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    • 5. 发明申请
    • MEMS PROBE BASED MEMORY
    • 基于MEMS探针的存储器
    • WO2006071834A3
    • 2006-08-17
    • PCT/US2005046990
    • 2005-12-21
    • INTEL CORPLAI STEFANFAZIO ALBERTRAO VALLURIBROWN MIKEMURALI KRISNAMURTHY
    • LAI STEFANFAZIO ALBERTRAO VALLURIBROWN MIKEMURALI KRISNAMURTHY
    • G11B9/00
    • G11C23/00B82Y10/00G11B9/1436G11B9/149G11C13/0004
    • In accordance with one embodiment of the invention, a memory device may include a memory layer and a MEMS layer. The memory layer may include an integrated circuit with a multiplexer and optionally a memory controller and a storage medium disposed on the integrated circuit where the storage medium includes chalcogenide islands as storage elements. The MEMS layer may include a movable MEMS platform having probes to connect selected chalcogenide islands via positioning of the MEMS platform. A high voltage source disposed external to the memory layer and the MEMS layer may provide a high voltage to a stator electrode on the memory layer and to a rotor electrode on the MEMS platform to control movement of the MEMS platform with respect to the storage medium. The memory device may be utilized in portable electronic devices such as media players and cellular telephones to provide a nonvolatile storage of information.
    • 根据本发明的一个实施例,存储器件可以包括存储器层和MEMS层。 存储器层可以包括具有多路复用器和可选地存储器控制器的集成电路和布置在集成电路上的存储介质,其中存储介质包括作为存储元件的硫族化物岛。 MEMS层可以包括具有通过MEMS平台的定位连接选定的硫族化物岛的探针的可移动MEMS平台。 设置在存储器层和MEMS层外部的高电压源可以向存储器层上的定子电极和MEMS平台上的转子电极提供高电压,以控制MEMS平台相对于存储介质的移动。 存储装置可以用于诸如媒体播放器和蜂窝电话的便携式电子设备中,以提供信息的非易失性存储。
    • 6. 发明申请
    • MEMS PROBE BASED MEMORY
    • 基于MEMS探头的存储器
    • WO2006071834A2
    • 2006-07-06
    • PCT/US2005/046990
    • 2005-12-21
    • INTEL CORPORATIONLAI, StefanFAZIO, AlbertRAO, ValluriBROWN, MikeMURALI, Krisnamurthy
    • LAI, StefanFAZIO, AlbertRAO, ValluriBROWN, MikeMURALI, Krisnamurthy
    • G11B9/00
    • G11C23/00B82Y10/00G11B9/1436G11B9/149G11C13/0004
    • In accordance with one embodiment of the invention, a memory device may include a memory layer and a MEMS layer. The memory layer may include an integrated circuit with a multiplexer and optionally a memory controller and a storage medium disposed on the integrated circuit where the storage medium includes chalcogenide islands as storage elements. The MEMS layer may include a movable MEMS platform having probes to connect selected chalcogenide islands via positioning of the MEMS platform. A high voltage source disposed external to the memory layer and the MEMS layer may provide a high voltage to a stator electrode on the memory layer and to a rotor electrode on the MEMS platform to control movement of the MEMS platform with respect to the storage medium. The memory device may be utilized in portable electronic devices such as media players and cellular telephones to provide a nonvolatile storage of information.
    • 根据本发明的一个实施例,存储器件可以包括存储器层和MEMS层。 存储器层可以包括具有多路复用器的集成电路以及可选地存储器控制器和设置在集成电路上的存储介质,其中存储介质包括作为存储元件的硫族化物岛。 MEMS层可以包括具有探针的可移动MEMS平台,以通过MEMS平台的定位连接选定的硫族化物岛。 设置在存储层和MEMS层外部的高电压源可以向存储层上的定子电极和MEMS平台上的转子电极提供高电压,以控制MEMS平台相对于存储介质的移动。 存储器装置可用于诸如媒体播放器和蜂窝电话之类的便携式电子装置中以提供信息的非易失性存储。