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    • 1. 发明授权
    • Ferroelectric varactors suitable for capacitive shunt switching
    • 铁电变容二极管适用于电容分流开关
    • US07692270B2
    • 2010-04-06
    • US10575754
    • 2004-10-15
    • Guru SubramanyamAndre VorobievSpartak Gevorgian
    • Guru SubramanyamAndre VorobievSpartak Gevorgian
    • H01P7/10
    • H01L27/0808H01L29/93H01P1/15H01P1/203
    • A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. The concept of switching ON and OFF state is based on the dielectric tunability of the ferroelectric thin-films. At 0 V, the varactor has the highest capacitance value, resulting in the signal to be shunted to ground, thus isolating the output from the input. This results in the OFF state of the switch. By applying a small voltage to the center conductor of the CPW, the varactor's capacitance can be reduced allowing the signal to be transmitted through resulting in the ON state of the device. Such a varactor shunt switch eliminates majority of problems plaguing the RF MEMS shunt switches.
    • 公开了一种适用于电容分流开关的铁电变容二极管。 使用具有SiO 2层的高电阻率硅和沉积在顶部的图案化金属层作为衬底。 沉积在基板上的铁电薄膜层用于实现变容二极管。 顶层金属电极沉积在形成CPW传输线的铁电薄膜层上。 通过使用由顶部金属电极和底部金属层中的大面积接地导体形成的电容,产生铁电变容二极管与由接地导体限定的大电容器的串联连接。 大电容器作为短路对齐,不需要通孔。 导通和断开状态的概念基于铁电薄膜的介电可调性。 在0 V时,变容二极管具有最高的电容值,导致信号被分流到地,从而将输出与输入隔离。 这导致开关的OFF状态。 通过向CPW的中心导体施加小电压,可以减小变容二极管的电容,从而允许通过导致器件的导通状态来传输信号。 这种变容二极管分流开关消除了困扰RF MEMS分流开关的大部分问题。
    • 3. 发明申请
    • Delay locked loop with precision contolled delay
    • 延迟锁定环路,具有精确的等距延迟
    • US20070139089A1
    • 2007-06-21
    • US10581786
    • 2003-12-10
    • Harald JacobssonSpartak GevorgianThomas Lewin
    • Harald JacobssonSpartak GevorgianThomas Lewin
    • H03L7/06
    • H03L7/0812
    • The invention discloses a delay-locked loop circuit with input means for a signal that is to be delayed, the input means comprising means for splitting the input signal into a first and a second branch. The signal in the first branch is connected to a component for delaying the signal, and the signal in the second branch is used as a non-delayed reference for the delay caused by the delay component in the first branch. The delay component is a passive tunable delay line, and the circuit comprises tuning means for the tunable delay line, the tuning means being affected by said reference signal, and the first branch comprises output means for outputting a delayed signal with a chosen phase delay. Suitably, the delay component is continuously tunable, for example a tunable ferroelectric delay line.
    • 本发明公开了一种具有用于待延迟的信号的输入装置的延迟锁定环路,输入装置包括用于将输入信号分成第一和第二分支的装置。 第一分支中的信号连接到用于延迟信号的分量,并且第二分支中的信号用作由第一分支中的延迟分量引起的延迟的非延迟参考。 所述延迟部件是无源可调谐延迟线,并且所述电路包括用于所述可调谐延迟线的调谐装置,所述调谐装置受所述参考信号的影响,并且所述第一分支包括用于输出具有所选相位延迟的延迟信号的输出装置。 适当地,延迟分量是可连续调节的,例如可调铁电延迟线。
    • 4. 发明申请
    • Ferroelectric devices and method relating thereto
    • 铁电元件及其相关方法
    • US20060012448A1
    • 2006-01-19
    • US11229622
    • 2005-09-20
    • Spartak GevorgianErland Wikborg
    • Spartak GevorgianErland Wikborg
    • H01P5/04
    • H01G7/06
    • The present invention relates to an electrically controllable/tunable microwave device comprising a ferroelectric substrate with a variable dielectric permitivity and conducting electrodes, arranged on said substrate, and the capacitance of which depends on applied voltage C/V), the microwave device comprises at least two sections or parts of the substrate/electrodes for each of which different electrical field strengths are generated upon voltage application. Said generated electrical field strengths are controlled by means of the design of the device and/or the voltage application such that the slope (dC(dV) of the voltage dependence of the capacitance (C(V) of the microwave device can be controlled.
    • 本发明涉及一种电控制/可调谐微波器件,其包括具有可变介电常数的铁电衬底和布置在所述衬底上的导电电极,其电容取决于所施加的电压C(V),所述微波器件至少包括 基板/电极的两个部分或部分,其中每一个在施加电压时产生不同的电场强度。 通过设备的设计和/或电压施加来控制所产生的电场强度,使得可以控制微波器件的电容C(V)的电压依赖性的斜率(dC / dV)。
    • 7. 发明申请
    • A FERROELECTRIC LENS
    • 电磁镜头
    • WO2006062446A1
    • 2006-06-15
    • PCT/SE2004/001822
    • 2004-12-08
    • TELEFONAKTIEBOLAGET LM ERICSSON (PUBL)TAGEMAN, OlaSPARTAK, GevorgianDELENIV, AnatoliFIHOL, PierreCHERMAN, Vladimir
    • TAGEMAN, OlaSPARTAK, GevorgianDELENIV, AnatoliFIHOL, PierreCHERMAN, Vladimir
    • H01Q3/44
    • H01Q15/04H01Q3/44
    • A lens (300, 500) is disclosed for steering the exit direction (Ω) of an incident electromagnetic wave. The lens comprises a main body (210, 510) of a ferroelectric material with a first main surface (207, 507) and a first transformer (220, 222). The electromagnetic wave enters and exits the lens through the transformer, and the lens comprises means (370, 380) for creating a DC-field in a first direction in the main body. The main body (210, 510) of ferroelectric material comprises a plurality (21011-210NN, 51011-510NN) of slabs of the ferroelectric material, each slab also comprising a first (403, 603) and a second electrode of a conducting material. The means for creating a DC-field can create a gradient DC-field in the first direction using the first and second electrodes, so that the dielectric constant in the main body will also be a gradient in the first direction, thus enabling steering of the existing electromagnetic wave.
    • 公开了用于转向入射电磁波的出射方向(O)的透镜(300,500)。 透镜包括具有第一主表面(207,507)和第一变压器(220,222)的铁电材料的主体(210,510)。 电磁波通过变压器进入和离开透镜,透镜包括用于在主体中沿第一方向产生DC场的装置(370,380)。 铁电材料的主体(210,510)包括铁电材料的多个(21011-210NN,51011-510NN)板,每个板还包括导电材料的第一(403,603)和第二电极。 用于产生DC场的装置可以使用第一和第二电极在第一方向上产生梯度DC场,使得主体中的介电常数也将是第一方向上的梯度,从而能够使 现有的电磁波。
    • 8. 发明授权
    • Tuneable ferroelectric delay line having mirror image conductors
    • 具有镜像导体的调谐铁电延迟线
    • US07642883B2
    • 2010-01-05
    • US10586139
    • 2004-03-09
    • Dan KuylenstiernaHarald JacobssonThomas LewinSpartak Gevorgian
    • Dan KuylenstiernaHarald JacobssonThomas LewinSpartak Gevorgian
    • H01P1/18
    • H01P9/04H01P9/006
    • A tunable electromagnetic delay line, comprising a first conductor with a first main direction of extension. The first conductor is arranged on top of a non-conducting substrate. The delay line additionally comprises a layer of a ferroelectric material with first and second main surfaces. The layer separates the first conductor and the substrate. The delay line also comprises a second conductor with a second main direction of extension, with the first and second main directions of extensions essentially coinciding with each other, and with the first and second conductors being each other's mirror image with respect to an imagined line in the center of the delay line along the first and second main directions of extension. The tuning is accomplished by applying a voltage between said first and second conductors.
    • 一种可调电磁延迟线,包括具有第一主延伸方向的第一导体。 第一导体布置在非导电衬底的顶部。 延迟线还包括具有第一和第二主表面的铁电材料层。 该层分离第一导体和基底。 延迟线还包括具有第二主延伸方向的第二导体,其中延伸部的第一和第二主方向基本上彼此重合,并且第一和第二导体相对于想象线彼此相对于镜像 沿着第一和第二主要延伸方向的延迟线的中心。 通过在所述第一和第二导体之间施加电压来实现调谐。
    • 9. 发明申请
    • Varactor Device with Reduced Temperature Dependence
    • 具有降低温度依赖性的变容二极管装置
    • US20090027132A1
    • 2009-01-29
    • US11577063
    • 2004-10-11
    • Spartak GevorgianJacobsson HaraldThomas Lewin
    • Spartak GevorgianJacobsson HaraldThomas Lewin
    • H03B5/04
    • H03H5/12H03B5/04H03J3/04H03J3/185
    • The invention discloses a varactor device (100) for improved temperature stability, comprising a first varactor (160) connected to a decoupling network (150). The device further comprises a voltage stabilizer (110), said stabilizer comprising a capacitor (140) and a temperature dependent capacitor (130), and in that the stabilizer comprises means for connection to a DC-feed (120). Suitably, the decoupling network (150) is connected in parallel to the first varactor (160), and the capacitor (140) of the voltage stabilizer (110) is connected in parallel to the decoupling network (150), the temperature dependent capacitor (130) of the voltage stabilizer (110) being connected in series to the diode of the voltage stabilizer (110).
    • 本发明公开了一种用于改善温度稳定性的变容二极管装置(100),包括连接到去耦网络(150)的第一变容二极管(160)。 该装置还包括电压稳定器(110),所述稳定器包括电容器(140)和与温度相关的电容器(130),并且所述稳定器包括用于连接到直流馈电(120)的装置。 适当地,解耦网络150并联连接到第一变容二极管160,并且电压稳定器110的电容器140并联连接到去耦网络150,温度依赖电容器 电压稳定器(110)的串联连接到稳压器(110)的二极管。
    • 10. 发明申请
    • Ferroelectric varactors suitable for capacitive shunt switching
    • 铁电变容二极管适用于电容分流开关
    • US20070176217A1
    • 2007-08-02
    • US10575754
    • 2004-10-15
    • Guru SubramanyamAndrei VorobievSpartak Gevorgian
    • Guru SubramanyamAndrei VorobievSpartak Gevorgian
    • H01L29/94H01L21/00
    • H01L27/0808H01L29/93H01P1/15H01P1/203
    • A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. The concept of switching ON and OFF state is based on the dielectric tunability of the ferroelectric thin-films. At 0 V, the varactor has the highest capacitance value, resulting in the signal to be shunted to ground, thus isolating the output from the input. This results in the OFF state of the switch. By applying a small voltage to the center conductor of the CPW, the varactor's capacitance can be reduced allowing the signal to be transmitted through resulting in the ON state of the device. Such a varactor shunt switch eliminates majority of problems plaguing the RF MEMS shunt switches.
    • 公开了一种适用于电容分流开关的铁电变容二极管。 使用具有SiO 2层的高电阻率硅和沉积在顶部的图案化金属层作为基板。 沉积在基板上的铁电薄膜层用于实现变容二极管。 顶层金属电极沉积在形成CPW传输线的铁电薄膜层上。 通过使用由顶部金属电极和底部金属层中的大面积接地导体形成的电容,产生铁电变容二极管与由接地导体限定的大电容器的串联连接。 大电容器作为短路对齐,不需要通孔。 导通和断开状态的概念基于铁电薄膜的介电可调性。 在0 V时,变容二极管具有最高的电容值,导致信号被分流到地,从而将输出与输入隔离。 这导致开关的OFF状态。 通过向CPW的中心导体施加小电压,可以减小变容二极管的电容,从而允许通过导致器件的导通状态来传输信号。 这种变容二极管分流开关消除了困扰RF MEMS分流开关的大部分问题。