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1. 发明授权

US4979003A Field effect transistor and process for the production of a field effect transistor 失效
标题翻译：场效应晶体管和制造场效应晶体管的工艺
公开(公告)号：US4979003A
公开(公告)日：1990-12-18
申请号：US437700
申请日：1989-11-16
申请人： Peter Wennekers
发明人： Peter Wennekers
IPC分类号： H01L29/812 , H01L21/28 , H01L21/285 , H01L21/338 , H01L29/43 , H01L29/45
CPC分类号： H01L29/66863 , H01L21/28575 , H01L29/452 , H01L2924/0002 , Y10S148/02
摘要： In a field effect transistor, nonalloyed ohmic source-drain contacts (7, 8) are made possible, as the channel layer (3) is coated with lanthanide-arsenide which serves as contact-mediating layer and is covered with a very thin, conducting, monocrystalline, epitactic gallium-arsenide layer (10) on which nickel (11) is vaporized, an alloying step being dispensed with.
摘要翻译：在场效应晶体管中，非合金欧姆源极 - 漏极触点（7,8）是可能的，因为沟道层（3）涂覆有用作接触介质层的镧系元素 - 砷化物，并被非常薄的导电，其中镍（11）蒸发的单晶，中心状砷化镓层（10），不需要合金化步骤。

2. 发明申请

US20110128080A1 VOLTAGE CONTROLLED OSCILLATOR (VCO) CIRCUIT WITH INTEGRATED COMPENSATION OF THERMALLY CAUSED FREQUENCY DRIFT 有权
标题翻译：电压控制振荡器（VCO）电路，具有综合补偿热引起的频率DRIFT
公开(公告)号：US20110128080A1
公开(公告)日：2011-06-02
申请号：US12997102
申请日：2008-06-26
申请人： Peter Wennekers , Hao Li , Yi Yin
发明人： Peter Wennekers , Hao Li , Yi Yin
IPC分类号： H03L7/00
CPC分类号： H03B5/04 , H03B5/1218 , H03B5/1231 , H03B5/1243 , H03B5/1293 , H03L1/023 , H03L7/099 , H03L7/18
摘要： A voltage controlled oscillator circuit comprises a VCO resonator circuit having a first plurality of varactors for varying a frequency of the VCO resonator circuit the VCO resonator circuit being symmetrical with respect to VCO circuit ground and providing a signal having a frequency, the frequency depending on a tuning voltage applied to the first plurality of varactors, and a second plurality of varactors for compensating a drift of the frequency depending on a compensation voltage, a temperature sensor circuit sensing an ambient temperature of the VCO resonator circuit and providing a temperature dependent signal, and a temperature compensation circuit providing the compensation voltage depending on the temperature dependent signal. Furthermore, a phase locked loop (PLL) circuit, an automotive radar device and a method for compensating a frequency drift of a VCO resonator circuit are presented.
摘要翻译：压控振荡器电路包括具有第一多个变容二极管的VCO谐振电路，所述变容二极管用于改变所述VCO谐振器电路的频率，所述VCO谐振器电路相对于VCO电路接地是对称的，并提供具有频率的信号，所述频率取决于施加到第一组多个变容二极管的调谐电压，以及第二组多个变容二极管，用于根据补偿电压补偿频率的漂移;感测VCO谐振电路的环境温度并提供与温度相关的信号的温度传感器电路;以及温度补偿电路，其根据温度依赖信号提供补偿电压。此外，提出了锁相环（PLL）电路，汽车雷达装置和用于补偿VCO谐振电路的频率漂移的方法。

3. 发明授权

US5079596A Schottky diode 失效
标题翻译：肖特基二极管
公开(公告)号：US5079596A
公开(公告)日：1992-01-07
申请号：US353643
申请日：1989-04-05
申请人： Robin Smith , Peter Wennekers
发明人： Robin Smith , Peter Wennekers
IPC分类号： H01L31/10 , H01L29/47 , H01L29/861 , H01L29/872
CPC分类号： H01L29/475 , H01L29/872 , H01L2924/0002
摘要： A schottky diode consists of a substrate from gallium/arsenide (5) on which epitaxially a monocrystalline gallium/arsenide layer (6) doped with silicium is applied. For creating the Schottky contact, a monocrystalline erbium/arsenide layer or ytterbium/arsenide layer (7) is epitaxially applied on this layer. Following as a covering layer is a highly doped gallium/arsenide layer (8).
摘要翻译： PCT No.PCT / DE88 / 00487 Sec。 371日期：1989年4月5日 102（e）日期1989年4月5日PCT提交1988年8月6日PCT公布。公开号WO89 / 02162 日期：1989年3月9日。肖特基二极管由镓/砷化物（5）的衬底组成，其上施加掺杂有硅的单晶镓/砷化物层（6）。为了产生肖特基接触，在该层外延地施加单晶铒/砷化物层或镱/砷化物层（7）。以下作为覆盖层是高掺杂的镓/砷化物层（8）。

4. 发明授权

US5804849A Compound semiconductor device and method of manufacture 失效
标题翻译：复合半导体器件及其制造方法
公开(公告)号：US5804849A
公开(公告)日：1998-09-08
申请号：US645378
申请日：1996-05-13
申请人： Peter Wennekers
发明人： Peter Wennekers
IPC分类号： H01L29/10 , H01L29/812 , H01L29/80 , H01L31/112
CPC分类号： H01L29/8124 , H01L29/1075
摘要： A MESFET structure (20) and a method that minimizes the effects of processing steps and device performance of the MESFET structure (20). The MESFET structure (20) has a gate (30) positioned over a channel region (28) and between a source region (36) and a drain region (34). The MESFET structure (20) further includes a hole injector region (32) formed near the channel region (28). The hole injector region (32) injects holes beneath the channel region (28) which decrease the ability of the trap sites to attract electrons generated by impact ionization. Thus, this supply of holes beneath the channel region (28) prevents the effects of IV-kink and hysteresis caused by electrons that are accumulated in the trap sites.
摘要翻译： MESFET结构（20）和使MESFET结构（20）的处理步骤和器件性能的影响最小化的方法。 MESFET结构（20）具有位于沟道区域（28）上方且位于源极区域（36）和漏极区域（34）之间的栅极（30）。 MESFET结构（20）还包括在通道区域（28）附近形成的空穴注入器区域（32）。空穴注入器区域（32）在通道区域（28）下方注入空穴，这降低了捕获位点吸引由电离产生的电子的能力。因此，通道区域（28）下方的这种空穴供应可以防止蓄积在陷阱位置的电子产生的IV-扭结和滞后的影响。

5. 发明授权

US5739561A Light sensitive semiconductor device and method of operation 失效
标题翻译：光敏半导体器件及其操作方法
公开(公告)号：US5739561A
公开(公告)日：1998-04-14
申请号：US640222
申请日：1996-04-30
申请人： Peter Wennekers
发明人： Peter Wennekers
IPC分类号： H01L31/0352 , H01L31/112 , H01L29/80
CPC分类号： B82Y20/00 , H01L31/035236 , H01L31/1123
摘要： A light sensitive semiconductor device (10) is formed in a well region (12) in a semiconductor substrate (11). A first voltage (30) is applied to a source region (4) of the semiconductor device (10) and to a contact region (13) to the well region (12) to attract holes. A second voltage (31) is applied to the source region (14) and a drain region (16) to provide a current flow. As photons (23) from a light source are absorbed by semiconductor device (10), the source to drain current is decreased.
摘要翻译：在半导体衬底（11）中的阱区（12）中形成光敏半导体器件（10）。将第一电压（30）施加到半导体器件（10）的源极区域（4）和到阱区域（12）的接触区域（13）以吸引孔。第二电压（31）施加到源极区域（14）和漏极区域（16）以提供电流。当来自光源的光子（23）被半导体器件（10）吸收时，源极到漏极电流减小。

6. 发明申请

US20060228872A1 Method of making a semiconductor device having an arched structure strained semiconductor layer 审中-公开
标题翻译：制造具有拱形结构应变半导体层的半导体器件的方法
公开(公告)号：US20060228872A1
公开(公告)日：2006-10-12
申请号：US11093645
申请日：2005-03-30
申请人： Bich-Yen Nguyen , Shawn Thomas , Lubomir Cergel , Mariam Sadaka , Voon-Yew Thean , Peter Wennekers , Ted White , Andreas Wild , Detlev Gruetzmacher , Oliver Schmidt
发明人： Bich-Yen Nguyen , Shawn Thomas , Lubomir Cergel , Mariam Sadaka , Voon-Yew Thean , Peter Wennekers , Ted White , Andreas Wild , Detlev Gruetzmacher , Oliver Schmidt
IPC分类号： H01L21/20
CPC分类号： H01L29/78696 , H01L29/42392 , H01L29/66772 , H01L29/7842 , H01L29/78648 , H01L29/78687
摘要： A method of forming a semiconductor device includes forming a local strain-inducing structure of a first semiconductor material at a point location within a dielectric layer. The local strain-inducing structure has a prescribed geometry with a surface disposed above a surface of the dielectric layer. A second semiconductor material is formed over the dielectric layer and the local strain inducing structure, wherein formation of a first portion of the second material over the dielectric layer provides a poly crystalline structure of the second material and wherein formation of a second portion of the second material over the local strain-inducing structure provides a single crystalline structure of the second material subject to mechanical strain by the surface of the local strain-inducing structure. The single crystalline structure serves as a strained semiconductor layer of the semiconductor device.
摘要翻译：形成半导体器件的方法包括在电介质层内的点位置形成第一半导体材料的局部应变诱导结构。局部应变诱导结构具有规定的几何形状，其表面设置在电介质层的表面之上。第二半导体材料形成在电介质层和局部应变诱导结构之上，其中第二材料的第一部分在电介质层上的形成提供了第二材料的多晶结构，并且其中形成第二材料的第二部分局部应变诱导结构上的材料提供由局部应变诱导结构的表面经受机械应变的第二材料的单晶结构。单晶结构用作半导体器件的应变半导体层。

7. 发明申请

US20060226492A1 Semiconductor device featuring an arched structure strained semiconductor layer 审中-公开
标题翻译：具有拱形结构的半导体器件应变半导体层
公开(公告)号：US20060226492A1
公开(公告)日：2006-10-12
申请号：US11094008
申请日：2005-03-30
申请人： Bich-Yen Nguyen , Shawn Thomas , Lubomir Cergel , Mariam Sadaka , Voon-Yew Thean , Peter Wennekers , Ted White , Andreas Wild , Detlev Gruetzmacher , Oliver Schmidt
发明人： Bich-Yen Nguyen , Shawn Thomas , Lubomir Cergel , Mariam Sadaka , Voon-Yew Thean , Peter Wennekers , Ted White , Andreas Wild , Detlev Gruetzmacher , Oliver Schmidt
IPC分类号： H01L29/94
CPC分类号： H01L29/78696 , H01L29/0649 , H01L29/42392 , H01L29/66772 , H01L29/7842 , H01L29/78648 , H01L29/78687
摘要： A semiconductor device includes a mechanically strained channel, wherein the channel comprises of a single crystalline structure of a strained semiconductor layer having a non-linear geometry, the non-linear geometry including a portion of an arch shape. The semiconductor device further includes a dielectric layer, wherein a first portion of the channel is disposed overlying a point location within the dielectric layer and a second portion of the channel is disposed overlying a portion of the dielectric layer proximate to and outside of the point location. In addition, a gate is disposed proximate to the channel for controlling current flow through the channel between first and second current handling electrodes that are coupled to the channel.
摘要翻译：半导体器件包括机械应变通道，其中通道包括具有非线性几何形状的应变半导体层的单晶结构，非线性几何形状包括拱形部分。所述半导体器件还包括介电层，其中所述沟道的第一部分设置在所述电介质层内的点位置上方，并且所述沟道的第二部分设置在所述电介质层的靠近所述点位置和外部的位置。此外，栅极靠近通道设置，用于控制电流通过耦合到通道的第一和第二电流处理电极之间的通道。

8. 发明授权

US08289094B2 Voltage controlled oscillator (VCO) circuit with integrated compensation of thermally caused frequency drift 有权
标题翻译：压控振荡器（VCO）电路具有集成补偿的热引起的频率漂移
公开(公告)号：US08289094B2
公开(公告)日：2012-10-16
申请号：US12997102
申请日：2008-06-26
申请人： Peter Wennekers , Hao Li , Yi Yin
发明人： Peter Wennekers , Hao Li , Yi Yin
IPC分类号： H03B5/08
CPC分类号： H03B5/04 , H03B5/1218 , H03B5/1231 , H03B5/1243 , H03B5/1293 , H03L1/023 , H03L7/099 , H03L7/18
摘要： A voltage controlled oscillator circuit comprises a VCO resonator circuit having a first plurality of varactors for varying a frequency of the VCO resonator circuit, the VCO resonator circuit being symmetrical with respect to VCO circuit ground and providing a signal having a frequency, the frequency depending on a tuning voltage applied to the first plurality of varactors, and a second plurality of varactors for compensating a drift of the frequency depending on a compensation voltage, a temperature sensor circuit sensing an ambient temperature of the VCO resonator circuit and providing a temperature dependent signal, and a temperature compensation circuit providing the compensation voltage depending on the temperature dependent signal. Furthermore, a phase locked loop (PLL) circuit, an automotive radar device and a method for compensating a frequency drift of a VCO resonator circuit are presented.
摘要翻译：压控振荡器电路包括具有用于改变VCO谐振电路的频率的第一多个变容二极管的VCO谐振电路，VCO谐振电路相对于VCO电路接地对称，并提供具有频率的信号，频率取决于施加到第一多个变容二极管的调谐电压，以及用于补偿根据补偿电压的频率漂移的第二多个变容二极管，感测VCO谐振电路的环境温度并提供与温度相关的信号的温度传感器电路，以及温度补偿电路，其根据与温度相关的信号提供补偿电压。此外，提出了锁相环（PLL）电路，汽车雷达装置和用于补偿VCO谐振电路的频率漂移的方法。

9. 发明授权

US5037770A Process for the production of a field effect transistor using a lanthanum arsenide contact layer 失效
标题翻译：使用砷化镧接触层制造场效应晶体管的方法
公开(公告)号：US5037770A
公开(公告)日：1991-08-06
申请号：US586504
申请日：1990-09-21
申请人： Peter Wennekers
发明人： Peter Wennekers
IPC分类号： H01L29/812 , H01L21/28 , H01L21/285 , H01L21/338 , H01L29/43 , H01L29/45
CPC分类号： H01L29/66863 , H01L21/28575 , H01L29/452 , H01L2924/0002 , Y10S148/02
摘要： In a field effect transistor, nonalloyed ohmic source-drain contacts (7, 8) are made possible, as the channel layer (3) is coated with lanthanide-arsenide which serves as contact-mediating layer and is covered with a very thin, conducting, monocrystalline, epitactic gallium-arsenide layer (10) on which nickel (11) is vaporized, an alloying step being dispensed with.

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