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1. 发明授权

US06277493B1 Joined ceramic product 失效
标题翻译：加入陶瓷制品
公开(公告)号：US06277493B1
公开(公告)日：2001-08-21
申请号：US09257343
申请日：1999-02-25
申请人： Charles H. Henager, Jr. , John L. Brimhall
发明人： Charles H. Henager, Jr. , John L. Brimhall
IPC分类号： B32B904
CPC分类号： C04B37/005 , C04B2237/08 , C04B2237/083 , C04B2237/36 , C04B2237/365 , C04B2237/38 , C04B2237/708
摘要： According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M2C, M4C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.
摘要翻译：根据本发明，接合产品是至少两个陶瓷部件，特别是在其间具有接合接头的双元件碳化物部件，其中，接合部具有金属硅相。双元素碳化物是指MC，M2C，M4C及其组合的化合物，其中M是第一元素，C是碳。金属硅相可以是金属碳化硅三元相或金属硅化物。

2. 发明授权

US07575815B2 Aluminide coatings 失效
标题翻译：铝涂层
公开(公告)号：US07575815B2
公开(公告)日：2009-08-18
申请号：US11338952
申请日：2006-01-24
申请人： Charles H. Henager, Jr. , Yongsoon Shin , William D. Samuels
发明人： Charles H. Henager, Jr. , Yongsoon Shin , William D. Samuels
IPC分类号： B32B15/20 , B32B15/01
CPC分类号： C23C18/122 , C23C10/34 , C23C10/48 , C23C10/52 , C23C18/1216 , Y10T428/12576 , Y10T428/12736 , Y10T428/12743 , Y10T428/12757
摘要： Disclosed herein are aluminide coatings. In one embodiment coatings are used as a barrier coating to protect a metal substrate, such as a steel or a superalloy, from various chemical environments, including oxidizing, reducing and/or sulfidizing conditions. In addition, the disclosed coatings can be used, for example, to prevent the substantial diffusion of various elements, such as chromium, at elevated service temperatures. Related methods for preparing protective coatings on metal substrates are also described.
摘要翻译：本文公开了铝化物涂层。在一个实施方案中，涂层用作阻挡涂层以保护金属基材，例如钢或超合金，从各种化学环境，包括氧化，还原和/或硫化条件。此外，所公开的涂层可以用于例如防止在升高的使用温度下各种元素例如铬的显着扩散。还描述了在金属基底上制备保护涂层的相关方法。

3. 发明授权

US5061574A Thick, low-stress films, and coated substrates formed therefrom 失效
标题翻译：厚的低应力膜和由其形成的涂覆的基底
公开(公告)号：US5061574A
公开(公告)日：1991-10-29
申请号：US443454
申请日：1989-11-28
申请人： Charles H. Henager, Jr. , Robert W. Knoll
发明人： Charles H. Henager, Jr. , Robert W. Knoll
IPC分类号： C23C14/06 , H01L21/48
CPC分类号： C23C14/0676 , H01L21/481 , Y10T428/12528 , Y10T428/1259 , Y10T428/265
摘要： Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates.In general, the subject Si-Al-O-N films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500# C. or less.
摘要翻译：应力引起的变形以及由此产生的损伤随着膜厚而增加。通过使用本发明的薄膜材料来克服过大的应力，允许形成对于上述某些应用所必需的厚膜。除了作为光学膜的专门视图之外，主题薄膜材料的最有可能的用途是用于在硅衬底上的元件的微电子封装。通常，本发明的Si-Al-O-N膜对下面的基底具有优异的粘附性，高硬度和耐久性，并且是优异的绝缘体。现有技术的高温沉积工艺不能满足微电子封装温度形成的限制。本发明的方法在非高温条件下进行，通常为500℃以下。

4. 发明授权

US4431499A Method of sputter etching a surface 失效
标题翻译：溅射蚀刻表面的方法
公开(公告)号：US4431499A
公开(公告)日：1984-02-14
申请号：US352738
申请日：1982-02-26
申请人： Charles H. Henager, Jr.
发明人： Charles H. Henager, Jr.
IPC分类号： C23F4/00 , F24J2/48 , H01J37/34 , C23C15/00
CPC分类号： C23F4/00 , F24J2/487 , H01J37/34 , Y02E10/40
摘要： The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.
摘要翻译：通过用与其相邻的种子材料共溅射蚀刻目标表面来对靶的表面进行纹理化，同时目标表面保持在预选温度。通过在溅射蚀刻的同时预选表面的温度，可以预先确定蚀刻表面的反射特性。表面可以被纹理化以有效地吸收阳光并且在红外区域具有最小的发射度，以便适合用作光热能转换的太阳能吸收器。

5. 发明授权

US6165301A Method of joining ceramics 失效
标题翻译：陶瓷接合方法
公开(公告)号：US6165301A
公开(公告)日：2000-12-26
申请号：US258008
申请日：1999-02-25
申请人： Charles H. Henager, Jr. , John L. Brimhall
发明人： Charles H. Henager, Jr. , John L. Brimhall
IPC分类号： C04B37/00 , B32B31/20
CPC分类号： C04B37/005 , C04B2237/08 , C04B2237/083 , C04B2237/36 , C04B2237/365 , C04B2237/38 , C04B2237/708
摘要： According to the method of the present invention, joining a first bi-element carbide to a second bi-element carbide, has the steps of: (a) forming a bond agent containing a metal carbide and silicon; (b) placing the bond agent between the first and second bi-element carbides to form a pre-assembly; and (c) pressing and heating the pre-assembly in a non-oxidizing atmosphere to a temperature effective to induce a displacement reaction creating a metal silicon phase bonding the first and second bi-element carbides.
摘要翻译：根据本发明的方法，将第一双元素碳化物与第二双元素碳化物接合具有以下步骤：（a）形成含有金属碳化物和硅的粘合剂; （b）将粘合剂放置在第一和第二双元件碳化物之间以形成预组件; 和（c）在非氧化性气氛中将预组件加压和加热到有效引起置换反应的温度，产生结合第一和第二双元件碳化物的金属硅相。

6. 发明授权

US5462902A Process for producing dispersed particulate composite materials 失效
标题翻译：生产分散颗粒复合材料的方法
公开(公告)号：US5462902A
公开(公告)日：1995-10-31
申请号：US150453
申请日：1993-11-09
申请人： Charles H. Henager, Jr. , John P. Hirth
发明人： Charles H. Henager, Jr. , John P. Hirth
IPC分类号： C04B35/58 , C04B35/65 , C04B35/573
CPC分类号： C04B35/58092 , C04B35/645 , C04B35/652
摘要： This invention is directed to a process for forming noninterwoven dispersed particulate composite products. In one case a composite multi-layer film product comprises a substantially noninterwoven multi-layer film having a plurality of discrete layers. This noninterwoven film comprises at least one discrete layer of a first material and at least one discrete layer of a second material. In another case the first and second materials are blended together with each other. In either case, the first material comprises a metalloid and the second material a metal compound. At least one component of a first material in one discrete layer undergoes a solid state displacement reaction with at least one component of a second material thereby producing the requisite noninterwoven composite film product. Preferably, the first material comprises silicon, the second material comprises Mo.sub.2 C, the third material comprises SiC and the fourth material comprises MoSi.sub.2.
摘要翻译：本发明涉及一种形成非交织的分散颗粒复合产品的方法。在一种情况下，复合多层膜产品包括具有多个离散层的基本上非编织的多层膜。该非编织膜包括至少一个第一材料的离散层和至少一个第二材料的离散层。在另一种情况下，第一和第二材料彼此混合在一起。在任一情况下，第一材料包括准金属，第二材料包括金属化合物。在一个离散层中的第一材料的至少一个组分与第二材料的至少一种组分进行固态置换反应，从而产生必需的非相互缠绕的复合膜产品。优选地，第一材料包括硅，第二材料包括Mo 2 C，第三材料包括SiC，第四材料包括MoSi 2。

7. 发明授权

US08088502B2 Nanostructured thin film optical coatings 有权
标题翻译：纳米结构薄膜光学涂层
公开(公告)号：US08088502B2
公开(公告)日：2012-01-03
申请号：US11858249
申请日：2007-09-20
申请人： Peter M. Martin , Charles H. Henager, Jr. , Wendy D. Bennett , Ralph E. Williford
发明人： Peter M. Martin , Charles H. Henager, Jr. , Wendy D. Bennett , Ralph E. Williford
IPC分类号： B32B9/00
CPC分类号： C23C14/352 , G02B1/105 , G02B1/14 , Y10T428/265 , Y10T428/31678
摘要： A durable coating made up of superimposed microlayers of preselected materials, and a method of making and utilizing such a coating. In one embodiment of the invention, at least 200 microlayers of at least one transparent material, having a thickness of less than 50 nms are superimposed in a sequential manner so as to obtain a desired arrangement between the layers. This structure then forms a transparent coating that has strength characteristics that are substantially greater than the strength of a layer of the coating material alone.
摘要翻译：由预选材料的叠加微层组成的耐久涂层，以及制造和利用这种涂层的方法。在本发明的一个实施例中，至少一个具有小于50nms厚度的透明材料的至少200个微层以顺序的方式重叠，以便获得层之间所需的布置。然后，该结构形成透明涂层，该涂层的强度特性基本上大于单独涂层材料层的强度。

8. 发明申请

US20090317545A1 ALUMINIDE COATINGS 审中-公开
标题翻译：铝铝涂层
公开(公告)号：US20090317545A1
公开(公告)日：2009-12-24
申请号：US12500299
申请日：2009-07-09
申请人： Charles H. Henager, JR. , Yongsoon Shin , William D. Samuels
发明人： Charles H. Henager, JR. , Yongsoon Shin , William D. Samuels
IPC分类号： B05D3/02
CPC分类号： C23C18/122 , C23C10/34 , C23C10/48 , C23C10/52 , C23C18/1216 , Y10T428/12576 , Y10T428/12736 , Y10T428/12743 , Y10T428/12757
摘要： Disclosed herein are aluminide coatings. In one embodiment coatings are used as a barrier coating to protect a metal substrate, such as a steel or a superalloy, from various chemical environments, including oxidizing, reducing and/or sulfidizing conditions. In addition, the disclosed coatings can be used, for example, to prevent the substantial diffusion of various elements, such as chromium, at elevated service temperatures. Related methods for preparing protective coatings on metal substrates are also described.
摘要翻译：本文公开了铝化物涂层。在一个实施方案中，涂层用作阻挡涂层以保护金属基材，例如钢或超合金，从各种化学环境，包括氧化，还原和/或硫化条件。此外，所公开的涂层可以用于例如防止在升高的使用温度下各种元素例如铬的显着扩散。还描述了在金属基底上制备保护涂层的相关方法。

9. 发明授权

US5156909A Thick, low-stress films, and coated substrates formed therefrom, and methods for making same 失效
标题翻译：厚的低应力膜和由其形成的涂覆的基材及其制造方法
公开(公告)号：US5156909A
公开(公告)日：1992-10-20
申请号：US445794
申请日：1989-11-28
申请人： Charles H. Henager, Jr. , Robert W. Knoll
发明人： Charles H. Henager, Jr. , Robert W. Knoll
IPC分类号： C23C14/00 , C23C14/06 , C23C14/54 , H01L23/29
CPC分类号： C23C14/0641 , C23C14/0036 , C23C14/54 , H01L23/298 , H01L2924/0002 , Y10T428/263 , Y10T428/265
摘要： Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the Si-Al-N film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates.In general, the subject films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500.degree. C. or less.
摘要翻译：应力引起的变形以及由此产生的损伤随着膜厚而增加。通过使用本发明的Si-Al-N薄膜材料克服过大的应力，可以形成上述某些应用所必需的厚膜。除了作为光学膜的专门视图之外，主题薄膜材料的最有可能的用途是用于在硅衬底上的元件的微电子封装。通常，本发明的薄膜对下面的基材具有优异的粘附性，高硬度和耐久性，并且是优异的绝缘体。现有技术的高温沉积工艺不能满足微电子封装温度形成的限制。本发明的方法在非高温条件下进行，通常在500℃以下。

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