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1. 发明授权

US08952463B2 MEMS structure preventing stiction 有权
标题翻译： MEMS结构防止静电
公开(公告)号：US08952463B2
公开(公告)日：2015-02-10
申请号：US12800829
申请日：2010-05-24
申请人： Chuan-Wei Wang , Sheng-Ta Lee , Hsin-Hui Hsu
发明人： Chuan-Wei Wang , Sheng-Ta Lee , Hsin-Hui Hsu
IPC分类号： H01L27/14 , B81B3/00
CPC分类号： B81B3/001
摘要： A MEMS (Micro-Electro-Mechanical-System) structure preventing stiction, comprising: a substrate; and at least two structural layers above the substrate, wherein at least one of the at least two structural layers is a movable part, and anyone or more of the at least two structural layers is provided with at least one bump to prevent the movable part from sticking to another portion of the MEMS structure.
摘要翻译：一种防止静电的MEMS（微电子机械系统）结构，包括：基板; 以及至少两个结构层，其中所述至少两个结构层中的至少一个是可移动部分，并且所述至少两个结构层中的任何一个或多个设置有至少一个凸起，以防止所述可移动部件粘附到MEMS结构的另一部分。

2. 发明授权

US08729660B2 MEMS integrated chip with cross-area interconnection 有权
公开(公告)号：US08729660B2
公开(公告)日：2014-05-20
申请号：US13214709
申请日：2011-08-22
申请人： Hsin-Hui Hsu , Chuan-Wei Wang , Sheng-Ta Lee
发明人： Hsin-Hui Hsu , Chuan-Wei Wang , Sheng-Ta Lee
IPC分类号： H01L21/70 , H01L29/84
CPC分类号： B81C1/00238
摘要： The present invention discloses a MEMS (Micro-Electro-Mechanical System) integrated chip with cross-area interconnection, comprising: a substrate; a MEMS device area on the substrate; a microelectronic device area on the substrate; a guard ring separating the MEMS device area and the microelectronic device area; and a conductive layer on the surface of the substrate below the guard ring, or a well in the substrate below the guard ring, as a cross-area interconnection electrically connecting the MEMS device area and the microelectronic device area.

3. 发明申请

US20110037160A1 MICROELECTRONIC DEVICE AND FABRICATING METHOD THEREOF AND MEMS PACKAGE STRUCTURE AND FABRICATING METHOD THEREOF 有权
标题翻译：微电子器件及其制造方法及MEMS封装结构及其制作方法
公开(公告)号：US20110037160A1
公开(公告)日：2011-02-17
申请号：US12756558
申请日：2010-04-08
申请人： Hsin-Hui HSU , Sheng-Ta Lee , Chuan-Wei Wang
发明人： Hsin-Hui HSU , Sheng-Ta Lee , Chuan-Wei Wang
IPC分类号： H01L23/52 , H01L21/768 , H01L31/18 , H01L21/60 , H01L23/48
CPC分类号： B81B3/0018 , B81C1/00015 , B81C1/00246 , B81C1/00333 , B81C2203/0145 , B81C2203/0714 , H01L21/768 , H01L27/1443 , H01L27/14632
摘要： A fabricating method of a microelectronic device including the following steps is provided. First, a substrate is provided. Second, a semi-conductor element is formed in a CMOS circuit region of the substrate. Next, a plurality of metallic layer, a plurality of contact plugs and a plurality of oxide layer are formed on the substrate. The metallic layers and the oxide layers are interlaced with each other and the contact plugs are formed in the oxide layers and connected with the metallic layers correspondingly so as to form a micro electromechanical system (MEMS) structure within a MEMS region and an interconnecting structure within the CMOS circuit region. Then, a first protective layer is formed on at least one of the oxide layers and a second protective layer is formed on the interconnecting structure. Predetermined portions of the oxide layers located within the MEMS region are removed and thereby the MEMS structure is partially suspended above the substrate. The present invention also provides a microelectronic device, a MEMS package structure and a fabricating method thereof
摘要翻译：提供了一种包括以下步骤的微电子器件的制造方法。首先，提供基板。第二，半导体元件形成在衬底的CMOS电路区域中。接下来，在基板上形成多个金属层，多个接触插塞和多个氧化物层。金属层和氧化物层彼此交织并且接触塞形成在氧化物层中并且相应地与金属层连接，以便在MEMS区域内形成微机电系统（MEMS）结构，并且在MEMS区域内形成互连结构 CMOS电路区域。然后，在至少一个氧化物层上形成第一保护层，在互连结构上形成第二保护层。位于MEMS区域内的氧化物层的预定部分被去除，从而将MEMS结构部分地悬置在衬底上。本发明还提供一种微电子器件，一种MEMS封装结构及其制造方法

4. 发明授权

US08829628B2 MEMS package structure 有权
标题翻译： MEMS封装结构
公开(公告)号：US08829628B2
公开(公告)日：2014-09-09
申请号：US13535682
申请日：2012-06-28
申请人： Hsin-Hui Hsu , Sheng-Ta Lee , Chuan-Wei Wang
发明人： Hsin-Hui Hsu , Sheng-Ta Lee , Chuan-Wei Wang
IPC分类号： H01L23/29 , H01L23/31 , B81C1/00
CPC分类号： B81B7/0058 , B81B7/0006 , B81B2201/0264 , B81C1/00246 , B81C1/00293 , B81C2203/0136 , B81C2203/0145 , B81C2203/0714 , B81C2203/0735
摘要： A MEMS package structure, including a substrate, an interconnecting structure, an upper metallic layer, a deposition element and a packaging element is provided. The interconnecting structure is disposed on the substrate. The MEMS structure is disposed on the substrate and within a first cavity. The upper metallic layer is disposed above the MEMS structure and the interconnecting structure, so as to form a second cavity located between the upper metallic layer and the interconnecting structure and communicates with the first cavity. The upper metallic layer has at least a first opening located above the interconnecting structure and at least a second opening located above the MEMS structure. Area of the first opening is greater than that of the second opening. The deposition element is disposed above the upper metallic layer to seal the second opening. The packaging element is disposed above the upper metallic layer to seal the first opening.
摘要翻译：提供了包括基板，互连结构，上金属层，沉积元件和封装元件的MEMS封装结构。互连结构设置在基板上。 MEMS结构设置在基板上并在第一腔内。上金属层设置在MEMS结构和互连结构之上，以便形成位于上金属层和互连结构之间的第二腔，并与第一腔连通。上金属层具有位于互连结构上方的至少第一开口和位于MEMS结构上方的至少第二开口。第一开口的面积大于第二开口的面积。沉积元件设置在上金属层上方以密封第二开口。包装元件设置在上金属层上方以密封第一开口。

5. 发明授权

US08329492B2 Micro electronic device and method for fabricating micro electromechanical system resonator thereof 有权
标题翻译：微电子器件及其制造微机电系统谐振器的方法
公开(公告)号：US08329492B2
公开(公告)日：2012-12-11
申请号：US12819278
申请日：2010-06-21
申请人： Chuan-Wei Wang , Hsin-Hui Hsu , Sheng-Ta Lee
发明人： Chuan-Wei Wang , Hsin-Hui Hsu , Sheng-Ta Lee
IPC分类号： H01L21/467
CPC分类号： B81C1/00246 , B81B2201/0271 , B81C1/00182 , B81C2203/0714 , H03H3/0073
摘要： A method for fabricating a MEMS resonator is provided. A stacked main body including a silicon substrate, a plurality of metallic layers and an isolation layer is formed and has a first etching channel extending from the metallic layers into the silicon substrate. The isolation layer is filled in the first etching channel. The stacked main body also has a predetermined suspended portion. Subsequently, a portion of the isolation layer is removed so that a second etching channel is formed and the remained portion of the isolation layer covers an inner sidewall of the first etching channel. Afterwards, employing the isolation layer that covers the inner sidewall of the first etching channel as a mask, an isotropic etching process through the second etching channel is applied to the silicon substrate, thereby forming the MEMS resonator suspending above the silicon substrate. The method for fabricating MEMS resonator can be integrated with the process of fabricating the CMOS circuit, thereby the process of fabricating a microelectronic device can be simplified and the cost of fabricating a micro electronic device can be reduced. A micro electronic device is also provided in the present invention.
摘要翻译：提供了一种用于制造MEMS谐振器的方法。形成包括硅衬底，多个金属层和隔离层的堆叠主体，并且具有从金属层延伸到硅衬底中的第一蚀刻通道。隔离层填充在第一蚀刻通道中。堆叠的主体还具有预定的悬挂部分。随后，去除隔离层的一部分，使得形成第二蚀刻通道，并且隔离层的剩余部分覆盖第一蚀刻通道的内侧壁。然后，使用覆盖第一蚀刻通道的内侧壁的隔离层作为掩模，通过第二蚀刻通道的各向同性蚀刻工艺被施加到硅衬底，从而形成悬浮在硅衬底之上的MEMS谐振器。制造MEMS谐振器的方法可以与制造CMOS电路的过程集成，从而可以简化微电子器件的制造工艺，并且可以降低制造微电子器件的成本。本发明还提供微电子装置。

6. 发明授权

US08513041B2 MEMS integrated chip and method for making same 失效
标题翻译： MEMS集成芯片及其制造方法
公开(公告)号：US08513041B2
公开(公告)日：2013-08-20
申请号：US12627480
申请日：2009-11-30
申请人： Chuan-Wei Wang , Sheng-Ta Lee , Hsin-Hui Hsu , Wei-Chung Wang
发明人： Chuan-Wei Wang , Sheng-Ta Lee , Hsin-Hui Hsu , Wei-Chung Wang
IPC分类号： H01L21/00
CPC分类号： H01L23/481 , B81B2207/07 , B81C1/00246 , B81C2203/0714 , B81C2203/0735 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： The present invention discloses a MEMS (Micro-Electro-Mechanical System) chip and a method for making the MEMS chip. The MEMS chip comprises: a first substrate having a first surface and a second surface opposing each other; a microelectronic device area on the first surface; a first MEMS device area on the second surface; and a conductive interconnection structure electrically connecting the microelectronic device area and the first MEMS device area.
摘要翻译：本发明公开了一种MEMS（微电子机械系统）芯片及其制造方法。 MEMS芯片包括：具有第一表面和彼此相对的第二表面的第一基板; 第一表面上的微电子器件区域; 第二表面上的第一MEMS器件区域; 以及电连接微电子器件区域和第一MEMS器件区域的导电互连结构。

7. 发明申请

US20110236805A1 MEMS lithography mask with improved tungsten deposition topography and method for the same 有权
标题翻译：具有改进的钨沉积形貌的MEMS光刻掩模及其方法
公开(公告)号：US20110236805A1
公开(公告)日：2011-09-29
申请号：US12802209
申请日：2010-06-02
申请人： Hsin-Hui Hsu , Chuan-Wei Wang , Sheng-Ta Lee , Chih-Hung Lu
发明人： Hsin-Hui Hsu , Chuan-Wei Wang , Sheng-Ta Lee , Chih-Hung Lu
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F1/36 , B81B2207/07 , B81C1/00404 , G02B26/0833
摘要： The present invention discloses a MEMS lithography mask with improved tungsten deposition topography and a method for making the same. The MEMS lithography mask includes: a pattern including at least two sections forming a conjunction with each other, each of the at least two sections having a width not less than a minimum width, the conjunction having a center and a plurality of corners, wherein at least one of the corners is inwardly recessed to reduce a width of the conjunction, the sections being for defining trenches on a substrate to be filled with tungsten as apart of a MEMS device, whereby the lowest height of the tungsten surface is not lower than 80% of the trench height.
摘要翻译：本发明公开了一种具有改善的钨沉积形貌的MEMS光刻掩模及其制造方法。 MEMS光刻掩模包括：包括形成彼此连接的至少两个部分的图案，所述至少两个部分中的每一个具有不小于最小宽度的宽度，所述连接具有中心和多个拐角，其中在至少一个拐角向内凹进以减小连接的宽度，这些部分用于限定衬底上的沟槽，以将钨填充为MEMS器件的分开，由此钨表面的最低高度不低于80 沟槽高度的百分比。

8. 发明授权

US08704331B2 MEMS integrated chip with cross-area interconnection 有权
标题翻译： MEMS集成芯片具有跨区域互连
公开(公告)号：US08704331B2
公开(公告)日：2014-04-22
申请号：US13214785
申请日：2011-08-22
申请人： Hsin-Hui Hsu , Chuan-Wei Wang , Sheng-Ta Lee
发明人： Hsin-Hui Hsu , Chuan-Wei Wang , Sheng-Ta Lee
IPC分类号： H01L21/768 , H01L29/84
CPC分类号： B81C1/00238
摘要： The present invention discloses a MEMS (Micro-Electro-Mechanical System) integrated chip with cross-area interconnection, comprising: a substrate; a MEMS device area on the substrate; a microelectronic device area on the substrate; a guard ring separating the MEMS device area and the microelectronic device area; and a conductive layer on the surface of the substrate below the guard ring, or a well in the substrate below the guard ring, as a cross-area interconnection electrically connecting the MEMS device area and the microelectronic device area.
摘要翻译：本发明公开了一种具有跨区域互连的MEMS（微电子机械系统）集成芯片，包括：基板; 衬底上的MEMS器件区域; 衬底上的微电子器件区域; 分离MEMS器件区域和微电子器件区域的保护环; 以及位于保护环下方的衬底的表面上的导电层，或保护环下方的衬底中的阱，作为将MEMS器件区域和微电子器件区域电连接的跨区域互连。

9. 发明授权

US08247253B2 MEMS package structure and method for fabricating the same 有权
标题翻译： MEMS封装结构及其制造方法
公开(公告)号：US08247253B2
公开(公告)日：2012-08-21
申请号：US12837922
申请日：2010-07-16
申请人： Hsin-Hui Hsu , Sheng-Ta Lee , Chuan-Wei Wang
发明人： Hsin-Hui Hsu , Sheng-Ta Lee , Chuan-Wei Wang
IPC分类号： H01L21/3213 , H01L21/56
CPC分类号： B81B7/0058 , B81B7/0006 , B81B2201/0264 , B81C1/00246 , B81C1/00293 , B81C2203/0136 , B81C2203/0145 , B81C2203/0714 , B81C2203/0735
摘要： A method for fabricating MEMS package structure includes the following steps. Firstly, a substrate is provided. Next, a plurality of lower metallic layers and first oxide layers are formed to compose a MEMS structure and an interconnecting structure. Next, an upper metallic layer is formed on the MEMS structure and the interconnecting structure. The upper metallic layer has a first opening and a second opening. Next, the first opening and the second opening are employed as etching channels to remove a portion of the first oxide layers so as to form a first cavity surrounding the MEMS structure and form a second cavity above the interconnecting structure. The first cavity communicates with the second cavity. Next, the second opening is sealed in a vacuum environment. Next, a packaging element is formed on the upper metallic layer in a non-vacuum environment to seal the first opening.
摘要翻译：制造MEMS封装结构的方法包括以下步骤。首先，提供基板。接下来，形成多个下金属层和第一氧化物层以构成MEMS结构和互连结构。接下来，在MEMS结构和互连结构上形成上金属层。上金属层具有第一开口和第二开口。接下来，使用第一开口和第二开口作为蚀刻通道去除一部分第一氧化物层，以便形成围绕MEMS结构的第一腔，并在互连结构之上形成第二腔。第一腔与第二腔连通。接下来，将第二开口密封在真空环境中。接下来，在非真空环境中在上金属层上形成封装元件以密封第一开口。

10. 发明授权

US08174056B2 Substrate-level interconnection and micro-electro-mechanical system 有权
标题翻译：基板级互连和微机电系统
公开(公告)号：US08174056B2
公开(公告)日：2012-05-08
申请号：US12435626
申请日：2009-05-05
申请人： Sheng-Ta Lee , Chuan-Wei Wang , Hsin-Hui Hsu
发明人： Sheng-Ta Lee , Chuan-Wei Wang , Hsin-Hui Hsu
IPC分类号： H01L29/84
CPC分类号： H01L23/485 , B81C1/00238 , H01L21/76895 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A micro-electro mechanical system (MEMS) is disclosed, which comprises a substrate; at least one transistor formed on the substrate and electrically connected with a contact plug; at least one MEMS device; and a local interconnection line at the same level of the contact plug, through which the MEMS device is coupled to the transistor.
摘要翻译：公开了一种微机电系统（MEMS），其包括基板; 至少一个晶体管，形成在所述衬底上并与接触插塞电连接; 至少一个MEMS器件; 以及在接触插头的相同电平处的局部互连线，MEMS器件通过该互连线耦合到晶体管。

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