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1. 发明专利

JP2005321133A Reactor 有权
标题翻译：反应堆
公开(公告)号：JP2005321133A
公开(公告)日：2005-11-17
申请号：JP2004138475
申请日：2004-05-07
申请人： Chiyoda Corp , Shigenao Maruyama , 千代田化工建設株式会社 , 重直圓山
发明人： MARUYAMA SHIGENAO , SHIOSAKI TORU , HOZUMI YOSHIKAZU , MORI TAKAAKI
IPC分类号： F23D14/66 , C10G9/20 , F23C3/00 , F23L15/02 , F27D99/00 , F27D23/00
CPC分类号： Y02E20/348
摘要： PROBLEM TO BE SOLVED: To provide a reactor having a reduced size without causing caulking. SOLUTION: A plurality of reaction pipes 12 are arranged to encircle flames 10 released from a high temperature air combustion type burner 9. The plurality of used reaction pipes each have a diameter D in a range of D≤0.3R, where R is a distance between a virtual center line PL and an inner peripheral wall face 3. The plurality of reaction pipes 12 are arranged to establish a relationship of 0.6R≤r≤0.7R, where r is a distance between the virtual center line PL and a virtual cylindrical face PS. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有减小的尺寸的反应器而不产生填缝。解决方案：多个反应管12被布置成环绕从高温空气燃烧式燃烧器9释放的火焰10.多个使用的反应管的直径D在D≤0.3R的范围内，其中R 是虚拟中心线PL和内周壁面3之间的距离。多个反应管12被布置成建立0.6R≤r≤0.7R的关系，其中r是虚拟中心线PL和虚拟圆柱面PS。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005321132A Reactor and its heat transfer promoting method 有权
标题翻译：反应器及其传热促进方法
公开(公告)号：JP2005321132A
公开(公告)日：2005-11-17
申请号：JP2004138474
申请日：2004-05-07
申请人： Chiyoda Corp , Shigenao Maruyama , 千代田化工建設株式会社 , 重直圓山
发明人： MARUYAMA SHIGENAO , SHIOSAKI TORU , HOZUMI YOSHIKAZU , MORI TAKAAKI
IPC分类号： F27D17/00 , F27B5/14
摘要： PROBLEM TO BE SOLVED: To provide a reactor for minimizing a temperature difference between the pipe walls of reaction pipes.
SOLUTION: Six reaction pipes 5b-5g are arranged to encircle one reaction pipe 5a. A radiation converter 6 is located between the reaction pipe 5a at the center and the other reaction pipes 5b-5g. The radiation converter 6 has a cylindrical shape encircling one reaction pipe 5a. The radiation converter 6 is formed of a metal net or a metal porous material.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于使反应管的管壁之间的温度差最小化的反应器。解决方案：六个反应管5b-5g布置成环绕一个反应管5a。辐射转换器6位于中心的反应管5a和其他反应管5b-5g之间。辐射转换器6具有围绕一个反应管5a的圆柱形状。辐射转换器6由金属网或金属多孔材料形成。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2004261210A Temperature control device and temperature control method using peltier element 有权
公开(公告)号：JP2004261210A
公开(公告)日：2004-09-24
申请号：JP2003021193
申请日：2003-01-29
申请人： Shigenao Maruyama , Mayekawa Mfg Co Ltd , 重直圓山 , 株式会社前川製作所
发明人： MARUYAMA SHIGENAO , FUJIMA KATSUMI , YOSHIKAWA TOMOIKU , FUKANO SHUJI
IPC分类号： F25B21/02 , A61B18/02 , A61F7/00
CPC分类号： A61B18/02 , A61B2018/0237
摘要： PROBLEM TO BE SOLVED: To provide a temperature control device using a Peltier element which is simplified in structure to be reduced in cost and enhanced in the temperature control precision of a contact surface based on a temperature detection value of a temperature sensor by making it possible to thermally insulate the Peltier element and the connection element thereof without installing a vacuum container for sealing the Peltier element and a connection element thereof and a device related thereto, and a temperature control method thereof. SOLUTION: In the temperature control device using the Peltier element for rapidly cooling or heating an object of which the temperature must be controlled by the Peltier effect brought about by applying DC voltage across the Peltier element and an electrode also used as a heat sink through the contact surface of the conductor capable of making contact with an object of which the temperature is controlled, a leading end cover for covering the whole of the conductor, the Peltier element and the electrode also used as the heat sink or a part thereof on the side of the contact surface is provided and a gas layer wherein gas is sealed in the internally sealed space formed inside the leading end cover is provided while a heat insulating layer including a heat insulating material is provided between the conductor and the gas layer of the internally sealed space. COPYRIGHT: (C)2004,JPO&NCIPI

4. 发明授权

US08600543B2 Apparatus and method for controlling temperature of semiconductor wafers 有权
标题翻译：用于控制半导体晶片温度的装置和方法
公开(公告)号：US08600543B2
公开(公告)日：2013-12-03
申请号：US12992971
申请日：2009-11-09
申请人： Hiroaki Takechi , Norio Takahashi , Wataru Kiyosawa , Shigenao Maruyama , Atsuki Komiya
发明人： Hiroaki Takechi , Norio Takahashi , Wataru Kiyosawa , Shigenao Maruyama , Atsuki Komiya
IPC分类号： G06F19/00
CPC分类号： H01L21/67248 , H01L21/67005 , H01L21/67109
摘要： When a temperature of a semiconductor wafer is controlled to be a target temperature by raising the temperature of the semiconductor wafer, switching is performed so that a high-temperature circulating liquid at a temperature higher than the target temperature in a high-temperature tank is supplied into an inside-stage flow channel, and respective thermoelectric elements in a plurality of zones in a stage are controlled; and then, the temperature of the semiconductor wafer matches the target temperature and a desired in-plane temperature distribution of the semiconductor wafer is provided.
摘要翻译：当通过提高半导体晶片的温度将半导体晶片的温度控制为目标温度时，进行切换，使得在高温罐中的高于目标温度的温度下供给高温循环液体进入内侧流路，控制台阶多个区域的各热电元件; 然后，提供半导体晶片的温度与目标温度匹配并且提供半导体晶片的期望的面内温度分布。

5. 发明授权

US08511261B2 Piston cooling device 有权
标题翻译：活塞冷却装置
公开(公告)号：US08511261B2
公开(公告)日：2013-08-20
申请号：US13580905
申请日：2011-02-22
申请人： Shigenao Maruyama , Atsuki Komiya , Shuichi Moriya , Morimasa Nagata , Seiji Kosaka , Yasuhiro Kawamura , Junya Negishi , Yoshita Tsukamoto
发明人： Shigenao Maruyama , Atsuki Komiya , Shuichi Moriya , Morimasa Nagata , Seiji Kosaka , Yasuhiro Kawamura , Junya Negishi , Yoshita Tsukamoto
IPC分类号： F01P1/04
CPC分类号： F02F3/22 , F01M1/08 , F01P3/10
摘要： Disclosed is a piston cooling device wherein the cooling efficiency of a piston is improved by oil injected from an oil jet and supplied to a cooling passage provided in the piston, and the amount of cooling oil is reduced when an internal combustion engine is operated at maximum output. The piston cooling device is provided with a piston for an internal combustion engine, in which a circumferential passage and a cooling passage having an inlet passage and an outlet passage are provided, and an oil jet for injecting oil from an injection port to the inlet passage. The oil jet injects oil at every stroke of the piston so that a two-phase plug flow composed of gas and oil is formed in the cooling passage at least when an internal combustion engine is operated at maximum output.
摘要翻译：公开了一种活塞冷却装置，其中通过从喷油口喷射的油被提供给设置在活塞中的冷却通道的活塞的冷却效率提高，并且当内燃机运行最大时冷却油的量减少输出。活塞冷却装置设置有用于内燃机的活塞，其中设有具有入口通道和出口通道的周向通道和冷却通道，以及用于将油从注射口喷射到入口通道的喷油嘴。油喷射器在活塞的每个行程处喷射油，使得至少在内燃机以最大输出运转时，在冷却通道中形成由气体和油组成的两相塞流。

6. 发明申请

US20060005550A1 Temperature control device and method using peltier element 审中-公开
标题翻译：温度控制装置及方法采用珀耳帖元件
公开(公告)号：US20060005550A1
公开(公告)日：2006-01-12
申请号：US11179023
申请日：2005-07-11
申请人： Shigenao Maruyama , Katsumi Fujima , Choiku Yoshikawa , Shuji Fukano
发明人： Shigenao Maruyama , Katsumi Fujima , Choiku Yoshikawa , Shuji Fukano
IPC分类号： F25B21/02
CPC分类号： A61B18/02 , A61B2018/0237
摘要： There are provided an device for controlling temperature by Peltier element and a method for controlling temperature by the same, wherein the structure of the device can be simplified, the cost making the device can be reduced and an accuracy of the temperature control of a contact plane based on the detected temperature value with a temperature sensor can be improved by capacitating insulation for a Peltier element and related elements without providing a vacuum case and related elements for encapsulating a Peltier element and related elements. In an device for controlling temperature by Peltier element, wherein a temperature-controlled body is rapidly cooled or heated by Peltier effect generated by contacting the temperature-controlled body with the contact plane connected to a conductive body and by applying a direct current voltage between the Peltier element and the electrode-cum-heat-sink, an device for controlling temperature by Peltier element is characterized in that there are provided an end cover which covers the conductive body, the Peltier element and a whole of the electrode-cum-heat-sink or a part of the conductive body side and which forms a contact plane; a gas layer sealed in a space formed inside the cover; and an insulating layer comprising insulating material in the space formed inside the cover between the conductive body and the gas layer.
摘要翻译：提供了一种用于通过珀耳帖元件控制温度的装置和用于控制温度的方法，其中可以简化装置的结构，可以降低装置的成本和接触平面的温度控制的精度基于用温度传感器检测到的温度值可以通过对珀尔帖元件和相关元件的电容绝缘而提供，而不需要提供真空壳体和用于封装珀耳帖元件和相关元件的相关元件。在用于通过珀尔帖元件控制温度的装置中，其中温度受控体被珀尔帖效应快速冷却或加热，所述效应是通过使温度受控体与连接到导电体的接触平面接触而产生的，并且通过在珀耳帖元件和电极暨散热器，用于通过珀耳帖元件控制温度的装置的特征在于，提供一种端盖，其覆盖导电体，珀耳帖元件和整个电极 - 热 - 沉没或导电体侧的一部分，并形成接触面; 密封在形成在所述盖内的空间中的气体层; 以及在导电体和气体层之间的盖内形成的空间中包含绝缘材料的绝缘层。

7. 发明授权

US4971141A Jet stream injection system 失效
标题翻译：射流喷射系统
公开(公告)号：US4971141A
公开(公告)日：1990-11-20
申请号：US212065
申请日：1988-06-28
申请人： Keisuke Kasahara , Toshio Aihara , Shigenao Maruyama
发明人： Keisuke Kasahara , Toshio Aihara , Shigenao Maruyama
IPC分类号： F27B15/02 , B01J8/44 , F28D13/00 , F28F19/00
CPC分类号： F28D13/00 , B01J8/44 , F28F19/006
摘要： A jet stream injection device for use in a heat exchanger of a fluidized-bed type in which a flat jet stream is injected toward a heat transmission coil of the heat exchanger from below this coil so that is runs along said cell so as to form a mixed-phase flow of a gas and solid particles around the heat transmission coil. The jet stream injection device has a net with meshes smaller than the size of the particles of a fluidized bed provided over an opening provided on the upstream side of a jet stream generating slit-shaped injection port element. The opening has a larger passage sectional area than the injection port element.
摘要翻译：一种用于流化床型热交换器的喷射流注入装置，其中平面喷射流从该线圈下方朝向热交换器的传热线圈注入，从而沿着该细胞运行，以形成气体和固体颗粒在传热线圈周围的混合相流。射流注入装置具有网，其网格小于设置在产生狭缝形喷射口元件的射流的上游侧上的开口上的流化床颗粒的尺寸。开口具有比注入口元件更大的通道截面面积。

8. 发明申请

US20130000572A1 PISTON COOLING DEVICE 有权
标题翻译：活塞式冷却装置
公开(公告)号：US20130000572A1
公开(公告)日：2013-01-03
申请号：US13580905
申请日：2011-02-22
申请人： Shigenao Maruyama , Atsuki Komiya , Shuichi Moriya , Morimasa Nagata , Seiji Kosaka , Yasuhiro Kawamura , Junya Negishi , Yoshita Tsukamoto
发明人： Shigenao Maruyama , Atsuki Komiya , Shuichi Moriya , Morimasa Nagata , Seiji Kosaka , Yasuhiro Kawamura , Junya Negishi , Yoshita Tsukamoto
IPC分类号： F01P1/04
CPC分类号： F02F3/22 , F01M1/08 , F01P3/10
摘要： Disclosed is a piston cooling device wherein the cooling efficiency of a piston is improved by oil injected from an oil jet and supplied to a cooling passage provided in the piston, and the amount of cooling oil is reduced when an internal combustion engine is operated at maximum output. The piston cooling device is provided with a piston for an internal combustion engine, in which a circumferential passage and a cooling passage having an inlet passage and an outlet passage are provided, and an oil jet for injecting oil from an injection port to the inlet passage. The oil jet injects oil at every stroke of the piston so that a two-phase plug flow composed of gas and oil is formed in the cooling passage at least when an internal combustion engine is operated at maximum output.
摘要翻译：公开了一种活塞冷却装置，其中通过从喷油口喷射的油被提供给设置在活塞中的冷却通道的活塞的冷却效率提高，并且当内燃机运行最大时冷却油的量减少输出。活塞冷却装置设置有用于内燃机的活塞，其中设有具有入口通道和出口通道的周向通道和冷却通道，以及用于将油从注射口喷射到入口通道的喷油嘴。油喷射器在活塞的每个行程处喷射油，使得至少在内燃机以最大输出运转时，在冷却通道中形成由气体和油组成的两相塞流。

9. 发明申请

US20110066294A1 APPARATUS AND METHOD FOR CONTROLLING TEMPERATURE OF SEMICONDUCTOR WAFERS 有权
标题翻译：用于控制半导体波导温度的装置和方法
公开(公告)号：US20110066294A1
公开(公告)日：2011-03-17
申请号：US12992971
申请日：2009-11-09
申请人： Hiroaki Takechi , Norio Takahashi , Wataru Kiyosawa , Shigenao Maruyama , Atsuki Komiya
发明人： Hiroaki Takechi , Norio Takahashi , Wataru Kiyosawa , Shigenao Maruyama , Atsuki Komiya
IPC分类号： G05D23/00 , G05D7/00
CPC分类号： H01L21/67248 , H01L21/67005 , H01L21/67109
摘要： A manufacturing time of a semiconductor device is shortened by raising and dropping a base temperature of a semiconductor wafer such as silicon wafer to a target temperature at a high speed, a semiconductor device is manufactured with high qualities by making an in-plane temperature distribution of the semiconductor wafer a desired temperature distribution with high accuracy (by uniformizing an in-plane temperature and varying the in-plane temperature distribution for each region), and furthermore, an apparatus with excellent energy efficiency can be simply configured. When the temperature of the semiconductor wafer is controlled to be the target temperature by raising the temperature of the semiconductor wafer, control means performs switching so as to supply a high-temperature circulating liquid at a temperature higher than the target temperature in a high-temperature tank to a channel in a stage, and controls the thermoelectric element in plural zones so that the temperature of the semiconductor wafer coincides with the target temperature and the in-plane temperature distribution of the semiconductor wafer becomes the desired temperature distribution.
摘要翻译：半导体器件的制造时间通过将诸如硅晶片的半导体晶片的基底温度高速地提高到目标温度而缩短，通过使半导体器件的面内温度分布半导体晶片具有高精度的期望的温度分布（通过均匀化面内温度并改变各区域的面内温度分布），此外，可以简单地构造具有优异的能量效率的装置。当通过提高半导体晶片的温度将半导体晶片的温度控制为目标温度时，控制装置执行切换，以便在高温下提供高于目标温度的高温循环液体并且控制多个区域中的热电元件，使得半导体晶片的温度与目标温度一致，并且半导体晶片的面内温度分布变为期望的温度分布。

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