告)号：US20070293023A1
公开(公告)日：2007-12-20
申请号：US11561902
申请日：2006-11-21
申请人： Yu-Fu Kang , Chen-Hsiung Yang
发明人： Yu-Fu Kang , Chen-Hsiung Yang
IPC分类号： H01L21/20
CPC分类号： B81C1/0015 , B81C2201/0108 , B81C2201/0132
摘要： A method of fabricating a suspended structure. First, a substrate including a photoresist layer hardened by heat is provided. Subsequently, the hardened photoresist layer is etched so as to turn the photoresist layer into a predetermined edge profile. Thereafter, a structure layer is formed on parts of the substrate and parts of the photoresist layer. Next, a dry etching process is performed so as to remove the photoresist layer, and to turn the structure layer into a suspended structure.
摘要翻译：一种制造悬挂结构的方法。首先，提供包含通过热硬化的光致抗蚀剂层的基板。随后，蚀刻硬化的光致抗蚀剂层，以使光致抗蚀剂层变成预定的边缘轮廓。此后，在基板的一部分和光致抗蚀剂层的一部分上形成结构层。接下来，进行干蚀刻处理以去除光致抗蚀剂层，并将结构层转变成悬浮结构。

5. 发明申请

US20070077676A1 METHOD OF FABRICATING PRESSURE SENSOR 审中-公开
标题翻译：压力传感器的制作方法
公开(公告)号：US20070077676A1
公开(公告)日：2007-04-05
申请号：US11308305
申请日：2006-03-15
申请人： Shih-Feng Shao , Chen-Hsiung Yang
发明人： Shih-Feng Shao , Chen-Hsiung Yang
IPC分类号： H01L21/46
CPC分类号： G01L9/0054
摘要： A method of fabricating a pressure sensor. An SOI wafer having a single crystalline silicon layer, an insulating layer and a silicon substrate is provided. The single crystalline silicon layer has a pressure sensing device. The silicon substrate and the insulating layer corresponding to the pressure sensing device are removed to form a cavity. A bonding substrate is adhered to the silicon substrate with a bonding layer.
摘要翻译：一种压力传感器的制造方法。提供了具有单晶硅层，绝缘层和硅衬底的SOI晶片。单晶硅层具有压力感测装置。对应于压力感测装置的硅衬底和绝缘层被去除以形成空腔。接合衬底用粘合层粘合到硅衬底上。

6. 发明申请

US20060276005A1 METHOD OF SEGMENTING A WAFER 失效
标题翻译：分隔波的方法
公开(公告)号：US20060276005A1
公开(公告)日：2006-12-07
申请号：US11160975
申请日：2005-07-18
申请人： Chen-Hsiung Yang
发明人： Chen-Hsiung Yang
IPC分类号： H01L21/78
CPC分类号： H01L21/78
摘要： First, a device wafer having a substrate layer and a device layer is provided. Then, a first mask pattern is utilized to remove the device layer uncovered by the first mask pattern. Subsequently, a medium layer is formed on the surface of the device wafer, and the medium layer is then bonded to a carrier wafer. Thereafter, a second mask pattern is utilized to remove the substrate layer uncovered by the second mask pattern. Finally, the medium layer is separated from the carrier wafer, the substrate layer is bonded to an extendable film, and the medium layer is then removed.
摘要翻译：首先，提供具有基板层和器件层的器件晶片。然后，使用第一掩模图案来去除由第一掩模图案未覆盖的器件层。随后，在器件晶片的表面上形成介质层，然后将介质层接合到载体晶片。此后，利用第二掩模图案来去除未被第二掩模图案覆盖的基底层。最后，将介质层与载体晶片分离，将基底层粘合到可延伸的膜上，然后除去介质层。

7. 发明申请

US20060017907A1 WAFER CARRIER 失效
标题翻译：散热器
公开(公告)号：US20060017907A1
公开(公告)日：2006-01-26
申请号：US10711882
申请日：2004-10-12
申请人： Chen-Hsiung Yang
发明人： Chen-Hsiung Yang
IPC分类号： G03B27/58
CPC分类号： G03F7/70691 , G03F7/70425 , G03F7/70708 , G03F9/7003
摘要： A wafer carrier for carrying a wafer includes a transparent base and a conducting layer. The transparent base has dimensions similar to that of the wafer, and bonds the wafer with a bonding layer. The conducting layer is transparent, and can be attracted by an electrostatic chuck so that the electrostatic chuck can deliver the wafer.
摘要翻译：用于承载晶片的晶片载体包括透明基底和导电层。透明基底具有与晶片相似的尺寸，并且用晶片结合层。导电层是透明的，并且可以被静电吸盘吸引，使得静电卡盘可以输送晶片。

8. 发明授权

US07410835B2 Method for fabricating semiconductor package with short-prevented lead frame 有权
标题翻译：制造具有防短路引线框架的半导体封装的方法
公开(公告)号：US07410835B2
公开(公告)日：2008-08-12
申请号：US11296592
申请日：2005-12-06
申请人： Jui-Hsiang Hung , Chin-Teng Hsu , Chen-Hsiung Yang , Chih-Jen Yang
发明人： Jui-Hsiang Hung , Chin-Teng Hsu , Chen-Hsiung Yang , Chih-Jen Yang
IPC分类号： H01L21/00
CPC分类号： H01L23/3107 , H01L23/49548 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/97 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/97 , H01L2924/00014 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/181 , H01L2224/85 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
摘要： A short-prevented lead frame and a method for fabricating a semiconductor package with the lead frame are proposed, wherein each lead of the lead frame is formed with a thickness-reduced portion at a peripheral position of the lead frame, allowing thickness-reduced portions of adjacent leads to be arranged in a stagger manner. This stagger arrangement significantly increases pitches between the neighboring thickness-reduced portions of leads. Therefore, during a singulation process as to cut through the leads, lead bridging and short-circuiting between adjacent leads caused by cut-side burrs can be prevented from occurrence, whereby singulation quality and product yield and reliability are effectively improved.
摘要翻译：提出一种防短引线框架和一种用于制造具有引线框架的半导体封装件的方法，其中引线框架的每个引线在引线框架的周边位置处形成有厚度减小部分，从而允许厚度减小的部分的相邻导线以错开的方式布置。这种交错布置显着增加了引线的相邻厚度减小部分之间的间距。因此，在切断引线的切割过程中，可以防止由切断毛刺引起的相邻导线之间的引线桥接和短路，从而有效地提高切割质量和产品成品率和可靠性。

9. 发明申请

US20080138923A1 METHOD OF FORMING SUSPENDED STRUCTURE 失效
标题翻译：形成悬挂结构的方法
公开(公告)号：US20080138923A1
公开(公告)日：2008-06-12
申请号：US11736593
申请日：2007-04-18
申请人： Yu-Fu Kang , Chen-Hsiung Yang
发明人： Yu-Fu Kang , Chen-Hsiung Yang
IPC分类号： H01L21/62
CPC分类号： B81C1/0015
摘要： A method of forming a suspended structure is disclosed. Initially, a substrate is provided. A patterned first sacrificial layer and a patterned second sacrificial layer are formed on a front surface of the substrate. The second sacrificial layer has an opening exposing a part of the substrate and a part of the first sacrificial layer. A structural layer is formed covering the abovementioned sacrificial layers. Thereafter, a lift-off process is performed to remove the second sacrificial layer and define the pattern of the structural layer. A first etching process is performed on a back surface of the substrate utilizing the first sacrificial layer as an etching barrier and a through hole is formed under the first sacrificial layer. A second etching layer is performed to remove the first sacrificial layer and a suspended structure is thereby formed.
摘要翻译：公开了一种形成悬挂结构的方法。首先，提供基板。图案化的第一牺牲层和图案化的第二牺牲层形成在衬底的前表面上。第二牺牲层具有暴露基板的一部分和第一牺牲层的一部分的开口。覆盖上述牺牲层的结构层被形成。此后，执行剥离处理以去除第二牺牲层并限定结构层的图案。利用第一牺牲层作为蚀刻阻挡层，在基板的背面上进行第一蚀刻工艺，并且在第一牺牲层下形成通孔。执行第二蚀刻层以去除第一牺牲层，由此形成悬挂结构。

10. 发明授权

US07192842B2 Method for bonding wafers 失效
标题翻译：接合晶片的方法
公开(公告)号：US07192842B2
公开(公告)日：2007-03-20
申请号：US10905794
申请日：2005-01-20
申请人： Shih-Feng Shao , Hsin-Ya Peng , Chen-Hsiung Yang
发明人： Shih-Feng Shao , Hsin-Ya Peng , Chen-Hsiung Yang
IPC分类号： H01L21/30
CPC分类号： B81C3/002
摘要： A first wafer is provided, and a photosensitive masking-and-bonding pattern is formed on the surface of the first wafer. Then, an etching process using the photosensitive masking-and-bonding pattern as a hard mask is performed to form a wafer pattern on the surface of the first wafer. Finally, the first wafer is bonded to a second wafer with the photosensitive masking-and-bonding pattern.
摘要翻译：提供第一晶片，并且在第一晶片的表面上形成感光掩模和键合图案。然后，执行使用光敏掩模 - 接合图案作为硬掩模的蚀刻工艺，以在第一晶片的表面上形成晶片图案。最后，利用感光掩模和键合图案将第一晶片结合到第二晶片。

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