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1. 发明授权

US07550236B2 Multi wavelength mask for multi layer printing on a process substrate 失效
标题翻译：用于在工艺衬底上进行多层印刷的多波长掩模
公开(公告)号：US07550236B2
公开(公告)日：2009-06-23
申请号：US10953322
申请日：2004-09-29
申请人： Duane B. Barber , Phong T Do , Douglas M. Horn
发明人： Duane B. Barber , Phong T Do , Douglas M. Horn
IPC分类号： G03F1/00 , G03F1/14
CPC分类号： G03F1/50
摘要： A mask for exposing a first layer and a second layer on a process substrate, where the first and second layers are two separate layers of an integrated circuit. The mask includes a mask substrate that is substantially completely transmissive to a first wavelength of light and a second wavelength of light. A layer of a first material is disposed on the mask substrate, where the first material is substantially opaque to the first wavelength of light. The layer of the first material is patterned for the first layer. A layer of a second material is disposed on the mask substrate, where the second material is substantially opaque to the second wavelength of light. The layer of the second material is patterned for the second layer, where the layer of the first material and the layer of the second material are aligned on the mask substrate for proper alignment of the first and second layers on the process substrate.
摘要翻译：用于在处理衬底上暴露第一层和第二层的掩模，其中第一层和第二层是集成电路的两个分开的层。掩模包括对第一波长的光和第二波长的光完全透射的掩模基板。第一材料层设置在掩模基板上，其中第一材料对于第一波长的光是基本上不透明的。第一材料的层被图案化为第一层。第二材料层设置在掩模基板上，其中第二材料对第二波长的光基本上是不透明的。第二材料的层被图案化为第二层，其中第一材料的层和第二材料的层在掩模衬底上对准，用于正确对准处理衬底上的第一和第二层。

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