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    • 6. 发明授权
    • Whispering mode micro-resonator
    • 耳语模式微谐振器
    • US5343490A
    • 1994-08-30
    • US943943
    • 1992-09-11
    • Samuel L. McCall
    • Samuel L. McCall
    • H01L27/15H01L33/00H01S3/06H01S3/083H01S3/094H01S5/00H01S5/042H01S5/10H01S5/18H01S3/05
    • H01S5/1075H01S5/18H01S5/1042
    • Device for electromagnetic emission depends on total internal reflection-on whispering gallery mode cavitation about the periphery of a disk-shaped element of sub-wavelength thickness. As a laser, operating above threshold, the design is alternative to that of the Surface Emitting Laser for integration in integrated circuitry-either all-optic or electro-optic. Operating below threshold, it may serve as a Light Emitting Diode. The same operational considerations-based on improved efficacy for whispering gallery mode devices as due to relevant dimension/s of sub-wavelength thickness-is of consequence for a category of devices serving other than as simple emitters. Such three port devices may serve as switches, modulators, etc.
    • 用于电磁发射的装置取决于围绕亚波长厚度的圆盘形元件的周边的全内反射围绕灯泡模式空化。 作为激光器,高于阈值,该设计可替代表面发射激光器,用于集成电路(无论是全光学还是电光学)。 工作在阈值以下,可用作发光二极管。 相同的操作考虑 - 基于由于子波长厚度的相关维度而提高对语音模式设备的效率的改善 - 对于除了作为简单发射器之外的其它设备而言是重要的。 这样的三端口设备可以用作开关,调制器等
    • 8. 发明授权
    • Apparatus comprising a monolithic nonlinear Fabry-Perot etalon, and
method for producing same
    • 包括单片非线性法布里 - 珀罗标准具的装置及其制造方法
    • US4756606A
    • 1988-07-12
    • US870842
    • 1986-06-05
    • Jack L. JewellSamuel L. McCall, Jr.
    • Jack L. JewellSamuel L. McCall, Jr.
    • G02F1/35G02F1/21G02F3/02G02B5/23G02B5/30H01S3/10
    • G02F1/218G02F3/024
    • The inventive method for forming monolithic nonlinear Fabry-Perot etalons comprises depositing on an appropriate substrate, e.g., a GaAs wafer, a first multilayer mirror, depositing on the first mirror a spacer typically comprising optically nonlinear material, and depositing a second multilayer mirror onto the spacer. Typically, at least one of the mirrors is an active mirror comprising optically nonlinear material. Deposition can be by a known process, e.g., by MBE or MOCVD. Since, inter alia, the method comprises no critical etching steps it can be used to produce high finesse etalons that have uniform properties over relatively large areas. The inventive method can be adapted to the manufacture of transmissive etalons. It can also be used to produce arrays of optically isolated etalons. Devices comprising nonlinear etalons manufactured by the inventive method can be incorporated, for instance, into optical data processing apparatus, or into optical communications apparatus.
    • 用于形成单片非线性法布里 - 珀罗标准具的本发明方法包括在合适的衬底上沉积,例如GaAs晶片,第一多层反射镜,在第一反射镜上沉积通常包括光学非线性材料的间隔物,以及将第二多层反射镜沉积到 间隔 通常,至少一个反射镜是包括光学非线性材料的主动反射镜。 沉积可以通过已知的方法,例如通过MBE或MOCVD。 由于除了其他方面之外,该方法不包括关键的蚀刻步骤,所以可以用它来生产在相对较大的区域上具有均匀性质的高精细标准具。 本发明的方法可以适用于制造透射标准具。 它也可以用于产生光学隔离的标准具阵列。 包括由本发明方法制造的非线性标准具的装置可以例如并入到光学数据处理装置中或光学通信装置中。