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    • 2. 发明申请
    • Semiconductor Devices Including Active Patterns Having Different Pitches and Methods of Fabricating the Same
    • 包括具有不同间距的主动模式的半导体器件及其制造方法
    • US20160211168A1
    • 2016-07-21
    • US15000425
    • 2016-01-19
    • Sunhom Steve PAAKSung Min KIM
    • Sunhom Steve PAAKSung Min KIM
    • H01L21/762H01L21/02H01L21/027H01L29/66H01L21/308
    • H01L29/6656H01L21/3086H01L21/76232H01L27/1104H01L27/11524H01L27/11536
    • Methods for fabricating semiconductor devices are provided including sequentially stacking hardmask layers, a first sacrificial layer, and a second sacrificial layer on a substrate, forming first mandrels on the first sacrificial layer by etching the second sacrificial layer, forming first spacers on side walls of the first mandrels, forming a photoresist pattern disposed outside a region from which the first mandrels have been removed, forming second and third mandrels by etching the first sacrificial layer using the first spacers and the photoresist pattern as respective etching masks, forming second and third spacers on side walls of the second and third mandrels, forming first and second active patterns respectively having first and second pitches by etching the hardmask layer and at least a portion of the substrate, and forming a device isolation layer so that upper portions of the first and second active patterns protrude therefrom.
    • 提供了制造半导体器件的方法,包括在衬底上顺序堆叠硬掩模层,第一牺牲层和第二牺牲层,通过蚀刻第二牺牲层在第一牺牲层上形成第一心轴,在第二牺牲层的侧壁上形成第一间隔物 第一心轴,形成设置在从其中去除第一心轴的区域之外的光致抗蚀剂图案,通过使用第一间隔物和光致抗蚀剂图案蚀刻第一牺牲层形成第二和第三心轴作为各自的蚀刻掩模,在第 第二和第三心轴的侧壁,通过蚀刻硬掩模层和至少一部分基底形成分别具有第一和第二间距的第一和第二有源图案,并且形成器件隔离层,使得第一和第二心轴的上部 活动图案突出。
    • 5. 发明授权
    • Antenna having linear array antenna unit
    • 天线具有线性阵列天线单元
    • US09142875B2
    • 2015-09-22
    • US13325110
    • 2011-12-14
    • Sung-Min Kim
    • Sung-Min Kim
    • H01Q3/00H01Q1/24H01Q3/24H01Q9/22
    • H01Q1/241H01Q3/24H01Q9/22
    • An antenna may include a linear array antenna unit, a first switch, and a second switch. The linear array antenna unit may be configured to include a plurality of cable elements linearly arranged and coupled to each other. The first switch may include one end coupled to a ground and another end coupled to at least one of the plurality of cable elements of the linear array antenna unit. The second switch may include one end coupled to a power feed point and another end coupled to at least one of the plurality of cable elements. The plurality of cable elements of the linear array antenna unit may form one of a first antenna structure and a second antenna structure according to the switching operations of the first and second switches.
    • 天线可以包括线性阵列天线单元,第一开关和第二开关。 线性阵列天线单元可以被配置为包括线性排列并彼此耦合的多个电缆元件。 第一开关可以包括耦合到地的一端和耦合到线性阵列天线单元的多个电缆元件中的至少一个的另一端。 第二开关可以包括耦合到馈电点的一端和耦合到多个电缆元件中的至少一个的另一端。 根据第一和第二开关的切换操作,线性阵列天线单元的多个电缆元件可以形成第一天线结构和第二天线结构中的一个。
    • 7. 发明授权
    • Electrical energy generator
    • 电能发电机
    • US08975805B2
    • 2015-03-10
    • US13396208
    • 2012-02-14
    • Sung-min KimSeung-nam Cha
    • Sung-min KimSeung-nam Cha
    • H01L41/113
    • H02N2/186Y02E10/549
    • According to an example embodiment, an electrical energy generator includes at least one piezoelectric structure, a semiconductor layer and a contact layer. The at least one piezoelectric structure includes a material having piezoelectric characteristics. One surface of each piezoelectric structure forms a p-n junction with the semiconductor layer. The other end of each piezoelectric structure contacts the contact layer that is formed of a material having metal-insulator transition (MIT) characteristics. The piezoelectric structure may be an elongated member, such as a nanowire.
    • 根据示例性实施例,电能发生器包括至少一个压电结构,半导体层和接触层。 所述至少一个压电结构包括具有压电特性的材料。 每个压电结构的一个表面与半导体层形成p-n结。 每个压电结构的另一端接触由具有金属 - 绝缘体转变(MIT)特性的材料形成的接触层。 压电结构可以是细长构件,例如纳米线。