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    • 2. 发明授权
    • High voltage shield
    • 高压屏蔽
    • US06492219B2
    • 2002-12-10
    • US09909757
    • 2001-07-23
    • David J. MilesRichard J. Goldman
    • David J. MilesRichard J. Goldman
    • H01L2120
    • H01L23/552H01L23/585H01L2924/0002H01L2924/3011H01L2924/00
    • An integrated circuit has a guard ring for shielding a first area 14 (eg. high voltage area) from a second area 15 (eg.low voltage). The guard ring comprises a conductive guard ring 6, (eg. metal), which is partially exposed through a passivation layer 13 in the integrated circuit 1. A semiconductor guard ring 8, (eg. silicon), is isolated from the first and second areas of semiconductor by at least two trench rings 16, one located on each side of the semiconductor guard ring 8. A plurality of conductive elements (comprising a metal connection plate 18 and via 19) connect the conductive guard ring 6 and the semiconductor guard ring 8 at spaced apart intervals. The conductive guard ring 6, semiconductor guard ring 8 and conductive elements are all connected to a ground source. If high energy particles move from the first area towards the second area, they are attracted to the exposed metal, and their charge is conducted to ground.
    • 集成电路具有用于屏蔽来自第二区域15的第一区域14(例如,高电压区域)的保护环(例如,低电压)。 保护环包括导电保护环6(例如金属),其通过集成电路1中的钝化层13部分暴露。半导体保护环8(例如硅)与第一和第二 通过至少两个沟槽环16的半导体区域,一个位于半导体保护环8的每一侧上。多个导电元件(包括金属连接板18和通孔19)将导电保护环6和半导体保护环 8间隔间隔。 导电保护环6,半导体保护环8和导电元件都连接到地源。 如果高能粒子从第一区域移动到第二区域,则它们被吸引到暴露的金属,并且它们的电荷被引导到地面。
    • 3. 发明授权
    • High voltage shield
    • 高压屏蔽
    • US06384463B1
    • 2002-05-07
    • US09379107
    • 1999-08-23
    • David J. MilesRichard J. Goldman
    • David J. MilesRichard J. Goldman
    • H01L2900
    • H01L23/552H01L23/585H01L2924/0002H01L2924/3011H01L2924/00
    • An integrated circuit has a guard ring for shielding a first area 14 (eg. high voltage area) from a second area 15 (eg. low voltage). The guard ring comprises a conductive guard ring 6, (eg. metal), which is partially exposed through a passivation layer 13 in the integrated circuit 1. A semiconductor guard ring 8, (eg. silicon), is isolated from the first and second areas of semiconductor by at least two trench rings 16, one located on each side of the semiconductor guard ring 8. A plurality of conductive elements (comprising a metal connection plate 18 and via 19) connect the conductive guard ring 6 and the semiconductor guard ring 8 at spaced apart intervals. The conductive guard ring 6, semiconductor guard ring 8 and conductive elements are all connected to a ground source. If high energy particles move from the first area towards the second area, they are attracted to the exposed metal, and their charge is conducted to ground.
    • 集成电路具有用于屏蔽来自第二区域15(例如,低电压)的第一区域14(例如,高电压区域)的保护环。 保护环包括导电保护环6(例如金属),其通过集成电路1中的钝化层13部分暴露。半导体保护环8(例如硅)与第一和第二 通过至少两个沟槽环16的半导体区域,一个位于半导体保护环8的每一侧上。多个导电元件(包括金属连接板18和通孔19)将导电保护环6和半导体保护环 8间隔间隔。 导电保护环6,半导体保护环8和导电元件都连接到地源。 如果高能粒子从第一区域移动到第二区域,则它们被吸引到暴露的金属,并且它们的电荷被引导到地面。