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1. 发明授权

US5314866A Formation of superconducting Bi-Sr-Ca-Cu-O films by organometallic chemical vapor deposition 失效
标题翻译：通过有机金属化学气相沉积形成超导Bi-Sr-Ca-Cu-O薄膜
公开(公告)号：US5314866A
公开(公告)日：1994-05-24
申请号：US352325
申请日：1989-05-16
申请人： Alan D. Berry , David K. Gaskill , Ronald T. Holm , Edward J. Cukauskas , Raphael Kaplan , Richard L. Henry
发明人： Alan D. Berry , David K. Gaskill , Ronald T. Holm , Edward J. Cukauskas , Raphael Kaplan , Richard L. Henry
IPC分类号： C23C16/40 , C23C16/56 , H01L39/24 , C23C16/00 , B05D5/12
CPC分类号： H01L39/2441 , C23C16/408 , C23C16/56 , Y10S505/73 , Y10S505/734 , Y10S505/742
摘要： A CVD process for forming a layer or layers of superconducting materials on a semiconductor substrate in which volatile organometallic compounds of bismuth, strontium, calcium and copper are heated in the presence of a carrier gas in a first chamber free of hydrolyzing agents. Under conditions free of hydrolyzing agents, the carrier gas transports a predetermined quantity of the volatile organometallic compounds of the bismuth, strontium, calcium and copper to a deposition chamber. The compounds are decomposed and deposit mixed oxides on the substrate. Subsequent to deposition of the mixed oxides of the desired elements the layer is sintered in an oxygen-rich atmosphere, and formed into a superconducting film by subsequent slow cooling still in an oxygen-rich atmosphere.
摘要翻译：在半导体衬底上形成一层或多层超导材料的CVD工艺，其中铋，锶，钙和铜的挥发性有机金属化合物在载体气体存在下在不含水解剂的第一室中加热。在不含水解剂的条件下，载气将预定数量的铋，锶，钙和铜的挥发性有机金属化合物输送到沉积室。化合物被分解并沉积在基材上的混合氧化物。在所需元素的混合氧化物沉积之后，将层在富氧气氛中烧结，然后在富氧气氛中继续缓慢冷却，形成超导膜。

2. 发明授权

US4372642A Multiple thin film absorption of reflected substrate modes in waveguide system 失效
标题翻译：波导系统反射衬底模式的多薄膜吸收
公开(公告)号：US4372642A
公开(公告)日：1983-02-08
申请号：US210188
申请日：1980-11-25
申请人： Arnold H. Singer , Ronald T. Holm
发明人： Arnold H. Singer , Ronald T. Holm
IPC分类号： G01R23/177 , G02F1/125 , G02B5/174
CPC分类号： G01R23/177 , G02F1/125
摘要： Reduction of light reflections in substrate modes. The use of absorbing multilayer thin-film light interference coatings on the backside of a LiNbO.sub.3 substrate provides an optical system which substantially reduces reflected substrate modes in integrated optical spectrum analyzers at around 8300 A wavelength, or at other selected wavelengths, over a broad range of incident angles by selection of individual film thickness and optical constants.
摘要翻译：减少衬底模式中的光反射。在LiNbO 3衬底的背面上使用吸收多层薄膜光干涉涂层提供了一种光学系统，其在大约8300A波长或其他选定波长的范围内，在广泛范围内大大减少了集成光谱分析仪中的反射衬底模式通过选择单个膜厚度和光学常数来确定入射角。

3. 发明授权

US07470989B2 Technique for perfecting the active regions of wide bandgap semiconductor nitride devices 有权
标题翻译：完善宽带隙半导体氮化物器件的有源区的技术
公开(公告)号：US07470989B2
公开(公告)日：2008-12-30
申请号：US11461904
申请日：2006-08-02
申请人： Richard L Henry , Martin C Peckerar , Daniel D Koleske , Alma E Wickenden , Charles R Eddy, Jr. , Ronald T Holm , Mark E Twigg
发明人： Richard L Henry , Martin C Peckerar , Daniel D Koleske , Alma E Wickenden , Charles R Eddy, Jr. , Ronald T Holm , Mark E Twigg
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/02378 , C30B25/04 , C30B29/40 , H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L29/2003
摘要： This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The device includes a substrate, a semiconductor active material deposited on said substrate, and electrical contacts. The semiconductor active material defines raised structures having atomically smooth surfaces. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.
摘要翻译：本发明涉及具有减小的扩展缺陷的电子/光电子器件及其制造方法。该器件包括衬底，沉积在所述衬底上的半导体活性材料和电触点。半导体活性材料限定具有原子光滑表面的凸起结构。该方法包括以下步骤：在半导体衬底表面上沉积电介质薄膜掩模材料; 图案化掩模材料以在其中形成延伸到基板表面的开口; 在开口处生长活性物质; 去除掩模材料以形成具有减小的延伸缺陷密度的装置; 以及将电触头放置在所述装置上。

4. 发明授权

US06174081B1 Specular reflection optical bandgap thermometry 失效
标题翻译：镜面反射光学带隙测温仪
公开(公告)号：US06174081B1
公开(公告)日：2001-01-16
申请号：US09016870
申请日：1998-01-30
申请人： Ronald T. Holm
发明人： Ronald T. Holm
IPC分类号： G01K1100
CPC分类号： G01K11/00 , G01K11/12
摘要： A new technique of optical bandgap thermometry allows one to accurately measure the temperature of semiconductor samples by using the temperature dependent reflective properties of the samples. The disclosed technique uses specular reflection at an oblique angle of incidence. Light from a light source such as quartz halogen lamp is chopped and focused by a lens. The light then is focused onto the sample at an oblique angle of incidence. The light is specularly reflected by the sample and is focused by a lens into a spectrometer. The spectrometer is used to determine the spectrum of the light reflected from the sample. The reflectance varies with temperature and the temperature of the sample is calculated as a function of the reflectance spectrum.
摘要翻译：光学带隙测温技术的新技术可以通过使用样品的温度依赖性反射特性来精确测量半导体样品的温度。所公开的技术使用倾斜入射角的镜面反射。来自诸如石英卤素灯的光源的光被透镜切碎并聚焦。然后将光以倾斜入射角聚焦在样品上。光被样品镜面反射，并被透镜聚焦到光谱仪中。光谱仪用于确定从样品反射的光的光谱。反射率随温度变化，样品的温度作为反射光谱的函数计算。

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