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1. 发明公开

EP2264793A4 LIGHT-EMITTING ELEMENT 有权转让
标题翻译： LICHTEMITTIERENDES元素
公开(公告)号：EP2264793A4
公开(公告)日：2015-03-18
申请号：EP09754967
申请日：2009-04-06
申请人： SONG JUNE O
发明人： SONG JUNE O
IPC分类号： H01L33/44 , H01L33/22 , H01L33/46
CPC分类号： H01L33/44 , H01L33/04 , H01L33/12 , H01L33/22 , H01L33/46 , H01L33/58 , H01L2933/0091
摘要： Disclosed is a light emitting device. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a passivation layer surrounding the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, a first light extracting structure layer having a concave-convex structure on the passivation layer, a first electrode layer electrically connected to the first conductive semiconductor layer through the passivation layer and the first light extracting structure layer, and a second electrode layer electrically connected to the second conductive semiconductor layer through the passivation layer and the light extracting structure layer.
摘要翻译：公开了一种发光器件。发光器件包括第一导电半导体层，第一导电半导体层上的有源层，有源层上的第二导电半导体层，围绕第一导电半导体层的钝化层，有源层和第二导电半导体层层，在钝化层上具有凹凸结构的第一光提取结构层，通过钝化层和第一光提取结构层与第一导电半导体层电连接的第一电极层和电连接的第二电极层通过钝化层和光提取结构层到达第二导电半导体层。

2. 发明公开

EP2264792A2 LIGHT EMITTING DEVICE AND A FABRICATION METHOD THEREOF 有权转让
标题翻译：发光器件及其制造方法
公开(公告)号：EP2264792A2
公开(公告)日：2010-12-22
申请号：EP09754966.1
申请日：2009-04-06
申请人： Song, June O.
发明人： Song, June O.
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/387 , H01L33/40 , H01L33/46 , H01L2933/0091
摘要： A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a first passivation layer surrounding the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer; a second connection layer electrically connected to the second conductive semiconductor layer through the first passivation layer; a first light extracting structure layer on the first passivation layer and the second connection layer; a first electrode layer electrically connected to the first conductive semiconductor layer; and a second electrode layer on the first light extracting structure layer.

3. 发明公开

EP2259346A2 LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR 有权转让
标题翻译：发光元件及其制造方法
公开(公告)号：EP2259346A2
公开(公告)日：2010-12-08
申请号：EP09725283.7
申请日：2009-03-27
申请人： Song, June O.
发明人： Song, June O.
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/0079
摘要： A light emitting element according to an exemplary embodiment includes: a support substrate; a second electrode layer formed on the support substrate; a current spreading layer formed on the support substrate; a second conductive semiconductor layer formed on the second electrode layer and the current spreading layer; an active layer formed on the second conductive semiconductor layer; a first conductive semiconductor layer formed on the active layer; and a first electrode layer formed on the first conductive semiconductor layer.

4. 发明授权

EP2264793B1 LIGHT EMITTING DIODE 有权转让
标题翻译：发光二极管
公开(公告)号：EP2264793B1
公开(公告)日：2017-08-16
申请号：EP09754967.9
申请日：2009-04-06
申请人： Song, June O.
发明人： Song, June O.
IPC分类号： H01L33/44 , H01L33/46 , H01L33/22
CPC分类号： H01L33/44 , H01L33/04 , H01L33/12 , H01L33/22 , H01L33/46 , H01L33/58 , H01L2933/0091
摘要： Disclosed is a light emitting device. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a passivation layer surrounding the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, a first light extracting structure layer having a concave-convex structure on the passivation layer, a first electrode layer electrically connected to the first conductive semiconductor layer through the passivation layer and the first light extracting structure layer, and a second electrode layer electrically connected to the second conductive semiconductor layer through the passivation layer and the light extracting structure layer.
摘要翻译：公开了一种发光装置。该发光器件包括：第一导电半导体层，在第一导电半导体层上的有源层，在有源层上的第二导电半导体层，围绕第一导电半导体层，有源层和第二导电半导体的钝化层在钝化层上具有凹凸结构的第一光提取结构层，通过钝化层和第一光提取结构层电连接到第一导电半导体层的第一电极层以及电连接到第一电极层的第二电极层，通过钝化层和光提取结构层到达第二导电半导体层。

5. 发明公开

EP2262011A2 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR SAME 有权转让
标题翻译：发光装置及其制造方法
公开(公告)号：EP2262011A2
公开(公告)日：2010-12-15
申请号：EP09754930.7
申请日：2009-04-01
申请人： Song, June O.
发明人： Song, June O.
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/0095 , H01L33/08 , H01L33/145 , H01L33/387 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a reflective ohmic contact layer on the support substrate, a functional complex layer including a process assisting region and ohmic contact regions divided by the process assisting region on the reflective ohmic contact layer, and a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on each ohmic contact region.
摘要翻译：公开了一种发光器件及其制造方法。该发光器件包括支撑衬底，在支撑衬底上的反射欧姆接触层，包括工艺辅助区域的功能复合层以及在反射欧姆接触层上由工艺辅助区域分割的欧姆接触区域，以及发光半导体在每个欧姆接触区上包括第二导电半导体层，有源层和第一导电半导体层。

6. 发明公开

EP2259344A2 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR SAME 有权转让
标题翻译：发光装置及其制造方法
公开(公告)号：EP2259344A2
公开(公告)日：2010-12-08
申请号：EP09724259.8
申请日：2009-03-24
申请人： Song, June O.
发明人： Song, June O.
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/14 , H01L33/38 , H01L33/44 , H01L2933/0016 , H01L2933/0091
摘要： A light emitting device according to the embodiment includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a current spreading layer on the second conductive semiconductor layer, a bonding layer on the current spreading layer, and a light extracting structure on the bonding layer.
摘要翻译：根据实施例的发光器件包括：第一导电半导体层，在第一导电半导体层上的有源层，在有源层上的第二导电半导体层，在第二导电半导体层上的电流扩展层，电流扩散层以及接合层上的光提取结构。

7. 发明公开

EP2262012A4 LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR 有权转让
标题翻译： HECTELLUNGSVERFAHRENDAFÜR的LICHTEMITTIERENDES ELEMENT
公开(公告)号：EP2262012A4
公开(公告)日：2014-12-31
申请号：EP09754948
申请日：2009-04-02
申请人： SONG JUNE O
发明人： SONG JUNE O
IPC分类号： H01L33/00 , H01L33/40 , H01L33/44
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/44
摘要： A light emitting device according to the embodiment includes a support substrate; a reflective layer over the support substrate; an ohmic contact layer over the reflective layer; a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer over the ohmic contact layer; a first passivation layer surrounding a lateral side of the light emitting semiconductor layer; and a second passivation layer surrounding lateral sides of the first passivation layer and the reflective layer.
摘要翻译：根据实施例的发光器件包括支撑衬底; 在支撑衬底上的反射层; 反射层上的欧姆接触层; 包括在所述欧姆接触层上的第二导电半导体层，有源层和第一导电半导体层的发光半导体层; 围绕所述发光半导体层的侧面的第一钝化层; 以及围绕所述第一钝化层和所述反射层的横向侧面的第二钝化层。

8. 发明公开

EP2262012A2 LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR 有权转让
标题翻译： LEUCHTDIODE UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2262012A2
公开(公告)日：2010-12-15
申请号：EP09754948.9
申请日：2009-04-02
申请人： Song, June O.
发明人： Song, June O.
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/44
摘要： A light emitting device according to the embodiment includes a support substrate; a reflective layer over the support substrate; an ohmic contact layer over the reflective layer; a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer over the ohmic contact layer; a first passivation layer surrounding a lateral side of the light emitting semiconductor layer; and a second passivation layer surrounding lateral sides of the first passivation layer and the reflective layer.
摘要翻译：根据实施例的发光器件包括支撑衬底; 在支撑衬底上的反射层; 反射层上的欧姆接触层; 包括在所述欧姆接触层上的第二导电半导体层，有源层和第一导电半导体层的发光半导体层; 围绕所述发光半导体层的侧面的第一钝化层; 以及围绕所述第一钝化层和所述反射层的横向侧面的第二钝化层。

9. 发明公开

EP2259346A4 LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR 有权转让
标题翻译：发光元件及其制造方法
公开(公告)号：EP2259346A4
公开(公告)日：2014-08-20
申请号：EP09725283
申请日：2009-03-27
申请人： SONG JUNE O
发明人： SONG JUNE O
IPC分类号： H01L33/14 , H01L33/00
CPC分类号： H01L33/14 , H01L33/0079
摘要： A light emitting element according to an exemplary embodiment includes: a support substrate; a second electrode layer formed on the support substrate; a current spreading layer formed on the support substrate; a second conductive semiconductor layer formed on the second electrode layer and the current spreading layer; an active layer formed on the second conductive semiconductor layer; a first conductive semiconductor layer formed on the active layer; and a first electrode layer formed on the first conductive semiconductor layer.
摘要翻译：根据示例性实施例的发光元件包括：支撑衬底; 形成在所述支撑基板上的第二电极层; 形成在所述支撑基板上的电流扩散层; 形成在所述第二电极层和所述电流扩展层上的第二导电半导体层; 形成在所述第二导电半导体层上的有源层; 形成在所述有源层上的第一导电半导体层; 以及形成在所述第一导电半导体层上的第一电极层。

10. 发明公开

EP2262011A4 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR SAME 有权转让
标题翻译： VERFAHREN ZU IHRER HERSTELLUNG LICHTEMITTIERENDE VORRICHTUNG
公开(公告)号：EP2262011A4
公开(公告)日：2014-01-22
申请号：EP09754930
申请日：2009-04-01
申请人： SONG JUNE O
发明人： SONG JUNE O
IPC分类号： H01L33/00 , H01L33/08 , H01L33/38
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/0095 , H01L33/08 , H01L33/145 , H01L33/387 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a reflective ohmic contact layer on the support substrate, a functional complex layer including a process assisting region and ohmic contact regions divided by the process assisting region on the reflective ohmic contact layer, and a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on each ohmic contact region.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括支撑衬底，支撑衬底上的反射欧姆接触层，包括由反射欧姆接触层上的工艺辅助区域划分的工艺辅助区域和欧姆接触区域的功能复合层，以及发光半导体层，包括在每个欧姆接触区域上的第二导电半导体层，有源层和第一导电半导体层。

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