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2. 发明授权

US5851283A Method and apparatus for production of single crystal 失效
标题翻译：用于生产单晶的方法和装置
公开(公告)号：US5851283A
公开(公告)日：1998-12-22
申请号：US770499
申请日：1996-12-20
申请人： Ryouji Hoshi , Masashi Sonokawa , Izumi Fusegawa , Tomohiko Ohta
发明人： Ryouji Hoshi , Masashi Sonokawa , Izumi Fusegawa , Tomohiko Ohta
IPC分类号： C30B15/00 , C30B15/30 , C30B29/06 , C30B33/04 , C30B15/22
CPC分类号： C30B29/06 , C30B15/305 , Y10S117/917
摘要： A single crystal production apparatus based on an HMCZ method for production a large-diametered single crystal having a uniform microscopic oxygen concentration distribution in its crystal growth direction to thereby provide a wafer having a high in-plane uniformity of oxygen concentration distribution. In the single crystal production apparatus based on the HMCZ method, when B denotes a vertical position of the bottom surface of a melt within a crucible and L denotes the depth of the melt at the time of starting crystal pulling operation, a vertical position of the coil central axis Cc of superconducting electromagnets 12 and 15 is controlled to be a proper value included in a range from a position below the position B by {(1/3).times.L} to a position above the position B by {(1/3).times.L} to pull the single crystal. Thereby the intensity of a magnetic field applied to the melt in the vicinity of the interface of the crystal growth within the crucible is weakened to increase the degree of freedom of the convection of the melt, while the intensity of the magnetic field applied to the melt in the vicinity of the bottom part of the crucible is strengthened to suppress the convection.
摘要翻译：一种基于HMCZ方法制造在其晶体生长方向上具有均匀的微观氧浓度分布的大直径单晶的单晶制造装置，从而提供具有高的氧浓度分布的面内均匀性的晶片。在基于HMCZ法的单晶制造装置中，当B表示坩埚内的熔体的底面的垂直位置，L表示开始晶体拉拔操作时熔体的深度，垂直位置将超导电磁体12和15的线圈中心轴Cc控制在从位置B以下位置{（+ E，fra 1/3 + EE）xL}到位置B以上的位置的范围内的适当值通过{（+ E，fra 1/3 + EE）xL}拉动单晶。因此，施加到坩埚内的晶体生长界面附近的熔体的磁场的强度被削弱，以增加熔体对流的自由度，同时施加到熔体的磁场的强度在坩埚底部附近被加强以抑制对流。

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