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1. 发明申请

US20060079058A1 Method for inspecting semiconductor device 失效
公开(公告)号：US20060079058A1
公开(公告)日：2006-04-13
申请号：US11287458
申请日：2005-11-28
申请人： Shigemitsu Shiba
发明人： Shigemitsu Shiba
IPC分类号： H01L21/336
CPC分类号： G01R31/311
摘要： A wafer is irradiated with laser light having a wavelength which is transmitted through an inside of a crystal of the wafer and does not generate an electromotive force due to photo-excitation while the laser light is scanned. When a temperature of the wafer is increased by the irradiation, a thermo-electromotive force is generated in a crystalline abnormal part of the wafer by a Seebeck effect. A defect inside the crystal is detected such that the thermo-electromotive force is detected by a change in voltage or current which appears between an anode and a cathode of the wafer and the thermo-electromotive force is displayed on a CRT.

2. 发明授权

US07015051B2 Method for inspecting semiconductor device 失效
标题翻译：半导体器件检查方法
公开(公告)号：US07015051B2
公开(公告)日：2006-03-21
申请号：US10879060
申请日：2004-06-30
申请人： Shigemitsu Shiba
发明人： Shigemitsu Shiba
IPC分类号： H01L31/26 , H01L21/66
CPC分类号： G01R31/311
摘要： A wafer is irradiated with laser light having a wavelength which is transmitted through an inside of a crystal of the wafer and does not generate an electromotive force due to photo-excitation while the laser light is scanned. When a temperature of the wafer is increased by the irradiation, a thermo-electromotive force is generated in a crystalline abnormal part of the wafer by a Seebeck effect. A defect inside the crystal is detected such that the thermo-electromotive force is detected by a change in voltage or current which appears between an anode and a cathode of the wafer and the thermo-electromotive force is displayed on a CRT.
摘要翻译：用透射通过晶片内部的波长的激光照射晶片，并且在扫描激光时不产生由于光激发产生的电动势。当通过照射增加晶片的温度时，通过塞贝克效应在晶片的晶体异常部分中产生热电动势。检测晶体内部的缺陷，使得通过出现在晶片的阳极和阴极之间的电压或电流的变化来检测热电动势，并且热电动势显示在CRT上。

3. 发明授权

US06553047B1 Semiconductor laser device with an inspection window, and an inspection method therefor 失效
标题翻译：具有检查窗的半导体激光装置及其检查方法
公开(公告)号：US06553047B1
公开(公告)日：2003-04-22
申请号：US09536644
申请日：2000-03-28
申请人： Shigemitsu Shiba
发明人： Shigemitsu Shiba
IPC分类号： H01S500
CPC分类号： H01S5/0425 , H01S5/0014
摘要： A semiconductor laser device having a chip electrode of a semiconductor laser is provided. The laser device includes a first electrode layer of a first material, and a second electrode layer of a second material. The second electrode layer has an opening corresponding to a light-emitting section of the laser, and is formed on a face of the first electrode layer. The first material of the first electrode layer is different than the second material of the second electrode layer.
摘要翻译：提供了具有半导体激光器的芯片电极的半导体激光器件。激光装置包括第一材料的第一电极层和第二材料的第二电极层。第二电极层具有与激光的发光部对应的开口，并且形成在第一电极层的表面上。第一电极层的第一材料与第二电极层的第二材料不同。

4. 发明授权

US06662142B2 System for providing information on quality and reliability of optical semiconductor device by using communication network 失效
标题翻译：通过使用通信网络提供光半导体器件的质量和可靠性信息的系统
公开(公告)号：US06662142B2
公开(公告)日：2003-12-09
申请号：US09994734
申请日：2001-11-28
申请人： Shigemitsu Shiba
发明人： Shigemitsu Shiba
IPC分类号： G01R3126
CPC分类号： H01L22/20 , G01R31/01 , Y02P90/04 , Y02P90/22
摘要： The system for providing information on quality and reliability according to the present invention includes: a first information communication terminal for outputting, as information on a side of a maker producing an optical semiconductor device, information gathered at a first time regarding a characteristic of the device; a second information communication terminal for outputting, as information on a side of a user using the device, information gathered at a second time regarding the characteristic of the device; and an information processing apparatus that (1) computes a rate of change in the characteristic of the device from the first time to the second time on the basis of the information outputted from the first and second information terminals, and (2) outputs a signal representing an abnormality to at least one of the first and second information terminals when the computed rate of change is out of a predetermined numerical range.
摘要翻译：根据本发明的用于提供关于质量和可靠性的信息的系统包括：第一信息通信终端，用于输出作为制造光学半导体装置的制造商的一方的信息，第一时间收集关于装置的特性的信息 ; 第二信息通信终端，用于作为关于使用所述设备的用户侧的信息输出关于所述设备的特性的第二时间收集的信息; 以及信息处理装置，其（1）根据从第一和第二信息终端输出的信息，计算从第一时间到第二时间的设备特性的变化率，以及（2）输出信号当所计算的变化率在预定的数值范围之外时，对第一和第二信息终端中的至少一个信号表示异常。

5. 发明申请

US20110203618A1 PRODUCTION LINE SYSTEM 有权
标题翻译：生产线系统
公开(公告)号：US20110203618A1
公开(公告)日：2011-08-25
申请号：US13032004
申请日：2011-02-22
申请人： Shigemitsu Shiba , Yoshiro Shiba , Takayuki Miura , Manabu Kayamoto , Ichirou Sakuraba , Hiroshi Nakayama
发明人： Shigemitsu Shiba , Yoshiro Shiba , Takayuki Miura , Manabu Kayamoto , Ichirou Sakuraba , Hiroshi Nakayama
IPC分类号： B08B3/00
CPC分类号： B23Q11/12 , Y02P80/156
摘要： A production line system includes a cooling processing step of cooling a coolant for processing machines (lathes) of work, and a heating processing step of heating washing fluid for a washing machine which washes the work after processing by the lathes. The heating processing step and the cooling processing step are performed by a heat pump in one heat pump cycle. Further, a heat balance between heating in the heating processing step and cooling in the cooling processing step is adjusted with the setting temperature of the washing fluid and the setting temperature of the coolant.
摘要翻译：一种生产线系统包括冷却工作的冷却处理步骤，用于加工机床（车床）;以及加热处理步骤，用于加热洗涤机的洗涤液，该洗衣机在车床加工后进行清洗。加热处理步骤和冷却处理步骤通过一个热泵循环中的热泵进行。此外，加热处理步骤中的加热和冷却处理步骤中的冷却之间的热平衡随着洗涤液的设定温度和冷却剂的设定温度而被调节。

6. 发明授权

US07385686B2 Method and apparatus for inspecting semiconductor device 失效
标题翻译：用于检查半导体器件的方法和装置
公开(公告)号：US07385686B2
公开(公告)日：2008-06-10
申请号：US10873294
申请日：2004-06-23
申请人： Shigemitsu Shiba , Keitaro Takagi
发明人： Shigemitsu Shiba , Keitaro Takagi
IPC分类号： G01N21/00 , H01L21/66
CPC分类号： G01R31/308
摘要： A laser diode chip is scanned and irradiated with laser light penetrating the interior of crystal of a chip and having a wavelength which produces no electromotive force by optical excitation. When the temperature of a chip 1 increases through irradiation, a thermoelectromotive force is generated in a crystal abnormal part of the chip 1 by a Seebeck effect. This thermoelectromotive force is detected from a change of a voltage or current appearing between the anode and cathode of the chip 1 and displayed at a CRT to thereby detect defects inside the crystal.
摘要翻译：扫描激光二极管芯片并照射穿过芯片晶体内部的激光，并且具有通过光学激发而不产生电动势的波长。当芯片1的温度通过照射增加时，通过塞贝克效应在芯片1的晶体异常部分中产生热电动势。这种热电动势是从芯片1的阳极和阴极之间出现的电压或电流的变化来检测的，并显示在CRT上，从而检测晶体内部的缺陷。

7. 发明授权

US07332362B2 Method for inspecting semiconductor device 失效
标题翻译：半导体器件检查方法
公开(公告)号：US07332362B2
公开(公告)日：2008-02-19
申请号：US11287458
申请日：2005-11-28
申请人： Shigemitsu Shiba
发明人： Shigemitsu Shiba
IPC分类号： H01L21/66 , H01L35/24
CPC分类号： G01R31/311
摘要： A wafer is irradiated with laser light having a wavelength which is transmitted through an inside of a crystal of the wafer and does not generate an electromotive force due to photo-excitation while the laser light is scanned. When a temperature of the wafer is increased by the irradiation, a thermo-electromotive force is generated in a crystalline abnormal part of the wafer by a Seebeck effect. A defect inside the crystal is detected such that the thermo-electromotive force is detected by a change in voltage or current which appears between an anode and a cathode of the wafer and the thermo-electromotive force is displayed on a CRT.
摘要翻译：用透射通过晶片内部的波长的激光照射晶片，并且在扫描激光时不产生由于光激发产生的电动势。当通过照射增加晶片的温度时，通过塞贝克效应在晶片的晶体异常部分中产生热电动势。检测晶体内部的缺陷，使得通过出现在晶片的阳极和阴极之间的电压或电流的变化来检测热电动势，并且热电动势显示在CRT上。

8. 发明授权

US06870869B2 Semiconductor laser apparatus and method of observing semiconductor laser apparatus 失效
标题翻译：半导体激光装置及观察半导体激光装置的方法
公开(公告)号：US06870869B2
公开(公告)日：2005-03-22
申请号：US09794355
申请日：2001-02-28
申请人： Shigemitsu Shiba
发明人： Shigemitsu Shiba
IPC分类号： H01S5/00 , H01S5/02 , H01S5/042
CPC分类号： H01S5/0425 , H01S5/0014 , H01S5/02
摘要： A semiconductor laser apparatus comprises a semiconductor laser chip disposed on a base through an electrode area, wherein the electrode area comprises at least a first electrode layer having no opening and a second electrode layer having an opening from the semiconductor laser chip side, the second electrode layer is formed of materials different from those of the first electrode layer and the opening of the second electrode layer is shaped in such a manner as to allow observation of a light emitting portion of the semiconductor laser chip by etching the first electrode layer using the second electrode layer as a mask. Another semiconductor laser apparatus comprises first and second electrode areas on the upper surface and the lower surface of the semiconductor laser chip, wherein both the first and the second electrode areas comprise at least the first electrode layer having no opening and the second electrode layer having the opening from the semiconductor laser chip side.
摘要翻译：半导体激光装置包括通过电极区域设置在基底上的半导体激光器芯片，其中电极区域至少包括不具有开口的第一电极层和具有来自半导体激光器芯片侧的开口的第二电极层，第二电极层由与第一电极层不同的材料形成，并且第二电极层的开口被成形为允许通过使用第二电极层蚀刻第一电极层来观察半导体激光器芯片的发光部分电极层作为掩模。另一半导体激光装置包括在半导体激光芯片的上表面和下表面上的第一和第二电极区域，其中第一和第二电极区域至少包括没有开口的第一电极层，而第二电极层具有从半导体激光芯片侧开口。

9. 发明申请

US20050012923A1 Method for inspecting semiconductor device 失效
标题翻译：半导体器件检查方法
公开(公告)号：US20050012923A1
公开(公告)日：2005-01-20
申请号：US10879060
申请日：2004-06-30
申请人： Shigemitsu Shiba
发明人： Shigemitsu Shiba
IPC分类号： H01L21/66 , G01R31/311 , G01N21/00
CPC分类号： G01R31/311
摘要： A wafer is irradiated with laser light having a wavelength which is transmitted through an inside of a crystal of the wafer and does not generate electromotive force due to photo-excitation while the laser light is scanned. When a temperature of the wafer is increased by the irradiation, thermo-electromotive force is generated in a crystalline abnormal part of the wafer by Seebeck effect. A defect inside the crystal is detected such that the thermo-electromotive force is detected by a change in voltage or current which appears between an anode and a cathode of the wafer and the thermo-electromotive force is displayed on CRT.
摘要翻译：用透射通过晶片内部的波长的激光照射晶片，并且在扫描激光时不产生由于光激发产生的电动势。当通过照射增加晶片的温度时，通过塞贝克效应在晶片的晶体异常部分中产生热电动势。检测晶体内部的缺陷，使得通过出现在晶片的阳极和阴极之间的电压或电流的变化来检测热电动势，并且将热电动势显示在CRT上。

10. 发明授权

US09061390B2 Production line system 有权
标题翻译：生产线系统
公开(公告)号：US09061390B2
公开(公告)日：2015-06-23
申请号：US13032004
申请日：2011-02-22
申请人： Shigemitsu Shiba , Yoshiro Shiba , Takayuki Miura , Manabu Kayamoto , Ichirou Sakuraba , Hiroshi Nakayama
发明人： Shigemitsu Shiba , Yoshiro Shiba , Takayuki Miura , Manabu Kayamoto , Ichirou Sakuraba , Hiroshi Nakayama
IPC分类号： B23Q11/12
CPC分类号： B23Q11/12 , Y02P80/156
摘要： A production line system includes a cooling processing step of cooling a coolant for processing machines (lathes) of work, and a heating processing step of heating washing fluid for a washing machine which washes the work after processing by the lathes. The heating processing step and the cooling processing step are performed by a heat pump in one heat pump cycle. Further, a heat balance between heating in the heating processing step and cooling in the cooling processing step is adjusted with the setting temperature of the washing fluid and the setting temperature of the coolant.
摘要翻译：一种生产线系统包括冷却工作的冷却处理步骤，用于加工机床（车床）;以及加热处理步骤，用于加热洗涤机的洗涤液，该洗衣机在车床加工后进行清洗。加热处理步骤和冷却处理步骤通过一个热泵循环中的热泵进行。此外，加热处理步骤中的加热和冷却处理步骤中的冷却之间的热平衡随着洗涤液的设定温度和冷却剂的设定温度而被调节。

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