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1. 发明授权

US08640543B2 Micro-electro-mechanical system device, out-of-plane sensor and method for making micro-electro-mechanical system device 有权
标题翻译：微机电系统装置，平面外传感器及制造微机电系统装置的方法
公开(公告)号：US08640543B2
公开(公告)日：2014-02-04
申请号：US13451154
申请日：2012-04-19
申请人： Sheng Ta Lee , Chuan Wei Wang
发明人： Sheng Ta Lee , Chuan Wei Wang
IPC分类号： G01P15/125
CPC分类号： G01P15/125 , B81B2201/025 , B81C1/00246 , B81C2203/0714 , G01P15/08 , G01P15/0802
摘要： The present invention discloses a micro-electro-mechanical system (MEMS) device, comprising: a mass including a main body and two capacitor plates located at the two sides of the main body and connected with the main body, the two capacitor plates being at different elevation levels; an upper electrode located above one of the two capacitor plates, forming one capacitor therewith; and a lower electrode located below the other of the two capacitor plates, forming another capacitor therewith, wherein the upper and lower electrodes are misaligned with each other in a horizontal direction.
摘要翻译：本发明公开了一种微电子机械系统（MEMS）装置，其特征在于，包括：主体和两个位于主体两侧并与主体连接的电容器板的质量体，两个电容器板位于不同高程水平; 位于两个电容器板之一上方的上电极，与其形成一个电容器; 以及位于两个电容器板的另一个下方的下电极，与其形成另一个电容器，其中上电极和下电极在水平方向上彼此不对准。

2. 发明授权

US08372675B2 Microelectronic device and fabricating method thereof and MEMS package structure and fabricating method thereof 有权
标题翻译：微电子器件及其制造方法和MEMS封装结构及其制造方法
公开(公告)号：US08372675B2
公开(公告)日：2013-02-12
申请号：US12756558
申请日：2010-04-08
申请人： Hsin-Hui Hsu , Sheng-Ta Lee , Chuan-Wei Wang
发明人： Hsin-Hui Hsu , Sheng-Ta Lee , Chuan-Wei Wang
IPC分类号： H01L21/00
CPC分类号： B81B3/0018 , B81C1/00015 , B81C1/00246 , B81C1/00333 , B81C2203/0145 , B81C2203/0714 , H01L21/768 , H01L27/1443 , H01L27/14632
摘要： A fabricating method of a microelectronic device including the following steps is provided. First, a substrate is provided. Second, a semi-conductor element is formed in a CMOS circuit region of the substrate. Next, a plurality of metallic layer, a plurality of contact plugs and a plurality of oxide layer are formed on the substrate. The metallic layers and the oxide layers are interlaced with each other and the contact plugs are formed in the oxide layers and connected with the metallic layers correspondingly so as to form a micro electromechanical system (MEMS) structure within a MEMS region and an interconnecting structure within the CMOS circuit region. Then, a first protective layer is formed on at least one of the oxide layers and a second protective layer is formed on the interconnecting structure. Predetermined portions of the oxide layers located within the MEMS region are removed and thereby the MEMS structure is partially suspended above the substrate. The present invention also provides a microelectronic device, a MEMS package structure and a fabricating method thereof.
摘要翻译：提供了一种包括以下步骤的微电子器件的制造方法。首先，提供基板。第二，半导体元件形成在衬底的CMOS电路区域中。接下来，在基板上形成多个金属层，多个接触插塞和多个氧化物层。金属层和氧化物层彼此交织并且接触塞形成在氧化物层中并且相应地与金属层连接，以便在MEMS区域内形成微机电系统（MEMS）结构，并且在MEMS区域内形成互连结构 CMOS电路区域。然后，在至少一个氧化物层上形成第一保护层，在互连结构上形成第二保护层。位于MEMS区域内的氧化物层的预定部分被去除，从而将MEMS结构部分地悬置在衬底上。本发明还提供一种微电子器件，一种MEMS封装结构及其制造方法。

3. 发明授权

US08372563B2 MEMS lithography mask with improved tungsten deposition topography and method for the same 有权
标题翻译：具有改进的钨沉积形貌的MEMS光刻掩模及其方法
公开(公告)号：US08372563B2
公开(公告)日：2013-02-12
申请号：US12802209
申请日：2010-06-02
申请人： Hsin-Hui Hsu , Chuan-Wei Wang , Sheng-Ta Lee , Chih-Hung Lu
发明人： Hsin-Hui Hsu , Chuan-Wei Wang , Sheng-Ta Lee , Chih-Hung Lu
IPC分类号： G03F1/70 , G03F7/00
CPC分类号： G03F1/36 , B81B2207/07 , B81C1/00404 , G02B26/0833
摘要： The present invention discloses a MEMS lithography mask with improved tungsten deposition topography and a method for making the same. The MEMS lithography mask includes: a pattern including at least two sections forming a conjunction with each other, each of the at least two sections having a width not less than a minimum width, the conjunction having a center and a plurality of corners, wherein at least one of the corners is inwardly recessed to reduce a width of the conjunction, the sections being for defining trenches on a substrate to be filled with tungsten as apart of a MEMS device, whereby the lowest height of the tungsten surface is not lower than 80% of the trench height.
摘要翻译：本发明公开了一种具有改善的钨沉积形貌的MEMS光刻掩模及其制造方法。 MEMS光刻掩模包括：包括形成彼此连接的至少两个部分的图案，所述至少两个部分中的每一个具有不小于最小宽度的宽度，所述连接具有中心和多个拐角，其中在至少一个拐角向内凹进以减小连接的宽度，这些部分用于限定衬底上的沟槽，以将钨填充为MEMS器件的分开，由此钨表面的最低高度不低于80 沟槽高度的百分比。

4. 发明授权

US08183650B2 MEMS device and MEMS spring element 有权
标题翻译： MEMS器件和MEMS弹簧元件
公开(公告)号：US08183650B2
公开(公告)日：2012-05-22
申请号：US12756305
申请日：2010-04-08
申请人： Chuan-Wei Wang , Sheng-Ta Lee , Hsin-Hui Hsu
发明人： Chuan-Wei Wang , Sheng-Ta Lee , Hsin-Hui Hsu
IPC分类号： H01L21/02
CPC分类号： B81B3/0072 , B81B2201/025 , B81B2203/0118
摘要： A micro electromechanical system (MEMS) spring element is disposed on a substrate, and includes a fixing portion and a moveable portion. The fixing portion is fixed on the substrate, and includes an insulating layer, a plurality of metal-fixing layers and a plurality of supporting-fixing layers. The insulating layer is disposed on the substrate. The metal-fixing layers are disposed above the insulating layer. The supporting-fixing layers are connected between the metal-fixing layers. The moveable portion has a first end and a second end. The first end is connected with the fixing portion, and the second end is suspended above the substrate. The moveable portion includes a plurality of metal layers and at least a supporting layer. The supporting layer is connected between the adjacent metal layers, and a hollow region is formed between the supporting layer and the adjacent metal layers. The deformation of the MEMS spring element generated because of the different thermal expansion may be avoided and the working performance of the MEMS spring element can be improved.
摘要翻译：微机电系统（MEMS）弹簧元件设置在基板上，并且包括固定部分和可移动部分。固定部固定在基板上，具有绝缘层，多个金属固定层和多个支撑固定层。绝缘层设置在基板上。金属固定层设置在绝缘层的上方。支撑固定层连接在金属固定层之间。可移动部分具有第一端和第二端。第一端与固定部分连接，第二端悬挂在基板上。可移动部分包括多个金属层和至少一个支撑层。支撑层连接在相邻的金属层之间，并且在支撑层和相邻金属层之间形成中空区域。可以避免由于不同的热膨胀而产生的MEMS弹簧元件的变形，并且可以提高MEMS弹簧元件的工作性能。

5. 发明申请

US20110304009A1 MEMS INTEGRATED CHIP WITH CROSS-AREA INTERCONNECTION 有权
标题翻译： MEMS集成芯片与交叉区域互连
公开(公告)号：US20110304009A1
公开(公告)日：2011-12-15
申请号：US13214785
申请日：2011-08-22
申请人： Hsin-Hui Hsu , Chuan-Wei Wang , Sheng-Ta Lee
发明人： Hsin-Hui Hsu , Chuan-Wei Wang , Sheng-Ta Lee
IPC分类号： H01L29/06
CPC分类号： B81C1/00238
摘要： The present invention discloses a MEMS (Micro-Electro-Mechanical System) integrated chip with cross-area interconnection, comprising: a substrate; a MEMS device area on the substrate; a microelectronic device area on the substrate; a guard ring separating the MEMS device area and the microelectronic device area; and a conductive layer on the surface of the substrate below the guard ring, or a well in the substrate below the guard ring, as a cross-area interconnection electrically connecting the MEMS device area and the microelectronic device area.
摘要翻译：本发明公开了一种具有跨区域互连的MEMS（微电子机械系统）集成芯片，包括：基板; 衬底上的MEMS器件区域; 衬底上的微电子器件区域; 分离MEMS器件区域和微电子器件区域的保护环; 以及位于保护环下方的衬底的表面上的导电层，或保护环下方的衬底中的阱，作为将MEMS器件区域和微电子器件区域电连接的跨区域互连。

6. 发明授权

US07989247B2 In-plane sensor and method for making same 有权
标题翻译：平面内传感器及其制作方法
公开(公告)号：US07989247B2
公开(公告)日：2011-08-02
申请号：US12220847
申请日：2008-07-29
申请人： Chuan Wei Wang , Sheng Ta Lee
发明人： Chuan Wei Wang , Sheng Ta Lee
IPC分类号： H01L21/00 , G01P15/125
CPC分类号： G01P15/125 , B81B2201/0235 , B81C1/00182 , G01P15/0802 , G01P2015/0814
摘要： According to the present invention, an in-plane sensor comprises: a fixed structure including a fixed finger and a fixed column connected to each other, the fixed finger having a supported end supported by the fixed column and a suspended end which is unsupported; and a movable structure including at least one mass body and an extending finger connected to each other; wherein the supported end of the fixed finger is closer to the mass body than the suspended end is.
摘要翻译：根据本发明，面内传感器包括：固定结构，包括固定指状物和彼此连接的固定柱，固定指状物具有由固定柱支撑的支撑端和未被支撑的悬挂端; 以及包括彼此连接的至少一个质量体和延伸指的可移动结构; 其中固定手指的支撑端比悬挂端更靠近质量体。

7. 发明申请

US20110162453A1 MASS FOR USE IN A MICRO-ELECTRO-MECHANICAL-SYSTEM SENSOR AND 3-DIMENSIONAL MICRO-ELECTRO-MECHANICAL-SYSTEM SENSOR USING SAME 有权
标题翻译：用于微电子机械系统传感器的质量和使用其的三维微机电系统传感器
公开(公告)号：US20110162453A1
公开(公告)日：2011-07-07
申请号：US12652108
申请日：2010-01-05
申请人： Chuan-Wei Wang , Sheng-Ta Lee
发明人： Chuan-Wei Wang , Sheng-Ta Lee
IPC分类号： G01P15/125
CPC分类号： G01P15/125 , G01P15/18 , G01P2015/082
摘要： A 3-dimensional MEMS sensor, comprising: a first axis fixed electrode; a second axis fixed electrode; a third axis fixed electrode; a movable electrode frame including a first axis movable electrode, a second axis movable electrode, a third axis movable electrode, and a connection part connecting the movable electrodes, wherein the first axis movable electrode and the first axis fixed electrode form a first capacitor along the first axis, the second axis movable electrode and the second axis fixed electrode form a second capacitor along the second axis, and the third axis movable electrode and the third axis fixed electrode form a third capacitor along the third axis, the connection part including a center mass, wherein the center mass is at least connected with one of the first, second and third axis movable electrodes, and has an outer periphery and a first interconnecting segment connecting at least two adjacent sides of the outer periphery; at least one spring connecting with the movable electrode frame; and at least one anchor connecting with the spring, wherein the first, second and third axes are not parallel to one another such that they define a 3-dimensional coordinate system.
摘要翻译： 3维MEMS传感器，包括：第一轴固定电极; 第二轴固定电极; 第三轴固定电极; 可动电极框架，包括第一轴可动电极，第二轴可动电极，第三轴可动电极和连接可动电极的连接部，其中，所述第一轴可动电极和所述第一轴固定电极沿着所述可动电极形成第一电容器第一轴，第二轴可动电极和第二轴固定电极沿着第二轴形成第二电容器，第三轴可动电极和第三轴固定电极沿着第三轴形成第三电容器，连接部分包括中心其中所述中心质量体至少与所述第一，第二和第三轴可动电极中的一个连接，并且具有外周和连接所述外周的至少两个相邻侧的第一互连段; 与可动电极框架连接的至少一个弹簧; 以及与弹簧连接的至少一个锚固件，其中所述第一，第二和第三轴线彼此不平行，使得它们限定三维坐标系。

8. 发明申请

US20110127620A1 MEMS INTEGRATED CHIP AND METHOD FOR MAKING SAME 失效
标题翻译： MEMS集成芯片及其制造方法
公开(公告)号：US20110127620A1
公开(公告)日：2011-06-02
申请号：US12627480
申请日：2009-11-30
申请人： Chuan-Wei Wang , Sheng-Ta Lee , Hsin-Hui Hsu , Wei-Chung Wang
发明人： Chuan-Wei Wang , Sheng-Ta Lee , Hsin-Hui Hsu , Wei-Chung Wang
IPC分类号： H01L29/84 , H01L21/50
CPC分类号： H01L23/481 , B81B2207/07 , B81C1/00246 , B81C2203/0714 , B81C2203/0735 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： The present invention discloses a MEMS (Micro-Electro-Mechanical System) chip and a method for making the MEMS chip. The MEMS chip comprises: a first substrate having a first surface and a second surface opposing each other; a microelectronic device area on the first surface; a first MEMS device area on the second surface; and a conductive interconnection structure electrically connecting the microelectronic device area and the first MEMS device area.
摘要翻译：本发明公开了一种MEMS（微电子机械系统）芯片及其制造方法。 MEMS芯片包括：具有第一表面和彼此相对的第二表面的第一基板; 第一表面上的微电子器件区域; 第二表面上的第一MEMS器件区域; 以及电连接微电子器件区域和第一MEMS器件区域的导电互连结构。

9. 发明申请

US20110037132A1 MEMS PACKAGE STRUCTURE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译： MEMS包装结构及其制造方法
公开(公告)号：US20110037132A1
公开(公告)日：2011-02-17
申请号：US12837922
申请日：2010-07-16
申请人： Hsin-Hui Hsu , Sheng-Ta Lee , Chuan-Wei Wang
发明人： Hsin-Hui Hsu , Sheng-Ta Lee , Chuan-Wei Wang
IPC分类号： H01L23/00 , H01L21/50 , H01L29/84
CPC分类号： B81B7/0058 , B81B7/0006 , B81B2201/0264 , B81C1/00246 , B81C1/00293 , B81C2203/0136 , B81C2203/0145 , B81C2203/0714 , B81C2203/0735
摘要： A method for fabricating MEMS package structure includes the following steps. Firstly, a substrate is provided. Next, a plurality of lower metallic layers and first oxide layers are formed to compose a MEMS structure and an interconnecting structure. Next, an upper metallic layer is formed on the MEMS structure and the interconnecting structure. The upper metallic layer has a first opening and a second opening. Next, the first opening and the second opening are employed as etching channels to remove a portion of the first oxide layers so as to form a first cavity surrounding the MEMS structure and form a second cavity above the interconnecting structure. The first cavity communicates with the second cavity. Next, the second opening is sealed in a vacuum environment. Next, a packaging element is formed on the upper metallic layer in a non-vacuum environment to seal the first opening.
摘要翻译：制造MEMS封装结构的方法包括以下步骤。首先，提供基板。接下来，形成多个下金属层和第一氧化物层以构成MEMS结构和互连结构。接下来，在MEMS结构和互连结构上形成上金属层。上金属层具有第一开口和第二开口。接下来，使用第一开口和第二开口作为蚀刻通道去除一部分第一氧化物层，以便形成围绕MEMS结构的第一腔，并在互连结构之上形成第二腔。第一腔与第二腔连通。接下来，将第二开口密封在真空环境中。接下来，在非真空环境中在上金属层上形成封装元件以密封第一开口。

10. 发明申请

US20100120257A1 METHOD FOR MAKING MICRO-ELECTRO-MECHANICAL SYSTEM DEVICE 有权
标题翻译：制造微电子机械系统装置的方法
公开(公告)号：US20100120257A1
公开(公告)日：2010-05-13
申请号：US12270804
申请日：2008-11-13
申请人： CHUAN WEI WANG , Sheng Ta Lee
发明人： CHUAN WEI WANG , Sheng Ta Lee
IPC分类号： H01L21/306
CPC分类号： B81C1/00246 , B81C2203/0714
摘要： The present invention discloses a method for making a MEMS device, comprising: providing a zero-layer substrate; forming a MEMS device region on the substrate, wherein the MEMS device region is provided with a first sacrificial region to separate a suspension structure of the MEMS device from another part of the MEMS device; removing the first sacrificial region by etching; and micromachining the zero-layer substrate.
摘要翻译：本发明公开了一种制造MEMS器件的方法，包括：提供零层衬底; 在所述衬底上形成MEMS器件区域，其中所述MEMS器件区域设置有第一牺牲区域以将所述MEMS器件的悬架结构与所述MEMS器件的另一部分分离; 通过蚀刻去除第一牺牲区域; 并微加工零层衬底。

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