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1. 发明申请

US20070176217A1 Ferroelectric varactors suitable for capacitive shunt switching 有权
标题翻译：铁电变容二极管适用于电容分流开关
公开(公告)号：US20070176217A1
公开(公告)日：2007-08-02
申请号：US10575754
申请日：2004-10-15
申请人： Guru Subramanyam , Andrei Vorobiev , Spartak Gevorgian
发明人： Guru Subramanyam , Andrei Vorobiev , Spartak Gevorgian
IPC分类号： H01L29/94 , H01L21/00
CPC分类号： H01L27/0808 , H01L29/93 , H01P1/15 , H01P1/203
摘要： A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. The concept of switching ON and OFF state is based on the dielectric tunability of the ferroelectric thin-films. At 0 V, the varactor has the highest capacitance value, resulting in the signal to be shunted to ground, thus isolating the output from the input. This results in the OFF state of the switch. By applying a small voltage to the center conductor of the CPW, the varactor's capacitance can be reduced allowing the signal to be transmitted through resulting in the ON state of the device. Such a varactor shunt switch eliminates majority of problems plaguing the RF MEMS shunt switches.
摘要翻译：公开了一种适用于电容分流开关的铁电变容二极管。使用具有SiO 2层的高电阻率硅和沉积在顶部的图案化金属层作为基板。沉积在基板上的铁电薄膜层用于实现变容二极管。顶层金属电极沉积在形成CPW传输线的铁电薄膜层上。通过使用由顶部金属电极和底部金属层中的大面积接地导体形成的电容，产生铁电变容二极管与由接地导体限定的大电容器的串联连接。大电容器作为短路对齐，不需要通孔。导通和断开状态的概念基于铁电薄膜的介电可调性。在0 V时，变容二极管具有最高的电容值，导致信号被分流到地，从而将输出与输入隔离。这导致开关的OFF状态。通过向CPW的中心导体施加小电压，可以减小变容二极管的电容，从而允许通过导致器件的导通状态来传输信号。这种变容二极管分流开关消除了困扰RF MEMS分流开关的大部分问题。

2. 发明授权

US07692270B2 Ferroelectric varactors suitable for capacitive shunt switching 有权
标题翻译：铁电变容二极管适用于电容分流开关
公开(公告)号：US07692270B2
公开(公告)日：2010-04-06
申请号：US10575754
申请日：2004-10-15
申请人： Guru Subramanyam , Andre Vorobiev , Spartak Gevorgian
发明人： Guru Subramanyam , Andre Vorobiev , Spartak Gevorgian
IPC分类号： H01P7/10
CPC分类号： H01L27/0808 , H01L29/93 , H01P1/15 , H01P1/203
摘要： A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. The concept of switching ON and OFF state is based on the dielectric tunability of the ferroelectric thin-films. At 0 V, the varactor has the highest capacitance value, resulting in the signal to be shunted to ground, thus isolating the output from the input. This results in the OFF state of the switch. By applying a small voltage to the center conductor of the CPW, the varactor's capacitance can be reduced allowing the signal to be transmitted through resulting in the ON state of the device. Such a varactor shunt switch eliminates majority of problems plaguing the RF MEMS shunt switches.
摘要翻译：公开了一种适用于电容分流开关的铁电变容二极管。使用具有SiO 2层的高电阻率硅和沉积在顶部的图案化金属层作为衬底。沉积在基板上的铁电薄膜层用于实现变容二极管。顶层金属电极沉积在形成CPW传输线的铁电薄膜层上。通过使用由顶部金属电极和底部金属层中的大面积接地导体形成的电容，产生铁电变容二极管与由接地导体限定的大电容器的串联连接。大电容器作为短路对齐，不需要通孔。导通和断开状态的概念基于铁电薄膜的介电可调性。在0 V时，变容二极管具有最高的电容值，导致信号被分流到地，从而将输出与输入隔离。这导致开关的OFF状态。通过向CPW的中心导体施加小电压，可以减小变容二极管的电容，从而允许通过导致器件的导通状态来传输信号。这种变容二极管分流开关消除了困扰RF MEMS分流开关的大部分问题。

3. 发明申请

US20070024400A1 Ferroelectric varactors suitable for capacitive shunt switching 有权
标题翻译：铁电变容二极管适用于电容分流开关
公开(公告)号：US20070024400A1
公开(公告)日：2007-02-01
申请号：US11543655
申请日：2006-10-05
申请人： Guru Subramanyam , Andre Vorobiev , Spartak Gevorgian
发明人： Guru Subramanyam , Andre Vorobiev , Spartak Gevorgian
IPC分类号： H01P1/203
CPC分类号： H01L27/0808 , H01L29/93 , H01P1/15 , H01P1/2039
摘要： A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. The varactor shunt switches can be used to create a bandpass filter and a tunable notch filter. The bandpass filter is implemented by cascading the switches, and the bandpass filter implemented through the use of a resonance circuit.
摘要翻译：公开了一种适用于电容分流开关的铁电变容二极管。使用具有SiO 2层的高电阻率硅和沉积在顶部的图案化金属层作为基板。沉积在基板上的铁电薄膜层用于实现变容二极管。顶层金属电极沉积在形成CPW传输线的铁电薄膜层上。通过使用由顶部金属电极和底部金属层中的大面积接地导体形成的电容，产生铁电变容二极管与由接地导体限定的大电容器的串联连接。大电容器作为短路对齐，不需要通孔。变容二极管分流开关可用于创建带通滤波器和可调陷波滤波器。带通滤波器通过级联开关和通过使用谐振电路实现的带通滤波器来实现。

4. 发明申请

US20070069264A1 Ferroelectric varactors suitable for capacitive shunt switching and wireless sensing 审中-公开
标题翻译：铁电变容二极管适用于电容分流开关和无线传感
公开(公告)号：US20070069264A1
公开(公告)日：2007-03-29
申请号：US11543654
申请日：2006-10-05
申请人： Guru Subramanyam , Andre Vorobiev , Spartak Gevorgian
发明人： Guru Subramanyam , Andre Vorobiev , Spartak Gevorgian
IPC分类号： H01L29/94
CPC分类号： H01L29/516 , H01L29/93 , H01L29/94 , H01P1/10 , H01P3/003
摘要： A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. In one embodiment, the varactor shunt switch can be used as passive sensor with the capability of being wireless.
摘要翻译：公开了一种适用于电容分流开关的铁电变容二极管。使用具有SiO 2层的高电阻率硅和沉积在顶部的图案化金属层作为基板。沉积在基板上的铁电薄膜层用于实现变容二极管。顶层金属电极沉积在形成CPW传输线的铁电薄膜层上。通过使用由顶部金属电极和底部金属层中的大面积接地导体形成的电容，产生铁电变容二极管与由接地导体限定的大电容器的串联连接。大电容器作为短路对齐，不需要通孔。在一个实施例中，变容二极管分流开关可以被用作具有无线能力的无源传感器。

5. 发明授权

US07719392B2 Ferroelectric varactors suitable for capacitive shunt switching 有权
标题翻译：铁电变容二极管适用于电容分流开关
公开(公告)号：US07719392B2
公开(公告)日：2010-05-18
申请号：US11543655
申请日：2006-10-05
申请人： Guru Subramanyam , Andre Vorobiev , Spartak Gevorgian
发明人： Guru Subramanyam , Andre Vorobiev , Spartak Gevorgian
IPC分类号： H01P1/10 , H01P1/20 , H01P3/08
CPC分类号： H01L27/0808 , H01L29/93 , H01P1/15 , H01P1/2039
摘要： A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. The varactor shunt switches can be used to create a bandpass filter and a tunable notch filter. The bandpass filter is implemented by cascading the switches, and the bandpass filter implemented through the use of a resonance circuit.
摘要翻译：公开了一种适用于电容分流开关的铁电变容二极管。使用具有SiO 2层的高电阻率硅和沉积在顶部的图案化金属层作为衬底。沉积在基板上的铁电薄膜层用于实现变容二极管。顶层金属电极沉积在形成CPW传输线的铁电薄膜层上。通过使用由顶部金属电极和底部金属层中的大面积接地导体形成的电容，产生铁电变容二极管与由接地导体限定的大电容器的串联连接。大电容器作为短路对齐，不需要通孔。变容二极管分流开关可用于创建带通滤波器和可调陷波滤波器。带通滤波器通过级联开关和通过使用谐振电路实现的带通滤波器来实现。

6. 发明授权

US07030463B1 Tuneable electromagnetic bandgap structures based on high resistivity silicon substrates 有权
标题翻译：基于高电阻率硅衬底的可调电磁带隙结构
公开(公告)号：US07030463B1
公开(公告)日：2006-04-18
申请号：US10857175
申请日：2004-05-28
申请人： Guru Subramanyam , Spartak Gevorgian
发明人： Guru Subramanyam , Spartak Gevorgian
IPC分类号： H01L29/93 , H01G5/00
CPC分类号： H01P1/2005 , H01P1/181 , H01P3/003
摘要： Electrically tunable electromagnetic bandgap (“TEBG”) structures using a ferroelectric thin film on a semiconductor substrate, tunable devices that include such a TEBG structure, such as a monolithic microwave integrated circuit (“MMIC”), and a method producing such a TEBG structure are disclosed. The present invention provides a semiconductive substrate having an oxide layer, a first conductive layer positioned on the oxide layer, a ferroelectric layer covering the first conductive layer, and a second conductive layer positioned on a surface of the tunable ferroelectric layer. The use of the ferroelectric layer, which have a DC electric field dependent permittivity, enables a small size, tunable EBG structure.
摘要翻译：在半导体衬底上使用铁电薄膜的电可调谐电磁带隙（“TEBG”）结构，包括诸如单片微波集成电路（“MMIC”）的这种TEBG结构的可调谐器件，以及产生这种TEBG结构的方法被披露。本发明提供一种具有氧化物层，位于氧化物层上的第一导电层，覆盖第一导电层的铁电层和位于可调铁电体层的表面上的第二导电层的半导体衬底。使用具有DC电场依赖介电常数的铁电层能够实现小尺寸，可调谐的EBG结构。

7. 发明授权

US09000866B2 Varactor shunt switches with parallel capacitor architecture 有权
标题翻译：具有并联电容架构的变压器并联开关
公开(公告)号：US09000866B2
公开(公告)日：2015-04-07
申请号：US13533310
申请日：2012-06-26
申请人： Guru Subramanyam
发明人： Guru Subramanyam
IPC分类号： H01L29/93 , H01L27/08 , H01P1/15 , H01P9/00 , H01P3/00
CPC分类号： H01P1/15 , H01L27/0808 , H01P3/003
摘要： A parallel capacitor varactor shunt switch device may include a shunt layer, a coplanar waveguide (CPW) layer, and a tunable thin film dielectric layer that is interposed between the shunt layer and the CPW layer. The tunable thin film dielectric layer electrically isolates the shunt layer from the CPW layer. The shunt layer includes a plurality of parallel shunt lines. The CPW layer includes a CPW signal transmission line with two CPW ground lines parallel to the CPW signal transmission line. A plurality of varactor areas equal in number to the plurality of parallel shunt lines are defined in the CPW signal transmission line, each varactor area corresponding to an overlap of the CPW signal transmission line with a respective shunt line and each respective parallel shunt line and its corresponding varactor area defines a capacitor.
摘要翻译：并联电容器变容二极管分流开关装置可以包括分流层，共面波导（CPW）层和介于分流层和CPW层之间的可调谐薄膜电介质层。可调薄膜电介质层将分流层与CPW层电隔离。并联层包括多个并联分流线。 CPW层包括具有与CPW信号传输线并联的两个CPW接地线的CPW信号传输线。在CPW信号传输线中定义多个与多个并联分流线相等数量的变容二极管区域，每个变容二极管区域对应于CPW信号传输线与相应的分流线和每个相应的并联分流线的重叠，相应的变容二极管区域定义了一个电容器。

8. 发明授权

US08957817B2 Miniaturized and reconfigurable CPW square-ring slot antenna including ferroelectric BST varactors 有权
标题翻译：小型化和可重新配置的CPW方形环槽缝天线，包括铁电BST可变电抗器
公开(公告)号：US08957817B2
公开(公告)日：2015-02-17
申请号：US13489694
申请日：2012-06-06
申请人： Hai Jiang , Guru Subramanyam
发明人： Hai Jiang , Guru Subramanyam
IPC分类号： H01Q13/10 , H01Q9/04 , H01P11/00
CPC分类号： H01Q13/103 , H01P11/00 , H01Q9/0442 , H01Q9/0464 , H01Q13/106 , Y10T29/49016
摘要： A coplanar waveguide (CPW) square-ring slot antenna for use in wireless communication systems is miniaturized and reconfigurable by the integration of ferroelectric (FE) BST (barium strontium titanate) thin film varactors therein. The slot antenna device includes a sapphire substrate, top and bottom metal layers, and a thin ferroelectric BST film layer, where the FE BST varactors are integrated at the back edge of the antenna on the top metal layer.
摘要翻译：用于无线通信系统的共面波导（CPW）方形槽天线通过其中的铁电（FE）BST（钛酸钡锶）薄膜变容二极管的集成而小型化和可重构。缝隙天线装置包括蓝宝石衬底，顶部和底部金属层以及薄的铁电BST膜层，其中FE BST变容二极管集成在顶部金属层上的天线的后边缘处。

9. 发明授权

US07922975B2 Resonant sensor capable of wireless interrogation 有权
标题翻译：能够进行无线询问的谐振传感器
公开(公告)号：US07922975B2
公开(公告)日：2011-04-12
申请号：US12172330
申请日：2008-07-14
申请人： Guru Subramanyam
发明人： Guru Subramanyam
IPC分类号： G01N27/00
CPC分类号： G01N27/221
摘要： A resonant sensor for detecting a specific environmental analyte is presented. The resonant sensor comprises a top conductive layer of two ground conductors and a center signal line, a bottom conductive layer of two ground lines shunted together by a shunt line and a sensing layer positioned between the top conductive layer and the bottom conductive layer. A capacitor is created by the overlap of the center signal line of the top conductive layer and the shunt line of the bottom conductive layer. Electrical properties of the sensing layer change in response to binding the specific environmental analyte with the sensing layer. The sensing layer can be an electro-optic polymer. Nanoparticles or carbon nanotubes can be dispersed within the sensing layer to bind with the specific environmental analyte. An integrated antenna can be incorporated into to sensor to receive radio frequencies for wireless, passive sensing.
摘要翻译：提出了一种用于检测特定环境分析物的谐振传感器。谐振传感器包括两个接地导体的顶部导电层和中心信号线，由分流线分流在一起的两个接地线的底部导电层和位于顶部导电层和底部导电层之间的感测层。通过顶部导电层的中心信号线和底部导电层的分流线的重叠产生电容器。响应于将特定环境分析物与感测层结合而感测层的电学性质发生变化。感测层可以是电光聚合物。纳米颗粒或碳纳米管可以分散在感测层内以与特定环境分析物结合。集成天线可以并入到传感器中以接收用于无线，被动感测的无线电频率。

10. 发明授权

US10693178B2 Wearable lithium-sulfur battery and methods of making the same 有权
公开(公告)号：US10693178B2
公开(公告)日：2020-06-23
申请号：US15956043
申请日：2018-04-18
申请人： Jitendra Kumar , Priyanka Bhattacharya , Guru Subramanyam
发明人： Jitendra Kumar , Priyanka Bhattacharya , Guru Subramanyam
IPC分类号： H01M10/052 , H01M4/13 , H01M4/62 , H01M10/0565 , H01M10/04 , H01M4/38 , H01M10/0562 , H01M4/66 , H01M4/134 , H01M4/02
摘要： Lithium sulfur batteries are described, especially ones that are flexible for wearing about an appendage of a wearer. Such batteries have a lithium metal anode, a sulfur cathode comprising sulfur, a conductive carbon, a lithium supertonic solid-state conductor, and a dendritic or hyperbranched polymer binder, an electrolyte layer between the lithium metal anode and the sulfur cathode, and a current collector positioned on the sulfur cathode opposite the electrolyte layer.

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