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    • 2. 发明授权
    • Thick, low-stress films, and coated substrates formed therefrom
    • 厚的低应力膜和由其形成的涂覆的基底
    • US5061574A
    • 1991-10-29
    • US443454
    • 1989-11-28
    • Charles H. Henager, Jr.Robert W. Knoll
    • Charles H. Henager, Jr.Robert W. Knoll
    • C23C14/06H01L21/48
    • C23C14/0676H01L21/481Y10T428/12528Y10T428/1259Y10T428/265
    • Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates.In general, the subject Si-Al-O-N films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500# C. or less.
    • 应力引起的变形以及由此产生的损伤随着膜厚而增加。 通过使用本发明的薄膜材料来克服过大的应力,允许形成对于上述某些应用所必需的厚膜。 除了作为光学膜的专门视图之外,主题薄膜材料的最有可能的用途是用于在硅衬底上的元件的微电子封装。 通常,本发明的Si-Al-O-N膜对下面的基底具有优异的粘附性,高硬度和耐久性,并且是优异的绝缘体。 现有技术的高温沉积工艺不能满足微电子封装温度形成的限制。 本发明的方法在非高温条件下进行,通常为500℃以下。