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1. 发明授权

US09025389B2 Erasing method of non-volatile memory device 有权
标题翻译：非易失性存储器件的擦除方法
公开(公告)号：US09025389B2
公开(公告)日：2015-05-05
申请号：US13606627
申请日：2012-09-07
申请人： Se-Hyun Kim
发明人： Se-Hyun Kim
IPC分类号： G11C16/16 , G11C11/56 , G11C16/04 , G11C16/14
CPC分类号： G11C16/16 , G11C11/5635 , G11C16/0483 , G11C16/14 , G11C2211/5648
摘要： A method for erasing a first sub-block of a plurality of sub-blocks included in a block of a non-volatile memory device, wherein the first sub-block includes at least one word line, includes applying an erase voltage to a substrate, applying a third voltage lower than the erase voltage to the word line of the first sub-block, applying a first voltage at least one word line adjacent to the word line of the first sub-block, and applying a second voltage that is the same as or similar to the erase voltage to the other word lines, where the first voltage has a level between the third voltage and the second voltage.
摘要翻译：一种用于擦除包含在非易失性存储器件的块中的多个子块的第一子块的方法，其中所述第一子块包括至少一个字线，包括向衬底施加擦除电压，将低于擦除电压的第三电压施加到第一子块的字线，对与第一子块的字线相邻的至少一个字线施加第一电压，并施加相同的第二电压与其它字线的擦除电压一样或类似，其中第一电压具有第三电压和第二电压之间的电平。

2. 发明申请

US20130099298A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130099298A1
公开(公告)日：2013-04-25
申请号：US13350519
申请日：2012-01-13
申请人： Se Hyun KIM
发明人： Se Hyun KIM
IPC分类号： H01L27/108 , H01L21/28 , H01L29/78
CPC分类号： H01L29/42356 , H01L27/10876 , H01L27/10891 , H01L27/10894
摘要： A semiconductor device comprises a buried gate formed in a mat and in an adjacent dummy region. A space larger than is conventional is formed in a dummy region of a mat edge where the buried gate is to be created. This larger space inhibits shortening of an end of a buried gate and reduction in pattern size attributable to lithographic distortion arising between patterned (mat) and unpatterned (dummy) regions. Device reliability is thereby improved by avoiding gap-fill defects of a gate material.
摘要翻译：半导体器件包括形成在垫中和相邻的虚拟区域中的掩埋栅极。在要形成掩埋栅的垫边缘的虚拟区域中形成大于常规的空间。这种更大的空间抑制了掩埋栅极的端部缩短，并且由于在图案化（垫）和未图案化（虚拟）区域之间产生的光刻变形而减小了图案尺寸。从而通过避免栅极材料的间隙填充缺陷来改善器件的可靠性。

3. 发明申请

US20120134066A1 MULTI-LAYERED CERAMIC CAPACITOR HAVING DUAL LAYER-ELECTRODE STRUCTURE 有权
标题翻译：具有双层电极结构的多层陶瓷电容器
公开(公告)号：US20120134066A1
公开(公告)日：2012-05-31
申请号：US13302375
申请日：2011-11-22
申请人： Hyun Tae KIM , Jin Ju PARK , Se Hyun KIM , Doo Young KIM , Kyung Nam HWANG
发明人： Hyun Tae KIM , Jin Ju PARK , Se Hyun KIM , Doo Young KIM , Kyung Nam HWANG
IPC分类号： H01G4/008 , H01G4/005
CPC分类号： H01G4/008 , H01G4/2325 , H01G4/30
摘要： There is provided a multi-layered ceramic capacitor having a dual layer-electrode structure formed by applying a dual layer of electrode paste to the multi-layered ceramic capacitor. The multi-layered ceramic capacitor having a dual layer-electrode structure includes a capacitor body having a preset length and width and having a plurality dielectric layers stacked therein, an internal electrode unit formed on the plurality of dielectric layers and having a preset capacitance, and an external electrode unit including first external electrodes respectively formed on both sides of the capacitor body to be electrically connected to internal electrodes, and second external electrodes formed on the first external electrodes.
摘要翻译：提供一种多层陶瓷电容器，其具有通过将双层电极浆料施加到多层陶瓷电容器而形成的双层电极结构。具有双层电极结构的多层陶瓷电容器包括具有预设长度和宽度的电容器体，并且其中堆叠有多个电介质层，形成在多个电介质层上并具有预设电容的内部电极单元，以及外部电极单元包括分别形成在电容器主体的两侧以与内部电极电连接的第一外部电极，以及形成在第一外部电极上的第二外部电极。

4. 发明申请

US20120080746A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120080746A1
公开(公告)日：2012-04-05
申请号：US13315249
申请日：2011-12-08
申请人： Se Hyun KIM
发明人： Se Hyun KIM
IPC分类号： H01L29/78
CPC分类号： H01L23/535 , H01L21/743 , H01L27/10855 , H01L27/10888 , H01L27/10891 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a fabrication method of a semiconductor device to order to increase an operation liability of the semiconductor device. A method for fabricating a semiconductor device comprises forming a recess in a semiconductor substrate, forming a word line in a lower part of the recess, oxidizing a top portion of the word line, and depositing an insulating material in a remained part of the recess.
摘要翻译：这里公开了半导体器件的制造方法，以增加半导体器件的操作负担。一种制造半导体器件的方法包括在半导体衬底中形成凹槽，在凹部的下部形成字线，氧化字线的顶部，以及在凹部的剩余部分中沉积绝缘材料。

5. 发明授权

US07664981B2 Method of restoring source data of hard disk drive and method of reading system information thereof 有权
标题翻译：恢复硬盘驱动器的源数据的方法及其系统信息的读取方法
公开(公告)号：US07664981B2
公开(公告)日：2010-02-16
申请号：US11143847
申请日：2005-06-03
申请人： Se-hyun Kim
发明人： Se-hyun Kim
IPC分类号： G06F11/14
CPC分类号： G06F11/1435
摘要： A method of restoring source data if the source data written in a system region of a hard disk drive and mirror data, which is a copy of the source data, are both damaged, in which the source data is read on a sector basis and error-free sectors and error-generated sectors are determined. The mirror data is read on a sector basis in such a way that sectors corresponding to the error-generated sectors are read. Source data is restored by merging source data read from the error-free sectors and mirror data read from the sectors corresponding to the error-generated sectors.
摘要翻译：如果写入硬盘驱动器的系统区域中的源数据和作为源数据的副本的镜像数据的源数据都被损坏，其中源数据以扇区为基础读取并且错误，则恢复源数据的方法确定了自由扇区和错误生成扇区。以扇区为基础读取镜像数据，使得读出与错误产生的扇区对应的扇区。通过合并从无差错扇区读取的源数据和从对应于错误生成扇区的扇区读取的镜像数据来恢复源数据。

6. 发明申请

US20130107633A1 NONVOLATILE MEMORY DEVICE AND READING METHOD THEREOF 有权
标题翻译：非易失性存储器件及其读取方法
公开(公告)号：US20130107633A1
公开(公告)日：2013-05-02
申请号：US13341472
申请日：2011-12-30
申请人： Se Hyun KIM
发明人： Se Hyun KIM
IPC分类号： G11C16/26
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/0483
摘要： In a method of reading a nonvolatile memory device, the method comprising, a reading operation of reading data of a selected memory cell; and a read retry operation of performing one or more read operations by changing a non-selection read voltage applied to non-selected memory cells until the read operation succeeds, when it is detected that an error has occurred in the operation of reading data.
摘要翻译：在一种非易失性存储器件的读取方法中，该方法包括：读取所选存储单元的数据的读取操作; 以及读取重试操作，当检测到在读取数据的操作中发生错误时，通过改变施加到未选择的存储器单元的非选择读取电压直到读取操作成功来执行一个或多个读取操作。

7. 发明授权

US10108937B2 Method of registering a membership for an electronic payment, system for same, and apparatus and terminal thereof 有权
公开(公告)号：US10108937B2
公开(公告)日：2018-10-23
申请号：US14007599
申请日：2012-09-04
申请人： Won Jun Lee , Dong Phil Lim , Hye Youn Chung , Jong Ho Kim , Se Hyun Kim
发明人： Won Jun Lee , Dong Phil Lim , Hye Youn Chung , Jong Ho Kim , Se Hyun Kim
IPC分类号： G06Q20/06 , G06Q20/40
摘要： The present invention relates to a method of registering a membership for an electronic payment, a system for same, and an apparatus and a terminal thereof. The system according to the present invention includes: a terminal for receiving an application identifier, registering payment means information and processing a membership registration completion, when at least one or more of first authentication information, second authentication information and fourth authentication information input by a user is authenticated; and a membership registration apparatus for, when at least one or more of a first authentication procedure completion signal, a second authentication procedure completion signal and a fourth authentication procedure completion signal is received from the terminal, confirming whether membership application of user information on the terminal is performed, allocating the application identifier to perform electronic payment, and completing membership registration for the user information on the terminal after registering the payment means information.

8. 发明授权

US08634180B2 Multi-layered ceramic capacitor having dual layer-electrode structure 有权
标题翻译：具有双层电极结构的多层陶瓷电容器
公开(公告)号：US08634180B2
公开(公告)日：2014-01-21
申请号：US13302375
申请日：2011-11-22
申请人： Hyun Tae Kim , Jin Ju Park , Se Hyun Kim , Doo Young Kim , Kyung Nam Hwang
发明人： Hyun Tae Kim , Jin Ju Park , Se Hyun Kim , Doo Young Kim , Kyung Nam Hwang
IPC分类号： H01G4/008
CPC分类号： H01G4/008 , H01G4/2325 , H01G4/30
摘要： There is provided a multi-layered ceramic capacitor having a dual layer-electrode structure formed by applying a dual layer of electrode paste to the multi-layered ceramic capacitor. The multi-layered ceramic capacitor having a dual layer-electrode structure includes a capacitor body having a preset length and width and having a plurality dielectric layers stacked therein, an internal electrode unit formed on the plurality of dielectric layers and having a preset capacitance, and an external electrode unit including first external electrodes respectively formed on both sides of the capacitor body to be electrically connected to internal electrodes, and second external electrodes formed on the first external electrodes.
摘要翻译：提供一种多层陶瓷电容器，其具有通过将双层电极浆料施加到多层陶瓷电容器而形成的双层电极结构。具有双层电极结构的多层陶瓷电容器包括具有预设长度和宽度的电容器体，并且其中堆叠有多个电介质层，形成在多个电介质层上并具有预设电容的内部电极单元，以及外部电极单元包括分别形成在电容器主体的两侧以与内部电极电连接的第一外部电极，以及形成在第一外部电极上的第二外部电极。

9. 发明申请

US20130229872A1 ERASING METHOD OF NON-VOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储器件的擦除方法
公开(公告)号：US20130229872A1
公开(公告)日：2013-09-05
申请号：US13606627
申请日：2012-09-07
申请人： Se-Hyun KIM
发明人： Se-Hyun KIM
IPC分类号： G11C16/16
CPC分类号： G11C16/16 , G11C11/5635 , G11C16/0483 , G11C16/14 , G11C2211/5648
摘要： A method for erasing a first sub-block of a plurality of sub-blocks included in a block of a non-volatile memory device, wherein the first sub-block includes at least one word line, includes applying an erase voltage to a substrate, applying a third voltage lower than the erase voltage to the word line of the first sub-block, applying a first voltage at least one word line adjacent to the word line of the first sub-block, and applying a second voltage that is the same as or similar to the erase voltage to the other word lines, where the first voltage has a level between the third voltage and the second voltage.
摘要翻译：一种用于擦除包含在非易失性存储器件的块中的多个子块的第一子块的方法，其中所述第一子块包括至少一个字线，包括向衬底施加擦除电压，将低于擦除电压的第三电压施加到第一子块的字线，对与第一子块的字线相邻的至少一个字线施加第一电压，并施加相同的第二电压与其它字线的擦除电压一样或类似，其中第一电压具有第三电压和第二电压之间的电平。

10. 发明授权

US08023379B2 Defect inspection method and disk drive using same 有权
标题翻译：缺陷检查方法和磁盘驱动器使用相同
公开(公告)号：US08023379B2
公开(公告)日：2011-09-20
申请号：US12417698
申请日：2009-04-03
申请人： Seung-youl Jeong , Se-hyun Kim , Jae-deog Cho
发明人： Seung-youl Jeong , Se-hyun Kim , Jae-deog Cho
IPC分类号： G11B5/09
CPC分类号： G11B20/182 , G11B19/048 , G11B2220/2516
摘要： Provided are a disk defect inspection method and apparatus. The defect inspection method includes; determining an independent recording density value for disk defect detection in relation to disk drive component factors excepting a disk of the disk drive, and performing a disk defect inspection using the independent recording density value for disk defect detection.
摘要翻译：提供了磁盘缺陷检查方法和装置。缺陷检查方法包括：确定与磁盘驱动器的磁盘以外的磁盘驱动器部件系数相关的磁盘缺陷检测的独立记录密度值，以及使用磁盘缺陷检测的独立记录密度值进行磁盘缺陷检查。

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