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    • 1. 发明授权
    • Arrangement and method for controlling a micromechanical element
    • 用于控制微机械元件的布置和方法
    • US07965547B2
    • 2011-06-21
    • US12576267
    • 2009-10-09
    • Robert Kazinczi
    • Robert Kazinczi
    • G11C11/50
    • H01H59/0009G11C23/00H01H2001/0042
    • The invention concerns an arrangement for controlling a non-volatile memory arrangement for a circuit comprising: a micromechanical element coupled to a substrate; the micromechanical element being responsive to deflection means arranged on the substrate to control the movement of the micromechanical element between one or more stable states. In addition, the invention concerns a method for controlling a non-volatile memory device arrangement comprising: applying one or more signals to a deflection means for moving a micromechanical element between one or more stable states. To enhance the efficacy of the invention there is further provided a shorting circuit for use in the non-volatile memory arrangement.
    • 本发明涉及一种用于控制用于电路的非易失性存储器装置的装置,包括:耦合到衬底的微机械元件; 所述微机械元件响应于设置在所述基板上的偏转装置,以控制所述微机械元件在一个或多个稳定状态之间的移动。 此外,本发明涉及一种用于控制非易失性存储器件装置的方法,包括:将一个或多个信号施加到用于在一个或多个稳定状态之间移动微机械元件的偏转装置。 为了提高本发明的功效,还提供了一种用于非易失性存储装置的短路电路。
    • 3. 发明申请
    • Arrangement and Method for Controlling a Micromechanical Element
    • 用于控制微机械元件的布置和方法
    • US20070223267A1
    • 2007-09-27
    • US11579239
    • 2005-05-20
    • Robert Kazinczi
    • Robert Kazinczi
    • G11C11/00
    • H01H59/0009G11C23/00H01H2001/0042
    • The invention concerns an arrangement for controlling a non-volatile memory arrangement for a circuit comprising: a micromechanical element coupled to a substrate; the micromechanical element being responsive to deflection means arranged on the substrate to control the movement of the micromechanical element between one or more stable states. In addition, the invention concerns a method for controlling a nonvolatile memory device arrangement comprising: applying one or more signals to a deflection means for moving a micromechanical element between one or more stable states. To enhance the efficacy of the invention there is further provided a shorting circuit for use in the non-volatile memory arrangement.
    • 本发明涉及一种用于控制用于电路的非易失性存储器装置的装置,包括:耦合到衬底的微机械元件; 所述微机械元件响应于设置在所述基板上的偏转装置,以控制所述微机械元件在一个或多个稳定状态之间的移动。 此外,本发明涉及一种用于控制非易失性存储器件装置的方法,包括:将一个或多个信号施加到用于在一个或多个稳定状态之间移动微机械元件的偏转装置。 为了提高本发明的功效,还提供了一种用于非易失性存储装置的短路电路。
    • 4. 发明申请
    • NON-VOLATILE MEMORY DEVICE
    • 非易失性存储器件
    • US20100038731A1
    • 2010-02-18
    • US12441254
    • 2006-11-02
    • Robertus P. Van KampenRobert Kazinczi
    • Robertus P. Van KampenRobert Kazinczi
    • H01L29/84H01L21/3205
    • H01H59/0009B81C1/0015B81C2201/014B81C2201/0176G11C23/00H01H51/12
    • A non-volatile memory device and method of manufacturing a non-volatile micro-electromechanical memory cell. The method comprises the first step of depositing a first layer of sacrificial material on a substrate by use of Atomic Layer Deposition The second step of the method is providing a cantilever (101) over at least a portion of the first layer of sacrificial material. The third step is depositing, by use of Atomic Layer Deposition, a second layer of sacrificial material over the first layer of sacrificial material and over a portion of the cantilever such that a portion of the cantilever is surrounded by sacrificial material. The fourth step is providing a further layer material (107) which covers at least a portion of the second layer of sacrificial material. Finally, the last step is etching away the sacrificial material surrounding the cantilever, thereby defining a cavity (102) in which the cantilever is suspended.
    • 一种非易失性存储器件和制造非易失性微机电存储单元的方法。 该方法包括通过使用原子层沉积在衬底上沉积第一层牺牲材料的第一步骤。该方法的第二步是在第一层牺牲材料的至少一部分上提供悬臂(101)。 第三步骤是通过使用原子层沉积在第一层牺牲材料上并在悬臂的一部分上沉积第二层牺牲材料,使得悬臂的一部分被牺牲材料包围。 第四步是提供覆盖牺牲材料的第二层的至少一部分的另外的层材料(107)。 最后,最后一步是蚀刻掉围绕悬臂的牺牲材料,由此限定悬臂悬挂在其中的空腔(102)。