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1. 发明申请

WO2006009413A1 TOP-EMITTING LIGHT EMITTING DIODES AND METHOD OF MANUFACTURING THEREOF 审中-公开
标题翻译：最大发光二极管及其制造方法
公开(公告)号：WO2006009413A1
公开(公告)日：2006-01-26
申请号：PCT/KR2005/002388
申请日：2005-07-22
申请人： GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY , SEONG, Tae-Yeon , SONG, June-O , KIM, Kyoung-Kook , HONG, Woong-Ki
发明人： SEONG, Tae-Yeon , SONG, June-O , KIM, Kyoung-Kook , HONG, Woong-Ki
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current- voltage properties.
摘要翻译：本发明提供一种具有依次层叠的n型覆盖层，有源层和p型覆盖层的顶部发射氮化物系发光元件，其特征在于，具有形成在p型覆盖层上的界面改性层和透明导电薄膜层，由形成在界面改性层上的透明导电材料构成; 及其制备方法。根据本发明的顶部发光氮化物系发光器件及其制备方法，提供了与p型覆盖层的欧姆接触改善的优点，从而提高引线接合效率和产率在封装发光器件时，由于低比接触电阻和优异的电流 - 电压特性，能够提高器件的发光效率和使用寿命。

2. 发明申请

WO2010008209A3 SUPPORTING SUBSTRATE FOR PRODUCING A VERTICALLY STRUCTURED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND A VERTICALLY STRUCTURED SEMICONDUCTOR LIGHT-EMITTING ELEMENT EMPLOYING THE SAME 审中-公开
标题翻译：用于制造垂直结构化半导体发光元件的支撑衬底以及采用该结构化半导体发光元件的垂直结构化半导体发光元件
公开(公告)号：WO2010008209A3
公开(公告)日：2010-05-14
申请号：PCT/KR2009003905
申请日：2009-07-15
申请人： UNIV IND & ACAD COLLABORATION , SEONG TAE YEON
发明人： SEONG TAE YEON
IPC分类号： H01L33/02
CPC分类号： H01L33/0079 , H01L21/76254 , H01L33/007 , H01L33/40 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a supporting substrate for producing a vertically structured semiconductor light-emitting element, which minimizes damage to a laminar light-emitting-structure thin-film comprising a group III-V nitride-based semiconductor separated from a sapphire substrate during production of the semiconductor light-emitting element, and which can thereby improve the overall performance of the semiconductor light-emitting element. The present invention also relates to a vertically structured semiconductor light-emitting element employing this supporting substrate. The supporting substrate for producing a vertically structured semiconductor light-emitting element, according to the present invention, comprises: a selective supporting substrate comprising a substance having a thermal expansion coefficient which is no more than 5 ppm different from that of a sapphire substrate on which is overlaid a laminar light-emitting-structure thin-film comprising a group III-V nitride-based semiconductor; a sacrificial layer formed on the selective supporting substrate; a thick metal film formed on the sacrificial layer; and a bonding layer formed on the thick metal film and comprising a soldering or brazing alloy substance.
摘要翻译：本发明涉及一种用于制造垂直构造的半导体发光元件的支撑基板，其使得在生产过程中对包括从蓝宝石基板分离的III-V族氮化物基半导体的层状发光结构薄膜的损伤最小化并能够改善半导体发光元件的整体性能。本发明还涉及采用该支撑基板的垂直构造的半导体发光元件。根据本发明的用于制造垂直构造的半导体发光元件的支撑基板包括：选择性支撑基板，该选择性支撑基板包括热膨胀系数不大于5ppm的物质，其不同于蓝宝石基板的热膨胀系数覆盖包括III-V族氮化物基半导体的层状发光结构薄膜; 在选择性支撑基板上形成的牺牲层; 在牺牲层上形成的厚金属膜; 以及形成在厚金属膜上并包括焊接或钎焊合金物质的结合层。

3. 发明申请

WO2007069871A1 OPTICAL DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：光学装置及其制造方法
公开(公告)号：WO2007069871A1
公开(公告)日：2007-06-21
申请号：PCT/KR2006/005505
申请日：2006-12-15
申请人： SAMSUNG ELECTRONICS CO., LTD. , SEONG, Tae-Yeon
发明人： SEONG, Tae-Yeon
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01B1/08 , H01L31/022466 , H01L33/32
摘要： Disclosed is an optical device including an optical member and a contact layer stacked on at least one of top and bottom surfaces of the optical member. The contact layer has at least one transparent conducting oxynitride (TCON) layer. The TCON consists of at least one of indium (In), tin (Sn), zinc (Zn), cadmium (Cd), gallium (Ga), aluminum (Al), magnesium (Mg), titanium (Ti), molybdenum (Mo), nickel (Ni), copper (Cu), silver (Ag), gold (Au), platinum (Pt), rhodium (Rh), iridium (Ir), ruthenium (Ru), and palladium (Pd).
摘要翻译：公开了一种光学装置，其包括光学构件和层叠在光学构件的顶表面和底表面中的至少一个上的接触层。接触层具有至少一个透明导电氮氧化物（TCON）层。 TCON由铟（In），锡（Sn），锌（Zn），镉（Cd），镓（Ga），铝（Al），镁（Mg），钛（Ti） Mo），镍（Ni），铜（Cu），银（Ag），金（Au），铂（Pt），铑（Rh），铱（Ir），钌（Ru）和钯（Pd）。

4. 发明申请

WO2007049939A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2007049939A1
公开(公告)日：2007-05-03
申请号：PCT/KR2006/004425
申请日：2006-10-27
申请人： KOREA UNIVERSITY INDUSTRIAL AND ACADEMIC COLLABORATION FOUNDATION , SAMSUNG ELECTRONICS CO., LTD. , SEONG, Tae-Yeon
发明人： SEONG, Tae-Yeon
IPC分类号： H01L33/00 , H01S5/30
CPC分类号： H01L33/04 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/405
摘要： Disclosed is a semiconductor device. The semiconductor device includes a first type nitride-based cladding layer formed on a growth substrate having an insulating property, a multi quantum well nitride-based active layer formed on the first type nitride-based cladding layer and a second type nitride-based cladding layer, which is different from the first type nitride-based cladding layer and is formed on the multi quantum well nitride-based active layer. A tunnel junction layer is formed between the undoped buffering nitride-based layer and the first type nitride -based cladding layer or/and formed on the second type nitride-based cladding layer.
摘要翻译：公开了一种半导体器件。半导体器件包括形成在具有绝缘性的生长衬底上的第一氮化物基覆层，形成在第一氮化物基覆层上的多量子阱氮化物基有源层和第二氮化物基覆层，其与第一氮化物类包覆层不同，并且形成在多量子阱氮化物基活性层上。在未掺杂的缓冲氮化物基层和第一氮化物类覆层之间形成隧道结层，或/形成在第二氮化物基覆层上。

5. 发明申请

WO2011065723A3 VERTICAL-STRUCTURE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR 审中-公开
标题翻译：垂直结构半导体发光元件及其制造方法
公开(公告)号：WO2011065723A3
公开(公告)日：2011-09-29
申请号：PCT/KR2010008281
申请日：2010-11-23
申请人： UNIV KOREA RES & BUS FOUND , SEONG TAE YEON
发明人： SEONG TAE YEON
IPC分类号： H01L33/30 , H01L33/02
CPC分类号： H01L33/647 , H01L33/0079
摘要： The present invention relates to a vertical-structure semiconductor light emitting element and to a production method therefor, and more specifically relates to a vertical-structure semiconductor light emitting element having a high-performance heatsink support comprising a thick metal film or metal foil. The vertical-structure semiconductor light emitting element produced in accordance with the present invention constitutes a highly reliable light emitting element with absolutely no thermal or mechanical damage since it has the high-performance heatsink support and so suffers no fine microcracking and can be freely subjected to heat treatment and to post-processing including of a side-surface passivation thin film.
摘要翻译：垂直结构半导体发光元件及其制造方法技术领域本发明涉及垂直结构半导体发光元件及其制造方法，更具体地涉及具有包括厚金属膜或金属箔的高性能散热支撑件的垂直结构半导体发光元件。根据本发明制造的垂直结构半导体发光元件由于具有高性能的散热器支撑并且因此不存在精细微裂纹并且可以自由地经受热处理和包括侧表面钝化薄膜的后处理。

6. 发明申请

WO2009148253A3 SUPPORTING SUBSTRATE FOR FABRICATION OF SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME 审中-公开
标题翻译：用于制造半导体发光器件的支撑衬底和使用其的半导体发光器件
公开(公告)号：WO2009148253A3
公开(公告)日：2010-03-18
申请号：PCT/KR2009002938
申请日：2009-06-02
申请人： UNIV IND & ACAD COLLABORATION , SEONG TAE YEON
发明人： SEONG TAE YEON
IPC分类号： H01L33/02 , H01L33/00 , H01L33/30 , H01L33/44 , H01L33/64
CPC分类号： H01L33/0075 , H01L33/005 , H01L33/0079 , H01L33/0095 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/64 , H01L33/641 , H01L33/642
摘要： The present invention is a supporting substrate for fabrication of a semiconductor light emitting device using a light emitting multilayer structure film and a method for fabricating a semiconductor light emitting device using the supporting substrate. The supporting substrate comprises a sacrificial layer, a heat sink layer and a bonding layer, which are sequentially laminated over a selected supporting substrate. The method for fabricating semiconductor light emitting devices, comprises: preparing a first wafer over a first growth substrate, the first wafer having a light emitting multilayer structure laminated/grown thereon; preparing a second wafer for use as a supporting substrate for fabrication of a semiconductor lighting emitting device; bonding the second wafer onto the first wafer; decoupling the first growth substrate of the first wafer from the resulting bonded object; forming a first ohmic contact electrode over the first wafer from which the first growth substrate has been decoupled and performing passivation; and cutting the passivated object to fabricate single chips.
摘要翻译：本发明是用于制造使用发光多层结构膜的半导体发光器件的支撑衬底和使用该支撑衬底的半导体发光器件的制造方法。支撑衬底包括牺牲层，散热层和接合层，其依次层压在选定的支撑衬底上。制造半导体发光器件的方法包括：在第一生长衬底上制备第一晶片，所述第一晶片具有在其上层压/生长的发光多层结构; 制备用作半导体发光器件的制造用支撑基板的第二晶片; 将所述第二晶片接合到所述第一晶片上; 将第一晶片的第一生长衬底与所得到的结合物体分离; 在所述第一晶片上形成第一欧姆接触电极，所述第一生长衬底从所述第一欧姆接触电极被去耦并进行钝化; 并切割被钝化的物体以制造单个芯片。

7. 发明申请

WO2006006822A1 FLIP-CHIP LIGHT EMITTING DIODES AND METHOD OF MANUFACTURING THEREOF 审中-公开
标题翻译：闪光二极管发光二极管及其制造方法
公开(公告)号：WO2006006822A1
公开(公告)日：2006-01-19
申请号：PCT/KR2005/002245
申请日：2005-07-12
申请人： GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY , SEONG, Tae-Yeon , SONG, June-O , KIM, Kyoung-Kook , HONG, Woong-Ki
发明人： SEONG, Tae-Yeon , SONG, June-O , KIM, Kyoung-Kook , HONG, Woong-Ki
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current- voltage properties.
摘要翻译：提供了一种倒装芯片氮化物基发光器件，其具有依次层叠在其上的n型覆盖层，有源层和p型覆盖层，包括形成在p型覆盖层上的反射层和至少一个透明导电薄膜层，其由能够抑制构成反射层的材料的扩散的透明导电材料构成，插入在p型覆盖层和反射层之间; 及其制备方法。根据本发明的倒装氮化物基发光器件及其制备方法，提供了与p型覆盖层的欧姆接触特性提高的优点，从而提高引线接合效率，在封装发光器件时产生的能量，由于低比接触电阻和优异的电流 - 电压特性，能够提高器件的发光效率和寿命。

8. 发明申请

WO2007049939A8 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2007049939A8
公开(公告)日：2008-10-16
申请号：PCT/KR2006004425
申请日：2006-10-27
申请人： SAMSUNG ELECTRONICS CO LTD , SEONG TAE-YEON
发明人： SEONG TAE-YEON
IPC分类号： H01L33/06 , H01L33/12 , H01L33/14 , H01L33/32 , H01L33/42 , H01S5/30
CPC分类号： H01L33/04 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/405
摘要： Disclosed is a semiconductor device. The semiconductor device includes a first type nitride-based cladding layer formed on a growth substrate having an insulating property, a multi quantum well nitride-based active layer formed on the first type nitride-based cladding layer and a second type nitride-based cladding layer, which is different from the first type nitride-based cladding layer and is formed on the multi quantum well nitride-based active layer. A tunnel junction layer is formed between the undoped buffering nitride-based layer and the first type nitride -based cladding layer or/and formed on the second type nitride-based cladding layer.
摘要翻译：公开了一种半导体器件。半导体器件包括形成在具有绝缘性的生长衬底上的第一氮化物基覆层，形成在第一氮化物基覆层上的多量子阱氮化物基有源层和第二氮化物基覆层，其与第一氮化物类包覆层不同，并且形成在多量子阱氮化物基活性层上。在未掺杂的缓冲氮化物基层和第一氮化物类覆层之间形成隧道结层，或/形成在第二氮化物基覆层上。

9. 发明申请

WO2007074969A1 GROUP-III NITRIDE-BASED LIGHT EMITTING DEVICE 审中-公开
标题翻译：基于III类氮化物的发光装置
公开(公告)号：WO2007074969A1
公开(公告)日：2007-07-05
申请号：PCT/KR2006/004426
申请日：2006-10-27
申请人： SAMSUNG ELECTRONICS CO., LTD. , SEONG, Tae-Yeon
发明人： SEONG, Tae-Yeon
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： Disclosed is a group-Ill nitride-based light emitting diode. The group-Ill nitride-based light emitting diode includes a substrate, an n-type nitride -based cladding layer formed on the substrate, a nitride -based active layer formed on the n-type nitride-based cladding layer, a p-type nitride -based cladding layer formed on the nitride-based active layer, and a p-type multi-layered ohmic contact layer formed on the p-type nitride -based cladding layer and including thermally decomposed nitride. The thermally decomposed nitride is obtained by combining nitrogen (N) with at least one metal component selected from the group consisting of nickel (Ni), copper (Cu), zinc (Zn), indium (In) and tin (Sn). An ohmic contact characteristic is enhanced at the interfacial surface of the p-type nitride-based cladding layer of the group-Ill nitride-based light emitting device, thereby improving the current- voltage characteristics. In addition, since the light transmittance of the transparent electrode is improved, light efficiency and brightness of the group-Ill nitride-based light emitting device are also improved.
摘要翻译：公开了一种III族氮化物基发光二极管。 III族氮化物系发光二极管包括基板，形成在基板上的n型氮化物基覆层，形成在n型氮化物基覆层上的基于氮化物的有源层，p型形成在氮化物基有源层上的氮化物基覆层，以及形成在p型氮化物基覆层上并包含热分解氮化物的p型多层欧姆接触层。通过将氮（N）与选自镍（Ni），铜（Cu），锌（Zn），铟（In）和锡（Sn）中的至少一种金属成分组合而获得的热分解氮化物。在基于III族氮化物的发光器件的p型氮化物基覆层的界面处增强了欧姆接触特性，从而提高了电流 - 电压特性。此外，由于透明电极的透光率提高，所以III族氮化物系发光器件的光效率和亮度也得到改善。

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