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1. 发明申请

WO2013006027A1 METHOD FOR USE IN FABRICATING NANOMATERIALS BASED DEVICES 审中-公开
标题翻译：用于制备基于纳米材料的器件的方法
公开(公告)号：WO2013006027A1
公开(公告)日：2013-01-10
申请号：PCT/MY2012/000133
申请日：2012-06-22
申请人： MIMOS BERHAD , SHIH, Teh, Aun , SHENG, Daniel, Bien, Chia
发明人： SHIH, Teh, Aun , SHENG, Daniel, Bien, Chia
IPC分类号： B82Y10/00 , B82Y15/00 , B82Y40/00 , C01B31/02 , G01N27/414 , H01L29/775 , H01L29/786 , H01L51/05
CPC分类号： H01L51/0558 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , H01L27/283 , H01L29/0673 , H01L29/413 , H01L29/78696 , H01L51/0048 , H01L51/0049 , H01L51/0508 , H01L51/0579 , H01L51/105
摘要： The present invention discloses a method for fabricating a nanomaterial based device, whereby the gist of the method includes the use of catalyst islands so as to allow controlled formation of the nanomaterials compared to conventional methods, and whereby there is provided forming at least one source-drain configuration between networks of nanomaterials to serve as conduction channels. Further in accordance with a preferred embodiment of the present invention, the fabrication of a nanostructured device is not dependent on an NT/NW growth orientation.
摘要翻译：本发明公开了一种用于制造基于纳米材料的器件的方法，由此该方法的要点包括使用催化剂岛，以便与常规方法相比能够控制纳米材料的形成，并且由此提供形成至少一个源极 - 纳米材料网络之间的漏极配置作为传导通道。此外，根据本发明的优选实施例，纳米结构设备的制造不依赖于NT / NW生长方向。

2. 发明申请

WO2012115502A1 A PHOTOVOLTAIC DEVICE WITH AN INTEGRATED SENSOR 审中-公开
标题翻译：具有集成传感器的光伏器件
公开(公告)号：WO2012115502A1
公开(公告)日：2012-08-30
申请号：PCT/MY2012/000026
申请日：2012-02-21
申请人： MIMOS BERHAD , SHENG, Daniel, Bien, Chia , WAH, Lee, Hing
发明人： SHENG, Daniel, Bien, Chia , WAH, Lee, Hing
IPC分类号： H01L31/06 , H01L31/0224
CPC分类号： H01L31/022433 , G01K13/00 , H01L27/142 , Y02E10/50
摘要： The present invention relates to a photovoltaic device (1, 2, 3) for generating electricity and sensing environmental parameters. The photovoltaic device (1, 2, 3) comprises a semiconductor junction (12), a front contact (13), a back contact (14), at least one metal collector finger (15, 25, 35), at least two busbars (16, 26, 36), and at least one sensor (11, 21, 31). The at least one sensor (11, 21, 31) is a portion of the at least one metal collector finger (15, 25, 35) shaped in a serpentine manner to sense environmental parameters such as temperature, humidity, gas content and the like.
摘要翻译：本发明涉及一种用于发电和感测环境参数的光伏器件（1,2,3）。光电器件（1,2,3）包括半导体结（12），前触点（13），后触点（14），至少一个金属收集器指（15,25,35），至少两个汇流条（16,26,36）和至少一个传感器（11,21,31）。所述至少一个传感器（11,21,31）是所述至少一个金属收集器指状物（15,25,35）的一部分，其以蛇形方式成形，以感测温度，湿度，气体含量等环境参数。

3. 发明申请

WO2012070924A1 A METHOD FOR NANOWIRES AND NANOTUBES GROWTH 审中-公开
标题翻译：一种纳米和纳米生长方法
公开(公告)号：WO2012070924A1
公开(公告)日：2012-05-31
申请号：PCT/MY2011/000073
申请日：2011-06-06
申请人： MIMOS BERHAD , SHENG, Daniel Bien Chia , SHIH, Teh Aun
发明人： SHENG, Daniel Bien Chia , SHIH, Teh Aun
IPC分类号： B82B3/00 , B82Y40/00
CPC分类号： B82Y40/00 , B01J23/06 , B01J23/08 , B01J23/30 , B01J23/52 , B01J23/72 , B01J23/745 , B01J23/75 , B01J23/755 , B01J37/349 , B82Y30/00 , C01B32/162 , C01B33/021 , C30B29/02 , C30B29/06 , C30B29/60 , C30B29/602 , H01L21/02488 , H01L21/02603 , H01L21/02606 , H01L21/02639 , H01L21/02645 , H01L21/02653
摘要： The present invention provides a method for nanowires and nanotubes (10, 20) growth. The nanowires and nanotubes (10, 20) have a plurality of first nanowires (10) and a plurality of second nanowires (20) grown on a single substrate (30). The first and second nanowires (10, 20) are grown using two different types of catalyst materials (11, 21), wherein the first nanowires (10) are grown using a first catalyst (11) whereas the second nanowires (20) are grown using a second catalyst (21).
摘要翻译：本发明提供了纳米线和纳米管（10,20）生长的方法。纳米线和纳米管（10,20）具有在单个衬底（30）上生长的多个第一纳米线（10）和多个第二纳米线（20）。使用两种不同类型的催化剂材料（11,21）生长第一和第二纳米线（10,20），其中第一纳米线（10）使用第一催化剂（11）生长，而第二纳米线（20）生长使用第二催化剂（21）。

4. 发明申请

WO2012064177A1 NANOPOROUS MEMBRANE AND METHOD OF FORMING THEREOF 审中-公开
标题翻译：纳米膜及其形成方法
公开(公告)号：WO2012064177A1
公开(公告)日：2012-05-18
申请号：PCT/MY2011/000130
申请日：2011-05-23
申请人： MIMOS BERHAD , SHENG, Daniel Bien Chia , SHIH, Teh Aun
发明人： SHENG, Daniel Bien Chia , SHIH, Teh Aun
IPC分类号： B01D67/00 , B82Y40/00 , B01D69/12 , G01N27/40
CPC分类号： B01D71/56 , B01D67/0058 , B01D67/0062 , B01D71/021 , B01D2325/028 , B82Y40/00
摘要： The present invention discloses a method for use in forming a nanoporous membrane using silicon nanowires. The primary steps of the present invention includes providing a substrate; forming a catalyst layer on said substrate; growing silicon nanowires on said substrate; depositing membrane layer materials as a base for formation of nanopores; and etching the silicon nanowires selectively.
摘要翻译：本发明公开了一种使用硅纳米线形成纳米多孔膜的方法。本发明的主要步骤包括提供基底; 在所述衬底上形成催化剂层; 在所述衬底上生长硅纳米线; 沉积膜层材料作为形成纳米孔的基体; 并选择性地蚀刻硅纳米线。

5. 发明申请

WO2011078651A2 METHOD FOR FABRICATING NANOWIRES 审中-公开
标题翻译：制备纳米微粒的方法
公开(公告)号：WO2011078651A2
公开(公告)日：2011-06-30
申请号：PCT/MY2010/000318
申请日：2010-12-13
申请人： MIMOS BERHAD , BIEN, Chia Sheng Daniel , RAHIMAH, Mohd Saman , SITI AISHAH, Mohamad Badaruddin
发明人： BIEN, Chia Sheng Daniel , RAHIMAH, Mohd Saman , SITI AISHAH, Mohamad Badaruddin
IPC分类号： B82B3/00 , B82B1/00
CPC分类号： B82Y30/00 , B82Y15/00 , C23C16/4418 , C23C16/56
摘要： The present invention provides the method for fabricating tungsten (24) and tungsten oxide (30) nanowires by selective CVD method process on a handle substrate (20) and insulating layer (22) with silicon nanostructure (28) in the presence tungsten hexafluoride precursor without the need to use of metal catalyst or mixed powder. This method uses an underlying silicon nano-structure material where the nanowires are laterally formed, in-planed with the substrate and also has uniform dimension. Tungsten nanowires fabricated can thereon be converted to tungsten oxides by oxidation or annealing process.
摘要翻译：本发明提供了在存在六氟化钨前体的情况下通过选择性CVD法在具有硅纳米结构（28）的手柄衬底（20）和绝缘层（22）上制造钨（24）和氧化钨（30）纳米线的方法，而没有需要使用金属催化剂或混合粉末。该方法使用下面的硅纳米结构材料，其中纳米线横向形成，与基底成平面且具有均匀的尺寸。其上制造的钨纳米线可通过氧化或退火工艺转化为钨氧化物。

6. 发明申请

WO2011078650A3 METHOD FOR FABRICATING NANOFLUIDIC CHANNELS 审中-公开
公开(公告)号：WO2011078650A3
公开(公告)日：2011-06-30
申请号：PCT/MY2010/000316
申请日：2010-12-13
申请人： MIMOS BERHAD , BIEN, Chia Sheng Daniel
发明人： BIEN, Chia Sheng Daniel
IPC分类号： G01N35/08 , G01N33/48 , B82B3/00
摘要： The present invention provides the method for fabricating nanofluidic channels (23) with a combination of the formation of silicon (22B) or oxide nanowires (22) on a handle substrate (20), layered with or without an insulating material together with wafer planarization techniques. The process provides a simple and practical solution for low cost fabrication of nanofluidic channel with well controlled dimensions where the resolution of the channels is dependent on the resolution of the nanowires instead of on the lithographic tool or type of resist used. This method is compatible with standard CMOS process allowing easy integration on the same platform with other nanofluidic devices and systems fabricated using similar methods.

7. 发明申请

WO2011078650A2 METHOD FOR FABRICATING NANOFLUIDIC CHANNELS 审中-公开
标题翻译：制备纳米通道的方法
公开(公告)号：WO2011078650A2
公开(公告)日：2011-06-30
申请号：PCT/MY2010000316
申请日：2010-12-13
申请人： MIMOS BERHAD , BIEN CHIA SHENG DANIEL
发明人： BIEN CHIA SHENG DANIEL
IPC分类号： G01N35/08 , B82B3/00 , G01N33/48
CPC分类号： B81C1/00071 , B01L3/502707 , B01L3/502761 , B01L2200/025 , B01L2200/0663 , B01L2300/0896 , B81B2201/058
摘要： The present invention provides the method for fabricating nanofluidic channels (23) with a combination of the formation of silicon (22B) or oxide nanowires (22) on a handle substrate (20), layered with or without an insulating material together with wafer planarization techniques. The process provides a simple and practical solution for low cost fabrication of nanofluidic channel with well controlled dimensions where the resolution of the channels is dependent on the resolution of the nanowires instead of on the lithographic tool or type of resist used. This method is compatible with standard CMOS process allowing easy integration on the same platform with other nanofluidic devices and systems fabricated using similar methods.
摘要翻译：本发明提供了一种制造纳米流体通道（23）的方法，其结合在手柄衬底（20）上形成硅（22B）或氧化物纳米线（22），层叠有绝缘材料或不带绝缘材料以及晶片平面化技术。该方法为具有良好控制尺寸的纳米流体通道的低成本制造提供了一种简单实用的解决方案，其中通道的分辨率取决于纳米线的分辨率而不是光刻工具或所使用的抗蚀剂类型。该方法与标准CMOS工艺兼容，允许在与使用类似方法制造的其他纳米流体装置和系统在同一平台上轻松集成。

8. 发明申请

WO2006105222A2 CARBOXAMIDE INHIBITORS OF TGFB 审中-公开
标题翻译： TGFB的羧酰胺抑制剂
公开(公告)号：WO2006105222A2
公开(公告)日：2006-10-05
申请号：PCT/US2006011509
申请日：2006-03-27
申请人： SCIOS INC , AXON JONATHAN , CHAKRAVARTY SARVAJIT , HART BARRY , MCENROE GLENN , MURPHY ALISON , PONTIUS KAREN , SHENG DANIEL , WANG GINA , YELLAPREGADA SHANTI
发明人： AXON JONATHAN , CHAKRAVARTY SARVAJIT , HART BARRY , MCENROE GLENN , MURPHY ALISON , PONTIUS KAREN , SHENG DANIEL , WANG GINA , YELLAPREGADA SHANTI
IPC分类号： C07D401/12 , A61K31/506 , C07D401/14 , C07D407/14
CPC分类号： C07D401/12 , C07D401/14 , C07D405/14 , C07D413/14 , C07D495/04
摘要： Certain appropriately substituted forms of pyrimidine having a pyridylamine group at C- 4 of the pyrimidine and an amide group on the pyridine ring are useful in the treatment of conditions associated with excessive TGFB activity.
摘要翻译：在嘧啶的C 4上具有吡啶基胺基的嘧啶的某些适当取代的形式和吡啶环上的酰胺基可用于治疗与过量TGFB活性相关的病症。

9. 发明申请

WO2013100753A1 DOUBLE-SIDED SUPER CAPACITOR AND METHOD FOR MAKING THE SAME 审中-公开
标题翻译：双面超级电容器及其制造方法
公开(公告)号：WO2013100753A1
公开(公告)日：2013-07-04
申请号：PCT/MY2012/000163
申请日：2012-06-28
申请人： MIMOS BERHAD , WITJAKSONO, Gunawan , BIEN CHIA SHENG, Daniel , NABIPOOR, Mohsen
发明人： WITJAKSONO, Gunawan , BIEN CHIA SHENG, Daniel , NABIPOOR, Mohsen
IPC分类号： H01G9/04 , H01G9/042 , H01G9/048 , H01G9/058 , H01G11/24 , H01G11/26 , H01G11/36
CPC分类号： H01G11/36 , H01G11/24 , H01G11/26 , Y02E60/13 , Y02T10/7022
摘要： The present invention provides a nanostructured double-sided super capacitor device dial comprises a substrate, a first metal catalyst layer disposed on top of the substrate, an electric conductive layer disposed and etched on top of the first metal catalyst layer to form a plurality of finger electrodes and contact pads, wherein the plurality of the finger electrodes are configured to be interdigitated, a second metal catalyst layer disposed on the top of the finger electrodes; wherein, when the second metal catalyst layer is disposed, the substrate is etched to expose the first metal catalyst layer underneath of the finger electrodes, so that the top and bottom surfaces of the finger electrodes are exposed, carbon nanotubes (CNTs) extending from the exposed first and second metal catalyst layers of the finger electrodes, electrolyte filled into the finger electrodes and CNTs, and an encapsulating bottom and top encapsulating the interdigitated finger electrodes, CNTs and electrolyte to produce the nanostructured double-sided super capacitor device. The present invention also provides a process of fabricating the nano structured double sided super capacitor.
摘要翻译：本发明提供一种纳米结构的双面超级电容器装置拨盘，包括基板，设置在基板顶部的第一金属催化剂层，设置并蚀刻在第一金属催化剂层的顶部上以形成多个手指的导电层电极和接触垫，其中所述多个指状电极被构造成交叉指向，设置在指状电极的顶部上的第二金属催化剂层; 其中，当设置所述第二金属催化剂层时，蚀刻所述基板以暴露所述指状电极下方的所述第一金属催化剂层，从而暴露所述指状电极的顶表面和底表面，从所述第二金属催化剂层延伸的碳纳米管手指电极暴露的第一和第二金属催化剂层，填充到指状电极和CNT中的电解质，以及封装交错指状电极的封装底部和顶部，CNT和电解质以产生纳米结构的双面超级电容器器件。本发明还提供一种制造纳米结构双面超级电容器的方法。

10. 发明申请

WO2012165939A1 MICROPUMP WITH INTEGRATED GAS SENSING SYSTEM AND METHOD THEREOF 审中-公开
标题翻译：具有集成气体感测系统的MICROPUMP及其方法
公开(公告)号：WO2012165939A1
公开(公告)日：2012-12-06
申请号：PCT/MY2012/000111
申请日：2012-05-23
申请人： MIMOS BERHAD , WAH, Lee Hing , SHENG, Daniel Bien Chia , OTHMAN, Masuri
发明人： WAH, Lee Hing , SHENG, Daniel Bien Chia , OTHMAN, Masuri
IPC分类号： G01N27/18 , G01N33/00 , G01N25/18 , B01L3/00
CPC分类号： G01N33/0004 , B01L3/50273 , F04B43/095 , F04B45/047 , G01N27/18
摘要： The present invention provides a micro-gas sensor comprises a micropump having an inlet and an outlet, wherein the micropump is operable to pump gas through a gas passage therein; and a sensor having a sensor element disposed along the gas passage, wherein the sensor element is suspended within the gas passage. A method of sensing gas is also provided herewith.
摘要翻译：本发明提供了一种微气体传感器，其包括具有入口和出口的微型泵，其中微型泵可操作以将气体泵送通过其中的气体通道; 以及传感器，其具有沿着所述气体通道设置的传感器元件，其中所述传感器元件悬置在所述气体通道内。本文还提供了一种感测气体的方法。

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