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    • 4. 发明授权
    • Manufacturing process of a germanium implanted HBT bipolar transistor
    • 锗注入HBT双极晶体管的制造工艺
    • US06624017B1
    • 2003-09-23
    • US09724563
    • 2000-11-27
    • Salvatore LombardoMaria Concetta NicotraAngelo Pinto
    • Salvatore LombardoMaria Concetta NicotraAngelo Pinto
    • H01L218249
    • H01L29/66242H01L21/26506
    • A process fabricates a vertical structure high carrier mobility transistor on a substrate of crystalline silicon doped with impurities of the N type, the transistor having a collector region located at a lower portion of the substrate. The process includes: defining a window in the semiconductor substrate; providing a first implantation of germanium atoms through said window; providing a second implantation of acceptor dopants through said window to define a base region; applying an RTA treatment, or treatment in an oven, to re-construct the crystal lattice within the semiconductor substrate comprising a silicon/germanium alloy; forming a first thin dielectric layer of silicon dioxide by chemical vapor deposition; depositing a second dielectric layer onto said first dielectric layer; depositing a polysilicon layer onto said second dielectric layer; etching away, within the window region, said first and second dielectric layers, and the polysilicon layer, to expose the base region and form isolation spacers at the window edges; and forming an N-doped emitter in the base and window regions. This fabrication process is specially attentive to the formation of the silicon dioxide SiO2/GexSi1−x interface present in vertical structure HBT transistors, if isolation spacers are to be formed. The fabrication process allows the frequency field of application of HBT transistors to be further extended, while eliminating deviations of the base currents from the ideal.
    • 一种工艺在掺杂有N型杂质的晶体硅的衬底上制造垂直结构的高载流子迁移率晶体管,晶体管具有位于衬底下部的集电极区域。 该方法包括:在半导体衬底中限定窗口; 提供通过所述窗口的锗原子的第一次注入; 提供通过所述窗口的受体掺杂剂的第二次注入以限定基极区域; 在烘箱中进行RTA处理或处理,以重新构建包括硅/锗合金的半导体衬底内的晶格; 通过化学气相沉积形成二氧化硅的第一薄介电层; 将第二介电层沉积到所述第一介电层上; 在所述第二电介质层上沉积多晶硅层; 在窗口区域内蚀刻所述第一和第二介电层以及多晶硅层,以露出基部区域并在窗口边缘处形成隔离间隔物; 以及在基极和窗口区域中形成N掺杂的发射极。 如果要形成隔离间隔物,则该制造工艺特别注意垂直结构HBT晶体管中存在的二氧化硅SiO 2 / G x Si 1-x界面的形成。 制造工艺允许HBT晶体管的应用频率场进一步延长,同时消除基极电流与理想电流的偏差。
    • 8. 发明授权
    • Solar panel having monolithic multicell photovoltaic modules of different types
    • 太阳能电池板具有不同类型的单片多电池光伏组件
    • US09006558B2
    • 2015-04-14
    • US12703904
    • 2010-02-11
    • Salvatore LombardoSalvatore Coffa
    • Salvatore LombardoSalvatore Coffa
    • H01L31/042H01L31/048H01L31/0392H01L31/043H01L31/046H02S40/32
    • H01L31/048H01L31/03921H01L31/03923H01L31/043H01L31/046H02S40/32H02S40/36Y02E10/541Y02E10/548Y02P70/521
    • A solar panel may include a first multi-cell thin-film photovoltaic module of a first fabrication type including a transparent support forming a front surface of the panel, a first pair of connection terminals on the transparent support, and first cells of a certain area, being on the transparent support, and being connected in series to the first pair of connection terminals. The solar panel may include a second multi-cell thin-film photovoltaic module of a second fabrication type comprising a support forming a rear surface of the panel, a second pair of connection terminals on the support, and second cells of a certain area, being on the support, and being connected in series to the second pair of connection terminals. The solar panel may further include a pair of panel terminals for connecting the solar panel to an external circuit, the first and second pairs of connection terminals being connected either in series or in parallel, and then connected to the external circuit through the panel terminals, or both connected to a maximum power point tracker and then connected to the external circuit through the panel terminals.
    • 太阳能电池板可以包括第一制造类型的第一多单元薄膜光伏模块,其包括形成面板的前表面的透明支撑件,透明支撑件上的第一对连接端子以及某一区域的第一单元 位于透明支架上,并与第一对连接端子串联连接。 太阳能电池板可以包括第二制造类型的第二多单元薄膜光伏模块,包括形成板的后表面的支撑件,支撑件上的第二对连接端子以及特定区域的第二单元, 并且与第二对连接端子串联连接。 太阳能电池板还可以包括用于将太阳能电池板连接到外部电路的一对面板端子,第一和第二对连接端子串联或并联连接,然后通过面板端子连接到外部电路, 或两者连接到最大功率点跟踪器,然后通过面板端子连接到外部电路。
    • 9. 发明申请
    • SOLAR PANEL HAVING TWO MONOLITHICAL MULTICELL PHOTOVOLTAIC MODULES OF DIFFERENT FABRICATION TECHNOLOGY
    • 具有不同制造技术的两个单片MULTICELL光伏模块的太阳能面板
    • US20100200043A1
    • 2010-08-12
    • US12703904
    • 2010-02-11
    • Salvatore LombardoSalvatore Coffa
    • Salvatore LombardoSalvatore Coffa
    • H01L31/042H01L31/18
    • H01L31/048H01L31/03921H01L31/03923H01L31/043H01L31/046H02S40/32H02S40/36Y02E10/541Y02E10/548Y02P70/521
    • A solar panel may include a first multi-cell thin-film photovoltaic module of a first fabrication type including a transparent support forming a front surface of the panel, a first pair of connection terminals on the transparent support, and first cells of a certain area, being on the transparent support, and being connected in series to the first pair of connection terminals. The solar panel may include a second multi-cell thin-film photovoltaic module of a second fabrication type comprising a support forming a rear surface of the panel, a second pair of connection terminals on the support, and second cells of a certain area, being on the support, and being connected in series to the second pair of connection terminals. The solar panel may further include a pair of panel terminals for connecting the solar panel to an external circuit, the first and second pairs of connection terminals being connected either in series or in parallel, and then connected to the external circuit through the panel terminals, or both connected to a maximum power point tracker and then connected to the external circuit through the panel terminals.
    • 太阳能电池板可以包括第一制造类型的第一多单元薄膜光伏模块,其包括形成面板的前表面的透明支撑件,透明支撑件上的第一对连接端子以及某一区域的第一单元 位于透明支架上,并与第一对连接端子串联连接。 太阳能电池板可以包括第二制造类型的第二多单元薄膜光伏模块,包括形成板的后表面的支撑件,支撑件上的第二对连接端子以及特定区域的第二单元, 并且与第二对连接端子串联连接。 太阳能电池板还可以包括用于将太阳能电池板连接到外部电路的一对面板端子,第一和第二对连接端子串联或并联连接,然后通过面板端子连接到外部电路, 或两者连接到最大功率点跟踪器,然后通过面板端子连接到外部电路。