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1. 发明申请

WO2012050075A9 POWER SUPPLY SYSTEM 审中-公开
标题翻译：电源系统
公开(公告)号：WO2012050075A9
公开(公告)日：2012-06-14
申请号：PCT/JP2011073302
申请日：2011-10-11
申请人： SANYO ELECTRIC CO , TANIDA YOSUKE , SUYAMA ATSUSHI
发明人： TANIDA YOSUKE , SUYAMA ATSUSHI
IPC分类号： G06Q50/00 , H01M10/42
CPC分类号： H01M10/44
摘要： [Problem] To provide a power supply system which controls charging and discharging of a capacitor in response to the price of a unit amount of power for variable commercial power. [Solution] A power supply system (1) comprises a capacitor (10) which charges by consuming commercial power, and supplies the charged power by discharging; a price information acquisition unit (11) which acquires price information that is information indicating the price for a unit amount of power of commercial power, and a capacitor control unit (12) which controls the charging and discharging of the capacitor on the basis of the price information acquired by the price information acquisition unit. The price information respectively indicates the price for a unit amount of power of commercial power at respective unit times during a given time. The capacitor control unit (12) is able to set a unit time for discharging the capacitor (10), and a unit time for charging of the capacitor (10).
摘要翻译： [问题]提供一种电源系统，其响应于用于可变商业电力的单位功率的价格来控制电容器的充电和放电。电源系统（1）包括电容器（10），其通过消耗商业电力进行充电，并通过放电来提供充电电力; 获取价格信息的价格信息获取单元（11），该价格信息是表示商用电力单位量的价格的信息;以及电容器控制单元（12），其基于所述价格信息来控制所述电容器的充电和放电由价格信息获取单元获取的价格信息。价格信息分别表示给定时间内各单位时间内商业电力单位功率的价格。电容器控制单元（12）能够设置放电电容器（10）的单位时间，以及电容器（10）的充电单位时间。

2. 发明申请

WO2011133412A1 P-TYPE CONTROL GATE IN NON-VOLATILE STORAGE AND METHODS FOR FORMING SAME 审中-公开
标题翻译：非挥发性储存中的P型控制闸门及其形成方法
公开(公告)号：WO2011133412A1
公开(公告)日：2011-10-27
申请号：PCT/US2011/032635
申请日：2011-04-15
申请人： SANDISK CORPORATION , ORIMOTO, Takashi Whitney , SUYAMA, Atsushi , TIAN, Ming , CHIN, Henry , CHIEN, Henry , PURAYATH, Vinod Robert , LEE, Dana
发明人： ORIMOTO, Takashi Whitney , SUYAMA, Atsushi , TIAN, Ming , CHIN, Henry , CHIEN, Henry , PURAYATH, Vinod Robert , LEE, Dana
IPC分类号： H01L21/8247 , H01L27/115 , H01L21/28 , H01L29/423
CPC分类号： H01L21/28291 , H01L21/28273 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/788
摘要： Non-voltage storage and techniques for fabricating non-volatile storage are disclosed. In some embodiments, at least a portion of the control gates of non-volatile storage elements are formed from p-type polysilicon. In one embodiment, a lower portion of the control gate is p-type polysilicon. The upper portion of the control gate could be p-type polysilicon, n-type polysilicon, metal, metal nitride, etc. P-type polysilicon in the control gate may not deplete even at high Vpgm. Therefore, a number of problems that could occur if the control gate depleted are mitigated. For example, a memory cell having a control gate that is at least partially p-type polysilicon might be programmed with a lower Vpgm than a memory cell formed from n-type polysilicon.
摘要翻译：公开了非电压存储和用于制造非易失性存储器的技术。在一些实施例中，非易失性存储元件的控制栅极的至少一部分由p型多晶硅形成。在一个实施例中，控制栅极的下部是p型多晶硅。控制栅极的上部可以是p型多晶硅，n型多晶硅，金属，金属氮化物等。即使在高Vpgm下，控制栅中的P型多晶硅也可能不会消耗。因此，如果控制门耗尽，可能会发生的一些问题得到缓解。例如，具有至少部分p型多晶硅的控制栅极的存储单元可以用比由n型多晶硅形成的存储单元低的Vpgm来编程。

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