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1. 发明申请

US20090188560A1 Concentrating photovoltaic apparatus 审中-公开
标题翻译：集中光伏装置
公开(公告)号：US20090188560A1
公开(公告)日：2009-07-30
申请号：US12010663
申请日：2008-01-29
申请人： Sen-Tien Lee , Yen-Chang Tzeng , Chung-Chieh Cheng , Chi-Yuan Chen
发明人： Sen-Tien Lee , Yen-Chang Tzeng , Chung-Chieh Cheng , Chi-Yuan Chen
IPC分类号： H01L31/052
CPC分类号： H01L31/0543 , H02S40/42 , Y02E10/52
摘要： A concentrating photovoltaic (CPV) apparatus includes at least one lens unit, at least one solar cell chip unit, and a frame structure. The frame structure includes at least two opposite main walls, a plurality of upper and lower support bars extended between and connected to the two main walls, and two sidewalls. The main walls are each provided with at a predetermined position with at least one air opening and at two lateral ends with a first and a second connecting portion. Two ends of the upper and lower support bars are connected to the first and the second connecting portions, allowing the lens unit and the solar cell chip unit to be supported on and fixed to the upper and the lower support bars, respectively.
摘要翻译：集中光伏（CPV）设备包括至少一个透镜单元，至少一个太阳能电池芯片单元和框架结构。框架结构包括至少两个相对的主壁，在两个主壁之间延伸并连接到两个主壁之间的多个上和下支撑杆以及两个侧壁。主壁各自设置在具有至少一个空气开口的预定位置处，并且在两个侧端处设置有第一和第二连接部分。上支撑杆和下支撑杆的两端连接到第一和第二连接部分，允许透镜单元和太阳能电池芯片单元分别支撑并固定到上支撑杆和下支撑杆上。

2. 发明申请

US20090159127A1 Concentration solar cell chip packaging structure and method of forming the same 审中-公开
标题翻译：集中太阳能电池芯片的封装结构及其形成方法
公开(公告)号：US20090159127A1
公开(公告)日：2009-06-25
申请号：US12003089
申请日：2007-12-20
申请人： Sen-Tien Lee , Yen-Chang Tzeng
发明人： Sen-Tien Lee , Yen-Chang Tzeng
IPC分类号： H01L31/024 , H01L31/04 , H01R43/00
CPC分类号： H01L31/18 , H01L31/024 , H01L31/048 , H01L31/054 , Y02E10/52 , Y10T29/49117
摘要： In a method of forming a concentration solar cell chip packaging structure, at least one solar cell chip is mounted on an electrically conducting plate, and the solar cell chip along with the conducting plate are encapsulated in a package made of a highly light-pervious and shock-absorbing polymer material. Moreover, a thin layer of low-iron, high-strength, and light-pervious material is attached to an outer surface of the polymer package. With the above method, the concentration solar cell chip packaging structure may be formed with shortened processing time and improved processing quality to give the packaged solar cell increased light transmittance and prolonged usable life.
摘要翻译：在形成集中太阳能电池芯片封装结构的方法中，至少一个太阳能电池芯片安装在导电板上，并且太阳能电池芯片与导电板一起被封装在由高透光性和减震聚合物材料。而且，将低铁，高强度和透光材料的薄层附着在聚合物封装的外表面上。利用上述方法，太阳能电池芯片的集中封装结构可以缩短处理时间并提高处理质量，从而使封装太阳能电池提高透光率和延长使用寿命。

3. 发明授权

US06417522B1 Led with alternated strain layer 有权
标题翻译：带交替应变层
公开(公告)号：US06417522B1
公开(公告)日：2002-07-09
申请号：US09451357
申请日：1999-12-02
申请人： Wang Nang Wang , Stephen Sen-Tien Lee
发明人： Wang Nang Wang , Stephen Sen-Tien Lee
IPC分类号： H01L2715
CPC分类号： H01L33/30 , B82Y20/00 , H01L33/06 , H01S5/3216 , H01S5/3406
摘要： The present invention relates to light omitting diodes having an AlGaInP active layer disposed between two cladding layers of AlGaInP, with a strain layer grown on the second cladding layer and comprising a superlattice structure in the form of a plurality of thin alternated AlGaInP layers with preselected composition. In one embodiment, the composition of the alternated AlGaInP layers is an ohmic n-electrode on a rear surface of a GaAs substrate: a distributed AlGaAs Bragg reflecting layer in the form of a multi-layer lamination; a first, lower AlGaInP cladding layer grown on the reflecting layer; an AlGaInP active layer grown on the lower cladding layer; a second, upper AlGaInP cladding layer grown on the active layer; a strain layer grown on the second cladding layer, the strain layer comprising a superlattice structure in the form of a plurality of thin alternated AlGaInP layers with the composition: (AlxGa1-x)1-yInyP/(AlnGa1-n)1-hInhP, where 0.5≦x≦1; 0.4≦y≦0.6/0≦a≦0.4; 0≦b≦0.4.
摘要翻译：本发明涉及具有设置在AlGaInP的两个包覆层之间的AlGaInP有源层的省略二极管，其中在第二覆层上生长的应变层包括具有预选组成的多个具有选定组成的交替AlGaInP层的超晶格结构。在一个实施例中，交替的AlGaInP层的组成是在GaAs衬底的后表面上的欧姆n电极：多层层叠形式的分布式AlGaAs布拉格反射层; 在反射层上生长的第一低AlGaInP包覆层; 在下包层上生长的AlGaInP有源层; 在有源层上生长的第二AlGaInP包层; 应变层，其包括具有以下组成的多个薄的交替AlGaInP层的超晶格结构：（Al x Ga 1-x）1-y In yP /（Al n Ga 1-n）1 -h InhP，其中0.5 <= x <= 1; 0.4 <= y <= 0.6 / 0 <= a <= 0.4; 0 <=b≤0.4。

4. 发明授权

US06130445A LED with AlGaInP Bragg layer 失效
标题翻译： LED与AlGaInP布拉格层
公开(公告)号：US06130445A
公开(公告)日：2000-10-10
申请号：US451356
申请日：1999-12-02
申请人： Wang Nang Wang , Stephen Sen-Tien Lee
发明人： Wang Nang Wang , Stephen Sen-Tien Lee
IPC分类号： H01L33/10 , H01L33/30 , H01S5/20 , H01L33/00 , H01S3/19
CPC分类号： H01L33/30 , H01L33/10 , H01S5/20 , H01S5/2004
摘要： A semiconductor light emitting device includes two AlGaAs and AlGaInP Bragg reflector layers below an active layer.
摘要翻译：半导体发光器件包括在有源层下面的两个AlGaAs和AlGaInP布拉格反射器层。

5. 发明申请

US20090320901A1 CONCENTRATION PHOTOVOLTAIC CELL SYSTEM WITH LIGHT GUIDE 审中-公开
标题翻译：浓缩光电池系统与光指导
公开(公告)号：US20090320901A1
公开(公告)日：2009-12-31
申请号：US12145939
申请日：2008-06-25
申请人： Sen-Tien LEE , Yen-Chang TZENG , Chin-Wei HSU , Chung-Yi HUANG
发明人： Sen-Tien LEE , Yen-Chang TZENG , Chin-Wei HSU , Chung-Yi HUANG
IPC分类号： H01L31/042
CPC分类号： H01L31/0543 , H01L31/0547 , Y02E10/52
摘要： A concentration photovoltaic cell system with light guide includes a concentrator for focusing sunlight; a light guide located at where the sunlight is focused by the concentrator, so that the focused light is fully coupled to an input end of the light guide and propagates to an output end of the light guide; and a solar energy converter arranged at the output end of the light guide for receiving and converting the light projected from the light guide into electric energy. With the above arrangements, the solar converter may be located at a place not exposed to sunlight to avoid lowered energy conversion efficiency caused by temperature rising at photovoltaic cell chips thereof, and the use of the light guide enables increased GCR and light concentrating efficiency to enable reduced number of expensive photovoltaic cells.
摘要翻译：具有光导的集中光伏电池系统包括用于聚焦太阳光的聚光器; 位于太阳光被聚光器聚焦的光导，使得聚焦的光完全耦合到光导的输入端并传播到光导的输出端; 以及布置在光导的输出端的太阳能转换器，用于接收并将从光导投影的光转换成电能。通过上述布置，太阳能转换器可以位于不暴露于阳光的地方，以避免由于其太阳能电池芯片的温度升高而导致的能量转换效率降低，并且使用光导能够提高GCR和聚光效率，以使能减少昂贵的光伏电池数量。

6. 发明授权

US07011711B2 Chemical vapor deposition reactor 失效
标题翻译：化学气相沉积反应器
公开(公告)号：US07011711B2
公开(公告)日：2006-03-14
申请号：US10445233
申请日：2003-05-23
申请人： Yury Georgievich Shreter , Yury Toomasovich Rebane , Ruslan Ivanovich Gorbunov , Sergey Igorevich Stepanov , Vladislav Evgenievich Bougrov , Vladimir Nikolaev , Maxim Nikolaevich Blashenkov , Alexander Nikolaevich Andreev , Stephen Sen-Tien Lee
发明人： Yury Georgievich Shreter , Yury Toomasovich Rebane , Ruslan Ivanovich Gorbunov , Sergey Igorevich Stepanov , Vladislav Evgenievich Bougrov , Vladimir Nikolaev , Maxim Nikolaevich Blashenkov , Alexander Nikolaevich Andreev , Stephen Sen-Tien Lee
IPC分类号： C23C16/00 , C23C16/455 , C23C16/452 , C23C16/34
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45559 , C23C16/45568 , C23C16/45591 , C23C16/46 , C30B25/02 , C30B25/14 , C30B29/406
摘要： A chemical vapor deposition reactor for depositing a thin film on at least a substrate through a reaction between a vertical input reagent gas flow and the at least a substrate is provided, in which a vertical output reagent gas flow is produced after the reaction. The reactor includes a vertical tube, at least a reaction chamber located inside the vertical tube, an input flow baffle located on the at least a reaction chamber, and at least a gas exit installed on the at least a reaction chamber for exhausting the vertical input reagent gas flow and the vertical output reagent gas flow. In addition, the substrate is located at the bottom of the at least a reaction chamber. The provided reactors allow the achievement of more efficient heating process, lower gas consumption and higher growth uniformity than the conventional reactors.
摘要翻译：提供一种化学气相沉积反应器，用于通过垂直输入反应气流与至少一基板之间的反应在至少一基板上沉积薄膜，其中在反应之后产生垂直输出反应气流。反应器包括垂直管，位于垂直管内部的至少一个反应室，位于至少一个反应室上的输入流动挡板，以及至少一个安装在至少一个反应室上用于排出垂直输入的气体出口反应气流和垂直输出反应气流。另外，衬底位于至少一个反应室的底部。所提供的反应器允许实现比常规反应器更有效的加热过程，更低的气体消耗和更高的生长均匀性。

7. 发明授权

US06396862B1 LED with spreading layer 有权
标题翻译： LED与扩散层
公开(公告)号：US06396862B1
公开(公告)日：2002-05-28
申请号：US09453980
申请日：1999-12-02
申请人： Wang Nang Wang , Stephen Sen-Tien Lee
发明人： Wang Nang Wang , Stephen Sen-Tien Lee
IPC分类号： H01S500
CPC分类号： H01L33/30 , H01L33/02 , H01L33/14 , H01S5/0421 , H01S5/2004
摘要： A semiconductor device has a window layer (8), a current spreading layer (7) below the window layer and a cladding layer (6) below the current spreading layer. The band gap energy of the spreading layer is higher than that of the window layer and lower than that of the cladding layer and the carrier concentration of the spreading layer is lower than that of the window layer and higher than that of the cladding layer.
摘要翻译：半导体器件具有窗口层（8），窗口下方的电流扩展层（7）和电流扩展层下面的覆层（6）。扩散层的带隙能量高于窗口层的带隙能量，低于包层的带隙能量，并且扩散层的载流子浓度低于窗口层的载流子浓度，并且高于包层的载流子浓度。

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